InGaAs area image sensor
G11097-0707S
Image sensor with 128 × 128 pixels developed for two-dimensional infrared imaging
The G11097-0707S has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
indium bump. A timing generator in the ROIC provides an analog video output and AD-TRIG output which are easily obtained by just supplying a master clock (MCLK) and master start pulse (MSP) from external digital inputs.
The G11097-0707S has 128×128 pixels arrayed at a 50 μm pitch and their signals are read out from a single video line.
Light incident on the InGaAs photodiodes is converted into electrical signals which are then input to the ROIC through indium bumps. Electrical signals in the ROIC are converted into voltage signals by charge amplifiers and then sequentially
output from the video line by the shift register. The G11097-0707S is hermetically sealed in a metal package together with
a one-stage thermoelectric cooler to deliver low-cost yet highly stable operation.
Features
Applications
Spectral response range: 0.95 to 1.7 μm
Thermal imaging monitor
Excellent linearity by offset compensation
Laser beam profiler
High sensitivity: 1600 nV/e-
Near infrared image detection
Simultaneous charge integration for all pixels
(global shutter mode)
Foreign object detection
Simple operation (built-in timing generator)
One-stage TE-cooled
Block diagram
Start
www.hamamatsu.com
Shift register
A sequence of operation of the readout circuit is described below.
In the readout circuit, the charge amplifier output voltage is sampled
and held simultaneously at all pixels during the integration time determined by the low period of the master start pulse (MSP) which is as a
frame scan signal. Then the pixels are scanned and their video signals
are output.
Pixel scanning starts from the starting point at the upper left in the
right figure. The vertical shift register scans from top to bottom in the
right figure while sequentially selecting each row.
For each pixel on the selected row, the following operations are performed:
Transfers the sampled and held optical signal information to the signal processing circuit as a signal voltage.
Resets the amplifier in each pixel after having transferred the signal
voltage and transfers the reset voltage to the signal processing circuit.
The signal processing circuit samples and holds the signal voltage
and reset voltage .
The horizontal shift register scans from left to right in the right figure, and the voltage difference between and is calculated in the
offset compensation circuit. This eliminates the amplifier offset voltage in each pixel. The voltage difference between and is output
as the output signal in the form of serial data.
The vertical shift register then selects the next row and repeats the
operations from to . After the vertical shift register advances to the
128th row, the MSP, which is a frame scan signal, goes low. After that,
when the MSP goes high and then low, the reset switches for all pixels
are simultaneously released and the next frame integration begins.
128 × 128 pixels
End
Signal processing circuit
Offset
compensation
circuit
VIDEO
Shift register
KMIRC0059EA
1
InGaAs area image sensor
G11097-0707S
Structure
Parameter
Image size
Cooling
Number of total pixels
Number of effective pixels
Pixel size
Pixel pitch
Package
Window
Specification
6.4 × 6.4
One-stage TE-cooled
16384 (128 × 128)
16384 (128 × 128)
50 × 50
50
28-pin metal (refer to dimensional outline)
Anti-reflective coating borosilicate glass
Unit
mm
pixels
pixels
μm
μm
-
Absolute maximum ratings (Ta=25 °C, unless otherwise noted)
Parameter
Supply voltage
Clock pulse voltage
Start pulse voltage
Operating temperature
Storage temperature
TE-cooler allowable current
TE-cooler allowable voltage
Thermistor power dissipation
Symbol
Vdd
V(MCLK)
Value
-0.3 to +5.5
Vdd +0.5
Vdd +0.5
-10 to +60
-20 to +70
1.7
4.1
0.2
V(MSP)
Topr
Tstg
Ic
Vc
Pth
Unit
V
V
V
°C
°C
A
V
mW
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, Td=25 °C, Vdd=5 V, PD_bias=4.5 V)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Conversion efficiency
Saturation charge
Saturation output voltage
Photoresponse
nonuniformity*1
Dark output
Dark current
Dark output nonuniformity
Temperature coefficient of dark output
Readout noise
Dynamic range
Defective pixel*2
Symbol
λ
λp
S
CE
Qsat
Vsat
PRNU
VD
ID
DSNU
∆TDS
Nr
DR
-
Condition
λ=λp
After subtracting dark output
After subtracting dark output,
Integration time 5 ms
Integration time 10 ms
Integration time 10 ms
Integration time 10 ms
Min.
0.7
1.9
Typ.
0.95 to 1.7
1.55
0.8
1600
1.4
2.3
Max.
