IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 150 °C Operating Temperature • Compliant to RoHS Directive 2002/95/EC 200 RDS(on) () VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free D2PAK (TO-263) SiHL630S-GE3 IRL630SPbF SiHL630S-E3 D2PAK (TO-263) SiHL630STRR-GE3a IRL630STRRPbFa SiHL630STR-E3a D2PAK (TO-263) SiHL630STRL-GE3a IRL630STRLPbFa SiHL630STL-E3a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT VDS VGS 200 ± 10 9.0 5.7 36 0.59 0.025 250 9.0 7.4 74 3.1 5.0 - 55 to + 150 300d Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS at 5 V TC = 25 °C TC = 100 °C Currenta Pulsed Drain Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ID IDM EAS IAR EAR TC = 25 °C TA = 25 °C PD dV/dt TJ, Tstg for 10 s UNIT V A W/°C mJ A mJ W V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12). c. ISD 9.0 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90390 S11-1044-Rev. C, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRL630S, SiHL630S Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - 62 Maximum Junction-to-Ambient (PCB Mount)a RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0, ID = 250 μA 200 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.27 - V/°C VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 10 V - - ± 100 VDS = 200 V, VGS = 0 V - - 25 VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 VGS = 5.0 V ID = 5.4 Ab - - 0.40 VGS = 4.0 V Ab - - 0.50 4.8 - - - 1100 - - 220 - - 70 - - - 40 ID = 4.5 VDS = 50 V, ID = 5.4 Ab μA S Dynamic Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 pF Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 5.5 Gate-Drain Charge Qgd - - 24 Turn-On Delay Time td(on) - 8.0 - tr - 57 - - 38 - - 33 - - 4.5 - - 7.5 - - - 9.0 - - 36 - - 2.0 - 230 350 ns - 1.7 2.6 μC Rise Time Turn-Off Delay Time Fall Time td(off) VGS = 10 V ID = 9.0 A, VDS = 160 V, see fig. 6 and 13b VDD = 100 V, ID = 9.0 A, Rg = 6.0 , RD = 11 , see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 9.0 A, VGS = 0 Vb TJ = 25 °C, IF = 9.0 A, dI/dt = 100 A/μsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 90390 S11-1044-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRL630S, SiHL630S Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.75V 2.50V BOTTOM 2.25V I D , Drain-to-Source Current (A) I , Drain-to-Source Current (A) D TOP 10 1 2.25V 20μs PULSE WIDTH Tc = 25°C 0.1 0.1 1 10 100 A 10 TJ = 150°C 1 TJ = 25°C 0.1 0.01 2.0 VDS , Drain-to-Source Voltage (V) R DS(on) , Drain-to-Source On Resistance (Normalized) VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.75V 2.50V BOTTOM 2.25V I , Drain-to-Source Current (A) D 10 2.25V 1 20μs PULSE WIDTH TC = 150°C 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 90390 S11-1044-Rev. C, 30-May-11 3.0 3.5 4.0 4.5 A 5.0 Fig. 3 - Typical Transfer Characteristics TOP 0.1 2.5 VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TC = 25 °C 100 V DS = 50V 20μs PULSE WIDTH A 2.5 ID = 9.0A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 5.0V 0 20 40 60 A 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRL630S, SiHL630S Vishay Siliconix 100 V GS = 0V, f = 1MHz C iss = C gs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd ISD , Reverse Drain Current (A) C, Capacitance (pF) 2000 1500 Ciss 1000 C oss 500 10 TJ = 150°C TJ = 25°C 1 Crss A 0 1 10 VGS = 0V 0.1 0 100 V DS , Drain-to-Source Voltage (V) 1.2 A 1.6 Fig. 7 - Typical Source-Drain Diode Forward Voltage 100 I D = 9.0A OPERATION IN THIS AREA LIMITED BY R DS(on) VDS = 160V VDS = 100V VDS = 40V 8 10μs I D , Drain Current (A) V GS , Gate-to-Source Voltage (V) 0.8 V SD , Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 10 0.4 6 4 10 100μs 1ms 1 10ms 100ms 2 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 20 30 40 A Q G , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 T C = 25°C T J = 150°C Single Pulse 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 90390 S11-1044-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRL630S, SiHL630S Vishay Siliconix RD VDS 10 ID, Drain Current (Amps) VGS D.U.T. Rg 8 + - VDD 5V 6 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit 4 VDS 2 90 % 0 25 50 75 100 A 125 150 TC , Case Temperature (°C) 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PD M 0.05 t 0.02 0.01 t N o te s : 1 . D u ty fa c to r D = t SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 1 1 / t 2 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 2 1 A 10 A t 1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90390 S11-1044-Rev. C, 30-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRL630S, SiHL630S Vishay Siliconix L VDS VDS Vary tp to obtain required IAS tp VDD Rg D.U.T. + - I AS V DD VDS 5V 0.01 Ω tp IAS EAS , Single Pulse Avalanche Energy (mJ) Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 600 ID 9.0A 5.7A BOTTOM 4.0A TOP 500 400 300 200 100 0 VDD = 50V 25 50 A 75 100 125 150 Starting TJ , Juntion Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 5V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 90390 S11-1044-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRL630S, SiHL630S Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90390. Document Number: 90390 S11-1044-Rev. C, 30-May-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 Revision: 15-Sep-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000