IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC S G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free D2PAK (TO-263) SiHF634S-GE3 IRF634SPbF SiHF634S-E3 D2PAK (TO-263) SiHF634STRR-GE3a IRF634STRRPbFa SiHF634STR-E3a Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Currenta SYMBOL LIMIT VDS VGS 250 ± 20 8.1 5.1 32 0.59 0.025 300 8.1 7.4 74 3.1 4.8 - 55 to + 150 300d ID IDM Pulsed Drain Linear Derating Factor Linear Derating Factor (PCB Mount)e EAS Single Pulse Avalanche Energyb Avalanche Currenta IAR Repetitive Avalanche Energya EAR Maximum Power Dissipation TC = 25 °C PD Maximum Power Dissipation (PCB Mount)e TA = 25 °C Peak Diode Recovery dV/dtc dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 7.3 mH, Rg = 25 , IAS = 8.1 A (see fig. 12). c. ISD 8.1 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). UNIT V A W/°C mJ A mJ W V/ns °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91035 S11-1047-Rev. C, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634S, SiHF634S Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - 62 Maximum Junction-to-Ambient (PCB Mount)a RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0, ID = 250 μA 250 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.37 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 20 V - - ± 100 VDS = 250 V, VGS = 0 V - - 25 VDS = 200 V, VGS = 0 V, TJ = 125 °C - - 250 - - 0.45 1.6 - - S - 770 - ID = 5.1 Ab VGS = 10 V VDS = 50 V, ID = 5.1 Ab μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 5.6 A, VDS = 200 V, see fig. 6 and 13b - 190 - - 52 - - - 41 - - 6.5 Gate-Drain Charge Qgd - - 22 Turn-On Delay Time td(on) - 9.6 - - 21 - - 42 - - 19 - - 4.5 - - 7.5 - - - 8.1 - - 32 Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance tr td(off) VDD = 125 V, ID = 5.6 A, Rg = 12 , RD = 22 , see fig. 10b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact pF nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 8.1 A, VGS = 0 S Vb TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb - - 2.0 V - 220 440 ns - 1.2 2.4 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 91035 S11-1047-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634S, SiHF634S Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 100 4.5 V 101 ID, Drain Current (A) ID, Drain Current (A) Top 150 °C 20 µs Pulse Width TC = 25 °C 10-1 100 4 101 4.5 V 100 20 µs Pulse Width TC = 150 °C 100 91035_02 Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91035 S11-1047-Rev. C, 30-May-11 3.0 2.5 7 8 9 10 ID = 5.6 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 101 VDS, Drain-to-Source Voltage (V) 6 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) Top 5 VGS, Gate-to-Source Voltage (V) 91035_03 Fig. 1 - Typical Output Characteristics, TC = 25 °C VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 20 µs Pulse Width VDS = 50 V 10-1 101 VDS, Drain-to-Source Voltage (V) 91035_01 25 °C 100 91035_04 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634S, SiHF634S 1750 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 1400 1050 Ciss 700 Coss 350 Crss ISD, Reverse Drain Current (A) Vishay Siliconix 101 150 °C 100 0 100 0.4 0.6 ID = 5.6 A 2 ID, Drain Current (A) VDS = 200 V VDS = 125 V 12 Operation in this area limited by RDS(on) 5 16 VDS = 50 V 8 4 102 5 10 µs 2 10 100 µs 5 1 ms 2 1 10 ms 5 For test circuit see figure 13 0 0 91035_06 10 20 30 1.2 1.0 Fig. 7 - Typical Source-Drain Diode Forward Voltage 103 20 0.8 VSD, Source-to-Drain Voltage (V) 91035_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (V) VGS = 0 V 10-1 101 VDS, Drain-to-Source Voltage (V) 91035_05 25 °C 40 2 0.1 1 50 QG, Total Gate Charge (nC) TC = 25 °C TJ = 150 °C Single Pulse 91035_08 2 5 10 2 5 102 2 5 103 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Document Number: 91035 S11-1047-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634S, SiHF634S Vishay Siliconix RD VDS 10 VGS 8 ID, Drain Current (A) D.U.T. Rg + - VDD 10 V 6 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 4 Fig. 10a - Switching Time Test Circuit 2 VDS 0 25 50 75 100 125 90 % 150 TC, Case Temperature (°C) 91035_09 10 % VGS Fig. 9 - Maximum Drain Current vs. Case Temperature td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 − 0.5 0.2 0.1 PDM 0.1 0.05 t1 0.02 0.01 t2 Single Pulse (Thermal Response) Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 91035_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91035 S11-1047-Rev. C, 30-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634S, SiHF634S Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - I AS V DD VDS 10 V 0.01 Ω tp IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12a - Unclamped Inductive Test Circuit EAS, Single Pulse Energy (mJ) 700 ID 3.6 A 5.1 A Bottom 8.1 A Top 600 500 400 300 200 100 0 VDD = 50 V 25 91035_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 13 - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91035 S11-1047-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634S, SiHF634S Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive Period P.W. D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91035. Document Number: 91035 S11-1047-Rev. C, 30-May-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 Revision: 15-Sep-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000