IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.050 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single D2PAK (TO-262) G G D S Available Available Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. D I2PAK Advanced process technology Surface mount Low-profile through-hole (IRFZ34L, SiHFZ34L) 175 °C operating temperature Fast switching Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 (TO-263) DESCRIPTION G D Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application. The through-hole version (IRFZ34L, SiHFZ34L) is available for low-profile applications. S S N-Channel MOSFET ORDERING INFORMATION D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and halogen-free SiHFZ34S-GE3 SiHFZ34STRL-GE3 SiHFZ34L-GE3 Lead (Pb)-free IRFZ34SPbF IRFZ34STRLPbF a IRFZ34LPbF Package I2PAK (TO-262) Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT VDS VGS 60 ± 20 30 21 120 0.59 200 88 3.7 4.5 -55 to +175 300 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a, e Linear Derating Factor Single Pulse Avalanche Energy b, e Maximum Power Dissipation Peak Diode Recovery dV/dt c, e Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d ID IDM EAS TC = 25 °C TA = 25 °C PD dV/dt TJ, Tstg for 10 s UNIT V A W/°C mJ W V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, Starting TJ = 25 °C, L = 260 μH, Rg = 25 , IAS = 30 A (see fig. 12). c. ISD 30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. Uses IRFZ34, SiHFZ34 data and test conditions. S15-1659-Rev. D, 20-Jul-15 Document Number: 90368 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB mount) a PARAMETER RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C / W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS VDS VGS = 0 V, ID = 250 μA MIN. TYP. MAX. UNIT 60 - - V Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ - 0.065 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs Reference to 25 °C, ID = 1 mA c ID = 18 A b VGS = 10 V VDS = 25 V, ID = 18 A b μA - - 0.05 9.3 - - S - 1200 - - 600 - - 100 - - - 46 - - 11 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c VGS = 10 V ID = 30 A, VDS = 48 V, see fig. 6 and 13 b, c Gate-Drain Charge Qgd - - 22 Turn-On Delay Time td(on) - 13 - - 100 - - 29 - - 52 - Rise Time Turn-Off Delay Time tr td(off) VDD = 30 V, ID = 30 A, Rg = 12 , RD = 1.0 , see fig. 10 b, c Fall Time tf Internal Source Inductance LS Between lead, and center of die contact - 7.5 - IS MOSFET symbol showing the integral reverse p - n junction diode - - 30 - - 120 pF nC ns nH Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current a Body Diode Voltage ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton D A G TJ = 25 °C, IS = 30 A, VGS = 0 S Vb TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μs b, c - - 1.6 V - 120 230 ns - 700 1400 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Uses IRFZ34, SiHFZ34 data and test conditions. S15-1659-Rev. D, 20-Jul-15 Document Number: 90368 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics S15-1659-Rev. D, 20-Jul-15 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 90368 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S15-1659-Rev. D, 20-Jul-15 Vishay Siliconix Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 90368 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. Rg + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD Rg D.U.T. + - I AS V DD VDS 10 V tp 0.01 W Fig. 12a - Unclamped Inductive Test Circuit S15-1659-Rev. D, 20-Jul-15 IAS Fig. 12b - Unclamped Inductive Waveforms Document Number: 90368 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Maximum Avalanche Energy vs. Drain Current S15-1659-Rev. D, 20-Jul-15 Fig. 13b - Gate Charge Test Circuit Document Number: 90368 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90368. S15-1659-Rev. D, 20-Jul-15 Document Number: 90368 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 Revision: 15-Sep-08 www.vishay.com 1 Package Information Vishay Siliconix I2PAK (TO-262) (HIGH VOLTAGE) A (Datum A) E B c2 A E A L1 Seating plane D1 D C L2 C B B L A c 3 x b2 E1 A1 3xb Section A - A Base metal 2xe b1, b3 Plating 0.010 M A M B c1 c (b, b2) Lead tip Section B - B and C - C Scale: None MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380 A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 - b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420 b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 - b2 1.14 1.78 0.045 0.070 e b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555 c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065 c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146 c2 1.14 1.65 0.045 0.065 2.54 BSC 0.100 BSC ECN: S-82442-Rev. A, 27-Oct-08 DWG: 5977 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body. 3. Thermal pad contour optional within dimension E, L1, D1, and E1. 4. Dimension b1 and c1 apply to base metal only. Document Number: 91367 Revision: 27-Oct-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000