InGaAs linear image sensors G11620 series (non-cooled type) Single video line (128/256/512 pixels) near infrared image sensor (0.95 to 1.7 μm) The G11620 series is an InGaAs linear image sensor designed for near-infrared multichannel spectrophotometry. The CMOS chip includes a charge amplifier, a shift register, and a timing generator circuit. Unlike conventional InGaAs linear image sensors that incorporate two CMOS signal processing chips, the G11620 series uses only one CMOS chip by bump-connecting it to the InGaAs photodiode array. This structure reduces a difference in the video output that usually occurs between oddnumber pixels and even-number pixels. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the wide spectral range. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application. Features Applications Low noise, low dark current Near infrared multichannel spectrophotometry Two selectable conversion efficiencies Radiation thermometry Anti-saturation circuit Non-destructive inspection CDS circuit*1 Built-in thermistor Simple operation (by built-in timing generator)*2 High resolution: 25 μm pitch (G11620-256DF/-512DA) *1: A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS (correlated double sampling) circuit greatly reduces this reset noise by holding the signal immediately after reset to find the noise differential. *2: Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external PLDs (programmable logic device) are used to input the required timing signals. However, the image sensors internally generate all timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings. Selection guide Type no. G11620-128DA G11620-256DF G11620-256DA G11620-512DA Cooling Image size (mm) Number of total pixels 6.4 × 0.5 Non-cooled 12.8 × 0.5 128 256 256 512 Number of effective pixels 128 256 256 512 Applicable driver circuit C11513 Structure Type no. G11620-128DA G11620-256DF G11620-256DA G11620-512DA Pixel size [μm (H) × μm (V)] 50 × 500 25 × 500 50 × 500 25 × 500 Pixel pitch (μm) 50 25 50 25 Package Window material 22-pin ceramic (refer to the dimensional outline) Borosilicate glass with anti-reflective coating www.hamamatsu.com 1 InGaAs linear image sensors G11620 series (non-cooled type) V Details of photosensitive area (unit: μm) x H Type no. x H V G11620-128DA G11620-256DA 30 50 500 G11620-256DF G11620-512DA 10 25 500 KMIRC0086EA Block diagram (G11620-512DA) CMOS chip Shift register ..... CLK RESET Charge amplifier Timing generator ..... Shift register AD_sp ..... InGaAs chip ..... VIDEO CMOS readout circuit ..... AD_trig KMIRC0048EA 2 InGaAs linear image sensors G11620 series (non-cooled type) Absolute maximum ratings Parameter Supply voltage Clock pulse voltage Reset pulse voltage Gain selection terminal voltage Operating temperature Storage temperature Soldering conditions Thermistor power disspation Symbol Vdd, INP, Fvref Vinp, PDN Vϕ V(RES) Vcfsel Topr Tstg Pd_th Condition Min. Typ. Max. Unit Ta=25 °C -0.3 - +6 V Ta=25 °C Ta=25 °C Ta=25 °C No dew condensation*3 No dew condensation*3 -0.3 -0.3 -0.3 -10 -20 Ta=25 °C - +6 +6 +6 +60 +70 260 °C or less, within 5 s 400 V V V °C °C mW *3: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maximum ratings. Recommended terminal voltage (Ta=25 °C) Parameter Supply voltage Differential reference voltage Video line reset voltage Input stage amplifier reference voltage Photodiode cathode voltage Ground High Clock pulse voltage Low High Reset pulse voltage Low Symbol Vdd Fvref Vinp INP PDN Vss Vϕ V(RES) Min. 4.7 1.1 3.9 3.9 3.9 4.7 0 4.7 0 Typ. 5.0 1.2 4.0 4.0 4.0 0 5.0 0 5.0 0 Max. 5.3 1.3 4.1 4.1 4.1 5.3 0.4 5.3 0.3 Unit V V V V V V Min. 0.1 0.1 9.0 - Typ. 35 50 55 80 1 f 4.0 1.2 Fvref 5 Vdd GND 10.0 3950 Max. 60 80 80 100 1 1 1 1 5 5 11.0 - Unit V V Electrical characteristics (Ta=25 °C) Parameter Consumption current Clock frequency Video data rate Video output voltage High Low Output offset voltage Output impedance AD_trig, AD_sp