CMOS linear image sensors S11637/S12198 series Built-in electronic shutter function and gain switching function The S11637/S12198 series are CMOS linear image sensors with electronic shutter function and gain switching function. The S11637 series has a pixel pitch that is one-half that of our previous type (S10453 series). Features Applications Electronic shutter function Spectrophotometers Gain switching function Image reading Pixel size: S11637 series: 12.5 × 500 μm S12198 series: 25 × 500 μm Readout speed: 10 MHz max. Voltage output type 5 V single power supply operation Simultaneous charge integration for all pixels Built-in timing generator allows operation with only start and clock pulse inputs. Spectral response range: 200 to 1000 nm Structure Parameter Number of total pixels Number of effective pixels Fill factor Pixel pitch Pixel height Photosensitive area length Package Window material*1 *2 S11637-1024Q 1024 1024 S11637-2048Q 2048 2048 S12198-512Q 512 512 S12198-1024Q 1024 1024 100 12.5 25 500 12.8 25.6 12.8 Ceramic Quartz (without AR coating) 25.6 Unit % μm μm mm - *1: Resin sealing *2: Refractive index=1.46 Absolute maximum ratings Parameter Supply voltage Gain selection terminal voltage Clock pulse voltage Start pulse voltage Operating temperature*3 Storage temperature*3 Symbol Vdd Vg V(CLK) V(ST) Topr Tstg Condition Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -5 to +65 -10 to +85 Unit V V V V °C °C *3: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 CMOS linear image sensors S11637/S12198 series Recommended terminal voltage (Ta=25 °C) Parameter Supply voltage High gain Gain selection terminal voltage Low gain High level Clock pulse voltage Low level High level Start pulse voltage Low level Symbol Vdd Min. 4.75 0 Vdd - 0.25 Vdd - 0.25 0 Vdd - 0.25 0 Typ. 5 Vdd Vdd Vdd - Max. 5.25 0.4 Vdd + 0.25 Vdd + 0.25 0.4 Vdd + 0.25 0.4 Unit V V V V V V V Symbol C(Vg) C(CLK) C(ST) Min. - Typ. 5 5 5 Max. - Unit pF pF pF Symbol f(CLK) VR Min. 200 k - Typ. f(CLK) 80 55 95 32 46 Max. 10 M 9487 4812 18450 9487 70 125 40 61 Unit Hz Hz Vg V(CLK) V(ST) Input terminal capacitance Parameter Gain selection input terminal capacitance Clock pulse input terminal capacitance Start pulse input terminal capacitance Electrical characteristics Parameter Clock pulse frequency Video data rate S11637-1024Q S11637-2048Q Line rate S12198-512Q S12198-1024Q Output impedance S11637-1024Q Current S11637-2048Q consumption*4 S12198-512Q S12198-1024Q LR Zo I lines/s Ω mA *4: Ta=25 °C, Vdd=V(ST)=5 V, f(CLK)=10 MHz, dark state 2 CMOS linear image sensors S11637/S12198 series Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=10 MHz] Parameter Spectral response range Peak sensitivity wavelength High gain Photosensitivity*5 Low gain High gain Conversion efficiency*6 Low gain Output offset voltage High gain Saturation charge Low gain High gain Dark output voltage*7 Low gain Dark output nonuniformity*7 *11 Temperature coefficient of dark output Saturation output voltage*8 High gain Saturation exposure Low gain High gain Readout noise Low gain Photoresponse nonuniformity*5 *9 High gain Dynamic range*10 Low gain Symbol λ λp S CE Vo Qsat Vd DSNU ∆Td Vsat Esat Nr PRNU DR Min. 122 31 0.95 0.24 0.3 2.7 - S11637 series Typ. Max. 200 to 1000 600 153 38 1.18 0.30 0.6 0.9 0.45 1.77 50 5 1.4 14 ±200 1.1 3.3 22 86 1.5 2.5 0.7 1.2 ±10 2200 4714 - Min. 152 34 