BAS116L Low-leakage diode 4 May 2016 Product data sheet 1. General description Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • • Switching time typical: trr = 0.8 µs Low leakage current typical: IR = 3 pA Repetitive peak reverse voltage: VRRM ≤ 85 V Low capacitance typical: Cd = 2 pF Leadless ultra small SMD plastic package Low package height of 0.48 mm AEC-Q101 qualified 3. Applications • • Low-leakage current applications General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Min Typ Max Unit VRRM repetitive peak reverse Tj = 25 °C voltage - - 85 V IF forward current Tamb = 25 °C - - 325 mA VR reverse voltage Tj = 25 °C - - 75 V VF forward voltage IF = 150 mA; Tj = 25 °C - - 1.25 V IR reverse current VR = 75 V; Tj = 25 °C - 0.003 5 nA trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C - 0.8 3 µs [1] Conditions [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS116L NXP Semiconductors Low-leakage diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode Simplified outline 1 Graphic symbol 2 1 2 006aab040 Transparent top view DFN1006-2 (SOD882) 6. Ordering information Table 3. Ordering information Type number BAS116L Package Name Description Version DFN1006-2 DFN1006-2: leadless ultra small plastic package; 2 terminals SOD882 7. Marking Table 4. Marking codes Type number Marking code BAS116L J6 BAS116L Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 12 BAS116L NXP Semiconductors Low-leakage diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 75 V VRRM repetitive peak reverse voltage - 85 V IF forward current Tamb = 25 °C - 325 mA IFRM repetitive peak forward current tp ≤ 0.5 ms; δ ≤ 0.25 ; Tj = 25 °C - 700 mA IFSM non-repetitive peak forward current tp = 100 µs; Tj(init) = 25 °C; square wave - 4 A tp = 1 ms; Tj(init) = 25 °C; square wave - 1.5 A tp = 1 s; Tj(init) = 25 °C; square wave - 0.5 A [1] - 335 mW [2] - 610 mW Ptot total power dissipation [1] Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm². aaa-022907 0.4 IF (mA) 0.3 0.2 0.1 0 0 25 50 75 100 125 150 175 Tamb (°C) FR4 PCB, standard footprint Fig. 1. Forward current as a function of ambient temperature; derating curve BAS116L Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 12 BAS116L NXP Semiconductors Low-leakage diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) [1] [2] [3] thermal resistance from junction to solder point Min Typ Max Unit [1] - - 375 K/W [2] - - 205 K/W [3] - - 40 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm². Soldering point of cathode tab. aaa-022922 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0.02 0.01 10 0 1 10-5 10-4 10-3 10-2 10-1 1 102 10 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 Zth(j-a) (K/W) 102 aaa-022923 duty cycle = 1 0.75 0.5 0.25 0.1 0.33 0.2 0.05 10 0 0.02 1 10-5 0.01 10-4 10-3 10-2 FR4 PCB, mounting pad for cathode 1 cm 10-1 1 102 10 tp (s) 103 2 Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BAS116L Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 12 BAS116L NXP Semiconductors Low-leakage diode 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 1 mA; Tj = 25 °C - - 0.9 V IF = 10 mA; Tj = 25 °C - - 1 V IF = 50 mA; Tj = 25 °C - - 1.1 V IF = 150 mA; Tj = 25 °C - - 1.25 V VR = 75 V; Tj = 25 °C - 0.003 5 nA VR = 75 V; Tj = 150 °C - 3 80 nA IR reverse current Cd diode capacitance VR = 0 V; f = 1 MHz; Tamb = 25 °C - 2 - pF trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C - 0.8 3 µs aaa-022961 1 mlb754 102 IR (nA) IF (A) 10 (1) 10-1 (1) (2) (3) 1 (4) 10-2 10- 1 10-3 (2) 10- 2 10-4 0.0 0.5 1.0 1.5 VF (V) 10- 3 2.0 0 50 100 150 Tj (°C) 200 VR = 75 V (1) Maximum values (2) Typical values (1) Tj = 150 °C (2) Tj = 85 °C (3) Tj = 25 °C (4) Tj = −40 °C Fig. 5. Reverse current as a function of junction Fig. 4. Forward current as a function of forward voltage; temperature typical values BAS116L Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 12 BAS116L NXP Semiconductors Low-leakage diode aaa-022962 2.0 aaa-020909 10 Cd (pF) IFSM (A) 1.5 1.0 1 0.5 0.0 0 5 10 15 20 VR (V) 10-1 10-1 25 f = 1 MHz; Tamb = 25 °C Fig. 6. Diode capacitance as a function of reverse voltage; typical values BAS116L Product data sheet 1 102 10 tp (ms) 103 Based on square wave currents. Tamb = 25 °C Fig. 7. Non-repetitive forward current as a function of pulse duration; maximum values All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 12 BAS116L NXP Semiconductors Low-leakage diode 11. Test information tr D.U.T. RS = 50 Ω IF tp t 10 % + IF SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS mga881 (1) 90 % VR input signal output signal (1) IR = 1 mA Fig. 8. Reverse recovery time test circuit and waveforms Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 0.50 0.46 0.62 0.55 2 0.30 0.22 0.65 0.30 0.22 1.02 0.95 1 0.55 0.47 cathode marking on top side (if applicable) Dimensions in mm 03-04-17 Fig. 9. Package outline DFN1006-2 (SOD882) BAS116L Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 12 BAS116L NXP Semiconductors Low-leakage diode 13. Soldering 1.3 0.7 R0.05 (8×) solder lands 0.6 0.7 0.8 (2×) (2×) (2×) 0.9 solder resist solder paste occupied area 0.3 (2×) Dimensions in mm 0.4 (2×) 0.5 (2×) sod882_fr Fig. 10. Reflow soldering footprint for DFN1006-2 (SOD882) BAS116L Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 12 BAS116L NXP Semiconductors Low-leakage diode 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BAS116L v.1 20160504 Product data sheet - - BAS116L Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. 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All rights reserved 10 / 12 BAS116L NXP Semiconductors Low-leakage diode Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BAS116L Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 12 BAS116L NXP Semiconductors Low-leakage diode 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Test information......................................................... 7 12. Package outline.......................................................... 7 13. Soldering..................................................................... 8 14. Revision history..........................................................9 15. Legal information..................................................... 10 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 4 May 2016 BAS116L Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 12 / 12