5962R9679801V

REVISIONS
LTR
DATE (YR-MO-DA)
APPROVED
A
Change the location of footnote 2/ under Table IIA in accordance with N.O.R.
5962-R038-97.
DESCRIPTION
96-11-04
R. MONNIN
B
Add case outline X, paragraph 1.5, and radiation hardened requirements.
Make changes to 1.2.4, 1.3, table I, figure 1, and 4.4.4. Redrawn. - ro
99-12-06
R. MONNIN
C
Delete the radiation hardened circuits and make change to 3.2.3. - ro
01-06-12
R. MONNIN
D
Make changes to the output saturation voltage test conditions as specified
under TABLE I. - ro
05-03-03
R. MONNIN
E
Delete the Accelerated aging and Dose rate burnout tests. Make changes to
+ICC, -ICC, ILEAK, IBIAS, VOS, IOS, VIN, VSAT, AV, and CMRR tests as
specified under Table I. Make changes to Table IIB. Add radiation hardened
devices back to the document. - ro
08-09-03
R. HEBER
F
Add device type 02 tested at Low Dose Rate.
Make changes to 1.2.2, 1.5, Table I, figure 1, Table IIB, and 4.4.4.1.
Add paragraph 3.1.1 and microcircuit die Appendix A. - ro
08-12-16
R. HEBER
G
Make clarification to figure A-1 special assembly instructions notes.
Delete device class M references. - ro
13-05-06
C. SAFFLE
REV
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SHEET
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REV STATUS
REV
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OF SHEETS
SHEET
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PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
MICHAEL FRYE
DRAWING APPROVAL DATE
MICROCIRCUIT, LINEAR, HIGH SPEED, DUAL,
VOLTAGE COMPARATOR, MONOLITHIC SILICON
96-03-21
REVISION LEVEL
G
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-96798
1 OF 18
5962-E383-13
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
96798
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
C
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
02
Circuit function
LM119
LM119
High speed, dual, voltage comparator
Low dose rate radiation hardened high
speed, dual, voltage comparator
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
C
H
I
X
Descriptive designator
GDIP1-T14 or CDIP2-T14
GDFP1-F10 or CDFP2-F10
MACY1-X10
GDFP1-G10
Terminals
14
10
10
10
Package style
Dual-in-line
Flat pack
Can
Flat pack with gullwing leads
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
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A
REVISION LEVEL
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SHEET
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1.3 Absolute maximum ratings. 1/
Total supply voltage ........................................................................................
Output to negative supply voltage ...................................................................
Ground to negative supply voltage ..................................................................
Ground to positive supply voltage ...................................................................
Differential input voltage .................................................................................
Input voltage ...................................................................................................
Output short circuit duration (internally limited) ...............................................
Storage temperature range .............................................................................
Power dissipation (PD) (TA = +25°C) ...............................................................
Lead temperature (soldering, 10 seconds) ......................................................
Junction temperature (TJ) ...............................................................................
Thermal resistance, junction-to-case (θJC):
Case outline C .............................................................................................
Case outlines H and X .................................................................................
Case outline I ...............................................................................................
Thermal resistance, junction-to-case (θJA):
Case outline C .............................................................................................
36 V
36 V
25 V
18 V
±5 V
±15 V 2/
10 seconds
-65°C to +150°C
500 mW 3/
+260°C
+150°C
11°C/W
13°C/W
31°C/W
94°C/W still air
52°C/W 500 LFPM
Case outlines H and X ................................................................................. 215°C/W still air
132°C/W 500 LFPM
Case outline I ............................................................................................... 162°C/W still air
88°C/W 500 LFPM
1.4 Recommended operating conditions.
Ambient operating temperature range (TA) ..................................................... -55°C to +125°C
______
1/
2/
3/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
For supply voltages less than ±15 V, the absolute maximum input voltage is equal to the supply voltage.
Maximum power dissipation must be derated at elevated temperatures and is dictated by TJ (maximum junction
temperature), θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum
allowable power dissipation at any temperature is PD = (TJ(max) – TA) / θJA or the number given in absolute maximum
ratings paragraph 1.3 herein, whichever is lower.
STANDARD
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
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SHEET
3
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device type 01
RHA level R ............................................................................................. ≥100 krads(Si) 4/
Maximum total dose available (dose rate = 10 mrads (Si)/s):
Device type 02
RHA level R ............................................................................................. ≥100 krads(Si) 5/
The manufacturer supplying device type 02 RHA parts on this drawing has performed a characterization test to demonstrate that
the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 Method 1019 paragraph
3.13.1.1. Therefore this part may be considered ELDRS free. However, the manufacturer will continue to perform low dose rate
lot acceptance testing on each wafer lot or wafer until characterization testing has been performed according to test method
1019 of MIL-STD-883. Since the redesigned part did not demonstrate ELDRS per Method 1019 and the previously tested
device type 01 was not tested for ELDRS, device type 02 will be added to distinguish it from the 01 device type.
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at https://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
______
4/
5/
For device type 01, these parts may be dose rate sensitive in a space environment and may demonstrate enhanced low
dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in
MIL-STD-883, method 1019, condition A.
