Datasheet - Hamamatsu Photonics

InGaAs linear image sensors
G11135-256DD, G11135-512DE
Single video line (256/512 pixels)
near infrared image sensor (0.95 to 1.7 μm)
The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors
consist of an InGaAs photodiode array and CMOS chip that contains a charge amplifier array, an offset compensation circuit,
a shift register, and a timing generator. The InGaAs photodiode array and the CMOS chip are electrically connected by indium
bumps.
The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array.
Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near
infrared spectral range.
The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application.
Features
Applications
Single video line (256/512 pixels)
Foreign object screening
High-speed data rate: 5 MHz max.
Agricultural product inspection
Choice of two conversion efficiency levels
Pixel size: G11135-256DD (50 × 50 μm)
G11135-512DE (25 × 25 μm)
Related products
Built-in temperature sensor
Driver circuit for InGaAs liner image sensor
C11514
Small variations in dark output between pixels
Room temperature operation
General ratings
Parameter
Cooling
Number of total pixels
Number of effective pixels
Image size
Pixel size
Pixel pitch
Package
Window material
G11135-256DD
G11135-512DE
Non-cooled
256
512
256
512
12.8 × 0.05
12.8 × 0.025
50 × 50
25 × 25
50
25
22-pin ceramic (refer to the dimensional outline)
Borosilicate glass with anti-reflective coating
Unit
pixels
pixels
mm
μm (H) × μm (V)
μm
-
Cross sectional image
InGaAs photodiode array
CMOS chip
Bump
Window
Wire bonding
KMIRC0053EA
www.hamamatsu.com
1
InGaAs linear image sensors
G11135-256DD, G11135-512DE
Block diagram (G11135-512DE)
CMOS chip
Shift
register
.....
CLK
RESET
Charge
amplifier
Timing generator
VIDEO
CMOS readout circuit
.....
.....
InGaAs
chip
.....
Shift
register
AD_sp
.....
AD_trig
KMIRC0048EA
Absolute maximum ratings
Parameter
Supply voltage
Clock voltage
Reset pulse voltage
Gain selection terminal voltage
Operating temperature
Storage temperature
Soldering conditions
Thermistor power dissipation
Symbol
Vdd, INP,
Fvref, Vinp,
PDN
Vɸ
V(RES)
Vcfsel
Topr
Tstg
Pd_th
Condition
Value
Unit
Ta=25 °C
-0.3 to +6.0
V
Ta=25 °C
Ta=25 °C
Ta=25 °C
-0.3 to +6.0
-0.3 to +6.0
-0.3 to +6.0
-10 to +60
-20 to +70
260 °C or less, within 5 s
400 max.
V
V
V
°C
°C
mW
Ta=25 °C
Note: This product must be used within the range of the absolute maximum ratings. Product quality may suffer if any item of the
absolute maximum ratings is exceeded even momentarily.
Recommended terminal voltage
Parameter
Supply voltage
Differential reference voltage
Video line reset voltage
Input stage amplifier reference voltage
Pixel voltage
High
Clock pulse voltage
Low
High
Reset pulse voltage
Low
Symbol
Vdd
Fvref
Vinp
INP
PDN
Vɸ
RESET
Min.
4.7
1.1
3.9
3.9
3.9
4.7
4.7
-
Typ.
5.0
1.2
4.0
4.0
4.0
5
0
5
0
Max.
5.3
1.3
4.1
4.1
4.1
5.3
0.4
5.3
0.3
Unit
V
V
V
V
V
V
V
2
InGaAs linear image sensors
G11135-256DD, G11135-512DE
Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP, Vinp, PDN=4 V, Fvref=1.2 V, f=5 MHz)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Symbol
λ
λp
S
Conversion efficiency*1
CE
Saturation charge*2
Saturation voltage*2
Photoresponse nonuniformity*3
Average dark output*4
Dark output nonuniformity*4
Readout noise*4
Dynamic range
Defective pixels*5
*1:
*2:
*3:
*4:
*5:
Condition
λ=λp
High gain
Low gain
Qsat
Vsat
PRNU
VDmean
DSNU
N
D
-
Min.
