g11608 series kmir1020e

InGaAs linear image sensors
G11608 series
Wide spectral response range, near infrared
image sensors (0.5 to 1.7 μm)
The G11608 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry.
The G11608 series consists of an InGaAs photodiode array with enhanced sensitivity at shorter wavelengths, and CMOS
chip that contains a charge amplifier array, a shift register, and a timing generator. The charge amplifier array is made up
of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge
integration mode to achieve high sensitivity and stable operation.
The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the
external voltage to meet the application.
Features
Applications
Wide spectral response range (0.5 to 1.7 μm)
Near infrared multichannel spectrophotometry
Low noise
Radiation thermometry
Two selectable conversion efficiencies
Non-destructive inspection
Anti-saturation circuit
CDS (correlated double sampling) circuit*1
Built-in thermistor
Simple operation (by built-in timing generator)*2
High resolution: 25 μm pitch (G11608-512DA)
*1: A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS (correlated
double sampling) circuit greatly reduces this reset noise by holding the signal immediately after reset to find the noise differential.
*2: Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external
PLDs (programmable logic device) are used to input the required timing signals. However, the G11608 series image sensors internally generate all timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings.
Selection guide
Type no.
G11608-256DA
G11608-512DA
Cooling
Image area
(mm)
Non-cooled
12.8 × 0.50
Number of total
pixels
256
512
Number of effective
pixels
256
512
Applicable driver
circuit
C11513-01
Structure
Type no.
G11608-256DA
G11608-512DA
Pixel size
[μm (H) × μm (V)]
50 × 500
25 × 500
Pixel pitch
(μm)
50
25
Package
Window material
22-pin ceramic
Borosilicate glass without
anti-reflective coating
www.hamamatsu.com
1
InGaAs linear image sensors
G11608 series
V
Details of photosensitive area (unit: μm)
x
H
Number of pixels
x
H
V
256
30
50
500
512
10
25
500
KMIRC0057EA
Block diagram
CLK
RESET
Timing generator
Vdd
Vss
INP PDN Vinp Fvref Cf_select
Bias generator
AD_sp
AD_trig
Shift register
Address switch
Readout circuit
Charge amplifier + sample-and-hold circuit
CMOS IC
Video
InGaAs photodiode array
Temperature monitor
KMIRC0058EA
2
InGaAs linear image sensors
G11608 series
Absolute maximum ratings
Parameter
Supply voltage
Clock pulse voltage
Reset pulse voltage
Gain selection terminal voltage
Operating temperature*3
Storage temperature*3
Soldering conditions
Thermistor power disspation
Symbol
Vdd, INP, Fvref
Vinp, PDN
Vϕ
V(RES)
Vcfsel
Topr
Tstg
Pth
Condition
Min.
Typ.
Max.
Unit
Ta=25 °C
-0.3
-
+6
V
Ta=25 °C
Ta=25 °C
Ta=25 °C
Non dew condensation
Non dew condensation
-0.3
-0.3
-0.3
-10
-20
260 °C or less, within 5 s
-
+6
+6
+6
+60
+70
V
V
V
°C
°C
mW
-
400
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
*3: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
Recommended terminal voltage (Ta=25 °C)
Parameter
Supply voltage
Differential reference voltage
Video line reset voltage
Input stage amplifier reference
voltage
Photodiode cathode voltage
Ground
High
Clock pulse voltage
Low
High
Reset pulse voltage
Low
Symbol
Vdd
Fvref
Vinp
Min.
4.7
1.1
3.9
Typ.
5.0
1.2
4.0
Max.
5.3
1.3
4.1
Unit
V
V
V
INP
3.9
4.0
4.1
V
PDN
GND
3.9
4.7
0
4.7
0
4.0
0
5.0
0
5.0
0
4.1
5.3
0.4
5.3
0.3
V
V
Min.
Typ.
Max.
