IMAGE SENSOR InGaAs linear image sensor G9494-256D/-512D Near infrared image sensor (0.9 to 1.7 µm) with high-speed data rate HAMAMATSU provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in pattern recognition systems. The signal processing circuit employs CTIA (Capacitive Transfer Impedance Amplifier) method to perform simultaneous charge integration on all pixels, so there is no time lag among the pixel output signals. Features Applications l High-speed data rate: 2 MHz Typ. l Selectable conversion gain (Cf=0.1 pF, 1 pF) l Pixel size l Foreign object detection monitors l Near infrared spectroscopy G9494-256D: 50 × 50 µm G9494-512D: 25 × 25 µm l CMOS readout circuit incorporated l Low dark current l Room temperature operation ■ S e le c t io n g u id e Typ e N o . G 9 4 9 4 -2 5 6 D G 9 4 9 4 -5 1 2 D C o o lin g N um ber of p ix e ls P ix e l p itc h (µ m ) N o n - c o o le d 256 512 50 25 P ix e l s iz e [µ m (H ) × µ m ( V )] 50 × 50 25 × 25 S p e c tra l re s p o n s e ra n g e (µ m ) D e fe c tiv e p ix e l 0 .9 to 1 .7 (2 5 ° C ) L e s s th a n 1 % ■ A b s o lu te m a x im u m r a tin g s P a ra m e te r S u p p ly v o lta g e C lo c k p u ls e v o lta g e R e s e t p u ls e v o lta g e G a in s e le c tio n te rm in a l v o lta g e O p e ra tin g te m p e ra tu r e * 1 S to ra g e te m p e ra tu r e * 1 * 1 : N o c o n d e n s a tio n S ym bol Vdd Vφ V (R E S ) V c fS E L To p r Ts tg V a lu e -0 .3 to + 6 -0 .3 to + 6 -0 .3 to + 6 -0 .3 to + 6 -2 0 to + 7 0 -2 0 to + 8 5 U n it V V V V °C °C ■ E le c tr ic a l c h a r a c te r is tic s ( Ta = 2 5 ° C ) P a ra m e te r G 9 4 9 4 -2 5 6 D G 9 4 9 4 -5 1 2 D S u p p ly v o lta g e G 9 4 9 4 -2 5 6 D S u p p ly c u rr e n t G 9 4 9 4 -5 1 2 D S u p p ly v o lta g e G ro u n d E le m e n t b ia s C lo c k fr e q u e n c y C lo c k p u ls e v o lta g e H ig h Low V re f IV d d R e s e t p u ls e v o lta g e H ig h Low V (R E S ) H ig h Low tr ( R E S ), tf (R E S ) tp w ( R E S ) VH VL Zv H ig h V trig Low R e s e t p u ls e ris e / fa ll tim e s 2 V id e o o u tp u t v o lta g e V id e o o u tp u t im p e d a n c e A /D tr ig g e r v o lta g e A /D tr ig g e r d r iv e fu n c tio n Vφ tr φ , tf φ tp w φ C lo c k p u ls e ris e / fa ll tim e s C lo c k p u ls e w id th D a ta r a te *2 : 6 µ s o r m o re Vdd IV re f I IN P Vss IN P f S u p p ly c u r re n t R e s e t p u ls e w id th * S ym bol Va d fv M in . 4 .5 4 .5 3 .3 0 .1 4 .5 0 100 4 .5 - Typ . 5 .0 5 .0 1 .2 6 40 80 0 3 .5 2 5 .0 0 20 5 .0 0 M a x. 5 .5 5 .5 75 150 1 1 3 .6 4 5 .5 0 .4 100 5 .5 0 .4 U n it mA mA V V MHz 0 20 100 ns 6 /f 74HC244 1 ch - 3 .5 1 .2 6 5 Vdd GND IN P - µs - - - f - Hz V V mA V ns ns V V kΩ V 1 InGaAs linear image sensor G9494-256D/-512D ■ S pecification (Ta= 25 °C , V dd= 5 V, IN P = 3.5 V, Vref= 1.26 V, C f= 0.1 pF, f= 2 M H z, integration tim e 200 µ s, per 1 elem ent) Parameter Peak sensitivity wavelength Saturation charge Symbol λp Qsat 256 ch 512 ch Dark current Condition Vφ=5 V ID RMS noise voltage (readout noise) Standard deriation Number of integration 50 N Saturation voltage Photo response non uniformity Detective pixel Vsat PRNU - Min. - Typ. 1.55 0.2 4 1 Max. 20 5 Unit µm pC - 900 2000 µV rms - 2 ±5 - ±20 1 V % % ■ Equivalent circuit q ( ) 1 PIXEL Cf=1 pF Cf=0.1 pF SHIFT REGISTER OFFSET COMPENSATION CIRCUIT CDS VIDEO PHOTODIODE AD-TRIG TIMING GENERATOR Vdd INP Vss Cf SELECT CLK RESET Vref EXTERNAL INPUT KMIRC0027EA ■ Basic circuit connection CLK RESET BUFFER AMP Vref VIDEO Vdd