1.45
0.7
2.3
1.05
1200
-
Typ.
0.95 to 1.7
1.55
0.82
930
160
2.8
2.6
±5
1.25
±3
1
2600
-
Max.
1.65
-
Unit
μm
μm
A/W
-
nV/e-
±10
1.45
±10
2
1
MeV
%
V
mV
mV rms
%
Cf_select=0 V (high gain), 5 V (low gain)
High gain, integration time 500 μs
High gain, 50% of saturation, after dark output subtraction, excluding first and last pixels, integration time 200 μs
High gain, integration time 200 μs
Pixels with photoresponse nonuniformity, readout noise, or dark output nonuniformity higher than the maximum value
Electrical characteristics (Ta=25 °C)
Parameter
Supply current
Symbol
256 ch
512 ch
Differential reference current
Video line reset voltage
Input stage amplifier reference current
Pixel voltage
High
Output voltage
Low
Clock frequency
Output impedance
Data rate
High
A/D trigger,
A/D start pulse voltage
Low
Thermistor resistance
Thermistor B constant*6
lvdd
Ifvref
Ivinp
I(INP)
I(PDN)
VIDEO
f
Zo
DR
Vtrg,Vsp
Rth
B
Min.
0.1
0.1
-
Typ.
50
75
3.85
1.25
5
f
Vdd
GND
10
3950
Max.
75
100
1
1
1
1
5
5
-
Unit
mA
mA
mA
mA
mA
V
MHz
kΩ
MHz
V
kΩ
K
*6: T1=25 °C, T2=50 °C
3
InGaAs linear image sensors
G11135-256DD, G11135-512DE
Equivalent circuit
G11135-256DD
PDN
Cf_select
S/H
VIDEO
INP
Fvref
Photodiode array
Charge amplifier array
CMOS readout circuit
KMIRC0049EA
G11135-512DE
Cf_select
PDN
S/H
VIDEO
Odd
pixels
Even
pixels
INP
Fvref
Odd pixels
Cf_select
S/H
INP
Even pixels
Photodiode array
Charge amplifier array
CMOS readout circuit
KMIRC0054EA
4
InGaAs linear image sensors
G11135-256DD, G11135-512DE
Connection example
Pulse
generator
CLK
AD_sp
Reset
AD_trig
Controller
Buffer amp
Buffer amp
Cf_select
ADC
INP
Supply
voltage
PDN
Vinp
Fvref
Vdd
GND
Video
Buffer amp
KMIRC0051EA
5
InGaAs linear image sensors
G11135-256DD, G11135-512DE
Timing chart (G11135-512DE)
,
)
6 CLK
4 CLK 8 μs
CLK
Reset
Integration time (setting)
5 CLK
5 CLK
Blank
Integration time (actual)
AD_sp
AD_trig
512 CLK
Video
1
2
511 512
Integration time (actual) = Integration time (setting) - 8 μs + 1 CLK
tf(clk)
CLK
tr(clk)
tpw(clk)
tr(res)
tf(res)
Reset
KMIRC0
tpw(res)
KMIRC0050EC
Parameter
Clock pulse frequency
Clock pulse width
Clock pulse rise/fall times
Reset pulse width
Reset pulse rise/fall times
Symbol
f
tpw(clk)
tr(clk), tf(clk)
High
Low
tpw(res)
tr(res), tf(res)
Min.
0.1
60
0
*7
Number of channels + 12
0
Typ.
100
20
20
Max.
5
30
-*8
30
Unit
MHz
ns
ns
clock
ns
*7: (5 CLK + 8 μs) or (18 μs -1 CLK), whichever is longer.
*8: 1.008 ms - 1 CLK
6
InGaAs linear image sensors
G11135-256DD, G11135-512DE
Spectral response
(Ta=25 °C)
1.0
Photo sensitivity (A/W)
0.8
0.6
0.4
0.2
0
0.8
1.2
1.0
1.4
1.6
1.8
Wavelength (μm)
KMIRB0051EB
Temperature characteristics of thermistor
(Typ.)
