InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register and a timing generator, along with an InGaAs photodiode array, and deliver high sensitivity and stable operation in the near infrared range. The package is hermetically sealed for high reliability and the light input window has an anti-reflective coating to improve the light detection efficiency. The signal processing circuit on the CMOS chip allows selecting two conversion efficiencies (CE) by external voltage. A wide dynamic range can be obtained when the image sensor is operated at CE=16 nV/e-, while a high gain can be obtained at CE=320 nV/e-. Features Applications Wide dynamic range DWDM wavelength monitor Low noise and low dark current Optical spectrum analyzer Two selectable conversion efficiencies Options Anti-saturation circuit CDS circuit*1 InGaAs multichannel detector head C8061-01*3 Offset compensation circuit Multichannel detector head controller C7557-01*3 Simple operation (by built-in timing generator *2) High resolution: 25 μm pitch (512 ch) Low crosstalk 256 ch: 1 video line 512 ch: 2 video lines *1: A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS circuit greatly reduces this reset noise by holding the signal immediately after reset to find the noise differential. *2: In conventional image sensor operation, external PLD (programmable logic device), etc. is used to input the required timing signals. However, the G9201 to G9204 series image sensors internally generate all timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings. *3: The G9203-256D and G9204-512D are not available for the C7557-01. Selection guide Type no. Cooling Image size (mm) G9201-256S G9202-512S G9203-256D*4 G9203-256S G9204-512D*4 G9204-512S One-stage TE-cooled One-stage TE-cooled Non-cooled One-stage TE-cooled Non-cooled One-stage TE-cooled 12.8 × 0.25 12.8 × 0.50 Number of Number of total pixels effective pixels 256 512 256 256 512 512 256 512 256 256 512 512 Spectral response range (μm) 0.9 to 1.67 (-10 °C) 0.9 to 1.67 (-10 °C) 0.9 to 1.7 (25 °C) 0.9 to 1.67 (-10 °C) 0.9 to 1.7 (25 °C) 0.9 to 1.67 (-10 °C) www.hamamatsu.com Appilcable Defective multichannel pixels detector head C8061-01 C8061-01 0 C8061-01 C8061-01 1 InGaAs linear image sensors G9201 to G9204 series Structure Type no. G9201-256S G9202-512S Pixel size [μm (H) × μm (V)] 50 × 250 25 × 250 Pixel pitch (μm) 50 25 50 × 500 50 25 × 500 25 Package Window material 28-pin metal (refer to the dimensional outline) Sapphire glass with anti-reflective coating Borosilicate glass with anti-reflective coating Sapphire glass with anti-reflective coating Borosilicate glass with anti-reflective coating Sapphire glass with anti-reflective coating 22-pin ceramic G9203-256D*4 G9203-256S 28-pin metal (refer to the dimensional outline) 22-pin ceramic G9204-512D*4 G9204-512S 28-pin metal (refer to the dimensional outline) *4: For the G9203-256D and G9204-512D specifications, see the separate datasheet available from HAMAMATSU. Details of photosensitive area (unit: mm) Block diagram CLK RESET V Timing generator Vdd Vss INP Vref Bias generator AD-TRIG Shift register Address switch Readout circuit Charge amp + sample-and-hold circuit CMOS IC VIDEO x H InGaAs photodiode array Number of pixels x H 256 30 50 512 10 25 V 250 Thermoelectric cooler + Thermoelectric cooler - Temperature monitor 500 KMIRC0033EA 250 500 KMIRC0040EA Absolute maximum ratings Parameter Symbol Operating temperature Topr Storage temperature Tstg Supply voltage Clock pulse voltage Reset pulse voltage Gain selection terminal voltage Vdd, INP, Vref Vφ V(RES) Vcsel Condition Chip and package temperature, No dew condensation*5 Chip and package temperature, No dew condensation*5 Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Min. Max. Unit -40 +70 °C -40 +85 °C -0.3 -0.3 -0.3 -0.3 +6 +6 +6 +6 V V V V *5: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. 