g11620 series kmir1019e

InGaAs linear image sensors
G11620 series
(non-cooled type)
Single video line (128/256/512 pixels)
near infrared image sensor (0.95 to 1.7 μm)
The G11620 series is an InGaAs linear image sensor designed for near-infrared multichannel spectrophotometry. The CMOS
chip includes a charge amplifier, a shift register, and a timing generator circuit. Unlike conventional InGaAs linear image sensors that incorporate two CMOS signal processing chips, the G11620 series uses only one CMOS chip by bump-connecting
it to the InGaAs photodiode array. This structure reduces a difference in the video output that usually occurs between oddnumber pixels and even-number pixels.
The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array.
Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the wide
spectral range.
The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the
external voltage to meet the application.
Features
Applications
Low noise, low dark current
Near infrared multichannel spectrophotometry
Two selectable conversion efficiencies
Radiation thermometry
Anti-saturation circuit
Non-destructive inspection
CDS circuit*1
Built-in thermistor
Simple operation (by built-in timing generator)*2
High resolution: 25 μm pitch (G11620-256DF/-512DA)
*1: A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS (correlated
double sampling) circuit greatly reduces this reset noise by holding the signal immediately after reset to find the noise differential.
*2: Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external
PLDs (programmable logic device) are used to input the required timing signals. However, the image sensors internally generate all
timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings.
Selection guide
Type no.
G11620-128DA
G11620-256DF
G11620-256DA
G11620-512DA
Cooling
Image size
(mm)
Number of total pixels
6.4 × 0.5
Non-cooled
12.8 × 0.5
128
256
256
512
Number of effective
pixels
128
256
256
512
Applicable driver
circuit
C11513
Structure
Type no.
G11620-128DA
G11620-256DF
G11620-256DA
G11620-512DA
Pixel size
[μm (H) × μm (V)]
50 × 500
25 × 500
50 × 500
25 × 500
Pixel pitch
(μm)
50
25
50
25
Package
Window material
22-pin ceramic
(refer to the dimensional
outline)
Borosilicate glass with
anti-reflective coating
www.hamamatsu.com
1
InGaAs linear image sensors
G11620 series (non-cooled type)
V
Details of photosensitive area (unit: μm)
x
H
Type no.
x
H
V
G11620-128DA
G11620-256DA
30
50
500
G11620-256DF
G11620-512DA
10
25
500
KMIRC0086EA
Block diagram (G11620-512DA)
CMOS chip
Shift
register
.....
CLK
RESET
Charge
amplifier
Timing generator
.....
Shift
register
AD_sp
.....
InGaAs
chip
.....
VIDEO
CMOS readout circuit
.....
AD_trig
KMIRC0048EA
2
InGaAs linear image sensors
G11620 series (non-cooled type)
Absolute maximum ratings
Parameter
Supply voltage
Clock pulse voltage
Reset pulse voltage
Gain selection terminal voltage
Operating temperature
Storage temperature
Soldering conditions
Thermistor power disspation
Symbol
Vdd, INP, Fvref
Vinp, PDN
Vϕ
V(RES)
Vcfsel
Topr
Tstg
Pd_th
Condition
Min.
Typ.
Max.
Unit
Ta=25 °C
-0.3
-
+6
V
Ta=25 °C
Ta=25 °C
Ta=25 °C
No dew condensation*3
No dew condensation*3
-0.3
-0.3
-0.3
-10
-20
Ta=25 °C
-
+6
+6
+6
+60
+70
260 °C or less, within 5 s
400
V
V
V
°C
°C
mW
*3: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is
exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maximum ratings.
Recommended terminal voltage (Ta=25 °C)
Parameter
Supply voltage
Differential reference voltage
Video line reset voltage
Input stage amplifier reference voltage
Photodiode cathode voltage
Ground
High
Clock pulse voltage
Low
High
Reset pulse voltage
Low
Symbol
Vdd
Fvref
Vinp
INP
PDN
Vss
Vϕ
V(RES)
Min.
4.7
1.1
3.9
3.9
3.9
4.7
0
4.7
0
Typ.
5.0
1.2
4.0
4.0
4.0
0
5.0
0
5.0
0
Max.
5.3
1.3
4.1
4.1
4.1
5.3
0.4
5.3
0.3
Unit
V
V
V
V
V
V
Min.
0.1
0.1
9.0
-
Typ.
35
50
55
80
1
f
4.0
1.2
Fvref
5
Vdd
GND
10.0
3950
Max.
60
80
80
100
1
1
1
1
5
5
11.0
-
Unit
V
V
Electrical characteristics (Ta=25 °C)
Parameter
Consumption current
Clock frequency
Video data rate
Video output voltage
High
Low
Output offset voltage
Output impedance
AD_trig, AD_sp pulse voltage
Thermistor resistance
Thermistor B constant*4
High
Low
Symbol
G11620-128DA
G11620-256DF
I(Vdd)
G11620-256DA
G11620-512DA
Ifvref
Ivinp
Iinp
Ipdn
f
DR
VH
VL
Vos
Zo
Vtrig, Vsp
Rth
B
mA
MHz
MHz
V
V
kΩ
V
kΩ
K
*4: T1=25 °C, T2=50 °C
3
InGaAs linear image sensors
G11620 series (non-cooled type)
Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, Vϕ=5 V, f=1 MHz)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Photo response non-uniformity*6
PRNU
Saturation charge
Qsat
Saturation voltage
Dark output
Dark current
Temperature coefficient of dark output
(dark current)
Vsat
VD
ID
CE=16 nV/eCE=16 nV/e-
Min.