Thermistor resistance (kΩ)
1000
100
10
1
-10
(Typ.)
Temperature Thermistor resistance
(°C)
(kΩ)
-10
53.0
-5
41.2
0
32.1
5
25.1
10
19.8
15
15.7
20
12.5
25
10.0
30
8.06
35
6.53
40
5.32
45
4.36
50
3.59
55
2.97
60
2.47
0
10
20
30
40
50
60
Temperature (°C)
KMIRB0059EA
7
InGaAs linear image sensors
G11135-256DD, G11135-512DE
Pin connections
Terminal name
PDN
AD_sp
Cf_select
Thermistor
AD_trig
Input/Output
Input
Output
Input*9
Output
Output
RESET
Input
CLK
Input
INP
Input
Vinp
Input
Fvref
Input
VIDEO
Vdd
GND
Output
Input
Input
Function and recommended connection
Cathode bias terminal for InGaAs photodiode
Digital start signal for A/D conversion
Signal for selecting feedback capacitance (integration capacitance) on CMOS chip
Thermistor for monitoring temparature inside the package
Sampling synchronous signal for A/D conversion
Reset pulse for initializing the feedback capacitance in the charge amplifier
formed in the CMOS chip. Integration time is determined by the high period of
this pulse.
Clock pulse for operating the CMOS shift register
Input stage amplifier reference voltage. Supply voltage for operating the signal
processing circuit in the CMOS chip.
Video line reset voltage. Supply voltage for operating the signal processing
circuit in the CMOS chip.
Differential amplifier reference voltage. Supply voltage for operating the signal
processing circuit in the CMOS chip.
Differential amplifier output. Analog video signal.
Supply voltage for operating the signal processing circuit in the CMOS chip (+5 V)
Grand for the signal processing circuit in the CMOS chip (0 V)
Remark
4.0 V
0 to 5 V
0 V or 5 V
0 to 5 V
0 to 5 V
0 to 5 V
4.0 V
4.0 V
1.2 V
1.25 to 3.85 V
5V
0V
*9: Conversion efficiency is determined by supply voltage to the Cf_select terminals as shown below.
Conversion efficiency
160 nV/e930 nV/e-
Cf_select
High
Low
Low: 0 V (GND), High: 5 V (Vdd)
8
InGaAs linear image sensors
G11135-256DD, G11135-512DE
Dimensional outline (unit: mm)
31.8 ± 0.3
Thermistor
13 12
1
10 11
15.5 ± 0.3
22 21
13.2 ± 0.3
15.1 ± 0.3
23.2 ± 0.3
2
Index mark
4±1
3.0 ± 0.3
Photosensitive
surface
1.7 ± 0.2
Photosensitive area (left side 1 ch)
2.54 ± 0.15
Pin no. Function Pin no. Function
1
NC
12
Video
2
NC
13
Vinp
3
NC
14
CLK
PDN
4
NC
15
5
GND
16
INP
6
Cf_select
17
GND
7
Thermistor
18
Vdd
8
Thermistor
19
NC
9
NC
20
AD_trig
10
Fvref
21
Reset
11
NC
22
AD_sp
0.51 ± 0.05
Position accuracy of photosensitive area center: -0.3≤X≤+0.3
-0.3≤Y≤+0.3
Position accuracy of photosensitive area inclination: -5°≤θ≤+5°
Package material: ceramic
Lead treatment: Ni/Au plating
Lead material: FeNi alloy
Window material: borosilicate glass
Window material thickness: 0.75 ± 0.05 mm
Reflective index of window material: nd=1.47
AR coat: coated (1.55 μm peak)
Window sealing method: resin bonding
Note: NC should be left open.
Do not connect it to GND.
0022
KMIRA0022EE
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InGaAs linear image sensors
G11135-256DD, G11135-512DE
Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic
charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment.
Related information
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Precautions
∙ Disclaimer
∙ Image sensors
Information described in this material is current as of July, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
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China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMIR1018E11 Jul. 2015 DN
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