InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line (256/512 pixels) near infrared image sensor (0.95 to 1.7 μm) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors consist of an InGaAs photodiode array and CMOS chip that contains a charge amplifier array, an offset compensation circuit, a shift register, and a timing generator. The InGaAs photodiode array and the CMOS chip are electrically connected by indium bumps. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application. Features Applications Single video line (256/512 pixels) Foreign object screening High-speed data rate: 5 MHz max. Agricultural product inspection Choice of two conversion efficiency levels Pixel size: G11135-256DD (50 × 50 μm) G11135-512DE (25 × 25 μm) Related products Built-in temperature sensor Driver circuit for InGaAs liner image sensor C11514 Small variations in dark output between pixels Room temperature operation General ratings Parameter Cooling Number of total pixels Number of effective pixels Image size Pixel size Pixel pitch Package Window material G11135-256DD G11135-512DE Non-cooled 256 512 256 512 12.8 × 0.05 12.8 × 0.025 50 × 50 25 × 25 50 25 22-pin ceramic (refer to the dimensional outline) Borosilicate glass with anti-reflective coating Unit pixels pixels mm μm (H) × μm (V) μm - Cross sectional image InGaAs photodiode array CMOS chip Bump Window Wire bonding KMIRC0053EA www.hamamatsu.com 1 InGaAs linear image sensors G11135-256DD, G11135-512DE Block diagram (G11135-512DE) CMOS chip Shift register ..... CLK RESET Charge amplifier Timing generator VIDEO CMOS readout circuit ..... ..... InGaAs chip ..... Shift register AD_sp ..... AD_trig KMIRC0048EA Absolute maximum ratings Parameter Supply voltage Clock voltage Reset pulse voltage Gain selection terminal voltage Operating temperature Storage temperature Soldering conditions Thermistor power dissipation Symbol Vdd, INP, Fvref, Vinp, PDN Vɸ V(RES) Vcfsel Topr Tstg Pd_th Condition Value Unit Ta=25 °C -0.3 to +6.0 V Ta=25 °C Ta=25 °C Ta=25 °C -0.3 to +6.0 -0.3 to +6.0 -0.3 to +6.0 -10 to +60 -20 to +70 260 °C or less, within 5 s 400 max. V V V °C °C mW Ta=25 °C Note: This product must be used within the range of the absolute maximum ratings. Product quality may suffer if any item of the absolute maximum ratings is exceeded even momentarily. Recommended terminal voltage Parameter Supply voltage Differential reference voltage Video line reset voltage Input stage amplifier reference voltage Pixel voltage High Clock pulse voltage Low High Reset pulse voltage Low Symbol Vdd Fvref Vinp INP PDN Vɸ RESET Min. 4.7 1.1 3.9 3.9 3.9 4.7 4.7 - Typ. 5.0 1.2 4.0 4.0 4.0 5 0 5 0 Max. 5.3 1.3 4.1 4.1 4.1 5.3 0.4 5.3 0.3 Unit V V V V V V V 2 InGaAs linear image sensors G11135-256DD, G11135-512DE Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP, Vinp, PDN=4 V, Fvref=1.2 V, f=5 MHz) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Symbol λ λp S Conversion efficiency*1 CE Saturation charge*2 Saturation voltage*2 Photoresponse nonuniformity*3 Average dark output*4 Dark output nonuniformity*4 Readout noise*4 Dynamic range Defective pixels*5 *1: *2: *3: *4: *5: Condition λ=λp High gain Low gain Qsat Vsat PRNU VDmean DSNU N D - Min. 1.45 0.7 2.3 1.05 1200 - Typ. 0.95 to 1.7 1.55 0.82 930 160 2.8 2.6 ±5 1.25 ±3 1 2600 - Max. 1.65 - Unit μm μm A/W - nV/e- ±10 1.45 ±10 2 1 MeV % V mV mV rms % Cf_select=0 V (high gain), 5 V (low gain) High gain, integration time 500 μs High gain, 50% of saturation, after dark output subtraction, excluding first and last pixels, integration time 200 μs High gain, integration time 200 μs Pixels with photoresponse nonuniformity, readout noise, or dark output nonuniformity higher than the maximum value Electrical characteristics (Ta=25 °C) Parameter Supply current Symbol 256 ch 512 ch Differential reference current Video line reset voltage Input stage amplifier reference current Pixel voltage High Output voltage Low Clock frequency Output impedance Data rate High A/D trigger, A/D start pulse voltage Low Thermistor resistance Thermistor B constant*6 lvdd Ifvref Ivinp I(INP) I(PDN) VIDEO f Zo DR Vtrg,Vsp Rth B Min. 0.1 0.1 - Typ. 50 75 3.85 1.25 5 f Vdd GND 10 3950 Max. 75 100 1 1 1 1 5 5 - Unit mA mA mA mA mA V MHz kΩ MHz V kΩ K *6: T1=25 °C, T2=50 °C 3 InGaAs linear image sensors G11135-256DD, G11135-512DE Equivalent circuit G11135-256DD PDN Cf_select S/H VIDEO INP Fvref Photodiode array Charge amplifier array CMOS readout circuit KMIRC0049EA G11135-512DE Cf_select PDN S/H VIDEO Odd pixels Even pixels