5962L0052401V

REVISIONS
LTR
DATE (YR-MO-DA)
APPROVED
A
Change paragraph 3.2.3. Remove radiation test circuit. – rrp
DESCRIPTION
00-10-13
R. MONNIN
B
Drawing updated to reflect current requirements. – gt
02-05-10
R. MONNIN
C
Add case outline H. Make changes to 1.2.4, 1.3, and figure 1. - ro
03-03-07
R. MONNIN
D
Add RHA designator “L” devices. Make changes to 1.5 and footnote 2 under
Table I. Delete 4.4.4.1.1 and 4.4.4.2. - ro
05-11-30
R. MONNIN
E
Add device type 02 tested at Low Dose Rate. Add RHA designator “R”
requirements. Make changes to 1.2.2, 1.5, Table I, figure 1, Table IIB, and
4.4.4.1. - ro
08-06-24
R. HEBER
F
Add paragraph 3.1.1 and Appendix A for microcircuit die.
Delete device class M references. Delete the words, “Radiation hardened”
from the title block. - ro
13-12-16
C. SAFFLE
REV
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REV STATUS
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PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
RAYMOND MONNIN
DRAWING APPROVAL DATE
MICROCIRCUIT, LINEAR, PRECISION VOLTAGE
COMPARATOR / BUFFER, MONOLITHIC SILICON
00-05-11
REVISION LEVEL
F
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-00524
1 OF 20
5962-E036-14
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
L
00524
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
G
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
LM111
02
LM111
Circuit function
Radiation hardened precision voltage
comparator / buffer
Low dose rate radiation hardened precision
voltage comparator / buffer
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
G
H
P
Z
Descriptive designator
Terminals
MACY1-X8
GDFP1-F10 or CDFP2-F10
GDIP1-T8 or CDIP2-T8
GDFP1-G10
8
10
8
10
Package style
Can
Flat pack
Dual-in-line
Flat pack with gull wing leads
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00524
A
REVISION LEVEL
F
SHEET
2
1.3 Absolute maximum ratings. 1/
Positive supply voltage (+VCC) .................................................. +30.0 V
Negative supply voltage (-VCC) ................................................. -30.0 V
Total supply voltage (+VCC to -VCC) ......................................... 36.0 V
Output to negative supply voltage .............................................. 50.0 V
GND to negative supply voltage ................................................ 30 V
Differential input voltage ............................................................ ±30.0 V
Sink current ............................................................................... 50 mA
Input voltage (VIN) ..................................................................... ±15 V 2/
Maximum strobe current ............................................................ 10 mA
Voltage at STROBE pin ............................................................. ±VCC – 5 V
Power dissipation (PD): 3/
Cases G, H, and Z ................................................................. 330 mW at TA = +25°C
Case P ................................................................................... 400 mW at TA = +25°C
Output short circuit duration ....................................................... 10 seconds
Storage temperature range ........................................................ -65°C ≤ TA ≤ +150°C
Junction temperature (TJ) .......................................................... +175°C
Lead temperature (soldering, 60 seconds) ................................ +300°C
Thermal resistance, junction-to-case (θJC):
Case G ................................................................................... 50°C/W
Cases H and Z ....................................................................... 24°C/W
Case P ................................................................................... 21°C/W
Thermal resistance, junction-to-ambient (θJA):
Case G ................................................................................... 162°C/W (still air at 0.5 W)
92°C/W (500 linear feet per minute air flow at 0.5 W)
Cases H and Z ....................................................................... 231°C/W
153°C/W (500 linear feet per minute air flow at 0.5 W)
Case P ................................................................................... 134°C/W
76°C/W (500 linear feet per minute air flow at 0.5 W)
1.4 Recommended operating conditions.
Supply voltage (±VCC) ............................................................... ±15 V
Ambient operating temperature range (TA) ................................ -55°C ≤ TA ≤ +125°C
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ This rating applies to VCC = ±15 V supplies. The positive input voltage limit is 30 V above the negative supply.
