SMM2348ES www.vishay.com Vishay Siliconix Medical N-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 30 RDS(on) () at VGS = 10 V 0.024 RDS(on) () at VGS = 4.5 V 0.032 ID (A) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 8 Configuration Single D TO-236 (SOT-23) G 1 S 2 APPLICATIONS • Medical 3 D G Top View SMM2348ES* S * Marking Code: MAxxx N-Channel MOSFET ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and Halogen-free SMM2348ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain IS Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa ID L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range V 8 4.8 2.5 IDM 32 IAS 15.5 EAS 12 PD UNIT 3 1 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 166 RthJF 50 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mountb °C/W Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). S13-1819-Rev. A, 12-Aug-13 Document Number: 62894 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMM2348ES www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = 250 μA 30 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = 30 V - - 1 - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 30 V, TJ = 125 °C VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150 On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 10 - - VGS = 10 V ID = 12 A - 0.020 0.024 VGS = 10 V ID = 12 A, TJ = 125 °C - - 0.036 VGS = 10 V ID = 12 A, TJ = 175 °C - - 0.042 VGS = 4.5 V ID = 8 A - 0.026 0.032 - 10 - Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VDS = 15 V, ID = 3 A V nA μA A S Dynamicb - 430 540 - 100 125 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 40 50 Total Gate Chargec Qg - 7.95 14.5 - 1.6 - - 1.3 - f = 1 MHz 8.65 17.3 27 - 7 15 VDD = 15 V, RL = 3.4 ID 4.4 A, VGEN = 10 V, Rg = 1 - 8 15 - 21 40 - 8 15 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = 10 V VDS = 15 V, f = 1 MHz VDS = 15 V, ID = 5.5 A td(on) tr td(off) tf pF nC ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 3.5 A, VGS = 0 V - - 32 A - 0.8 1.2 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1819-Rev. A, 12-Aug-13 Document Number: 62894 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMM2348ES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 25 VGS = 10 V thru 4 V 20 ID - Drain Current (A) ID - Drain Current (A) 25 20 VGS = 3 V 15 10 15 10 TC = 25 °C 5 5 VGS = 2 V TC = 125 °C TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 0 2.0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 30 4 24 gfs - Transconductance (S) ID - Drain Current (A) TC = - 55 °C 3 TC = 25 °C 2 1 TC = 125 °C TC = 25 °C 18 TC = 125 °C 12 6 TC = - 55 °C 0 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 5 1 Transfer Characteristics 5 6 25 30 Transconductance 0.0500 600 500 0.0400 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2 3 4 ID - Drain Current (A) VGS = 4.5 V 0.0300 0.0200 VGS = 10 V 400 300 200 Coss 0.0100 0.0000 0 100 Crss 0 5 10 15 20 ID - Drain Current (A) On-Resistance vs. Drain Current S13-1819-Rev. A, 12-Aug-13 25 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62894 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMM2348ES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 ID = 5.5 A VDS = 15 V 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 6 4 2 0 ID = 5.5 A 1.8 VGS = 10 V 1.6 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 0 2 4 6 8 10 - 50 - 25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Gate Charge 100 0.15 10 0.12 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 25 TJ - Junction Temperature (°C) TJ = 150 °C 1 0.1 TJ = 25 °C 0.09 0.06 TJ = 150 °C 0.03 0.01 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.40 40 VDS - Drain-to-Source Voltage (V) 0.20 VGS(th) - Variance (V) 2 0.00 -0.20 ID = 5 mA -0.40 ID = 250 μA -0.60 -0.80 -1.00 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S13-1819-Rev. A, 12-Aug-13 125 150 175 38 ID = 1 mA 36 34 32 30 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 62894 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMM2348ES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms Limited by RDS(on)* BVDSS Limited 0.1 TC = 25 °C Single Pulse 0.01 0.01 100 ms 1 s, 10 s, DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S13-1819-Rev. A, 12-Aug-13 Document Number: 62894 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMM2348ES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62894. S13-1819-Rev. A, 12-Aug-13 Document Number: 62894 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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