INP Fvref Odd pixels Cf_select S/H INP Even pixels Photodiode array Charge amplifier array CMOS readout circuit KMIRC0054EA 4 InGaAs linear image sensors G11135-256DD, G11135-512DE Connection example Pulse generator CLK AD_sp Reset AD_trig Controller Buffer amp Buffer amp Cf_select ADC INP Supply voltage PDN Vinp Fvref Vdd GND Video Buffer amp KMIRC0051EA 5 InGaAs linear image sensors G11135-256DD, G11135-512DE Timing chart (G11135-512DE) , ) 6 CLK 4 CLK 8 μs CLK Reset Integration time (setting) 5 CLK 5 CLK Blank Integration time (actual) AD_sp AD_trig 512 CLK Video 1 2 511 512 Integration time (actual) = Integration time (setting) - 8 μs + 1 CLK tf(clk) CLK tr(clk) tpw(clk) tr(res) tf(res) Reset KMIRC0 tpw(res) KMIRC0050EC Parameter Clock pulse frequency Clock pulse width Clock pulse rise/fall times Reset pulse width Reset pulse rise/fall times Symbol f tpw(clk) tr(clk), tf(clk) High Low tpw(res) tr(res), tf(res) Min. 0.1 60 0 *7 Number of channels + 12 0 Typ. 100 20 20 Max. 5 30 -*8 30 Unit MHz ns ns clock ns *7: (5 CLK + 8 μs) or (18 μs -1 CLK), whichever is longer. *8: 1.008 ms - 1 CLK 6 InGaAs linear image sensors G11135-256DD, G11135-512DE Spectral response (Ta=25 °C) 1.0 Photo sensitivity (A/W) 0.8 0.6 0.4 0.2 0 0.8 1.2 1.0 1.4 1.6 1.8 Wavelength (μm) KMIRB0051EB Temperature characteristics of thermistor (Typ.) Thermistor resistance (kΩ) 1000 100 10 1 -10 (Typ.) Temperature Thermistor resistance (°C) (kΩ) -10 53.0 -5 41.2 0 32.1 5 25.1 10 19.8 15 15.7 20 12.5 25 10.0 30 8.06 35 6.53 40 5.32 45 4.36 50 3.59 55 2.97 60 2.47 0 10 20 30 40 50 60 Temperature (°C) KMIRB0059EA 7 InGaAs linear image sensors G11135-256DD, G11135-512DE Pin connections Terminal name PDN AD_sp Cf_select Thermistor AD_trig Input/Output Input Output Input*9 Output Output RESET Input CLK Input INP Input Vinp Input Fvref Input VIDEO Vdd GND Output Input Input Function and recommended connection Cathode bias terminal for InGaAs photodiode Digital start signal for A/D conversion Signal for selecting feedback capacitance (integration capacitance) on CMOS chip Thermistor for monitoring temparature inside the package Sampling synchronous signal for A/D conversion Reset pulse for initializing the feedback capacitance in the charge amplifier formed in the CMOS chip. Integration time is determined by the high period of this pulse. Clock pulse for operating the CMOS shift register Input stage amplifier reference voltage. Supply voltage for operating the signal processing circuit in the CMOS chip. Video line reset voltage. Supply voltage for operating the signal processing circuit in the CMOS chip. Differential amplifier reference voltage. Supply voltage for operating the signal processing circuit in the CMOS chip. Differential amplifier output. Analog video signal. Supply voltage for operating the signal processing circuit in the CMOS chip (+5 V) Grand for the signal processing circuit in the CMOS chip (0 V) Remark 4.0 V 0 to 5 V 0 V or 5 V 0 to 5 V 0 to 5 V 0 to 5 V 4.0 V 4.0 V 1.2 V 1.25 to 3.85 V 5V 0V *9: Conversion efficiency is determined by supply voltage to the Cf_select terminals as shown below. Conversion efficiency 160 nV/e930 nV/e- Cf_select High Low Low: 0 V (GND), High: 5 V (Vdd) 8 InGaAs linear image sensors G11135-256DD, G11135-512DE Dimensional outline (unit: mm) 31.8 ± 0.3 Thermistor 13 12 1 10 11 15.5 ± 0.3 22 21 13.2 ± 0.3 15.1 ± 0.3 23.2 ± 0.3 2 Index mark 4±1 3.0 ± 0.3 Photosensitive surface 1.7 ± 0.2 Photosensitive area (left side 1 ch) 2.54 ± 0.15 Pin no. Function Pin no. Function 1 NC 12 Video 2 NC 13 Vinp 3 NC 14 CLK PDN 4 NC 15 5 GND 16 INP 6 Cf_select 17 GND 7 Thermistor 18 Vdd 8 Thermistor 19 NC 9 NC 20 AD_trig 10 Fvref 21 Reset 11 NC 22 AD_sp 0.51 ± 0.05 Position accuracy of photosensitive area center: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Position accuracy of photosensitive area inclination: -5°≤θ≤+5° Package material: ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Window material: borosilicate glass Window material thickness: 0.75 ± 0.05 mm Reflective index of window material: nd=1.47 AR coat: coated (1.55 μm peak) Window sealing method: resin bonding Note: NC should be left open. Do not connect it to GND. 0022 KMIRA0022EE 9 InGaAs linear image sensors G11135-256DD, G11135-512DE Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Image sensors Information described in this material is current as of July, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. 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No. KMIR1018E11 Jul. 2015 DN 10