InGaAs linear image sensors G9203-256D G9204-512D Near infrared (0.9 to 1.7 μm) image sensors The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low cost is also achieved by using inexpensive ceramic packages. Feedback capacitance for the signal processing circuit formed on the CMOS chip can be selected from 10 pF or 0.5 pF by external voltage. Features Applications Pixel pitch G9203-256D: 50 μm G9204-512D: 25 μm Near infrared spectroscopy Foreign matter detection monitors DWDM monitors Low dark current Room temperature operation Selectable feedback capacitance (Cf): 10 pF or 0.5 pF Structure Parameter Cooling Image size Number of total pixels Number of effective pixels Pixel size (H × V) Pixel pitch Package Window material G9203-256D G9204-512D Non-cooled 12.8 × 0.5 256 512 256 512 50 × 500 25 × 500 50 25 22-pin ceramic DIP (See dimensional outlines.) Borosilicate glass with anti-reflective coating www.hamamatsu.com Unit mm pixels pixels μm μm - 1 InGaAs linear image sensors Details of photosensitive area (unit: μm) G9203-256D, G9204-512D Block diagram Reset CLK V Timing generator Vdd Vss INP Vref Cf_select Bias generator Shift register AD_trig Address switch Readout circuit Charge amp + sample-and-hold circuit Video CMOS IC x H InGaAs photodiode array Type no. G9203-256D G9204-512D x 30 10 H 50 25 V 500 500 KMIRC0081EA KMIRC0080EA Absolute maximum ratings Parameter Symbol Operating temperature Topr Storage temperature Tstg Soldering conditions Supply voltage Clock pulse voltage Reset pulse voltage Gain selection terminal voltage Vdd, INP, Vref Vϕ V(RES) Vcsel Condition Chip temperature, No dew condensation*1 Chip temperature, No dew condensation*1 Ta=25 Ta=25 Ta=25 Ta=25 °C °C °C °C Value Unit -40 to +70 °C -40 to +85 °C 260 °C, heating time: within 5 seconds -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 V V V V *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Recommended terminal voltage Parameter Symbol Vdd Vref INP Vss Supply voltage Element bias Ground Clock pulse voltage Reset pulse voltage High Low High Low Vϕ V(RES) Min. 4.9 3.5 Vdd - 0.5 Vdd - 0.5 0 Typ. 5.0 1.26 4.5 0 Vdd 0 Vdd 0 Max. 5.1 4.6 Vdd + 0.5 0.4 Vdd + 0.5 0.4 Unit V V V V V V 2 InGaAs linear image sensors G9203-256D, G9204-512D Electrical characteristics (Ta=25 °C) Parameter Symbol Current consumption Clock frequency Video data rate Output voltage High Low Output offset voltage Output impedance I(vdd) I(Vref) I(INP) f fV VH VL Vos Zo G9203-256D Typ. 45 f/8 4.5 1.26 Vref 2 Min. 0.1 0.0125 Vref - Max. 50 1 1 4 0.5 INP - Min. 0.1 0.0125 Vref - G9204-512D Typ. 90 f/8 4.5 1.26 Vref 2 Max. 100 1 1 4 0.5 INP - Unit mA mA mA MHz MHz V V V kΩ Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP=4.5 V, Vref=1.26 V, Vf=5 V, CE=16 nV/e-, f=250 kHz) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Conversion efficiency Symbol Photoresponse nonuniformity*2 PRNU Saturation output voltage Saturation charge Vsat Qsat λ λp S CE Readout noise N Dynamic range Defective pixels*3 D - Condition λ=λp Integration time: 10 ms Integration time: 10 ms Min. 0.85 - Typ. 0.9 to 1.7 1.55 0.95 16 Max. - Unit μm μm A/W nV/e- - ±2 ±5 % - 3 187.5 - V Me- - 180 300 μV rms - 16666 - 0 % *2: 50% of saturation, after dark output subtraction, excluding first and last pixels *3: Pixels with photoresponse nonuniformity, readout noise or dark current higher than the maximum value Dark output characteristics (Ta=25 °C, CE=16 nV/e-) Parameter Dark output (dark output nonuniformity) Dark current Min. G9203-256D Typ. Max. Min. G9204-512D Typ. Max. VD -2 0.4 2 -0.5 0.1 0.5 V/s ID -20 4 20 -5 1 5 pA Symbol Unit 3 InGaAs linear image sensors G9203-256D, G9204-512D Equivalent circuit 1 pixel Low gain High gain Shift register Offset compensation circuit CDS Video Photodiode AD_trig Timing generator Vdd INP Vss Cf_select CLK Reset Vref External input KMIRC0027EA Connection example InGaAs linear image sensor CLK Reset Buffer amp Vref Video Vdd Cf_select INP AD_trig Buffer amp Vss KMIRC0012EA 4 InGaAs linear image sensors G9203-256D, G9204-512D Timing chart CLK (input) Reset (input) 8 × N clocks (Readout time) 2 clocks Integration time 8 clocks 8 clocks 1 ch 2 ch 10 clocks min. AD_trig Video (output) tr(clk) (n-1) ch n ch tf(clk) CLK t1 tr(RES) Reset t2 Blank period (10 clocks or more) tf(RES) Integration time Actual integration time AD_trig Reset Output t3 Video Readout time for channel 1 Readout time for channel 2 Readout