InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors (0.9 to 1.7 μm) with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in pattern recognition systems. The signal processing circuit employs CTIA (Capacitive Trans-Impedance Amplifier) method to perform simultaneous charge integration on all pixels, so there is no time lag among the pixel output signals. Features Applications High-speed data rate: 2 MHz typ. Foreign object detection monitors Selectable conversion gain Near infrared spectroscopy Pixel size G9494-256D: 50 × 50 μm G9494-512D: 25 × 25 μm Relatd products CMOS readout circuit incorporated Driver circuit for InGaAs linear image sensor C10820 Low dark current Room temperature operation Structure Parameter Cooling Image size Number of total pixels Number of effective pixels Pixel size (H × V) Pixel pitch Package Window material G9494-256D G9494-512D Non-cooled 12.8 × 0.050 12.8 × 0.025 256 512 256 512 50 × 50 25 × 25 50 25 22-pin ceramic DIP (See dimensional outlines.) Borosilicate glass with anti-reflective coating www.hamamatsu.com Unit mm pixels pixels μm μm - 1 InGaAs linear image sensors Details of photosensitive area (unit: μm) G9494-256D/-512D Block diagram Reset Vdd Vss INP Vref Cf_select V CLK Timing generator x H Bias generator Shift register Number of pixels x 256 30 50 50 512 10 25 25 H AD_trig Address switch V Readout circuit Charge amp + sample-and-hold circuit Video CMOS IC KMIRC0077EA InGaAs photodiode array KMIRC0081EA Absolute maximum ratings Parameter Operating temperature Storage temperature Soldering conditions Supply voltage Clock pulse voltage Reset pulse voltage Gain selection terminal voltage Symbol Topr Tstg Vdd, INP, Vref Vφ V(RES) Vcsel Condition Chip temperature, No dew condensation*1 Chip temperature, No dew condensation*1 Ta=25 Ta=25 Ta=25 Ta=25 °C °C °C °C Value -20 to +70 -20 to +85 260 °C, less than five seconds -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 Unit °C °C V V V V *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Recommended terminal voltage Parameter Symbol Vdd Vref INP Vss Supply voltage Element bias Ground Clock pulse voltage Reset pulse voltage High Low High Low Vφ V(RES) Min. 4.5 3.3 4.5 4.5 0 Typ. 5 1.26 3.5 0 5.0 0 5.0 0 Max. 5.5 3.6 5.5 0.4 5.5 0.4 Unit V V V V V V 2 InGaAs linear image sensors G9494-256D/-512D Electrical characteristics (Ta=25 °C) Parameter Current consumption Clock frequency Video data rate High Low Video output impedance Output offset voltage High A/D trigger voltage Low Video output voltage A/D trigger drive function Symbol I(vdd) I(Vref) I(INP) f fv VH VL Zv Vos VtrigH VtrigL Vad Min. 0.1 74HC244 1 ch G9494-256D Typ. 40 2 f 3.5 1.26 5 Vref Vdd GND Max. 75 1 1 4 INP - - - Min. 0.1 74HC244 1 ch G9404-512D Typ. 80 2 f 3.5 1.26 5 Vref Vdd GND Max. 150 1 1 4 INP - mA mA mA MHz MHz V V kΩ V V V - - - Unit Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP=3.5 V, Vref=1.26 V, Vf=5 V, CE=1600 nV/e-, f=2 MHz) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Conversion efficiency Symbol λ λp S CE Photoresponse nonuniformity*2 PRNU Saturation output voltage Saturation charge Vsat Qsat Readout noise N Dynamic range Defective pixels*3 D - Condition λ=λp Integration time: 0.2 ms Integration time: 0.2 ms Min. 0.85 - Typ. 0.9 to 1.7 1.55 0.95 1600 Max. - Unit μm μm A/W nV/e- - ±5 ±20 % - 2 1.25 - V Me- - 900 2000 μV rms - 2222 - 1 % *2: 50% of saturation, after dark output subtraction, excluding first and last pixels *3: Pixels with photoresponse nonuniformity, readout noise or dark current higher than the maximum value Dark output characteristics (Ta=25 °C, CE=1600 nV/e-) Parameter Dark output (dark output nonuniformity) Dark current Min. G9494-256D Typ. Max. Min. G9494-512D Typ. Max. VD -200 40 200 -50 10 50 V/s ID -20 4 20 -5 1 5 pA Symbol Unit 3 InGaAs linear image sensors G9494-256D/-512D Equivalent circuit 1 pixel Low gain High gain Shift register Offset compensation circuit CDS Video Photodiode AD_trig Timing generator Vdd INP Vss Cf_select CLK Reset Vref External input KMIRC0027EA Connection example InGaAs linear image sensor CLK Reset Buffer amp Vref Video Vdd Cf_select INP AD_trig Buffer amp Vss KMIRC0012EA 4 InGaAs linear image sensors G9494-256D/-512D Timing chart tr(clk) tf(clk) CLK t1 tr(RES) Reset t2 tf(RES) Integration time Integration time (accuracy) Blank