BAS32L High-speed switching diode Rev. 7 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. 1.2 Features and benefits High switching speed: trr ≤ 4 ns Reverse voltage: VR ≤ 75 V Repetitive peak reverse voltage: VRRM ≤ 100 V Repetitive peak forward current: IFRM ≤ 450 mA Small hermetically sealed glass SMD package 1.3 Applications High-speed switching Reverse polarity protection 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter IF forward current IFRM repetitive peak forward current VR reverse voltage VF forward voltage trr reverse recovery time Conditions [1] IF = 100 mA [2] Min Typ Max Unit - - 200 mA - - 450 mA - - 75 V - - 1000 mV - - 4 ns [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAS32L NXP Semiconductors High-speed switching diode 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] k a 2 1 006aab040 [1] The marking band indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS32L - hermetically sealed glass surface-mounted package; 2 connectors SOD80C Table 4. Marking codes 4. Marking Type number Marking code BAS32L marking band 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BAS32L Product data sheet Symbol Parameter VRRM repetitive peak reverse voltage VR reverse voltage IF forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current Conditions Min Max Unit - 100 V - 75 V - 200 mA - 450 mA tp = 1 μs - 4 A tp = 1 ms - 1 A tp = 1 s - 0.5 A [1] square wave All information provided in this document is subject to legal disclaimers. Rev. 7 — 20 January 2011 [2] © NXP B.V. 2011. All rights reserved. 2 of 11 BAS32L NXP Semiconductors High-speed switching diode Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Ptot total power dissipation Tamb = 25 °C - 500 mW Tj junction temperature - 200 °C Tamb ambient temperature −65 +200 °C Tstg storage temperature −65 +200 °C [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Tj = 25 °C prior to surge. 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point [1] in free air [1] Min Typ Max Unit - - 350 K/W - - 300 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 5 mA 620 - 750 mV IF = 100 mA - - 1000 mV IF = 100 mA; Tj = 100 °C - - 930 mV VR = 20 V - - 25 nA VR = 75 V - - 5 μA VR = 20 V; Tj = 150 °C - - 50 μA VR = 75 V; Tj = 150 °C - - 100 μA IR Cd BAS32L Product data sheet reverse current diode capacitance VR = 0 V; f = 1 MHz trr reverse recovery time [1] VFR forward recovery voltage [2] - - 2 pF - - 4 ns - - 2.5 V [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [2] When switched from IF = 50 mA; tr = 20 ns. All information provided in this document is subject to legal disclaimers. Rev. 7 — 20 January 2011 © NXP B.V. 2011. All rights reserved. 3 of 11 BAS32L NXP Semiconductors High-speed switching diode mbg451 300 mbg464 600 IF (mA) IF (mA) 200 400 (1) (2) (3) 200 100 0 0 0 100 0 200 Tamb (°C) 1 VF (V) 2 (1) Tj = 175 °C; typical values FR4 PCB, standard footprint (2) Tj = 25 °C; typical values (3) Tj = 25 °C; maximum values Fig 1. Forward current as a function of ambient temperature; derating curve Fig 2. mbg704 102 Forward current as a function of forward voltage mgd006 103 IR (μA) IFSM (A) 102 10 (1) (2) (3) 10 1 1 10−1 10−1 1 10 102 103 104 10−2 0 100 tp (μs) Based on square wave currents. (1) VR = 75 V; maximum values Tj = 25 °C prior to surge (2) VR = 75 V; typical values Tj (°C) 200 (3) VR = 20 V; typical values Fig 3. Non-repetitive peak forward current as a function of pulse duration; maximum values BAS32L Product data sheet Fig 4. Reverse current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 7 — 20 January 2011 © NXP B.V. 2011. All rights reserved. 4 of 11 BAS32L NXP Semiconductors High-speed switching diode mgd004 1.2 Cd (pF) 1.0 0.8 0.6 0.4 0 10 20 VR (V) f = 1 MHz; Tj = 25 °C Fig 5. Diode capacitance as a function of reverse voltage; typical values 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS (1) 90 % VR mga881 input signal output signal Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ ≤ 0.05 Oscilloscope: Rise time tr = 0.35 ns (1) IR = 1 mA Fig 6. Reverse recovery time test circuit and waveforms I 1 kΩ RS = 50 Ω D.U.T. 450 Ω I V 90 % OSCILLOSCOPE VFR Ri = 50 Ω 10 % t tr t tp input signal output signal mga882 Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005 Fig 7. Forward recovery voltage test circuit and waveforms BAS32L Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 20 January 2011 © NXP B.V. 2011. All rights reserved. 5 of 11 BAS32L NXP Semiconductors High-speed switching diode 9. Package outline 0.3 0.3 1.60 1.45 3.7 3.3 Dimensions in mm Fig 8. 06-03-16 Package outline SOD80C 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAS32L [1] BAS32L Product data sheet Package SOD80C Description 4 mm pitch, 8 mm tape and reel Packing quantity 2500 10000 -115 -135 For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 7 — 20 January 2011 © NXP B.V. 2011. All rights reserved. 6 of 11 BAS32L NXP Semiconductors High-speed switching diode 11. Soldering 4.55 4.30 2.30 solder lands solder paste 2.25 1.70 1.60 solder resist occupied area Dimensions in mm 0.90 (2x) Fig 9. sod080c Reflow soldering footprint SOD80C 6.30 4.90 2.70 1.90 solder lands solder resist occupied area 2.90 1.70 tracks Dimensions in mm sod080c Fig 10. Wave soldering footprint SOD80C BAS32L Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 20 January 2011 © NXP B.V. 2011. All rights reserved. 7 of 11 BAS32L NXP Semiconductors High-speed switching diode 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS32L v.7 20110120 Product data sheet - BAS32L v.6 Modifications: • • Table 4 “Marking codes”: amended Section 13 “Legal information”: updated BAS32L v.6 20081029 Product data sheet - BAS32L v.5 BAS32L v.5 20080103 Product data sheet - BAS32L v.4 BAS32L v.4 20050322 Product data sheet - BAS32L v.3 BAS32L v.3 20020123 Product specification - BAS32L v.2 BAS32L v.2 19960910 Product specification - BAS32L v.1 BAS32L v.1 19960423 Product specification - - BAS32L Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 20 January 2011 © NXP B.V. 2011. All rights reserved. 8 of 11 BAS32L NXP Semiconductors High-speed switching diode 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. BAS32L Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 20 January 2011 © NXP B.V. 2011. All rights reserved. 9 of 11 BAS32L NXP Semiconductors High-speed switching diode Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BAS32L Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 20 January 2011 © NXP B.V. 2011. All rights reserved. 10 of 11 BAS32L NXP Semiconductors High-speed switching diode 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information . . . . . . . . . . . . . . . . . . . . . 6 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 January 2011 Document identifier: BAS32L