0.45 0.10 0.3 2.7 - S12198 series Typ. Max. 200 to 1000 750 189 42 0.56 0.13 0.6 0.9 0.94 4.19 2.6 26 0.6 6 ±200 1.1 3.3 17 78 1.1 2 0.6 1.1 ±10 3000 5500 - Unit nm nm V/(lx∙s) μV/eV pC mV % times/°C V mlx∙s mV rms % - Measured with a 2856 K tungsten lamp Output voltage generated per one electron Integration time=10 ms Voltage difference from Vo Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using pixels excluding pixels each at both ends, and is defined as follows: PRNU = ΔX/X × 100 [%] X: average output of all pixels, ΔX: difference between X and maximum output or minimum output *10: DR=Vsat/Nr *11: Dark output nonuniformity (DSNU) is the output nonuniformity of dark output voltage. DSNU is measured using pixels excluding pixels each at both ends, and is defined as follows: DSNU = ΔY/Y × 100 [%] Y: average dark output voltage of all pixels, ΔY: difference between Y and maximum dark output voltage or minimum dark output voltage *5: *6: *7: *8: *9: 3 CMOS linear image sensors S11637/S12198 series Spectral response (typical example) Spectral transmittance characteristics of window material (Ta=25 °C) 100 (Typ. Ta=25 °C) 100 S12198 series 80 Transmittance (%) Relative sensitivity (%) 80 60 40 S11637 series 20 60 40 20 0 200 400 600 800 1000 0 200 1200 400 600 800 1000 1200 Wavelength (nm) Wavelength (nm) KMPDB0365EB KMPDB0418EA Block diagram ST CLK 2 3 Vdd 5 8 GND 21 4 Timing generator 11 7 Trig Bias generator Shift register 10 EOS Hold circuit Vg 12 9 Video Charge amp array 1 2 Photodiode array N-1 N KMPDC0411EA 4 CMOS linear image sensors S11637/S12198 series Device structure Details of photosensitive area (front-illuminance type photodiode) [Top view] Pixel height C S11637 series: A=12.5 μm, B=8.5 μm, C=500 μm S12198 series: A=25 μm, B=20 μm, C=500 μm Pixel width B Photodiode Pixel pitch A N-type silicon 400 μm Oxidation silicon 1.0 μm Photodiode 1.0 μm [Cross section] P-type silicon KMPDA0111EA Overall structure Shift register Shift register Shift register Gain amp Buffer amp Video Hold circuit set Hold circuit set Hold circuit set Charge amplifier with gain swithing function PD PD PD 1 pixel KMPDC0521EA 5 CMOS linear image sensors S11637/S12198 series Output waveform examples of one pixel The timing for acquiring the Video signal is synchronized with the rising edge of a trigger pulse (see red arrows below). CLK=10 MHz CLK Trig 5 V/div GND 5 V/div GND 3.9 V (saturation output voltage=3.3 V) 2.2 V (middle output voltage=1.6 V) 1 V/div Video 20 ns/div 0.6 V (output offset voltage) GND CLK=200 kHz CLK Trig 5 V/div GND 5 V/div GND 3.9 V (saturation output voltage=3.3 V) 1 V/div 2.2 V (middle output voltage=1.6 V) Video 1 μs/div 0.6 V (output offset voltage) GND Note: On the waveform of the middle output voltage shown above, in order to make it easier to identify the output of each pixel, the light was input so that the outputs of the adjacent pixels appeared in a step form. 6 CMOS linear image sensors S11637/S12198 series Timing chart 1 2 3 4 28 29 CLK Integration time ST thp(ST) tlp(ST) tpi(ST) 28 clocks 512/1024/2048 1 Video 1 2 3 29 30 Trig EOS tf(CLK) tr(CLK) CLK 1/f(CLK) ST tf(ST) tr(ST) tlp(ST) thp(ST) tpi(ST) KMPDC0395EC Parameter Start pulse cycle Start pulse high period Start pulse low period Start pulse rise and fall times Clock pulse duty ratio Clock pulse rise and fall times Symbol