The negative input voltage limit is equal to the negative supply voltage or 30 V below the positive supply,
whichever is less.
3/ The maximum power dissipation must be derated at elevated temperatures and is dictated by TJ maximum,
θJA maximum, and TA. The maximum allowable power dissipation at any temperature is
PD max = (TJ max – TA) / θJA or the number given in the absolute maximum ratings, whichever is lower.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00524
A
REVISION LEVEL
F
SHEET
3
1.5 Radiation features. 4/ 5/
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device type 01:
RHA designator L ............................................................................. 50 krads(Si)
Maximum total dose available (dose rate = 10 mrads(Si)/s):
Device type 02:
RHA designator R ............................................................................. 100 krads(Si)
The manufacturer supplying device type 02 RHA parts on this drawing has performed a characterization test to demonstrate that
the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 method 1019 paragraph
3.13.1.1. Therefore this part may be considered ELDRS free. However, the manufacturer will continue to perform low dose rate
lot acceptance testing on each wafer lot or wafer until characterization testing has been performed according to test method
1019 of MIL-STD-883. Since the redesigned part did not demonstrate ELDRS per Method 1019 and the previously tested
device type 01 was not tested for ELDRS, device type 02 will be added to distinguish it from the 01 device type.
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
_____
4/ For device type 01, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low dose
rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in
MIL-STD-883, method 1019, condition A.
5/ For device type 02, this part has been tested and does not demonstrate low dose rate sensitivity. These parts may be
sensitive in a high dose environment. Radiation end point limits for the noted parameters are guaranteed for the
conditions specified in MIL-STD-883, method 1019, condition D.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00524
A
REVISION LEVEL
F
SHEET
4
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall
be provided with each lot of microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00524
A
REVISION LEVEL
F
SHEET
5
TABLE I. Electrical performance characteristics.
Test
Input offset voltage
Symbol
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
VIO
VIN = 0 V, RS = 50 Ω
Group A
subgroups
Device
type
1
All
Min
Max
+3.0
2,3
-4.0
+4.0
1
-3.0
+3.0
2,3
-4.0
+4.0
1
-3.0
+3.0
2,3
-4.0
+4.0
+VCC = +2.5 V, VIN = 0 V,
1
-3.0
+3.0
-VCC = -2.5 V, RS = 50 Ω
2,3
-4.0
+4.0
-3.0
+3.0
2,3
-4.5
+4.5
1
-3.0
+3.0
2,3
-4.5
+4.5
1
-3.0
+3.0
VCM = 13 V
2,3
-4.5
+4.5
VIN = 0 V, RS = 50 kΩ
1,2
-10
+10
3
-20
+20
1,2
-10
+10
3
-20
+20
-VCC = -0.5 V, RS = 50 Ω,
VCM = -14.5 V
+VCC = 2 V, VIN = 0 V,
-VCC = -28 V, RS = 50 Ω,
VCM = +13 V
VIO(R)
VIN = 0 V, RS = 50 Ω
1
+VCC = 29.5 V, VIN = 0 V,
-VCC = -0.5 V, RS = 50 Ω,
VCM = -14.5 V
+VCC = 2 V, VIN = 0 V,
-VCC = -28 V, RS = 50 Ω,
Input offset current
IIO
Unit
-3.0
+VCC = 29.5 V, VIN = 0 V,
Raised input offset
voltage
Limits
+VCC = 29.5 V, VIN = 0 V,
All
All
mV
mV
nA
-VCC = -0.5 V, RS = 50 kΩ,
VCM = -14.5 V
M, D, P, L
+VCC = 2 V, VIN = 0 V,
1
01
-50
+50
1,2
All
-10
+10
-20
+20
-50
+50
-VCC = -28 V, RS = 50 kΩ,
3
VCM = 13 V
M, D, P, L
1
01
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00524
A
REVISION LEVEL
F
SHEET
6
TABLE I. Electrical performance characteristics – Continued.