pulse voltage Thermistor resistance Thermistor B constant*4 High Low Symbol G11620-128DA G11620-256DF I(Vdd) G11620-256DA G11620-512DA Ifvref Ivinp Iinp Ipdn f DR VH VL Vos Zo Vtrig, Vsp Rth B mA MHz MHz V V kΩ V kΩ K *4: T1=25 °C, T2=50 °C 3 InGaAs linear image sensors G11620 series (non-cooled type) Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, Vϕ=5 V, f=1 MHz) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Photo response non-uniformity*6 PRNU Saturation charge Qsat Saturation voltage Dark output Dark current Temperature coefficient of dark output (dark current) Vsat VD ID CE=16 nV/eCE=16 nV/e- Min. 1.45 0.7 168 16.8 2.7 - - CE=16 nV/e- - 1.1 - times/°C CE=16 nV/eCE=160 nV/eCE=16 nV/eCE=16 nV/e- 6750 - 200 300 14000 - 400 500 μV rms Conversion efficiency*5 Symbol λ λp S CE Readout noise*7 N Dynamic range Defective pixels*8 D - *5: *6: *7: *8: Condition λ=λp Cf=10 pF Cf=1 pF CE=16 nV/eCE=160 nV/e- Typ. 0.95 to 1.7 1.55 0.82 16 160 ±5 175 17.5 2.8 ±0.05 ±0.5 Max. 1.65 ±10 ±0.5 ±5 - 1 Unit μm μm A/W nV/e% MeV V/s pA % Refer to pin connection when changing conversion efficiency. 50% of saturation, integration time 10 ms, after dark output subtraction, excluding first and last pixels Integration time=10 ms (CE=16nV/e-), 1 ms (CE=160 nV/e-) Pixels with photo response non-uniformity, readout noise, or dark current higher than the maximum value 4 InGaAs linear image sensors G11620 series (non-cooled type) Equivalent circuit G11620-128DA/256DA PDN Cf_select S/H VIDEO INP Fvref Photodiode array Charge amplifier array CMOS readout circuit KMIRC0049EA G11620-256DF/512DA Cf_select PDN S/H VIDEO Odd pixels Even pixels INP Fvref Odd pixels Cf_select S/H INP Even pixels Photodiode array Charge amplifier array CMOS readout circuit KMIRC0054EA 5 InGaAs linear image sensors G11620 series (non-cooled type) Timing chart CLK RESET Integration time (setting) 5 CLK Blank Integration time (actual) 5 CLK AD_sp AD_trig n × CLK VIDEO 1 tf(clk) CLK 2 n-1 n tr(clk) Note: n=number of channels tpw(clk) tr(res) tf(res) RESET tpw(res) KMIRC0055EB Parameter Clock pulse frequency Clock pulse width Clock pulse rise/fall times High Reset pulse width Low Reset pulse rise/fall times Symbol f tpw(clk) tr(clk), tf(clk) tpw(res) tr(res), tf(res) Min. 0.1 60 0 6 “Number of pixels” + 28 0 Typ. 1 500 20 20 Max. 5 5000 30 30 Unit MHz ns ns clocks ns 6 InGaAs linear image sensors G11620 series (non-cooled type) Connection example CLK Pulse generator AD_sp Buffer amp RESET AD_trig Controller Buffer amp Cf_select 1 ADC Cf_select 2 INP PDN Supply voltage Vinp Fvref Vdd VIDEO Buffer amp GND KMIRC0056EB Spectral response (typical example) Spectral transmittance characteristic of window material (typical example) (Ta=25 °C) 1.0 95 Transmittance (%) Photo sensitivity (A/W) 0.8 0.6 0.4 0.2 0 0.8 (Ta=25 °C) 100 90 85 80 75 1.0 1.2 1.4 1.6 1.8 70 0.8 1.0 1.2 1.4 1.6 1.8 Wavelength (μm) Wavelength (μm) KMIRB0051EB KMIRB0090EA 7 InGaAs linear image sensors G11620 series (non-cooled type) Linearity error 20 (Td=25 ˚C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, f=1 MHz, CE=16 nV/eˉ) 15 Linearity error (%) 10 5 0 -5 -10 -15 -20 1 10 100 1000 10000 Output voltage (mV) KMIRB0091EA Temperature characteristic of thermistor (Typ.) 1000 Thermistor resistance (kΩ) Temperature (°C) -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 100 10 1 -40 -30 -20 -10 0 10 20 30 40 50 60 Thermistor resistance (kΩ) 281 208 155 117 88.8 68.4 53.0 41.2 32.1 25.1 19.8 15.7 Temperature (°C) 20 25 30 35 40 45 50 55 60 65 70 Thermistor resistance (kΩ) 12.5 10.0 8.06 6.53 5.32 4.36 3.59 2.97 2.47 2.07 1.74 70 Temperature (°C) KMIRB0061EA 8 InGaAs linear image sensors G11620 series (non-cooled type) Dimensional outlines (unit: mm) G11620-128DA/256DF Thermistor 31.8 ± 0.3 3.0 ± 0.3 16.8 ± 0.3 22 21 1.7 ± 0.2 13 12 1 2 10 11 Index mark 15.24 ± 0.3 Photosensitive surface 4±1 3.0 ± 0.3 Photosensitive surface 1.7 ± 0.2 Photosensitive