For device type 02, this part has been tested and does not demonstrate low dose rate sensitivity. These parts may be
sensitive in a high dose environment. Radiation end point limits for the noted parameters are guaranteed for the
conditions specified in MIL-STD-883, method 1019, condition D.
STANDARD
MICROCIRCUIT DRAWING
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SIZE
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A
REVISION LEVEL
G
SHEET
4
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall
be provided with each lot of microcircuits delivered to this drawing.
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REVISION LEVEL
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SHEET
5
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Positive supply current
Negative supply current
Output leakage current 4/
Input bias current
+ICC
-ICC
ILEAK
IBIAS
VS = ±15 V, VO = low,
1
+V = 5.6 V thru 1.4 kΩ
2,3
VS = ±15 V, VO = low,
1
+V = 5.6 V thru 1.4 kΩ
2
-4.5
3
-6.0
+VS = +15 V, -VS = -1 V,
1
VGND = 0 V, VOUT = 35 V
2,3
VS = ±15 V
1
M,D,P,L,R
+VS = 5 V, -VS = 0 V 5/
M,D,P,L,R
Input offset voltage
VOS
VCM = 1 V, RS ≤ 5 kΩ
M,D,P,L,R
+VS = 5 V, -VS = 0 V, 5/
VCM = 3 V, RS ≤ 5 kΩ
M,D,P,L,R
VS = ±15 V,
VCM = 12 V, RS ≤ 5 kΩ
M,D,P,L,R
VS = ±15 V,
VCM = -12 V, RS ≤ 5 kΩ
M,D,P,L,R
Max
11
mA
11.5
01, 02
-4.2
01, 02
mA
1.8
µA
10
01, 02
.475
2,3
.95
1
1
1
.475
2,3
.95
1
1
1
+VS = 5 V, -VS = 0 V, 5/
01, 02
Unit
01, 02
-3.8
3.8
2,3
-6.8
6.8
1
-4.0
4.0
1
-3.8
3.8
2,3
-6.8
6.8
1
-4.0
4.0
1
-3.8
3.8
2,3
-6.8
6.8
1
-4.0
4.0
1
-3.8
3.8
2,3
-6.8
6.8
1
-4.0
4.0
µA
mV
See footnotes at end of table.
STANDARD
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TABLE I. Electrical performance characteristics – Continued.
Test
Input offset current
Symbol
IOS
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
VCM = 1 V
+VS = 5 V, VCM = 3 V 5/
VS = ±15 V, VCM = 12 V
VS = ±15 V, VCM = -12 V
Input voltage range
Output saturation
voltage
VIN
VSAT
-75
75
2,3
-100
100
1
-75
75
2,3
-100
100
1
-75
75
2,3
-100
100
1
-75
75
2,3
-100
100
-12
12
1
3
1,2,3
+VS = 5 V, -VS = 0 V 6/
1,2,3
1,2,3
IOUT = 25 mA, VIN ≤ -5 mV
+VS = 3.5 V, -VS = -1 V,
VIN ≤ -6 mV, ISINK ≤ 3.2 mA
Unit
Max
VS = ±15 V 5/ 6/
VS = ±15 V, 4/
Limits
Min
1
+VS = 5 V, -VS = 0 V, 5/
Device
Type
01, 02
01, 02
01, 02
1.5
1,2
0.4
3
0.6
nA
V
V
See footnotes at end of table.
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7
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
Type
Limits
Min
AV
Voltage gain
Common mode
rejection ratio
CMRR
VS = ±15 V,
4
7/
01, 02
5,6
10
+VS = 5 V, -VS = 0 V, 5/ 7/
4
8
∆VOUT = 4.5 V, RL = 1.4 kΩ
5
5
6
5.8
4
01, 02
Max
10.5
∆VOUT = 12 V, RL = 1.4 kΩ
VS = ±15 V, VCM = ±12 V
Unit
k
80
dB
1/
VCM = 0 V.
2/
RHA devices supplied to this drawing have been characterized and are tested through all levels M, D, P, L, and R of
irradiation. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post
irradiation electrical measurements for any RHA level, TA = +25°C.
3/
For device type 01, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low dose
rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in
MIL-STD-883, method 1019, condition A. For device type 02, this part has been tested and does not demonstrate low
dose rate sensitivity. These parts may be sensitive in a high dose environment. Radiation end point limits for the noted
parameters are guaranteed for the conditions specified in MIL-STD-883, test method 1019, condition D.
4/
VIN ≥ 8 mV at extremes for ILEAK and VIN ≤ -8 mV at extremes for VSAT, (VIN to exceed VOS).
5/
5 V differential across +VS and -VS.
6/
Parameter guaranteed by VOS and IIO.
7/
k = V/mV.
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Device types
Case outlines
Terminal
number
01 and 02
C
H, I, and X
Terminal symbol
1
NC
OUTPUT 1
2
NC
GND 1
3
GND 1
+INPUT 1
4
+INPUT 1
-INPUT 1
5
-INPUT 1
-VS
6
-VS
OUTPUT 2
7
OUTPUT 2
GND 2
8
GND 2
+INPUT 2
9
+INPUT 2
-INPUT 2
10
-INPUT 2
+VS
11
+VS
---
12
OUTPUT 1
---
13
NC
---
14
NC
---
No connection.