Test
Raised input offset
current
Symbol
IIO(R)
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
1,2
All
VIN = 0 V, RS = 50 kΩ
3
M, D, P, L, R
Input bias current
+IIB
VIN = 0 V, RS = 50 kΩ
Limits
Unit
Min
Max
-25
+25
-50
+50
1
02
-100
+100
1,2
All
-100
+0.1
-150
+0.1
3
M, D, P, L
1
01
-150
+0.1
M, D, P, L, R
1
02
-180
+0.1
1,2
All
-150
+0.1
-200
+0.1
+VCC = 29.5 V, VIN = 0 V,
nA
nA
-VCC = -0.5 V, RS = 50 kΩ,
3
VCM = -14.5 V
M, D, P, L
1
01
-175
+0.1
M, D, P, L, R
1
02
-225
+0.1
1,2
All
-150
+0.1
-200
+0.1
-100
+0.1
-150
+0.1
+VCC = 2 V, VIN = 0 V,
-VCC = -28 V, RS = 50 kΩ,
3
VCM = 13 V
-IIB
1,2
VIN = 0 V, RS = 50 kΩ
All
3
M, D, P, L
1
01
-150
+0.1
M, D, P, L, R
1
02
-180
+0.1
1,2
All
-150
+0.1
-200
+0.1
+VCC = 29.5 V, VIN = 0 V,
-VCC = -0.5 V, RS = 50 kΩ,
3
VCM = -14.5 V
M, D, P, L
1
01
-175
+0.1
M, D, P, L, R
1
02
-225
+0.1
1,2
All
-150
+0.1
-200
+0.1
+VCC = 2 V, VIN = 0 V,
-VCC = -28 V, RS = 50 kΩ,
3
VCM = 13 V
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00524
A
REVISION LEVEL
F
SHEET
7
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Collector output voltage 4/
(STROBED)
VO(STB)
Common mode rejection
CMR
+VIN = GND, -VIN = 15 V,
RS = 50 Ω, ISTB = -3.0 mA
-28 V ≤ -VCC ≤ -0.5 V,
RS = 50 Ω
All
14
V
1,2,3
All
80
dB
80
RS = 50 Ω
-14.5 V ≤ VCM ≤ 13 V,
80
RS = 50 Ω
VOL
Max
1,2,3
2 V ≤ +VCC ≤ 29.5 V,
Low level output voltage
Unit
1,2,3
+VCC = 4.5 V,
All
0.4
V
-VCC = GND, VID = -6 mV,
IOUT = 8 mA, ±VIN = 0.5 V
0.4
+VCC = 4.5 V,
-VCC = GND, VID = -6 mV,
IOUT = 8 mA, ±VIN = 3 V
1.5
VID = -5 mV,
IOUT = 50 mA, ±VIN = 13 V
1.5
VID = -5 mV,
IOUT = 50 mA, ±VIN = -14 V
Output leakage current
ICEX
+VCC = 18 V,
1
-VCC = -18 V,
2
VOUT = 32 V
Input leakage current 5/
II
All
-1
10
-1
500
M, D, P, L
1
01
-25
+25
M, D, P, L, R
1
02
-1
+25
1,2,3
All
-5
500
-5
500
+VCC = 18 V, -VCC = -18 V,
nA
nA
+VIN = +12 V, -VIN = -17 V
+VCC = 18 V, -VCC = -18 V,
+VIN = -17 V, -VIN = +12 V
Positive supply current
1,2
+ICC
All
3
6.0
mA
7.0
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00524
A
REVISION LEVEL
F
SHEET
8
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Negative supply current
1,2
-ICC
All
Temperature coefficient
input offset current
Output short circuit 6/
current
Adjustment for input
offset voltage
Voltage gain (emitter)
2
∆T
-55°C ≤ TA ≤ +25°C
3
∆IIO /
+25°C ≤ TA ≤ +125°C
2
∆T
-55°C ≤ TA ≤ +25°C
3
IOS
VOUT = 5 V, t ≤ 10 ms,
1
+VIN = 0 V, -VIN = 0.1 V
2
150
3
250
VIO
(ADJ)+
VOUT = 0 V, VIN = 0 V,
VIO
(ADJ)-
RS = 50 Ω, TA = +25°C
+AVE
RL = 600 Ω
1
tRLHC
tRHLC
4
25
-25
25
-100
100
-200
200
All
200
All
+5
All
µV/°C
pA/°C
mA
mV
10
8
4
10
5,6
8
All
8A
7,8B
VOD(overdrive) = +5 mV,
All
8A
VIN = 100 mV
4/
5/
6/
7/
All
-25
5,6
7,8B
VOD(overdrive) = -5 mV,
CL = 50 pF(min),
3/
All
-5
VIN = -100 mV
1/
2/
-6
+25°C ≤ TA ≤ +125°C
CL = 50 pF(min),
Response time, 7/
collector output
mA
∆VIO /
-AVE
Response time, 7/
collector output
Max
-5
3
Temperature coefficient
input offset voltage
Unit
V/mV
0
300
0
640
0
300
0
500
ns
ns
Unless otherwise specified, ±VCC = ±15 V and VCM = 0 V.