area (left side 1 ch) 0.25 ± 0.05 15.5 ± 0.3 13.2 ± 0.3 15.1 ± 0.3 Window 2.54 ± 0.15 0.51 ± 0.05 25.4 ± 0.15 Pin no. Function Pin no. Function 1 NC 12 VIDEO 2 NC 13 Vinp 3 NC 14 CLK 4 NC 15 PDN* 5 Cf_select 2 16 INP* 6 Cf_select 1 17 GND 7 Thermistor 18 Vdd 8 Thermistor 19 NC 9 NC 20 AD_trig 10 Fvref 21 RESET 11 NC 22 AD_sp Chip material: InGaAs Package material: ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Reflective index of window material: nd=1.47 Window material thickness: 0.75 ± 0.05 AR-coated Window sealing method: resin adhesion Position accuracy of photosensitive area center: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 * PDN and INP should be at the same potential. When supplying voltage to PDN and INP, it is recommended to use the same power source and short between their pins. KMIRA0030EB 9 InGaAs linear image sensors G11620 series (non-cooled type) G11620-256DA/512DA 31.8 ± 0.3 3.0 ± 0.3 Thermistor 23.2 ± 0.3 22 21 1.7 ± 0.2 13 12 1 2 10 11 Index mark 15.24 ± 0.3 Photosensitive surface 4±1 3.0 ± 0.3 Photosensitive surface 1.7 ± 0.2 Photosensitive area (left side 1 ch) 0.25 ± 0.05 15.5 ± 0.3 13.2 ± 0.3 15.1 ± 0.3 Window 2.54 ± 0.15 0.51 ± 0.05 25.4 ± 0.15 Pin no. Function Pin no. Function 1 NC 12 VIDEO 2 NC 13 Vinp 3 NC 14 CLK 4 NC 15 PDN* 5 Cf_select 2 16 INP* 6 Cf_select 1 17 GND 7 Thermistor 18 Vdd 8 Thermistor 19 NC 9 NC 20 AD_trig 10 Fvref 21 RESET 11 NC 22 AD_sp Chip material: InGaAs Package material: ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Reflective index of window material: nd=1.47 Window material thickness: 0.75 ± 0.05 AR-coated Window sealing method: resin adhesion Position accuracy of photosensitive area center: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 * PDN and INP should be at the same potential. When supplying voltage to PDN and INP, it is recommended to use the same power source and short between their pins. KMIRA0023ED 10 InGaAs linear image sensors G11620 series (non-cooled type) Pin connections Terminal name Input/Output PDN Input AD_sp Cf_select1, 2 Thermistor AD_trig Output Input*9 Output Output RESET Input CLK Input INP Input Vinp Input Fvref Input VIDEO Vdd GND Output Input Input Function and recommended connection Cathode bias terminal for InGaAs photodiode. This should be at the same potential as INP. Digital start signal for A/D conversion Signal for selecting feedback capacitance (integration capacitance) on CMOS chip Thermistor for monitoring temperature inside the package Sampling synchronous signal for A/D conversion Reset pulse for initializing the feedback capacitance in the charge amplifier formed in the CMOS chip. Integration time is determined by the high period of this pulse. Clock pulse for operating the CMOS shift register Input stage amplifier reference voltage. Supply voltage for operating the signal processing circuit in the CMOS chip. This should be at the same potential as PDN. Video line reset voltage. Supply voltage for operating the signal processing circuit in the CMOS chip. Differential amplifier reference voltage. Supply voltage for operating the signal processing circuit in the CMOS chip. Differential amplifier output. Analog video signal. Supply voltage for operating the signal processing circuit in the CMOS chip (+5 V) Grand for the signal processing circuit in the CMOS chip (0 V) Remark 4.0 V 0 to 5 V 0 V or 5 V 0 to 5 V 0 to 5 V 0 to 5 V 4.0 V 4.0 V 1.2 V 1.2 to 4.0 V 5V 0V *9: Conversion efficiency is determined by supply voltage to the Cf_select terminals as shown below. Conversion efficiency 16 nV/e- (Low gain) 160 nV/e- (High gain) Cf_select1 High High Cf_select2 High Low Low: 0 V (GND), High: 5 V(Vdd) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Image sensors Information described in this material is current as of July, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. 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No. KMIR1019E06 Jul. 2015 DN 11