DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 1PS193 High-speed diode Product specification Supersedes data of April 1996 1996 Sep 11 Philips Semiconductors Product specification High-speed diode 1PS193 FEATURES DESCRIPTION • Small plastic SMD package The 1PS193 is a high-speed switching diode, fabricated in planar technology, and encapsulated in the small plastic SMD SC59 package. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 80 V PINNING PIN • Repetitive peak reverse voltage: max. 85 V DESCRIPTION 1 anode 2 not connected 3 cathode • Repetitive peak forward current: max. 500 mA. 2 1 APPLICATIONS 2 n.c. • High-speed switching in e.g. surface mounted circuits. 1 3 3 Top view MAM085 Marking code: F3T. Fig.1 Simplified outline (SC59) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 80 V IF continuous forward current − 215 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current t = 1 µs − 4 A t=1s − 0.5 A see Fig.2; note 1 square wave; Tj = 25 °C prior to surge − 250 storage temperature −65 +150 °C junction temperature − 150 °C Ptot total power dissipation Tstg Tj Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 11 2 mW Philips Semiconductors Product specification High-speed diode 1PS193 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS TYP. MAX. UNIT see Fig.3 IF = 1 mA 610 − mV IF = 10 mA 740 − mV IF = 50 mA − 1.0 V IF = 100 mA − 1.2 V see Fig.4 − VR = 25 V 30 nA VR = 80 V − VR = 25 V; Tj = 150 °C − 30 µA VR = 80 V; Tj = 150 °C; − 100 µA 0.5 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.5 − 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.6 − 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tp = 20 ns; see Fig.7 − 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 11 3 VALUE UNIT 250 K/W 500 K/W Philips Semiconductors Product specification High-speed diode 1PS193 GRAPHICAL DATA MBD032 300 MBG382 300 handbook, halfpage IF (mA) IF (mA) (1) 200 200 100 100 0 0 0 100 T amb ( oC) 200 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 MBG380 2 10halfpage handbook, 2 VF (V) Forward current as a function of forward voltage. MBG446 0.8 handbook, halfpage Cd (pF) IR (µA) 0.6 10 (1) 1 10 1 (3) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 (2) (2) (3) 0.4 1 0.2 10 2 0 100 Tj (oC) 0 0 200 (1) VR = 80 V; maximum values. (2) VR = 80 V; typical values. (3) VR = 25 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.4 Fig.5 Reverse current as a function of junction temperature. 1996 Sep 11 4 4 8 12 VR (V) 16 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed diode 1PS193 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) IR = 1 mA. Fig.6 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.7 Forward recovery voltage test circuit and waveforms. 1996 Sep 11 5 t tp output signal Philips Semiconductors Product specification High-speed diode 1PS193 PACKAGE OUTLINE 1.65 1.25 handbook, full pagewidth 0.50 0.35 0.2 M A 0.100 0.013 1.3 1.0 A 3 3.0 2.5 1.7 1.3 2 1 2.1 1.7 3.1 2.7 0.6 0.2 MSA313 - 1 0.26 0.10 Dimensions in mm. Fig.8 SC59. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 11 6