PHILIPS 1PS226

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
1PS226
High-speed double diode
Product specification
Supersedes data of April 1996
1996 Sep 03
Philips Semiconductors
Product specification
High-speed double diode
1PS226
FEATURES
DESCRIPTION
• Small plastic SMD package
The 1PS226 consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the small plastic SMD SC59
package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 80 V
• Repetitive peak reverse voltage:
max. 85 V
PINNING
PIN
DESCRIPTION
1
anode
2
cathode
3
common connection
• Repetitive peak forward current:
max. 500 mA.
2
1
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
2
1
3
3
Top view
MAM083
Marking code: C3T.
Fig.1 Simplified outline (SC59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
−
85
V
VR
continuous reverse voltage
−
80
V
IF
continuous forward current
single diode loaded; see Fig.2;
note 1
−
215
mA
double diode loaded; see Fig.2;
note 1
−
125
mA
−
500
mA
t = 1 µs
−
4
A
t=1s
−
0.5
A
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
square wave; Tj = 25 °C prior to
surge
−
250
storage temperature
−65
+150
°C
junction temperature
−
150
°C
Ptot
total power dissipation
Tstg
Tj
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 03
2
mW
Philips Semiconductors
Product specification
High-speed double diode
1PS226
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
IF = 1 mA
610
−
mV
IF = 10 mA
740
−
mV
IF = 50 mA
−
1.0
V
IF = 100 mA
−
1.2
V
Per diode
VF
IR
forward voltage
reverse current
see Fig.3
see Fig.4
VR = 25 V
−
VR = 80 V
−
VR = 25 V; Tj = 150 °C
−
30
µA
100
µA
30
0.5
nA
µA
VR = 80 V; Tj = 150 °C
−
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.5
−
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.6
−
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.7
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 03
3
VALUE
UNIT
250
K/W
500
K/W
Philips Semiconductors
Product specification
High-speed double diode
1PS226
GRAPHICAL DATA
MBD033
300
MBG382
300
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
200
(2)
(3)
200
single diode loaded
double diode loaded
100
100
0
0
0
100
T amb ( oC)
200
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
MBG380
2
10halfpage
handbook,
2
VF (V)
Forward current as a function of forward
voltage.
MBG446
0.8
handbook, halfpage
Cd
(pF)
IR
(µA)
0.6
10
(1)
1
10
1
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
(2)
(3)
0.4
1
0.2
10 2
0
100
Tj (oC)
0
0
200
(1) VR = 80 V; maximum values.
(2) VR = 80 V; typical values.
(3) VR = 25 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.4
Fig.5
Reverse current as a function of junction
temperature.
1996 Sep 03
4
4
8
12
VR (V)
16
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
High-speed double diode
1PS226
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Fig.6 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.7 Forward recovery voltage test circuit and waveforms.
1996 Sep 03
5
t
tp
output
signal
Philips Semiconductors
Product specification
High-speed double diode
1PS226
PACKAGE OUTLINE
1.65
1.25
handbook, full pagewidth
0.50
0.35
0.2 M A
0.100
0.013
1.3
1.0
A
3
3.0
2.5
1.7
1.3
2
1
2.1
1.7
3.1
2.7
0.6
0.2
MSA313 - 1
0.26
0.10
Dimensions in mm.
Fig.8 SC59.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 03
6