DF N1 01 0D -3 BAV99QA Dual series high-speed switching diodes 4 May 2016 Product data sheet 1. General description Dual series high-speed switching diodes, encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • • • • • • • • High switching speed: trr ≤ 4 ns Low leakage current Reverse voltage VR ≤ 90 V Low capacitance Cd ≤ 2 pF Ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Suitable for Automatic Optical Inspection (AOI) of solder joint 3. Applications • • • High-speed switching General-purpose switching Reverse poarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current Tamb = 25 °C; single diode loaded - - 290 mA VR reverse voltage Tj = 25 °C - - 90 V IR reverse current VR = 80 V; Tj = 25 °C - - 0.5 µA trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C - - 4 ns Per diode [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAV99QA NXP Semiconductors Dual series high-speed switching diodes 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 A1 anode (diode 1) 2 K2 cathode (diode 2) 3 K1, A2 cathode (diode1) and anode (diode2) 4 K1, A2 cathode (diode1) and anode (diode2) Graphic symbol 1 A1 4 K1, A2 3 K2 2 aaa-022858 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package BAV99QA Name Description Version DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm SOT1215 7. Marking Table 4. Marking codes Type number Marking code BAV99QA Z 100 MARKING CODE (EXAMPLE) READING DIRECTION YEAR DATE CODE PIN 1 INDICATION MARK VENDOR CODE READING EXAMPLE: MARK-FREE AREA A 110 aaa-020723 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description BAV99QA Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 12 BAV99QA NXP Semiconductors Dual series high-speed switching diodes 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 90 V IF forward current Tamb = 25 °C; single diode loaded [1] - 290 mA Tamb = 25 °C; double diode loaded [1] - 170 mA Per diode IFRM repetitive peak forward current tp ≤ 0.5 ms; δ ≤ 0.25 ; Tj = 25 °C - 700 mA IFSM non-repetitive peak forward current tp = 100 µs; Tj(init) = 25 °C; square wave - 4 A tp = 1 ms; Tj(init) = 25 °C; square wave - 1.5 A tp = 1 s; Tj(init) = 25 °C; square wave - 0.5 A [1] - 305 mW [2] - 470 mW Per device; one diode loaded Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm². aaa-022851 0.4 IF (A) (1) 0.3 0.2 (2) 0.1 0.0 0 25 50 75 100 125 150 175 Tamb (°C) (1) single diode loaded (2) double diode loaded Fig. 2. Forward current as a function of ambient temperature; derating curve BAV99QA Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 12 BAV99QA NXP Semiconductors Dual series high-speed switching diodes 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient thermal resistance from junction to solder point Rth(j-sp) [1] [2] [3] Conditions Min Typ Max Unit [1] - - 410 K/W [2] - - 265 K/W [3] - - 55 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm². Soldering point of cathode tab. aaa-021943 103 duty cycle = Zth(j-a) (K/W) 1 0.5 102 0.25 0.1 0.75 0.33 0.2 0.05 0.02 0.01 10 0 1 10-5 10-4 10-3 10-2 10-1 1 102 10 tp (s) 103 FR4 PCB, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-021944 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 102 10 tp (s) 103 FR4 PCB, mounting pad for cathode 1 cm² Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BAV99QA Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 12 BAV99QA NXP Semiconductors Dual series high-speed switching diodes 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit forward voltage IF = 1 mA; Tj = 25 °C - - 715 mV IF = 10 mA; Tj = 25 °C - - 855 mV IF = 50 mA; Tj = 25 °C - - 1 V IF = 150 mA; Tj = 25 °C - - 1.25 V VR = 25 V; Tj = 25 °C - - 30 nA VR = 80 V; Tj = 25 °C - - 0.5 µA VR = 25 V; Tj = 150 °C - - 30 µA VR = 80 V; Tj = 150 °C - - 150 µA Per diode VF IR reverse current Cd diode capacitance VR = 0 V; f = 1 MHz; Tamb = 25 °C - - 2 pF trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C - - 4 ns VFR forward recovery voltage IF = 10 mA; tr = 20 ns; Tamb = 25 °C - - 1.75 V aaa-021945 1 IR (A) IF (A) 10-1 aaa-020907 10-3 10-4 (1) 10-5 10-6 (1) (2) 10-2 (2) (3) 10-7 (3) (4) 10-8 (4) 10-3 10-9 (5) 10-10 10-4 0.0 0.5 1.0 1.5 VF (V) 10-11 2.0 (1) Tj = 150 °C (2) Tj = 85 °C (3) Tj = 25 °C (4) Tj = −40 °C 0 20 40 60 80 VR (V) 100 (1) Tj = 150 °C (2) Tj = 125 °C (3) Tj = 85 °C (4) Tj = 25 °C (5) Tj = −40 °C Fig. 5. Forward current as a function of forward voltage; typical values Fig. 6. Reverse current as a function of reverse voltage; typical values BAV99QA Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 12 BAV99QA NXP Semiconductors Dual series high-speed switching diodes aaa-020908 2.0 aaa-020909 10 Cd (pF) IFSM (A) 1.5 1.0 1 0.5 0.0 0 5 10 15 20 VR (V) 10-1 10-1 25 f = 1MHz; Tamb = 25 °C Fig. 7. Diode capacitance as a function of reverse voltage; typical values BAV99QA Product data sheet 1 102 10 tp (ms) 103 Based on square wave currents. Tamb = 25 °C Fig. 8. Non-repetitive forward current as a function of pulse duration; maximum values All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 12 BAV99QA NXP Semiconductors Dual series high-speed switching diodes 11. Test information tr D.U.T. t 10 % IF RS = 50 Ω tp + IF SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS mga881 (1) 90 % VR input signal output signal (1) IR = 1 mA Fig. 9. Reverse recovery time test circuit and waveforms I RS = 50 Ω 1 kΩ 450 Ω I V 90 % OSCILLOSCOPE D.U.T. VFR Ri = 50 Ω 10 % tr t tp t input signal output signal mga882 Fig. 10. Forward recovery voltage test circuit and waveforms Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 0.87 0.95 0.75 1 0.95 1.05 0.22 0.30 2 0.16 0.24 0.1 3 0.04 max 0.34 0.40 Dimensions in mm 0.17 0.25 0.245 0.325 1.05 1.15 0.195 0.275 13-03-05 Fig. 11. Package outline DFN1010D-3 (SOT1215) BAV99QA Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 12 BAV99QA NXP Semiconductors Dual series high-speed switching diodes 13. Soldering Footprint information for reflow soldering of DFN1010D-3 package SOT1215 1.2 0.45 (2x) 0.3 1.1 0.35 (2x) 0.4 0.25 (2x) 0.75 0.3 0.5 1.5 1.4 0.4 0.5 0.4 0.3 0.5 1.3 0.4 0.3 0.4 0.5 1.3 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1215_fr Fig. 12. Reflow soldering footprint for DFN1010D-3 (SOT1215) BAV99QA Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 12 BAV99QA NXP Semiconductors Dual series high-speed switching diodes 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BAV99QA v.1 20160504 Product data sheet - - BAV99QA Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 12 BAV99QA NXP Semiconductors Dual series high-speed switching diodes Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 15. Legal information Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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BAV99QA Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. 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All rights reserved 10 / 12 BAV99QA NXP Semiconductors Dual series high-speed switching diodes Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BAV99QA Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 12 BAV99QA NXP Semiconductors Dual series high-speed switching diodes 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Test information......................................................... 7 12. Package outline.......................................................... 7 13. Soldering..................................................................... 8 14. Revision history..........................................................9 15. Legal information..................................................... 10 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 4 May 2016 BAV99QA Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 12 / 12