Cf SELECT INP AD-TRIG Vss BUFFER AMP KMIRC0012EA 2 pA InGaAs linear image sensor G9494-256D/-512D ■ Timing chart tr (clk) tf (clk) CLK t1 t2 tr (RES) tf (RES) RESET INTEGRATION TIME INTEGRATION TIME (ACCURACY) BLANK PERIOD AD_TIRG VIDEO 1 ch 2 ch 3 ch 4 ch 5 ch 253 ch 255 ch 252 ch 254 ch 256 ch KMIRC0025EB Note) More than 3 µs is required for a blank period from the last pixel to the rising edge of RESET pulse. Parameter Clock pulse frequency Clock pulse width Clock pulse rise / fall times Reset pulse width *3 Reset pulse rise / fall times Clock pulse to start pulse timing Video delay time *3: 6 µs or more Symbol tpw (clk) tr (clk), tf (clk) tpw (RES) tr (RES), tf (RES) t1, t2 tvd ■ Spectral response Min. 0.1 100 0 6/f 0 50 100 Typ. 2 20 20 - Max. 4 100 100 - Unit MHz ns ns µs ns ns ns ■ Photo sensitivity temperature characteristics (Typ. T=25 ˚C) 1.0 (Typ.) 120 RELATIVE SENSITIVITY (%) PHOTO SENSITIVITY (A/W) 70 ˚C 0.5 0 0.5 1.0 1.5 2.0 100 30 ˚C 80 -10 ˚C 60 40 20 0 1.52 1.54 1.56 1.58 1.60 1.62 1.64 WAVELENGTH (µm) WAVELENGTH (µm) KMIRB0019EA KMIRB0020EA 3 InGaAs linear image sensor ■ Noise vs. temperature 2.0 G9494-256D/-512D ■ Dark current vs. temperature (Typ. Vdd=5 V, INP=3.5 V, Vref=1.26 V, Cf=0.1 pF, Integration time 200 µs, Number of integrations 50) (Typ.) 100 pA G9494-256D 10 pA DARK CURRENT NOISE (mV rms) 1.5 1.0 0.5 0 -20 1 pA G9494-512D 100 fA -10 0 10 20 30 40 50 60 10 fA -20 70 TEMPERATURE (˚C) -10 0 10 20 30 40 50 60 70 TEMPERATURE (˚C) KMIRB0036EA KMIRB0035EA ■ Dimensional outlines (unit: mm) G9494-256D 3.0 ± 0.3 0.75 ± 0.08 1.3 ± 0.15 13 12 22 21 10.2 ± 0.25 10.05 ± 0.25 10.45 ± 0.25 2.1 ± 0.5 CMOS AMP 31.75 ± 0.3 4.0 ± 1.0 INDEX MARK 1 2 ACTIVE AREA 10 11 AR COATED BOROSILICATE GLASS 2.54 25.4 ± 0.15 0.95 ± 0.3 Pin No. 1 2 3 4 5 6 7 8 9 10 11 Pin connection NC NC NC NC NC NC NC NC NC NC NC Pin No. 12 13 14 15 16 17 18 19 20 21 22 Pin connection VIDEO Vref CLK NC INP Vss Vdd NC AD-TRIG RESET Cf-SELECT KMIRA0015EB 4 InGaAs linear image sensor G9494-256D/-512D G9494-512D 3.0 ± 0.3 CMOS AMP 15.24 ± 0.25 13 12 15.11 ± 0.25 22 21 15.49 ± 0.25 0.75 ± 0.08 1.3 ± 0.15 31.75 ± 0.3 1 2 +0.3 16.5-0.0 INDEX MARK ACTIVE AREA 10 11 AR COATED BOROSILICATE GLASS 2.54 ± 0.15 0.95 ± 0.3 Pin No. 1 2 3 4 5 6 7 8 9 10 11 Pin connection Pin No. NC 12 RESET-EVEN 13 AD-TRIG-EVEN 14 NC 15 NC 16 NC 17 NC 18 NC 19 CLK-EVEN 20 NC 21 VIDEO-EVEN 22 Pin connection VIDEO-ODD Vref CLK-ODD NC INP Vss Vdd NC AD-TRIG-ODD RESET-ODD Cf-SELECT “-EVEN” FOR EVEN No. PIXELS, “-ODD” FOR ODD No. PIXELS. KMIRA0016EB ■ Pin connection Terminal name CLK Input/Output Input (CMOS logic) RESET Input (CMOS logic) Vdd Vss INP Input Input Cf SELECT Input Vref AD-TRIG VIDEO Input Output Output Function and recommended connection Clock pulse for operating the CMOS shift register Reset pulse for initializing the feedback capacitance in the charge amplifier formed on the CMOS chip. The width of the reset pulse determines integration time. Supply voltage for operating the signal processing circuit on the CMOS chip Ground for the signal processing circuit on the CMOS chip Reset voltage for the charge amplifier array on the CMOS chip Voltage that determines the feedback capacitance (Cf) on the CMOS chip. Cf=0.1 pF at 0 V, and Cf=1 pF at 5 V Reset voltage for the offset compensation circuit at the CMOS chip Digital signal for AD conversion; positive polarity Analog video signal; positive polarity Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMIR1014E04 Feb. 2010 DN 5