time for last channel KMIRC0066EB Parameter Clock pulse frequency Clock pulse width Clock pulse rise/fall times Reset pulse width Reset pulse rise/fall times Reset (rise) timing Reset (fall) timing Output settling time Symbol tpw(clk) tr(clk), tf(clk) tpw(RES) tr(RES), tf(RES) t1 t2 t3 Min. 0.1 100 0 6000 0 50 50 - Typ. 20 20 - Max. 4 100 100 600 Unit MHz ns ns ns ns ns ns ns 5 InGaAs linear image sensors G9203-256D, G9204-512D Spectral transmittance characteristics of window material (typical example) Spectral response (Typ. Ta=25 °C) 1.0 95 Transmittance (%) 0.8 Photosensitivity (A/W) (Ta=25 °C) 100 0.6 0.4 0.2 90 85 80 75 0 0.5 70 0.8 2.0 1.5 1.0 1.2 1.0 Wavelength (μm) 1.4 1.6 2.0 1.8 Wavelength (μm) KMIRB0083EA KMIRB0019EB Photosensitivity temperature characteristics Noise vs. temperature (Typ.) 120 0.5 (Typ. date rate: 250 kHz, Cf=10 pF, integration time: 10 ms, number of integrations: 50) 70 °C 0.4 30 °C 80 Noise (mV rms) Relative sensitivity (%) 100 -10 °C 60 40 0.2 0.1 20 0 1.52 0.3 1.54 1.56 1.58 1.60 1.62 1.64 0 -20 -10 0 10 20 30 40 50 60 70 Temperature (°C) Wavelength (μm) KMIRB0020EA KMIRB0017EA 6 InGaAs linear image sensors G9203-256D, G9204-512D Dark current vs. temperature Linearity error (G9204-512S) (Typ.) 100 pA 30 (Ta=25 ˚C, Vdd=5 V, INP=4.5 V, Vref=1.26 V, CE=16 nV/eˉ, f=250 kHz) 20 G9203-256D 1 pA Linearity error (%) Dark current 10 pA G9204-512D 100 fA 10 0 -10 -20 -30 10 fA -20 -40 -10 0 10 20 30 40 50 60 70 1 10 100 1000 10000 Output voltage (mV) Temperature (°C) KMIRB0021EA KMIRB0081EA Pin connections Terminal name CLK Input/Output Input (CMOS logic) Reset Input (CMOS logic) Vdd Vss INP Input Input Cf_select Input Vref AD_trig Video Input Output Output Function Clock pulse for operating the CMOS shift register Reset pulse for initializing the feedback capacitance in the charge amplifier formed in the CMOS chip. The width of the reset pulse determines integration time. Supply voltage for operating the signal processing circuit in the CMOS chip Ground for the signal processing circuit in the CMOS chip Reset voltage for the charge amplifier array in the CMOS chip Voltage that determines the conversion efficiency in the CMOS chip. Low gain (CE=16 nV/e-) at 0 V, and high gain (CE=320 nV/e-) at 5 V. Reset voltage for the offset compensation circuit in the CMOS chip Digital signal for A/D conversion; positive polarity Analog video signal; positive polarity Conversion efficiency Cf-SELECT 16 nV/e- (Cf=10 pF) High 320 nV/e- (Cf=0.5 pF) Low Low: 0 V (GND), High: 5 V (Vdd) 7 InGaAs linear image sensors G9203-256D, G9204-512D Dimensional outlines (unit: mm) G9203-256D CMOS amp 10.2 ± 0.3 13 12 1.30 ± 0.2 10.1 ± 0.3 22 21 3.0 ± 0.3 2.1 ± 0.5 31.8 ± 0.3 2 Index mark 10 11 Photosensitive area 4.0 ± 1.0 1 0.51 ± 0.2 2.54 ± 0.1 Pin no. 1 2 3 4 5 6 7 8 9 10 11 Lead treatment: Ni/Au plating Lead material: FeNi alloy Refractive index of window material: 1.47 Window material thickness: 0.75 ± 0.05 AR coat: coated (1.55 μm peak) Window sealing method: resin bonding Center accuracy of photosensitive area: -0.3≤X≤+0.3 -0.5≤Y≤+0.5 Rotation accuracy of photosensitive area: -5°≤θ≤+5° Pin connection Pin no. NC 12 NC 13 NC 14 NC 15 NC 16 NC 17 NC 18 NC 19 NC 20 NC 21 NC 22 Pin connection Video Vref CLK NC INP Vss Vdd NC AD_trig Reset Cf_select KMIRA0014EB G9204-512D 3.00 ± 0.3 CMOS amp 1.3 ± 0.2 31.8 ± 0.3 2 Index mark 0.51 ± 0.2 Lead treatment: Ni/Au plating Lead material: FeNi alloy Refractive index of window material: 1.47 Window material thickness: 0.75 ± 0.05 AR coat: coated (1.55 μm peak) Window sealing method: resin bonding Center accuracy of photosensitive area: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Rotation accuracy of photosensitive area: -5°≤θ≤+5° 10 11 Photosensitive area 4.0 ± 1.0 1 15.2 ± 0.3 13 12 15.1 ± 0.3 22 21 2.54 ± 0.1 Pin no. Pin connection Pin no. NC 1 12 Reset_even 2 13 AD_trig_even 3 14 NC 4 15 NC 5 16 NC 6 17 NC 7 18 NC 8 19 CLK_even 9 20 NC 10 21 Video_even 11 22 “_even” for even no. pixels “_odd” for odd no. pixels Pin connection Video_odd Vref CLK_odd NC INP Vss Vdd NC AD_trig_odd Reset_odd Cf_select KMIRA0013EC 8 InGaAs linear image sensors G9203-256D, G9204-512D Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Image sensors Information described in this material is current as of July, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. 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No. KMIR1013E06 Jul. 2015 DN 9