Devices supplied to this drawing have been characterized through all levels M, D, P, L and R of irradiation.
However, device 01 is only tested at the “M, D, P, and L” levels and device 02 is only tested at the “M, D, P, L, and R”
levels. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post
irradiation electrical measurements for any RHA level, TA = +25°C.
For device type 01, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low
dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified
in MIL-STD-883, method 1019, condition A. For device type 02, this part has been tested and does not demonstrate low
dose rate sensitivity. These parts may be sensitive in a high dose environment. Radiation end point limits for the noted
parameters are guaranteed for the conditions specified in MIL-STD-883, test method 1019, condition D.
ISTB = -2 mA at TA = -55°C.
VID is voltage difference between inputs.
Actual minimum limit used is 5 mA due to test setup.
Uses AC test tape and hardware.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-00524
A
REVISION LEVEL
F
SHEET
9
Device types
01 and 02
Case outlines
G and P
Terminal number
H and Z
Terminal symbol
1
GROUND
GROUND
2
+INPUT
+INPUT
3
-INPUT
-INPUT
4
-VCC
NC
5
BALANCE
-VCC
6
BAL / STRB
BALANCE
7
OUTPUT
BAL / STB
8
+VCC
NC
9
---
OUTPUT
10
---
+VCC
NC = No connection
FIGURE 1. Terminal connections.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
F
SHEET
10
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
STANDARD
MICROCIRCUIT DRAWING
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APR 97
SIZE
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REVISION LEVEL
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TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
Device
class Q
class V
----1,2,3,4,5, 1/
6,7,8A,8B
1,2,3,4,5,6,7
1
1,2,3,4, 1/ 2/
5,6,7,8A,8B
1,2,3,4,5,6,
7,8A,8B
1,2,3 2/
1
1,2,3
1
1
1/ PDA applies to subgroup 1.
2/ Delta limits as specified in table IIB shall be required where specified,
and the delta limits shall be completed with reference to the previous
electrical parameters.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point
electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in
table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A for device type 01, condition D for device type 02, and as specified herein.
STANDARD
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TABLE IIB. Delta limits at +25°C.
Test
Input offset voltage
Symbol
VIO
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
VIN = 0 V, RS = 50 Ω
1
Device
type
All
Limits
Unit
Min
Max
-0.5
0.5
-0.5
0.5
-0.5
0.5
-12.5
12.5
-12.5
12.5
-12.5
12.5
-12.5
12.5
-12.5
12.5
-12.5
12.5
-5
5
mV
+VCC = 29.5 V, VIN = 0 V,
-VCC = -0.5 V, RS = 50 Ω,
VCM = -14.5 V
+VCC = 2 V, VIN = 0 V,
-VCC = -28 V, RS = 50 Ω,
VCM = 13 V
Input bias current
+IIB
1
VIN = 0 V, RS = 50 kΩ
All
nA
+VCC = 29.5 V, VIN = 0 V,
-VCC = -0.5 V, RS = 50 kΩ,
VCM = -14.5 V
+VCC = 2 V, VIN = 0 V,
-VCC = -28 V, RS = 50 kΩ,
VCM = 13 V
-IIB
VIN = 0 V, RS = 50 kΩ
+VCC = 29.5 V, VIN = 0 V,
-VCC = -0.5 V, RS = 50 kΩ,
VCM = -14.5 V
+VCC = 2 V, VIN = 0 V,
-VCC = -28 V, RS = 50 kΩ,
VCM = 13 V
+VCC = 18 V,
Output leakage current
ICEX
1
-VCC = -18 V,
All
nA
VOUT = 32 V
1/
Unless otherwise specified, ±VCC = ±15 V and VCM = 0 V.