1.45
0.7
168
16.8
2.7
-
-
CE=16 nV/e-
-
1.1
-
times/°C
CE=16 nV/eCE=160 nV/eCE=16 nV/eCE=16 nV/e-
6750
-
200
300
14000
-
400
500
μV rms
Conversion efficiency*5
Symbol
λ
λp
S
CE
Readout noise*7
N
Dynamic range
Defective pixels*8
D
-
*5:
*6:
*7:
*8:
Condition
λ=λp
Cf=10 pF
Cf=1 pF
CE=16 nV/eCE=160 nV/e-
Typ.
0.95 to 1.7
1.55
0.82
16
160
±5
175
17.5
2.8
±0.05
±0.5
Max.
1.65
±10
±0.5
±5
-
1
Unit
μm
μm
A/W
nV/e%
MeV
V/s
pA
%
Refer to pin connection when changing conversion efficiency.
50% of saturation, integration time 10 ms, after dark output subtraction, excluding first and last pixels
Integration time=10 ms (CE=16nV/e-), 1 ms (CE=160 nV/e-)
Pixels with photo response non-uniformity, readout noise, or dark current higher than the maximum value
4
InGaAs linear image sensors
G11620 series (non-cooled type)
Equivalent circuit
G11620-128DA/256DA
PDN
Cf_select
S/H
VIDEO
INP
Fvref
Photodiode array
Charge amplifier array
CMOS readout circuit
KMIRC0049EA
G11620-256DF/512DA
Cf_select
PDN
S/H
VIDEO
Odd
pixels
Even
pixels
INP
Fvref
Odd pixels
Cf_select
S/H
INP
Even pixels
Photodiode array
Charge amplifier array
CMOS readout circuit
KMIRC0054EA
5
InGaAs linear image sensors
G11620 series (non-cooled type)
Timing chart
CLK
RESET
Integration time (setting)
5 CLK
Blank
Integration time (actual)
5 CLK
AD_sp
AD_trig
n × CLK
VIDEO
1
tf(clk)
CLK
2
n-1 n
tr(clk)
Note:
n=number of channels
tpw(clk)
tr(res)
tf(res)
RESET
tpw(res)
KMIRC0055EB
Parameter
Clock pulse frequency
Clock pulse width
Clock pulse rise/fall times
High
Reset pulse width
Low
Reset pulse rise/fall times
Symbol
f
tpw(clk)
tr(clk), tf(clk)
tpw(res)
tr(res), tf(res)
Min.
0.1
60
0
6
“Number of pixels” + 28
0
Typ.
1
500
20
20
Max.
5
5000
30
30
Unit
MHz
ns
ns
clocks
ns
6
InGaAs linear image sensors
G11620 series (non-cooled type)
Connection example
CLK
Pulse
generator
AD_sp
Buffer amp
RESET
AD_trig
Controller
Buffer amp
Cf_select 1
ADC
Cf_select 2
INP
PDN
Supply
voltage
Vinp
Fvref
Vdd
VIDEO
Buffer amp
GND
KMIRC0056EB
Spectral response (typical example)
Spectral transmittance characteristic of window material (typical example)
(Ta=25 °C)
1.0
95
Transmittance (%)
Photo sensitivity (A/W)
0.8
0.6
0.4
0.2
0
0.8
(Ta=25 °C)
100
90
85
80
75
1.0
1.2
1.4
1.6
1.8
70
0.8
1.0
1.2
1.4
1.6
1.8
Wavelength (μm)
Wavelength (μm)
KMIRB0051EB
KMIRB0090EA
7
InGaAs linear image sensors
G11620 series (non-cooled type)
Linearity error
20
(Td=25 ˚C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, f=1 MHz, CE=16 nV/eˉ)
15
Linearity error (%)
10
5
0
-5
-10
-15
-20
1
10
100
1000
10000
Output voltage (mV)
KMIRB0091EA
Temperature characteristic of thermistor
(Typ.)
1000
Thermistor resistance (kΩ)
Temperature
(°C)
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
100
10
1
-40 -30 -20 -10
0
10
20
30
40
50
60
Thermistor
resistance
(kΩ)
281
208
155
117
88.8
68.4
53.0
41.2
32.1
25.1
19.8
15.7
Temperature
(°C)
20
25
30
35
40
45
50
55
60
65
70
Thermistor
resistance
(kΩ)
12.5
10.0
8.06
6.53
5.32
4.36
3.59
2.97
2.47
2.07
1.74
70
Temperature (°C)
KMIRB0061EA
8
InGaAs linear image sensors
G11620 series (non-cooled type)
Dimensional outlines (unit: mm)
G11620-128DA/256DF
Thermistor
31.8 ± 0.3
3.0 ± 0.3
16.8 ± 0.3
22 21
1.7 ± 0.2
13 12
1
2
10 11
Index mark
15.24 ± 0.3
Photosensitive
surface
4±1
3.0 ± 0.3
Photosensitive
surface
1.7 ± 0.2
Photosensitive area (left side 1 ch)
0.25 ± 0.05
15.5 ± 0.3
13.2 ± 0.3
15.1 ± 0.3
Window
2.54 ± 0.15
0.51 ± 0.05
25.4 ± 0.15
Pin no.