-
Unit
μm
μm
A/W
nV/eMeV
-
±10
±20
%
1.1
-
1.3
2
±0.05
1.1
700
3300
-
1.5
10
±0.2
1400
1
V
pA
V
times/°C
μV rms
%
*1: Measured at one-half of the saturation, excluding first and last pixels
*2: Pixels with non-standard photoresponse nonuniformity (integration time 5 ms), saturation output voltage, dark output, dark current,
dark output nonuniformity, or readout noise.
One or less cluster of four or more contiguous defective pixels
<Examples of four contiguous defective pixels>
Normal pixel
Defective pixel
KMIRC0060EB
2
InGaAs area image sensor
G11097-0707S
Electrical characteristics (Ta=25 °C)
Parameter
Supply voltage
Supply current
Ground
Element bias
Element bias current
High
Low
Video output voltage
Clock frequency
Video data rate
Thermistor resistance
Symbol
Vdd
I(Vdd)
Vss
PD_bias
I(PD_bias)
VH
VL
Min.
4.9
4.4
3.4
1.1
8.2
f
fV
Rth
Max.
5.1
100
4.6
1
3.8
1.5
40
9.8
Typ.
5
70
0
4.5
3.6
1.3
f/8
9
Unit.
V
mA
V
V
mA
V
MHz
MHz
kΩ
Equivalent circuit
Whole image sensor
THERM
THERM
Thermistor
1 pixel
Reset
Switch
Shift
register
Sample-and-hold Switch
Offset
compensation
circuit
VIDEO
Photodiode
Vb1
0.1 μF
One-stage
TE-cooler
PD_bias
Vdd
Vss
TE(+) TE(-)
Timing
generator
MCLK
AD_TRIG
MSP
External input
KMIRC0063ED
3
InGaAs area image sensor
G11097-0707S
Connection example
Power supply
for digital buffer (D)
Power supply
for analog buffer (A)
Power supply
for sensor
GND +5 V
GND -15 V +15 V
GND +5 V
Temperature
control circuit
Vb1
+15V (A)
VIDEO
(signal output)
C2
B1
-15V (A)
+5V (D)
G11097-0707S
PD_bias
C2
R1
AD_TRIG
(output for A/D
conversion)
VR1
B2
C1
+5V (D)
TE (+)
TE (-)
THERM
THERM
MCLK (input)
B2
+5V (D)
MSP (input)
B2
Measurement board
(Reference) Parameter values
(Reference) Buffer type
Symbol
Value
Symbol
Type
R1
10 Ω
B1
AD847
VR1
10 kΩ
B2
TC74VHCT541
C1
330 pF
C2
0.1 μF
KMIRC0061ED
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InGaAs area image sensor
G11097-0707S
Timing chart
The video output from a single pixel is equal to 8 MCLK (master clock) pulses. The MSP (master start pulse) is a signal for setting the
integration time, so making the low (0 V) period of the MSP longer will extend the integration time. The MSP also functions as a signal
that triggers each control signal to perform frame scan. When the MSP goes from low (0 V) to high (5 V) , each control signal starts on
the falling edge of the MCLK and frame scan is performed during the high period of the MSP.
One frame scanning period [128 lines × 128 rows (including blank) × 8 MCLK]
MCLK
(input)
MSP
(input)
AD_TRIG
(output)
VIDEO
(output)
(Video űŦųŪŰť)
(Integration time)*1
90 MCLK
8 MCLK
8 MCLK
94 MCLK*2
(Blank period)
(1 ch)
(2 ch)
(Blank period) (129 ch)
tf(MCLK)
tr(MCLK)
8 MCLK
8 MCLK
8 MCLK
(130 ch)
(16384 ch) (Blank period)
tpw(MCLK)
t1
tr(MSP)
t2
tf(MSP)
6 MCLK (Reset period)*3
t3
tpw(MSP)
Integration time
*1: A minimum number of MCLK of integration time is 40 MCLK.
*2: There are blanks of 94 MCLK between each line.
*3: A minimum number of MCLK of reset period is 200 MCLK.
KMIRC0062EB
KMIRC0062EB
Parameter
Clock pulse voltage
Symbol
High
Low
tr(MCLK)
tf(MCLK)
tpw(MCLK)
Clock pulse rise/fall times
Clock pulse width
Start pulse voltage
Start pulse rise/fall times
width*3
Start pulse
Start (rise) timing*4
Start (fall) timing*4
Output setting time
V(MCLK)
High
Low
V(MSP)
tr(MSP)
tf(MSP)
tpw(MSP)
t1
t2
t3
Min.
Vdd - 0.5
0
Typ.