STANDARD
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5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing.
STANDARD
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00524
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
00524
02
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
02
Circuit function
LM111
Low dose rate radiation hardened precision
voltage comparator / buffer
A.1.2.3 Device class designator.
Device class
Q or V
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Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00524
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
02
A-1
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
02
A-1
A.1.2.4.3 Interface materials.
Die type
Figure number
02
A-1
A.1.2.4.4 Assembly related information.
Die type
Figure number
02
A-1
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
STANDARD
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COLUMBUS, OHIO 43218-3990
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00524
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.3 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
STANDARD
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COLUMBUS, OHIO 43218-3990
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00524
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4 and
4.4.4.1 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to
DLA Land and Maritime -VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00524
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00524
Die bond pad coordinate locations (H step)
(Referenced to die center, coordinates in µm) NC = no connection. NU = not used.
Terminal
Pad number
X / Y Coordinates
symbol
GROUND
1
Pad size
X
Y
X
Y
485.14
-434.34
111.76
91.44
+INPUT
2
492.76
607.06
96.52
96.52
-INPUT
3
400.05
770.89
104.14
99.06
-VCC
4
-355.60
770.89
91.44
99.06
BALANCE
5
-495.30
770.89
91.44
99.06
BAL / STB
6
-488.95
68.58
104.14
106.68
NC
7
-482.60
-114.30
116.84
116.84
NC
8
-495.30
-298.45
91.44
104.14
OUTPUT
9
478.79
-768.35
99.04
104.14
+VCC
10
485.14
-593.09
111.76
99.06
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 1143.00 µm x 1651.00 µm
45.0 mils x 65.0 mils
Die thickness: 304.8 µm
Interface materials.
Top metallization: Al 0.5% Cu
Backside metallization: Bare back
Glassivation.
Type: Vapox
Thickness: 10 kÅ
Substrate:
Assembly related information.
Substrate potential: floating
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions - continued.
STANDARD
MICROCIRCUIT DRAWING
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STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 13-12-16
Approved sources of supply for SMD 5962-00524 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962L0052401VGA
27014
LM111HLQMLV
5962L0052401VHA
27014
LM111WLQMLV
5962L0052401VPA
27014
LM111J-8LQMLV
5962L0052401VZA
27014
LM111WGLQMLV
5962P0052401QGA
27014
LM111HPQML
5962P0052401VGA
27014
LM111HPQMLV
5962P0052401VHA
27014
LM111WPQMLV
5962P0052401QPA
27014
LM111J-8PQML
5962P0052401VPA
27014
LM111J-8PQMLV
5962P0052401QZA
27014
LM111WGPQML
5962P0052401VZA
27014
LM111WGPQMLV
5962R0052402VGA
27014
LM111HRLQMLV
5962R0052402VHA
27014
LM111WRLQMLV
5962R0052402VPA
27014
LM111J-8RLQMLV
5962R0052402VZA
27014
LM111WGRLQMLV
5962R0052402V9A
27014
LM111-MDE
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
1 of 2
STANDARD MICROCIRCUIT DRAWING BULLETIN – CONTINUED.
DATE: 13-12-16
Vendor CAGE
number
Vendor name
and address
27014
National Semiconductor
2900 Semiconductor Drive
P.O. Box 58090
Santa Clara, CA 95052-8090
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
2 of 2