tpi(ST) thp(ST) tlp(ST) tr(ST), tf(ST) - tr(CLK), tf(CLK) Min. 37/f(CLK) 8/f(CLK) 29/f(CLK) 0 45 0 Typ. 10 50 10 Max. 30 55 30 Unit s s s ns % ns Note: Dark output increases if the start pulse high period is lengthened. The internal timing generator starts operation at the rising edge of CLK immediately after ST goes low. The integration time equals the high period of ST. If the first Trig pulse after ST goes low is counted as the first pulse, the Video signal of the first pixel is acquired at the rising edge of the 30th Trig pulse. When the ST pulse is set to low while the shift register is operating, the operation of the shift register is reset and the next shift register operation will start. 7 CMOS linear image sensors S11637/S12198 series Operation examples S11637-1024Q, S12198-1024Q When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized (for outputting signals from all 1024 channels) Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 1054/f(CLK) = 1054/10 MHz = 105.4 μs High period of start pulse = Start pulse cycle - Start pulse’s low period min. = 1054/f(CLK) - 29/f(CLK) = 1054/10 MHz - 29/10 MHz = 102.5 μs Integration time is equal to the high period of start pulse, so it will be 102.5 μs. tlp(ST)=2.9 μs thp(ST)=102.5 μs ST tpi(ST)=105.4 μs KMPDC0396EA S11637-2048Q When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized (for outputting signals from 2048 channels) Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 2078/f(CLK) = 2078/10 MHz = 207.8 μs High period of start pulse = Start pulse cycle - Start pulse’s low period min. = 2078/f(CLK) - 29/f(CLK) = 2078/10 MHz - 29/10 MHz = 204.9 μs Integration time is equal to the high period of start pulse, so it will be 204.9 μs. tlp(ST)=2.9 μs thp(ST)=204.9 μs ST tpi(ST)=207.8 μs KMPDC0397EA S12198-512Q When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized (for outputting signals from all 512 channels) Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 542/f(CLK) = 542/10 MHz = 54.2 μs High period of start pulse = Start pulse cycle - Start pulse’s low period min. = 542/f(CLK) - 29/f(CLK) = 542/10 MHz - 29/10 MHz = 51.3 μs Integration time is equal to the high period of start pulse, so it will be 51.3 μs. tlp(ST)=2.9 μs thp(ST)=51.3 μs ST tpi(ST)=54.2 μs KMPDC0499EA 8 CMOS linear image sensors S11637/S12198 series Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.2) S11637-1024Q 1.4 ± 0.2*2 1.35 ± 0.2*3 6.505 ± 0.3 (6.295) 0.5 ± 0.05*4 12 1 1 ch 11 Direction of scan Angle accuracy of effective pixels: ±2° Lead treatment: Ni/Au plating Lead material: FeNi alloy Weight: 3 g *1: Distance from pin center to phtosensitive area center *2: Distance from package bottom to photosensitive surface *3: Distance from upper surface of window to photosensitive surface *4: Window thickness 5.0 ± 0.5 0.51 ± 0.05 2.54 ± 0.13 25.4 ± 0.13 Photosensitive surface 0.25 10.05 ± 0.25 22 3.0 ± 0.3 Index mark 31.75 ± 0.3 10.16 ± 0.25 4.0 ± 0.2*1 Photosensitive area 12.8 × 0.5 KMPDA0289EB S11637-2048Q 1.4 ± 0.2*2 40.64 ± 0.41 (12.695) 1 11 Direction of scan 3.0 ± 0.3 Index mark 1 ch Photosensitive surface 12 10.03 ± 0.25 22 0.5 ± 0.05*4 10.16 ± 0.25 4.0 ± 0.2*1 12.905 ± 0.3 1.35 ± 0.2*3 0.25 Photosensitive area 25.6 × 0.5 2.54 ± 0.13 25.4 ± 0.13 5.0 ± 0.5 0.51 ± 0.05 Angle accuracy of effective pixels: ±2° Lead treatment: Ni/Au plating Lead material: FeNi alloy Weight: 3.6 g *1: Distance from