PHILIPS 1PS301

DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D187
1PS301
High-speed double diode
Product data sheet
Supersedes data of 1996 Oct 04
1999 May 06
NXP Semiconductors
Product data sheet
High-speed double diode
1PS301
FEATURES
DESCRIPTION
• Very small plastic SMD package
The 1PS301 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the very small rectangular plastic
SMD SC70-3 package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 80 V
• Repetitive peak reverse voltage:
max. 85 V
PINNING
• Repetitive peak forward current:
max. 500 mA.
2
PIN
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
common cathode
1
APPLICATIONS
2
• High-speed switching in e.g.
surface mounted circuits.
1
3
3
Top view
MAM084
Marking code: B3.
Fig.1 Simplified outline (SOT323; SC70-3) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse
voltage
−
85
V
VR
continuous reverse voltage
−
80
V
IF
continuous forward current
single diode loaded; note 1; see Fig.2
−
250
mA
double diode loaded; note 1; see Fig.2
−
160
mA
−
500
mA
t = 1 μs
−
4
A
t=1s
−
0.5
A
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward
current
square wave; Tj = 25 °C prior to surge
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
Tamb = 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 06
2
NXP Semiconductors
Product data sheet
High-speed double diode
1PS301
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
IR
forward voltage
see Fig.3
reverse current
IF = 1 mA
610
−
mV
IF = 10 mA
740
−
mV
IF = 50 mA
−
1.0
V
IF = 100 mA
−
1.2
V
VR = 25 V
−
30
nA
VR = 80 V
−
0.5
μA
VR = 25 V; Tj = 150 °C
−
30
μA
VR = 80 V; Tj = 150 °C
−
100
μA
see Fig.4
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.5
−
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.6
−
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.7
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 06
3
VALUE
UNIT
200
K/W
415
K/W
NXP Semiconductors
Product data sheet
High-speed double diode
1PS301
GRAPHICAL DATA
MBG444
300
MBG382
300
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
(1)
(2)
(3)
200
200
(2)
100
100
0
0
0
Tamb (oC)
100
200
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
1
Fig.3
Forward current as a function of forward
voltage.
MBG380
2
10halfpage
handbook,
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Maximum permissible continuous forward
current as a function of ambient
temperature.
MBG446
0.8
handbook, halfpage
Cd
(pF)
IR
(μA)
10
0.6
(1)
1
10
0
(2)
(3)
0.4
1
0.2
10 2
0
100
Tj (oC)
0
200
0
(1) VR = 80 V; maximum values.
(2) VR = 80 V; typical values.
(3) VR = 25 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.4
Fig.5
Reverse current as a function of junction
temperature.
1999 May 06
4
4
8
12
VR (V)
16
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
High-speed double diode
1PS301
handbook, full pagewidth
tr
tp
t
D.U.T.
IF
R = 50 Ω
S
V = VR
10%
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
IF x R S
(1)
90%
VR
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.6 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.7 Forward recovery voltage test circuit and waveforms.
1999 May 06
5
t
tp
output
signal
NXP Semiconductors
Product data sheet
High-speed double diode
1PS301
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 May 06
REFERENCES
IEC
JEDEC
EIAJ
SC-70
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
High-speed double diode
1PS301
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 May 06
7
NXP Semiconductors
Customer notification
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Printed in The Netherlands
115002/00/04/pp8
Date of release: 1999 May 06
Document order number: 9397 750 05897