Unit
0.1
0.1
9.0
-
45
85
1
f
4.0
1.2
Fvref
5
Vdd
GND
10.0
3950
80
120
1
1
1
1
5
5
11.0
-
Vϕ
V(RES)
V
V
Electrical characteristics (Ta=25 °C)
Parameter
G11608-512DA
G11608-256DA
Consumption
current
Operation frequency
Video data rate
Video output voltage
High
Low
Output offset voltage
Output impedance
AD_trig, AD_sp pulse High
voltage
Low
Thermistor resistance
Thermistor B constant*4
Symbol
I(Vdd)
Ifvref
Ivinp
Iinp
Ipdn
fop
DR
VH
VL
Vos
Zo
Vtrig, Vsp
Rth
B
mA
mA
mA
mA
mA
MHz
MHz
V
V
V
kΩ
V
kΩ
K
*4: T1=25 °C, T2=50 °C
3
InGaAs linear image sensors
G11608 series
Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, Vϕ=5 V, f=1 MHz)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Conversion efficiency*
5
Symbol
λ
λp
S
CE
Photoresponse nonuniformity*6
PRNU
Saturation charge
Qsat
Saturation voltage
G11608-256DA
Dark output
G11608-512DA
G11608-256DA
Dark current
G11608-512DA
Temperature coefficient of dark
output (dark current)
Vsat
λ=λp
Cf=10 pF
Cf=1 pF
CE=16 nV/eCE=160 nV/e-
Min.
0.8
168
16.8
2.7
-1
-0.5
-10
-5
Typ.
0.5 to 1.7
1.55
1.0
16
160
±3
175
17.5
2.8
±0.1
±0.05
±1
±0.5
Max.
±5
1
0.5
10
5
VD
CE=16 nV/e-
ID
CE=16 nV/e-
-
CE=16 nV/e-
-
1.1
-
CE=16 nV/eCE=160 nV/eCE=16 nV/eCE=16 nV/e-
6750
-
200
300
14000
-
400
500
1
Readout noise*7
N
Dynamic range
Defective pixels*8
D
*5:
*6:
*7:
*8:
Condition
-
Unit
μm
μm
A/W
nV/e%
MeV
V/s
pA
times/°C
μVrms
%
Refer to pin connection when changing conversion efficiency.
50% of saturation, integration time 10 ms, after dark output subtraction, excluding first and last pixels
Integration time=10 ms (CE=16nV/e-), 1 ms (CE=160 nV/e-)
Pixels with photoresponse nonuniformity, readout noise, or dark current higher than the maximum value
Equivalent circuit
PDN
Cf_select
S/H
VIDEO
INP
Fvref
Photodiode array
Charge amplifier array
CMOS readout circuit
KMIRC0049EA
4
InGaAs linear image sensors
G11608 series
Timing chart (each video line)
CLK
RESET
Integration time (setting)
5 CLK
Blank
Integration time (actual)
5 CLK
AD_sp
AD_trig
256 CLK
VIDEO
1
tf(clk)
CLK
2
255 256
tr(clk)
tpw(clk)
tr(res)
tf(res)
RESET
KMIRC0065EA
tpw(res)
KMIRC0065EA
Parameter
Clock pulse width
Clock pulse rise/fall times
High
Reset pulse width
Low
Reset pulse rise/fall times
Symbol
tpw(clk)
tr(clk), tf(clk)
tpw(res)
tr(res), tf(res)
Min.
60
0
6
284
0
Typ.
500
20
20
Max.
5000
30
30
Unit
ns
ns
clocks
ns
5
InGaAs linear image sensors
G11608 series
Connection example
CLK
Pulse
generator
AD_sp
Buffer amp
RESET
AD_trig
Controller
Buffer amp
Cf_select 1
ADC
Cf_select 2
INP
PDN
Supply
voltage
Vinp
Fvref
Vdd
VIDEO
Buffer amp
GND
KMIRC0056EB
Spectral response (typical example)
Spectral transmittance characteristic of window material (typical example)
(Ta=25 °C)
1.2
(Ta=25 °C)
100
90
80
Transmittance (%)
Photosensitivity (A/W)
1.0
0.8
0.6
0.4
70
60
50
40
30
20
0.2
10
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Wavelength (μm)
0
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Wavelength (μm)
KMIRB0057EC
KMIRB0058EA
6
InGaAs linear image sensors
G11608 series
Linearity error
20
(Td=25 ˚C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, f=1 MHz, CE=16 nV/eˉ)
15
Linearity error (%)
10
5
0
-5
-10
-15
-20
1
10
100
1000
10000
Output voltage (mV)
KMIRB0091EA
Temperature characteristics of thermistor
(Typ.)
Thermistor resistance (kΩ)
1000
100
10
1
-10
(Typ.)
