g9494-256d etc kmir1014e

InGaAs linear image sensors
G9494-256D/-512D
Near infrared image sensors (0.9 to 1.7 μm)
with high-speed data rate
Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object
inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in
pattern recognition systems. The signal processing circuit employs CTIA (Capacitive Trans-Impedance Amplifier) method to
perform simultaneous charge integration on all pixels, so there is no time lag among the pixel output signals.
Features
Applications
High-speed data rate: 2 MHz typ.
Foreign object detection monitors
Selectable conversion gain
Near infrared spectroscopy
Pixel size
G9494-256D: 50 × 50 μm
G9494-512D: 25 × 25 μm
Relatd products
CMOS readout circuit incorporated
Driver circuit for InGaAs linear image sensor
C10820
Low dark current
Room temperature operation
Structure
Parameter
Cooling
Image size
Number of total pixels
Number of effective pixels
Pixel size (H × V)
Pixel pitch
Package
Window material
G9494-256D
G9494-512D
Non-cooled
12.8 × 0.050
12.8 × 0.025
256
512
256
512
50 × 50
25 × 25
50
25
22-pin ceramic DIP (See dimensional outlines.)
Borosilicate glass with anti-reflective coating
www.hamamatsu.com
Unit
mm
pixels
pixels
μm
μm
-
1
InGaAs linear image sensors
Details of photosensitive area (unit: μm)
G9494-256D/-512D
Block diagram
Reset
Vdd
Vss
INP
Vref
Cf_select
V
CLK
Timing generator
x
H
Bias generator
Shift register
Number of pixels
x
256
30
50
50
512
10
25
25
H
AD_trig
Address switch
V
Readout circuit
Charge amp + sample-and-hold circuit
Video
CMOS IC
KMIRC0077EA
InGaAs photodiode array
KMIRC0081EA
Absolute maximum ratings
Parameter
Operating temperature
Storage temperature
Soldering conditions
Supply voltage
Clock pulse voltage
Reset pulse voltage
Gain selection terminal voltage
Symbol
Topr
Tstg
Vdd, INP, Vref
Vφ
V(RES)
Vcsel
Condition
Chip temperature, No dew condensation*1
Chip temperature, No dew condensation*1
Ta=25
Ta=25
Ta=25
Ta=25
°C
°C
°C
°C
Value
-20 to +70
-20 to +85
260 °C, less than five seconds
-0.3 to +6
-0.3 to +6
-0.3 to +6
-0.3 to +6
Unit
°C
°C
V
V
V
V
*1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew
condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and
reliability.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Recommended terminal voltage
Parameter
Symbol
Vdd
Vref
INP
Vss
Supply voltage
Element bias
Ground
Clock pulse voltage
Reset pulse voltage
High
Low
High
Low
Vφ
V(RES)
Min.
4.5
3.3
4.5
4.5
0
Typ.
5
1.26
3.5
0
5.0
0
5.0
0
Max.
5.5
3.6
5.5
0.4
5.5
0.4
Unit
V
V
V
V
V
V
2
InGaAs linear image sensors
G9494-256D/-512D
Electrical characteristics (Ta=25 °C)
Parameter
Current consumption
Clock frequency
Video data rate
High
Low
Video output impedance
Output offset voltage
High
A/D trigger voltage
Low
Video output voltage
A/D trigger drive function
Symbol
I(vdd)
I(Vref)
I(INP)
f
fv
VH
VL
Zv
Vos
VtrigH
VtrigL
Vad
Min.
0.1
74HC244
1 ch
G9494-256D
Typ.
40
2
f
3.5
1.26
5
Vref
Vdd
GND
Max.
75
1
1
4
INP
-
-
-
Min.
0.1
74HC244
1 ch
G9404-512D
Typ.
80
2
f
3.5
1.26
5
Vref
Vdd
GND
Max.
