DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D114 1PS181 High-speed double diode Product data sheet Supersedes data of April 1996 1996 Sep 03 NXP Semiconductors Product data sheet High-speed double diode 1PS181 FEATURES DESCRIPTION • Small plastic SMD package The 1PS181 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the small plastic SMD SC59 package. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 80 V • Repetitive peak reverse voltage: max. 85 V PINNING PIN DESCRIPTION 1 cathode (k1) 2 cathode (k2) 3 common anode • Repetitive peak forward current: max. 500 mA. 2 1 APPLICATIONS 2 • High-speed switching in e.g. surface mounted circuits. 1 3 3 Top view MAM082 Marking code: A3T. Fig.1 Simplified outline (SC59) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 80 V IF continuous forward current single diode loaded; see Fig.2; note 1 − 215 mA double diode loaded; see Fig.2; note 1 − 125 mA − 500 mA t = 1 μs − 4 A t=1s − 0.5 A IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge Ptot total power dissipation − 250 Tstg storage temperature Tamb = 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 03 2 mW NXP Semiconductors Product data sheet High-speed double diode 1PS181 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT IF = 1 mA 610 − mV IF = 10 mA 740 − mV IF = 50 mA − 1.0 V IF = 100 mA − 1.2 V Per diode VF IR forward voltage reverse current see Fig.3 see Fig.4 VR = 25 V − VR = 80 V − VR = 25 V; Tj = 150 °C − 30 μA VR = 80 V; Tj = 150 °C − 100 μA 30 0.5 nA μA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.5 − 2.0 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.6 − 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.7 − 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 03 3 VALUE UNIT 250 K/W 500 K/W NXP Semiconductors Product data sheet High-speed double diode 1PS181 GRAPHICAL DATA MBD033 300 MBG382 300 handbook, halfpage IF (mA) IF (mA) (1) 200 (2) (3) 200 single diode loaded double diode loaded 100 100 0 0 0 100 T amb ( oC) 200 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 MBG380 2 10halfpage handbook, 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 Forward current as a function of forward voltage. MBH191 2.5 Cd (pF) handbook, halfpage IR (μA) 2.0 10 1.5 (1) 1 (2) (3) 1.0 10 1 0.5 10 2 100 0 Tj (oC) 0 0 200 (1) VR = 80 V; maximum values. (2) VR = 80 V; typical values. (3) VR = 25 V; typical values. Fig.4 1996 Sep 03 5 10 15 20 VR (V) 25 f = 1 MHz; Tj = 25 °C. Reverse current as a function of junction temperature. Fig.5 4 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet High-speed double diode 1PS181 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.6 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R = 50 Ω S D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.7 Forward recovery voltage test circuit and waveforms. 1996 Sep 03 5 t tp output signal NXP Semiconductors Product data sheet High-speed double diode 1PS181 PACKAGE OUTLINE 1.65 1.25 0.50 0.35 0.2 M A 1.3 1.0 A 3 3.0 2.5 1.7 1.3 2 1 2.1 1.7 0.6 0.2 0.26 0.10 3.1 2.7 msa313 Dimensions in mm. Fig.8 SC59. 1996 Sep 03 0.100 0.013 6 NXP Semiconductors Product data sheet High-speed double diode 1PS181 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1996 Sep 03 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 1996 Sep 03