DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D187 1PS301 High-speed double diode Product data sheet Supersedes data of 1996 Oct 04 1999 May 06 NXP Semiconductors Product data sheet High-speed double diode 1PS301 FEATURES DESCRIPTION • Very small plastic SMD package The 1PS301 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the very small rectangular plastic SMD SC70-3 package. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 80 V • Repetitive peak reverse voltage: max. 85 V PINNING • Repetitive peak forward current: max. 500 mA. 2 PIN DESCRIPTION 1 anode (a1) 2 anode (a2) 3 common cathode 1 APPLICATIONS 2 • High-speed switching in e.g. surface mounted circuits. 1 3 3 Top view MAM084 Marking code: B3. Fig.1 Simplified outline (SOT323; SC70-3) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 80 V IF continuous forward current single diode loaded; note 1; see Fig.2 − 250 mA double diode loaded; note 1; see Fig.2 − 160 mA − 500 mA t = 1 μs − 4 A t=1s − 0.5 A IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge Ptot total power dissipation − 300 mW Tstg storage temperature Tamb = 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 06 2 NXP Semiconductors Product data sheet High-speed double diode 1PS301 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF IR forward voltage see Fig.3 reverse current IF = 1 mA 610 − mV IF = 10 mA 740 − mV IF = 50 mA − 1.0 V IF = 100 mA − 1.2 V VR = 25 V − 30 nA VR = 80 V − 0.5 μA VR = 25 V; Tj = 150 °C − 30 μA VR = 80 V; Tj = 150 °C − 100 μA see Fig.4 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.5 − 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.6 − 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.7 − 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 06 3 VALUE UNIT 200 K/W 415 K/W NXP Semiconductors Product data sheet High-speed double diode 1PS301 GRAPHICAL DATA MBG444 300 MBG382 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) (1) (1) (2) (3) 200 200 (2) 100 100 0 0 0 Tamb (oC) 100 200 Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. Fig.2 1 Fig.3 Forward current as a function of forward voltage. MBG380 2 10halfpage handbook, 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Maximum permissible continuous forward current as a function of ambient temperature. MBG446 0.8 handbook, halfpage Cd (pF) IR (μA) 10 0.6 (1) 1 10 0 (2) (3) 0.4 1 0.2 10 2 0 100 Tj (oC) 0 200 0 (1) VR = 80 V; maximum values. (2) VR = 80 V; typical values. (3) VR = 25 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.4 Fig.5 Reverse current as a function of junction temperature. 1999 May 06 4 4 8 12 VR (V) 16 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet High-speed double diode 1PS301 handbook, full pagewidth tr tp t D.U.T. IF R = 50 Ω S V = VR 10% IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω IF x R S (1) 90% VR MGA881 input signal output signal (1) IR = 1 mA. Fig.6 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.7 Forward recovery voltage test circuit and waveforms. 1999 May 06 5 t tp output signal NXP Semiconductors Product data sheet High-speed double diode 1PS301 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 1999 May 06 REFERENCES IEC JEDEC EIAJ SC-70 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet High-speed double diode 1PS301 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 May 06 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/04/pp8 Date of release: 1999 May 06 Document order number: 9397 750 05897