150
1
1
4
INP
-
mA
mA
mA
MHz
MHz
V
V
kΩ
V
V
V
-
-
-
Unit
Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP=3.5 V, Vref=1.26 V, Vf=5 V, CE=1600 nV/e-, f=2 MHz)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Conversion efficiency
Symbol
λ
λp
S
CE
Photoresponse nonuniformity*2
PRNU
Saturation output voltage
Saturation charge
Vsat
Qsat
Readout noise
N
Dynamic range
Defective pixels*3
D
-
Condition
λ=λp
Integration time:
0.2 ms
Integration time:
0.2 ms
Min.
0.85
-
Typ.
0.9 to 1.7
1.55
0.95
1600
Max.
-
Unit
μm
μm
A/W
nV/e-
-
±5
±20
%
-
2
1.25
-
V
Me-
-
900
2000
μV rms
-
2222
-
1
%
*2: 50% of saturation, after dark output subtraction, excluding first and last pixels
*3: Pixels with photoresponse nonuniformity, readout noise or dark current higher than the maximum value
Dark output characteristics (Ta=25 °C, CE=1600 nV/e-)
Parameter
Dark output
(dark output nonuniformity)
Dark current
Min.
G9494-256D
Typ.
Max.
Min.
G9494-512D
Typ.
Max.
VD
-200
40
200
-50
10
50
V/s
ID
-20
4
20
-5
1
5
pA
Symbol
Unit
3
InGaAs linear image sensors
G9494-256D/-512D
Equivalent circuit
1 pixel
Low gain
High gain
Shift register
Offset
compensation
circuit
CDS
Video
Photodiode
AD_trig
Timing generator
Vdd
INP Vss Cf_select
CLK
Reset
Vref
External input
KMIRC0027EA
Connection example
InGaAs linear image sensor
CLK
Reset
Buffer amp
Vref
Video
Vdd
Cf_select
INP
AD_trig
Buffer amp
Vss
KMIRC0012EA
4
InGaAs linear image sensors
G9494-256D/-512D
Timing chart
tr(clk)
tf(clk)
CLK
t1
tr(RES)
Reset
t2
tf(RES)
Integration
time
Integration time
(accuracy)
Blank period
AD_tirg
Video
253 ch 255 ch
252 ch 254 ch 256 ch
1 ch2 ch3 ch4 ch5 ch
KMIRC0025EB
Note: More than 3 μs is required for a blank period from the last pixel to the rising edge of RESET pulse.
Parameter
Clock pulse frequency
Clock pulse width
Clock pulse rise/fall times
Reset pulse width*4
Reset pulse rise/fall times
Clock pulse to start pulse timing
Video delay time
Symbol
tpw(clk)
tr(clk), tf(clk)
tpw(RES)
tr(RES), tf(RES)
t1, t2
tvd
Min.
0.1
100
0
6/f
0
50
100
Typ.
2
20
20
-
Max.
4
100
Unit
MHz
ns
ns
μs
ns
ns
ns
-
100
-
*4: 6 μs or more
Spectral transmittance characteristics of window material
(typical example)
Spectral response
(Typ. Ta=25 °C)
1.0
95
Transmittance (%)
Photosensitivity (A/W)
0.8
0.6
0.4
0.2
0
0.5
(Ta=25 °C)
100
90
85
80
75
1.0
1.5
2.0
Wavelength (μm)
70
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Wavelength (μm)
KMIRB0019EB
KMIRB0083EA
5
InGaAs linear image sensors
G9494-256D/-512D
Photosensitivity temperature characteristics
Noise vs. temperature
(Typ.)
120
2.0
(Typ. Vdd=5 V, INP=3.5 V, Vref=1.26 V, Cf=0.1 pF, Integration time 200 μs, Number of integrations 50)
70 °C
1.5
30 °C
80
Noise (mV rms)
Relative sensitivity (%)
100
-10 °C
60
40
1.0
0.5
20
0
1.52
1.56
1.54
1.58
1.60
1.64
1.62
Wavelength (μm)
0
-20
-10
0
10
20
30
40
50
60
70
Temperature (°C)
KMIRB0020EA
KMIRB0036EA
Dark current vs. temperature
(Typ.)