period AD_tirg Video 253 ch 255 ch 252 ch 254 ch 256 ch 1 ch2 ch3 ch4 ch5 ch KMIRC0025EB Note: More than 3 μs is required for a blank period from the last pixel to the rising edge of RESET pulse. Parameter Clock pulse frequency Clock pulse width Clock pulse rise/fall times Reset pulse width*4 Reset pulse rise/fall times Clock pulse to start pulse timing Video delay time Symbol tpw(clk) tr(clk), tf(clk) tpw(RES) tr(RES), tf(RES) t1, t2 tvd Min. 0.1 100 0 6/f 0 50 100 Typ. 2 20 20 - Max. 4 100 Unit MHz ns ns μs ns ns ns - 100 - *4: 6 μs or more Spectral transmittance characteristics of window material (typical example) Spectral response (Typ. Ta=25 °C) 1.0 95 Transmittance (%) Photosensitivity (A/W) 0.8 0.6 0.4 0.2 0 0.5 (Ta=25 °C) 100 90 85 80 75 1.0 1.5 2.0 Wavelength (μm) 70 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Wavelength (μm) KMIRB0019EB KMIRB0083EA 5 InGaAs linear image sensors G9494-256D/-512D Photosensitivity temperature characteristics Noise vs. temperature (Typ.) 120 2.0 (Typ. Vdd=5 V, INP=3.5 V, Vref=1.26 V, Cf=0.1 pF, Integration time 200 μs, Number of integrations 50) 70 °C 1.5 30 °C 80 Noise (mV rms) Relative sensitivity (%) 100 -10 °C 60 40 1.0 0.5 20 0 1.52 1.56 1.54 1.58 1.60 1.64 1.62 Wavelength (μm) 0 -20 -10 0 10 20 30 40 50 60 70 Temperature (°C) KMIRB0020EA KMIRB0036EA Dark current vs. temperature (Typ.) 100 pA G9494-256D Dark current 10 pA 1 pA G9494-512D 100 fA 10 fA -20 -10 0 10 20 30 40 50 60 70 Temperature (°C) KMIRB0035EA 6 InGaAs linear image sensors G9494-256D/-512D Pin connections Terminal name CLK Input/Output Input (CMOS logic compatible) Reset Input (CMOS logic compatible) Vdd Vss INP Input Input Cf_select Input Vref AD_trig Video Input Output Output Conversion efficiency 1600 nV/e160 nV/e- Function Clock pulse for operating the CMOS shift register Reset pulse for initializing the feedback capacitance in the charge amplifier formed in the CMOS chip. The width of the reset pulse is integration time. Supply voltage for operating the signal processing circuit in the CMOS chip Ground for the signal processing circuit in the CMOS chip Reset voltage for the charge amplifier array in the CMOS chip Voltage that determines the conversion efficiency in the CMOS chip. High gain (CE=1600 nV/e-) at 0 V, and low gain (CE=160 nV/e-) at 5 V. Reset voltage for the offset compensation circuit in the CMOS chip Digital signal for AD conversion; positive polarity Analog video signal; positive polarity Cf-SELECT Low High Low: 0 V (GND), High: 5 V (Vdd) Dimensional outlines (unit: mm) G9494-256D CMOS amp 10.2 ± 0.3 13 12 1.30 ± 0.2 10.1 ± 0.3 22 21 3.0 ± 0.3 2.1 ± 0.5 31.8 ± 0.3 2 Index mark 10 11 Photosensitive area 4.0 ± 1.0 1 0.51 ± 0.2 2.54 ± 0.1 Pin no. 1 2 3 4 5 6 7 8 9 10 11 Lead treatment: Ni/Au plating Lead material: FeNi alloy Refractive index of window material: 1.47 Window material thickness: 0.75 ± 0.05 AR coat: coated (1.55 μm peak) Window sealing method: resin bonding Center accuracy of photosensitive area: -0.3≤X≤+0.3 -0.5≤Y≤+0.5 Rotation accuracy of photosensitive area: -5°≤θ≤+5° Pin connection Pin no. NC 12 NC 13 NC 14 NC 15 NC 16 NC 17 NC 18 NC 19 NC 20 NC 21 NC 22 Pin connection Video Vref CLK NC INP Vss Vdd NC AD_trig Reset Cf_select KMIRA0015EC 7 InGaAs linear image sensors G9494-256D/-512D G9494-512D 3.00 ± 0.3 CMOS amp 1.3 ± 0.2 31.8 ± 0.3 2 Index mark 0.51 ± 0.2 Lead treatment: Ni/Au plating Lead material: FeNi alloy Refractive index of window material: 1.47 Window material thickness: 0.75 ± 0.05 AR coat: coated (1.55 μm peak) Window sealing method: resin bonding Center accuracy of photosensitive area: -0.3≤X≤+0.3 -0.5≤Y≤+0.5 Rotation accuracy of photosensitive area: -5°≤θ≤+5° 10 11 Photosensitive area 4.0 ± 1.0 1 15.2 ± 0.3 13 12 15.1 ± 0.3 22 21 2.54 ± 0.1 Pin no. Pin connection Pin no. NC 1 12 Reset_even 2 13 AD_trig_even 3 14 NC 4 15 NC 5 16 NC 6 17 NC 7 18 NC 8 19 CLK_even 9 20 NC 10 21 Video_even 11 22 “_even” for even no. pixels “_odd” for odd no. pixels Pin connection Video_odd Vref CLK_odd NC INP Vss Vdd NC AD_trig_odd Reset_odd Cf_select KMIRA0016EC Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Image sensors Information described in this material is current as of July, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. 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No. KMIR1014E08 Jul. 2015 DN 8