pin center to phtosensitive area center *2: Distance from package bottom to photosensitive surface *3: Distance from upper surface of window to photosensitive surface *4: Window thickness KMPDA0290EB 9 CMOS linear image sensors S11637/S12198 series S12198-512Q 1.4 ± 0.2*2 6.85 ± 0.3 (5.95) 4.7 ± 0.2*1 0.5 ± 0.05*4 12 1 1 ch 11 Direction of scan 5.0 ± 0.5 0.51 ± 0.05 2.54 ± 0.13 25.4 ± 0.13 Photosensitive surface 0.25 10.05 ± 0.25 22 3.0 ± 0.3 Index mark 1.35 ± 0.2*3 31.75 ± 0.30 10.16 ± 0.25 Photosensitive area 12.8 × 0.5 Angle accuracy of effective pixels: ±2° Lead treatment: Ni/Au plating Lead material: FeNi alloy Weight: 3 g *1: Distance from pin center to phtosensitive area center *2: Distance from package bottom to photosensitive surface *3: Distance from upper surface of window to photosensitive surface *4: Window thickness KMPDA0311EA S12198-1024Q 1.4 ± 0.2*2 1.35 ± 0.2*3 0.5 ± 0.05*4 (12.35) 22 12 1 11 Index mark 1 ch Direction of scan 3.0 ± 0.3 10.05 ± 0.25 4.7 ± 0.2*1 13.25 ± 0.3 2.54 ± 0.13 25.4 ± 0.13 5.0 ± 0.5 0.51 ± 0.05 Photosensitive surface 10.16 ± 0.25 40.64 ± 0.41 0.25 Photosensitive area 25.6 × 0.5 Angle accuracy of effective pixels: ±2° Lead treatment: Ni/Au plating Lead material: FeNi alloy Weight: 3.6 g *1: Distance from pin center to phtosensitive area center *2: Distance from package bottom to photosensitive surface *3: Distance from upper surface of window to photosensitive surface *4: Window thickness KMPDA0312EA 10 CMOS linear image sensors S11637/S12198 series Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Symbol NC ST CLK GND Vdd NC Trig Vdd Video EOS GND Vg NC NC NC NC NC NC NC NC Vdd NC I/O Pin name No connection Start pulse Clock pulse Ground Supply voltage No connection Trigger pulse for video signal acquisition Supply voltage Video output End of scan Ground Gain selection terminal voltage No connection No connection No connection No connection No connection No connection No connection No connection Supply voltage No connection I I I O I O O I I Note: Leave the "NC" terminals open and do not connect them to GND. Connect a buffer amplifier for impedance conversion to the video output terminal so as to minimize the current flow. Application circuit example +5 V 0.1 μF +22 μF /25 V + +5 V 0.1 μF + 22 μF /25 V NC NC ST Vdd CLK NC GND NC Vdd NC NC NC Trig NC Vdd NC Video NC EOS NC GND Vg 82 Ω ST CLK 82 Ω 74HC541 +5 V S11637/S12198 series 0.1 μF +6 V 0.1 μF +22 μF/25 V 100 Ω LT1818 + - Vg 51 Ω Video 22 pF 0.1 μF +22 μF /25 V + -6 V + 22 μF /25 V EOS Trig 74HC541 KMPD KMPDC0494EA 11 CMOS linear image sensors S11637/S12198 series Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Light input window If dust or dirt gets on the light input window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth dry cotton swab, or the like, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Operate and store the product within the temperature range defined by the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (5) UV exposure This device is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV exposure to the device. Also, be careful not to allow UV light to strike the sealed portion of the glass. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice Image sensors Information described in this material is current as of June, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1131E01 Jun. 2015 DN 12