100 pA
G9494-256D
Dark current
10 pA
1 pA
G9494-512D
100 fA
10 fA
-20
-10
0
10
20
30
40
50
60
70
Temperature (°C)
KMIRB0035EA
6
InGaAs linear image sensors
G9494-256D/-512D
Pin connections
Terminal name
CLK
Input/Output
Input (CMOS logic compatible)
Reset
Input (CMOS logic compatible)
Vdd
Vss
INP
Input
Input
Cf_select
Input
Vref
AD_trig
Video
Input
Output
Output
Conversion efficiency
1600 nV/e160 nV/e-
Function
Clock pulse for operating the CMOS shift register
Reset pulse for initializing the feedback capacitance in the charge amplifier
formed in the CMOS chip. The width of the reset pulse is integration time.
Supply voltage for operating the signal processing circuit in the CMOS chip
Ground for the signal processing circuit in the CMOS chip
Reset voltage for the charge amplifier array in the CMOS chip
Voltage that determines the conversion efficiency in the CMOS chip. High gain
(CE=1600 nV/e-) at 0 V, and low gain (CE=160 nV/e-) at 5 V.
Reset voltage for the offset compensation circuit in the CMOS chip
Digital signal for AD conversion; positive polarity
Analog video signal; positive polarity
Cf-SELECT
Low
High
Low: 0 V (GND), High: 5 V (Vdd)
Dimensional outlines (unit: mm)
G9494-256D
CMOS amp
10.2 ± 0.3
13 12
1.30 ± 0.2
10.1 ± 0.3
22 21
3.0 ± 0.3
2.1 ± 0.5
31.8 ± 0.3
2
Index mark
10 11
Photosensitive area
4.0 ± 1.0
1
0.51 ± 0.2
2.54 ± 0.1
Pin no.
1
2
3
4
5
6
7
8
9
10
11
Lead treatment: Ni/Au plating
Lead material: FeNi alloy
Refractive index of window material: 1.47
Window material thickness: 0.75 ± 0.05
AR coat: coated (1.55 μm peak)
Window sealing method: resin bonding
Center accuracy of photosensitive area: -0.3≤X≤+0.3
-0.5≤Y≤+0.5
Rotation accuracy of photosensitive area: -5°≤θ≤+5°
Pin connection Pin no.
NC
12
NC
13
NC
14
NC
15
NC
16
NC
17
NC
18
NC
19
NC
20
NC
21
NC
22
Pin connection
Video
Vref
CLK
NC
INP
Vss
Vdd
NC
AD_trig
Reset
Cf_select
KMIRA0015EC
7
InGaAs linear image sensors
G9494-256D/-512D
G9494-512D
3.00 ± 0.3
CMOS amp
1.3 ± 0.2
31.8 ± 0.3
2
Index mark
0.51 ± 0.2
Lead treatment: Ni/Au plating
Lead material: FeNi alloy
Refractive index of window material: 1.47
Window material thickness: 0.75 ± 0.05
AR coat: coated (1.55 μm peak)
Window sealing method: resin bonding
Center accuracy of photosensitive area: -0.3≤X≤+0.3
-0.5≤Y≤+0.5
Rotation accuracy of photosensitive area: -5°≤θ≤+5°
10 11
Photosensitive area
4.0 ± 1.0
1
15.2 ± 0.3
13 12
15.1 ± 0.3
22 21
2.54 ± 0.1
Pin no. Pin connection Pin no.
NC
1
12
Reset_even
2
13
AD_trig_even
3
14
NC
4
15
NC
5
16
NC
6
17
NC
7
18
NC
8
19
CLK_even
9
20
NC
10
21
Video_even
11
22
“_even” for even no. pixels
“_odd” for odd no. pixels
Pin connection
Video_odd
Vref
CLK_odd
NC
INP
Vss
Vdd
NC
AD_trig_odd
Reset_odd
Cf_select
KMIRA0016EC
Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic
charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Image sensors
Information described in this material is current as of July, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMIR1014E08 Jul. 2015 DN
8