2 InGaAs linear image sensors G9201 to G9204 series Recommended terminal voltage Parameter Symbol Vdd Vref INP Vss Supply voltage Element bias Ground High Low High Low Clock pulse voltage Reset pulse voltage Vφ V(RES) Min. 4.9 3.5 Vdd - 0.5 0 Vdd - 0.5 0 Typ. 5.0 1.26 4.5 0 Vdd 0 Vdd 0 Max. 5.1 4.6 Vdd + 0.5 0.4 Vdd + 0.5 0.4 Unit V V V V Min. 0.1 0.0125 Vref - Typ. 45 90 f/8 4.5 1.26 Vref Vdd GND Max. 50 100 1 1 4 0.5 INP - Unit V V Electrical characteristics (Ta=25 °C) Parameter Symbol 256 pixels I(Vdd) 512 pixels I(Vref) I(INP) f fV VH VL Vos VtrigH VtrigL Consumption current Clock frequency Video data rate High Low Video output voltage Output offset voltage High Low A/D trigger voltage Spectral response mA mA mA MHz MHz V V V V V Spectral transmittance characteristic of window material (typical example) (Typ.) 1.0 Td=25 °C Td=-10 °C (Ta=25 °C) 100 Transmittance (%) Photosensitivity (A/W) 0.8 0.6 0.4 90 80 0.2 0 0.8 1.0 1.2 1.4 1.6 1.8 70 0.8 1.0 1.2 1.4 1.6 1.8 Wavelength (µm) KMIRB0011EB Wavelength (µm) KMIRB0049EB 3 InGaAs linear image sensors G9201 to G9204 series Linearity error (G9203-256S) 20 (Typ. Td=-10 °C, Vdd=5 V, INP=4.5 V, Vref=1.26 V, CE=16 nV/e-, f=250 kHz) Linearity error (%) 10 0 -10 -20 -30 -40 -50 1 10 100 1000 10000 Output voltage (mV) KMIRB0069EA Electrical and optical characteristics (Td=25 °C) Parameter Peak sensitivity wavelength Photosensitivity Conversion efficiency Saturation voltage Saturation charge Photoresponse nonuniformity Symbol λp S CE Vsat Qsat PRNU RMS noise voltage (readout noise) N Dynamic range Defective pixels*8 D - Condition λ=λp Cf=10pF *6 *7 Standard deviation, Integration count=50 *6 Min. 0.85 3.0 30 - Typ. 1.55 0.95 16 3.2 32 ±2 Max. ±5 Unit μm A/W nV/eV pC % - 180 300 μV rms 10000 - 17777 - 0 % *6: Vφ=5 V, CE=16 nV/e*7: 50 % of saturation, integration time=10 ms, after dark output subtraction, excluding first and last pixels *8: Pixels with photoresponse nonuniformity, readout noise or dark current higher than the maximum value Dark output characteristics (Td=25 °C, CE=16 nV/e-) Parameter Dark output (dark output nonuniformity) Dark current Symbol G9201-256S G9202-512S G9203-256S G9204-512S G9201-256S G9202-512S G9203-256S G9204-512S VD ID Min. -1 -0.5 -2 -0.5 -10 -5 -20 -5 Typ. 0.2 0.1 0.4 0.1 2 1 4 1 Max. 1 0.5 2 0.5 10 5 20 5 Unit V/s pA 4 InGaAs linear image sensors G9201 to G9204 series Equivalent circuit 1 pixel High gain Low gain Shift register Offset compensation circuit CDS VIDEO Photodiode AD-TRIG Timing generator Vdd INP Vss CLK RESET Vref External input KMIRC0010ED KMIRC0010ED Timing chart tr (clk) tf (clk) CLK t1 tr (RES) RESET t2 Blank period (10 clocks or more) tf (RES) Set integration time Actual integration time AD_TRIG Reset Output t3 VIDEO 1 ch readout time 2 ch readout time Last ch readout time KACCC0224EB Parameter Clock pulse frequency Clock pulse width Clock pulse rise/fall times Reset pulse width Reset pulse rise/fall times Reset (rise) timing Reset (fall) timing Output settling time Symbol tpw (clk) tr (clk), tf (clk) tpw (RES) tr (RES), tf (RES) t1 t2 t3 Min. 0.1 100 0 6000 0 50 50 - Typ. 20 20 - Max. 4 100 100 600 Unit MHz ns ns ns ns ns ns ns 5 InGaAs linear image sensors G9201 to G9204 series Basic circuit connection InGaAs linear image sensor CLK Reset Buffer amp Vref Video Vdd Cf_select INP AD_trig Buffer amp Vss KMIRC0012EA Dimensional outline (unit: mm) 63.5 ± 0.15 53.3 ± 0.15 38.1 ± 0.15 2.54 ± 0.15 35.6 ± 0.15 R 1.59 27.2 ± 0.15 15 20.3 ± 0.15 3.0 ± 0.15 10.2 ± 0.15 22.9 ± 0.15 25.4 ± 0.15 28 6.4 ± 1 1.0 ± 0.2 3.4 ± 0.3 5.8 ± 0.2 6.15 ± 0.2 Index mark 2.54 ± 0.15 1 2 14 Active area (left side 1ch) 0.45 ± 0.05 Photosensitive surface Center accuracy of active area: ±0.3 mm or less (with package center as reference point) Rotation accuracy of active area: ±2° or less (with package center as reference point) Chip material: InGaAs Package material: FeNi alloy Lead treatment: Ni/Au plating Lead material: FeNiCo alloy Window material: sapphire Refractive index of window material: n=1.76 Window material thickness: 0.66 mm AR coat: coated (1.55 µm peak) Window sealing method: brazing Cap sealing: welding KMIRA0010EC 6 InGaAs linear image sensors G9201 to G9204 series Pin connections (top view) 256 PIXELS 512 PIXELS Cf SELECT RESET TE - TE + AD-TRIG Vdd Vss INP CLK THERM THERM CASE Cf SELECT RESET-ODD TE - RESET-EVEN TE + AD-TRIG-ODD Vdd Vss INP CLK-ODD AD-TRIG-EVEN THERM THERM CASE CLK-EVEN Vref Vref VIDEO VIDEO-ODD VIDEO-EVEN KMIRC0013EA Terminal name CLK RESET Vdd Vss INP Cf SELECT CASE THERM TE+, TEAD-TRIG VIDEO Vref Input/Output Function and recommended connection Input (CMOS logic compatible) Clock pulse for operating the CMOS shift register Reset pulse for initializing the feedback capacitance in the charge amplifier formed Input (CMOS logic compatible) on the CMOS chip. The width of the reset pulse is integration time. Input Supply voltage for operating the signal processing circuit on the CMOS chip Ground for the signal processing circuit on the CMOS chip Input Reset voltage for the charge amplifier array on the CMOS chip Voltage that determines the feedback capacitance (Cf) on the CMOS chip. Input Low gain (CE=16 nV/e-) at 0 V, and high gain (CE=320 nV/e-) at 5 V. This terminal is electrically connected to the package. Output Thermistor terminal for monitoring temperature inside the package Input Power supply terminal for the thermoelectric cooler that cools the photodiode array Output Digital signal for A/D conversion; positive polarity Output Analog video signal; positive polarity Input Reset voltage for the offset compensation circuit on the CMOS chip Specifications of one-stage TE-cooler (Ta=25 °C, Vdd=5 V, INP=4.5 V) Parameter TE-cooler allowable current TE-cooler allowable voltage Temperature difference *8 Thermistor resistance Thermistor power dissipation Condition Ic=1.4 A Symbol Ic Max. Vc Max. Δt Rth Pth Min. 40 4.85 - Typ. 5.00 - Max. 1.8 5.0 5.15 0.2 Unit A V °C kΩ mW *8: This is a temperature difference between the surface of active area and the heat radiating portion of package. 7 InGaAs linear image sensors G9201 to G9204 series One-stage TE-cooler temperature characteristic (Typ. heatsink 0.5 °C/W) Voltage Temperature difference 60 3.0 50 2.5 40 2.0 30 1.5 20 1.0 10 0.5 0 -10 0 0 1 2 Current (A) Thermistor resistance (Ω) Voltage (V) 3.5 105 70 Temperature difference (°C) 4.0 Thermistor temperature characteristic 104 103 240 250 260 270 280 290 300 Temperature (K) KMIRB0031EC KMIRB0041EB A relation between the thermistor resistance and absolute temperature is expressed by the following equation. R1=R2 × exp B (1/T1 - 1/T2) R1: Resistance at T1 [K] R2: Resistance at T2 [K] B : B constant (B=3200 K ± 2%) Thermistor resistance = 5 kΩ ± 3% (298 K) 8 InGaAs linear image sensors G9201 to G9204 series Connection of related products Shutter* timing pulse AC cable (100 to 240 V included with C7557-01) Trig. POWER Dedicated cable (included with C7557-01) SIGNAL I/O USB cable (included with C7557-01) TE CONTROL I/O Image sensor + Multichannel detector head C7557-01 PC (USB 2.0/3.0) [Windows 7 (32-bit, 64-bit)/ Windows 8 (64-bit)/ Windows 8.1 (64-bit)] * Shutter, etc. are not available. KACCC0402ED Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Image sensors Information described in this material is current as of July, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMIR1012E08 Jul. 2015 DN 9