Vdd
0
Max.
Vdd + 0.5
0.5
Unit
V
V
0
10
12
ns
10
Vdd - 0.5
0
Vdd
0
Vdd + 0.5
0.5
ns
V
V
0
10
12
ns
0.001
10
10
-
-
10
50
ms
ns
ns
ns
*3: Integration time max.=10 ms
*4: If the sensor is driven with these timings set shorter than the Min. value, then the operation may delay by 1 MCLK pulse.
5
InGaAs area image sensor
G11097-0707S
Photosensitivity temperature characteristic
Spectral response
(Ta=25 °C)
1.0
(Typ.)
100
Td=60 °C
90
80
Relative sensitivity (%)
Photosensitivity (A/W)
0.8
0.6
0.4
0.2
Td=40 °C
70
60
Td=20 °C
50
40
30
Td=-10 °C
20
10
0
0.8
1.2
1.0
1.4
1.6
0
1.55
1.8
Wavelength (μm)
1.60
1.65
1.70
Wavelength (μm)
KMIRB0072EB
KMIRB0051EB
Cooling characteristics of TE-cooler
Thermistor temperature characteristics
(Typ.)
70
40
60
35
50
Element temperature (°C)
Thermistor resistance (kΩ)
45
30
25
20
15
10
5
0
-20 -10
1.75
(Typ. Ta=25 °C, thermal resistance of heatsink 0.5 °C/W)
40
30
20
10
0
-10
0
10
20
30
40
Temperature (°C)
50
60
70
KMIRB0067EA
-20
-0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Current (A)
KMIRB0062ED
There is the following relation between the thermistor
resistance and temperature.
R1 = R2 × exp B {1/(T1 + 273.15) - 1/(T2 + 273.15)}
R1: resistance at T1 °C
R2: resistance at T2 °C
B: B constant (B=3410 K ± 2%)
Thermistor resistance=9 kΩ (at 25 °C)
6
InGaAs area image sensor
G11097-0707S
Current vs. voltage (TE-cooler)
(Typ. Ta=25 °C, thermal resistance of heatsink 0.5 °C/W)
2.0
1.8
1.6
Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Voltage (V)
KMIRB0063EC
Dimensional outline (unit: mm)
outline (G11097-0707S, unit: mm)
63.5 ± 0.15
53.3 ± 0.15
38.1 ± 0.15
19.0 ± 0.3
(14.4 ± 0.2)
1 2
1.0 ± 0.2
4.10 ± 0.3
Index mark
6.9 ± 0.3
15
(14.4 ± 0.2)
10.2 ± 0.15
22.9 ± 0.15
25.4 ± 0.15
28
20.3 ± 0.15
2.54
19.0 ± 0.3
R 1.59
14
Photosensitive area* 6.4 × 6.4
(28 ×)2.54
(28 ×) ϕ0.46
* The center position of the photosensitive area is the same as that of the package.
KMIRA0026EC
KMIRA0026EC
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InGaAs area image sensor
G11097-0707S
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Name
NC
VIDEO
TE(+)
NC
Vdd
THERM
THERM
Vss(CASE)
NC
NC
NC
NC
NC
Vdd
MCLK
AD_TRIG
Vdd
MSP
NC
NC
Vdd
NC
NC
NC
Vdd
TE(-)
PD_bias
Vb1
Input/Output
Output
Input
Input
Output
Output
Input
Input
Input
Output
Input
Input
Input
Input
Input
Input
Output
Function
Remark
Video output
Thermoelectric cooler (+)
+5 V power supply
Thermistor
Thermistor
0 V ground
+5 V power supply
Timing generator control pulse
A/D sampling signal
+5 V power supply
Frame scan start pulse
+5 V power supply
+5 V power supply
Thermoelectric cooler (-)
Photodiode bias voltage
Pixel bias voltage
1.3 to 3.6 V
5V
0V
5V
Synchronized with falling edge
Synchronized with falling edge
5V
5V
5V
4.5 V
1.27 V
* Do not connect anything to the NC terminals.
Note: Connect a bypass copacitor of 0.1 μF to the Vb1 terminal.
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InGaAs area image sensor
G11097-0707S
Precautions
(1) Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic
charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment.
(2) Incident window
If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the
window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab
moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no
spot or stain remains.
(3) Soldering
To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering
should be performed within 5 seconds at a soldering temperature below 260 °C.
(4) Operating and storage environments
Handle the device within the temperature range specified in the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Image sensors/Precautions
Information described in this material is current as of June, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
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China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMIR1021E06 Jun. 2014 DN
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