FIGURE 1. Terminal connections.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point
electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in
table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A for device type 01, condition D for device type 02, and as specified herein.
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REVISION LEVEL
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10
TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
Device
class Q
class V
----1,2,3,4,5,6 1/
1,2,3,4,5,6
1/
1,2,3,4,5,6
1,2,3,4,5,6
1,2,3,4,5,6
1,2,3,4,5,6
2/
1,2,3,4,5,6
1,2,3,4,5,6
1
1
1/ PDA applies to subgroup 1.
2/ Delta limits as specified in table IIB shall be required where specified,
and the delta limits shall be completed with reference to the previous
electrical parameters.
TABLE IIB. Delta limits. 1/
Parameters
Symbol
Positive supply
current
+ICC
Negative supply
current
-ICC
Input offset voltage
VOS
1/
Conditions
VS = ±15 V, VO = low,
+V = 5.6 thru 1.4 kΩ
VS = ±15 V, VO = low,
+V = 5.6 thru 1.4 kΩ
+VS = 5 V, -VS = 0 V,
VCM = 1 V, RS ≤ 5 kΩ
Device types
Limit
01, 02
±1 mA
01, 02
±0.5 mA
01, 02
±0.4 mV
VCM = 0 V, delta calculations performed on QMLV devices at group B, subgroup 5 only.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
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6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing.
STANDARD
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5962-96798
A
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96798
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
96798
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
02
Circuit function
LM119
LM119
High speed, dual, voltage comparator
Low dose rate radiation hardened high
speed, dual, voltage comparator
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
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APPENDIX A FORMS A PART OF SMD 5962-96798
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01, 02
A-1
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01, 02
A-1
A.1.2.4.3 Interface materials.
Die type
Figure number
01, 02
A-1
A.1.2.4.4 Assembly related information.
Die type
Figure number
01, 02
A-1
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96798
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at https://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.3 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96798
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and
Maritime -VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96798
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96798
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REVISION LEVEL
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96798
Die bond pad coordinate locations (C-step)
(Referenced to die center, coordinates in µm) NC = no connection, NU = not used
Signal name
Pad number
X / Y coordinates
Pad size
X
Y
X
Y
OUTPUT 1
1
613
901
109
x
91
GND 1
2
-613
892
109
x
109
+INPUT 1
3
-613
46
109
x
109
-INPUT 1
4
-613
-123
109
x
109
V-
5
-613
-744
109
x
101
NC
6
-622
-901
91
x
91
OUTPUT 2
7
-461
-901
109
x
91
GND 2
8
613
-892
109
x
109
+INPUT 2
9
613
-237
109
x
109
-INPUT 2
10
613
123
109
x
109
V+
11
613
744
109
x
101
Die bonding pad locations and electrical functions for device types 01 and 02.
Die physical dimensions.
Die size: 1498.60 µm x 2057.40 µm
Die thickness: 330 µm nominal
Minimum pitch: 157 µm nominal
Interface materials.
Top metallization: Al 0.5% CU
Backside metallization: Bare back
Glassivation.
Type: Vapox over metal (VOM only)
Thickness: 8 kÅ – 12 kÅ
Substrate: Silicon
Assembly related information.
Substrate potential: VSpecial assembly instructions: Substrate must be connected to V-.
FIGURE A-1. Die bonding pad locations and electrical functions - Continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96798
A
REVISION LEVEL
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STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 13-05-06
Approved sources of supply for SMD 5962-96798 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-9679801VCA
27014
LM119J-QMLV
5962-9679801VHA
3/
LM119W-QMLV
5962-9679801VIA
27014
LM119H-QMLV
5962-9679801VXA
3/
LM119WG-QMLV
5962R9679801QCA
3/
LM119JRQML
5962R9679801QHA
3/
LM119WRQML
5962R9679801QIA
3/
LM119HRQML
5962R9679801QXA
3/
LM119WGRQML
5962R9679801VCA
27014
LM119JRQMLV
5962R9679801VHA
27014
LM119WRQMLV
5962R9679801VIA
27014
LM119HRQMLV
5962R9679801VXA
27014
LM119WGRQMLV
5962R9679802VCA
27014
LM119JRLQMLV
5962R9679802VHA
27014
LM119WRLQMLV
5962R9679802VIA
27014
LM119HRLQMLV
5962R9679802VXA
27014
LM119WGRLQMLV
5962R9679801V9A
27014
LM119 MDR
5962R9679802V9A
27014
LM119 MDE
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
1 of 2
STANDARD MICROCIRCUIT DRAWING BULLETIN – CONTINUED.
DATE: 13-05-06
Vendor CAGE
number
Vendor name
and address
27014
National Semiconductor
2900 Semiconductor Drive
P.O. Box 58090
Santa Clara, CA 95052-8090
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
2 of 2