Function
Pin no.
Function
1
NC
12
VIDEO
2
NC
13
Vinp
3
NC
14
CLK
4
NC
15
PDN*
5
Cf_select 2
16
INP*
6
Cf_select 1
17
GND
7
Thermistor
18
Vdd
8
Thermistor
19
NC
9
NC
20
AD_trig
10
Fvref
21
RESET
11
NC
22
AD_sp
Chip material: InGaAs
Package material: ceramic
Lead treatment: Ni/Au plating
Lead material: FeNi alloy
Reflective index of window material: nd=1.47
Window material thickness: 0.75 ± 0.05
AR-coated
Window sealing method: resin adhesion
Position accuracy of photosensitive area center:
-0.3≤X≤+0.3
-0.3≤Y≤+0.3
* PDN and INP should be at the same potential.
When supplying voltage to PDN and INP,
it is recommended to use the same power
source and short between their pins.
KMIRA0030EB
9
InGaAs linear image sensors
G11620 series (non-cooled type)
G11620-256DA/512DA
31.8 ± 0.3
3.0 ± 0.3
Thermistor
23.2 ± 0.3
22 21
1.7 ± 0.2
13 12
1
2
10 11
Index mark
15.24 ± 0.3
Photosensitive
surface
4±1
3.0 ± 0.3
Photosensitive
surface
1.7 ± 0.2
Photosensitive area (left side 1 ch)
0.25 ± 0.05
15.5 ± 0.3
13.2 ± 0.3
15.1 ± 0.3
Window
2.54 ± 0.15
0.51 ± 0.05
25.4 ± 0.15
Pin no.
Function
Pin no.
Function
1
NC
12
VIDEO
2
NC
13
Vinp
3
NC
14
CLK
4
NC
15
PDN*
5
Cf_select 2
16
INP*
6
Cf_select 1
17
GND
7
Thermistor
18
Vdd
8
Thermistor
19
NC
9
NC
20
AD_trig
10
Fvref
21
RESET
11
NC
22
AD_sp
Chip material: InGaAs
Package material: ceramic
Lead treatment: Ni/Au plating
Lead material: FeNi alloy
Reflective index of window material: nd=1.47
Window material thickness: 0.75 ± 0.05
AR-coated
Window sealing method: resin adhesion
Position accuracy of photosensitive area center:
-0.3≤X≤+0.3
-0.3≤Y≤+0.3
* PDN and INP should be at the same potential.
When supplying voltage to PDN and INP,
it is recommended to use the same power
source and short between their pins.
KMIRA0023ED
10
InGaAs linear image sensors
G11620 series (non-cooled type)
Pin connections
Terminal name Input/Output
PDN
Input
AD_sp
Cf_select1, 2
Thermistor
AD_trig
Output
Input*9
Output
Output
RESET
Input
CLK
Input
INP
Input
Vinp
Input
Fvref
Input
VIDEO
Vdd
GND
Output
Input
Input
Function and recommended connection
Cathode bias terminal for InGaAs photodiode. This should be at the same potential
as INP.
Digital start signal for A/D conversion
Signal for selecting feedback capacitance (integration capacitance) on CMOS chip
Thermistor for monitoring temperature inside the package
Sampling synchronous signal for A/D conversion
Reset pulse for initializing the feedback capacitance in the charge amplifier formed in
the CMOS chip. Integration time is determined by the high period of this pulse.
Clock pulse for operating the CMOS shift register
Input stage amplifier reference voltage. Supply voltage for operating the signal
processing circuit in the CMOS chip. This should be at the same potential as PDN.
Video line reset voltage. Supply voltage for operating the signal processing circuit in
the CMOS chip.
Differential amplifier reference voltage. Supply voltage for operating the signal
processing circuit in the CMOS chip.
Differential amplifier output. Analog video signal.
Supply voltage for operating the signal processing circuit in the CMOS chip (+5 V)
Grand for the signal processing circuit in the CMOS chip (0 V)
Remark
4.0 V
0 to 5 V
0 V or 5 V
0 to 5 V
0 to 5 V
0 to 5 V
4.0 V
4.0 V
1.2 V
1.2 to 4.0 V
5V
0V
*9: Conversion efficiency is determined by supply voltage to the Cf_select terminals as shown below.
Conversion efficiency
16 nV/e- (Low gain)
160 nV/e- (High gain)
Cf_select1
High
High
Cf_select2
High
Low
Low: 0 V (GND), High: 5 V(Vdd)
Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic
charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Image sensors
Information described in this material is current as of July, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
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China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMIR1019E06 Jul. 2015 DN
11