Temperature Thermistor resistance
(°C)
(kΩ)
-10
53.0
-5
41.2
0
32.1
5
25.1
10
19.8
15
15.7
20
12.5
25
10.0
30
8.06
35
6.53
40
5.32
45
4.36
50
3.59
55
2.97
60
2.47
0
10
20
30
40
50
60
Temperature (°C)
KMIRB0059EA
7
InGaAs linear image sensors
G11608 series
Dimensional outline (unit: mm)
Dimensional outlin (G11608 series, unit: mm)
3.0 ± 0.3
31.8 ± 0.35
Thermistor
0.75 ± 0.05
(Window)
23.0 ± 0.3
1 ch
256 or
512 ch
Window
10 11
Photosensitive area
3.0 ± 0.3
1 2
Index mark
0.51 ± 0.05
25.4 ± 0.15
2.54 ± 0.15
0.25 ± 0.05
20.0 ± 0.35
Photosensitive
surface
25.4 ± 0.3
13 12
4±1
25.7 ± 0.3
25.3 ± 0.3
22 21
1.3 ± 0.15
Pin no. G11608-256DA G11608-512DA
NC
AD_sp_EVEN
1
NC
RESET_EVEN
2
NC
AD_trig_EVEN
3
NC
NC
4
Cf_select2
Cf_select2
5
Cf_select1
Cf_select1
6
Thermistor
Thermistor
7
Thermistor
Thermistor
8
NC
CLK_EVEN
9
Fvref
Fvref
10
NC
VIDEO_EVEN
11
VIDEO
VIDEO_ODD
12
Vinp
Vinp
13
CLK
CLK_ODD
14
PDN*
PDN*
15
INP*
INP*
16
GND
GND
17
Vdd
Vdd
18
NC
NC
19
AD_trig
AD_trig_ODD
20
RESET
RESET_ODD
21
AD_sp
AD_sp_ODD
22
Chip material: InGaAs
Package material: ceramic
Lead treatment: Ni/Au plating
Lead material: FeNi alloy
Window material: borosilicate glass
Reflective index of window material:
nd=1.47
* PDN and INP should be at the same potential.
Window material thickness:
It is recommended to use the same power
0.75 ± 0.05 mm
source and short between their pins
AR coat: none
Window sealing method:
resin adhesion
Position accuracy of photosensitive area center:
±0.3 (with respect to package center)
Rotation accuracy of photosensitive area:
±5 ° (with respect to package center)
KMIRA0024EB
KMIRA0024EB
Pin connections
Terminal name
Input/Output
PDN
Input
AD_sp
Cf_select1, 2
Thermistor
AD_trig
Output
Input*8
Output
Output
RESET
Input
CLK
Input
INP
Input
Vinp
Input
Fvref
Input
VIDEO
Vdd
GND
Output
Input
Input
Function and recommended connection
Remark
Cathode bias terminal for InGaAs photodiode. This should be at the same potential
4.0 V
as INP.
Digital start signal for A/D conversion
0 to 5 V
Signal for selecting feedback capacitance (integration capacitance) on CMOS chip
0 V or 5 V
Thermistor for minitoring temperature inside the package
Sampling synchronous signal for A/D conversion
0 to 5 V
Reset pulse for initializing the feedback capacitance in the charge amplifier formed in
0 to 5 V
the CMOS chip. Integration time is determined by the high period of this pulse.
Clock pulse for operating the CMOS shift register
0 to 5 V
Input stage amplifier reference voltage. Supply voltage for operating the signal
4.0 V
processing circuit in the CMOS chip. This should be at the same potential as PDN.
Video line reset voltage. Supply voltage for operating the signal processing circuit in
4.0 V
the CMOS chip.
Differential amplifier reference voltage. Supply voltage for operating the signal
1.2 V
processing circuit in the CMOS chip.
Differential amplifier output. Analog video signal.
1.2 to 3.0 V
Supply voltage for operating the signal processing circuit in the CMOS chip (+5 V)
5V
Grand for the signal processing circuit in the CMOS chip (0 V)
0V
*8: Conversion efficiency is determined by supply voltage to the Cf_select terminals as shown below.
Conversion efficiency
16 nV/e- (Cf=10 pF)
160 nV/e- (Cf=1 pF)
Cf_select1
High
High
Cf_select2
High
Low
Low: 0 V (GND), High: 5 V(Vdd)
8
InGaAs linear image sensors
G11608 series
Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic
charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Image sensors
Information described in this material is current as of March, 2016.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
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China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMIR1020E03 Mar. 2016 DN
9