IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free D2PAK (TO-263) SiHF614S-GE3 IRF614SPbF SiHF614S-E3 D2PAK (TO-263) IRF614STRLPbFa SiHF614STL-E3a D2PAK (TO-263) SiHF614STRR-GE3a IRF614STRRPbFa SiHF614STR-E3a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR TC = 25 °C TA = 25 °C PD dV/dt TJ, Tstg for 10 s LIMIT 250 ± 20 2.7 1.7 8.0 0.29 0.025 61 2.7 3.6 36 3.1 4.8 - 55 to + 150 300d UNIT V A W/°C mJ A mJ W V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 13 mH, Rg = 25 , IAS = 2.7 A (see fig. 12). c. ISD 2.7 A, dI/dt 65 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91026 S11-1063-Rev. C, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF614S, SiHF614S Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - 62 Maximum Junction-to-Ambient (PCB Mount)a RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 3.5 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS VGS = 0, ID = 250 μA 250 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.39 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V nA IGSS IDSS RDS(on) gfs VGS = ± 20 V - - ± 100 VDS = 250 V, VGS = 0 V - - 25 VDS = 200 V, VGS = 0 V, TJ = 125 °C - - 250 - - 2.0 0.90 - - S - 140 - - 42 - - 9.6 - - - 8.2 - - 1.8 ID = 1.6 Ab VGS = 10 V VDS = 50 V, ID = 1.6 Ab μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 2.7 A, VDS = 200 V, see fig. 6 and 13b pF nC Gate-Drain Charge Qgd - - 4.5 Turn-On Delay Time td(on) - 7.0 - - 7.6 - - 16 - - 7.0 - - 4.5 - - 7.5 - - - 2.7 - - 8.0 - - 2.0 V - 190 390 ns - 0.64 1.3 μC Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 125 V, ID = 2.7 A, Rg = 24 , RD = 45 , see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 2.7 A, VGS = 0 Vb TJ = 25 °C, IF = 2.7 A, dI/dt = 100 A/μsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 91026 S11-1063-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF614S, SiHF614S Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 100 10-1 4.5 V 100 100 25 °C 10-1 VDS, Drain-to-Source Voltage (V) 4.5 V 10-1 20 µs Pulse Width TC = 150 °C 10-2 10-1 91026_02 100 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91026 S11-1063-Rev. C, 30-May-11 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) Top 5 VGS, Gate-to-Source Voltage (V) 91026_03 Fig. 1 - Typical Output Characteristics, TC = 25 °C 100 20 µs Pulse Width VDS = 50 V 4 101 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 150 °C 10-2 20 µs Pulse Width TC = 25 °C 10-2 10-1 91026_01 ID, Drain Current (A) ID, Drain Current (A) Top 91026_04 3.0 2.5 ID = 2.7 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF614S, SiHF614S Vishay Siliconix 300 ISD, Reverse Drain Current (A) 250 Capacitance (pF) 101 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 200 Ciss 150 100 Coss 50 Crss 150 °C 25 °C 100 VGS = 0 V 0 100 0.5 101 VDS, Drain-to-Source Voltage (V) 91026_05 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 5 VDS = 200 V 16 VDS = 125 V VDS = 50 V 8 4 For test circuit see figure 13 0 0 91026_06 2 4 6 1.5 QG, Total Gate Charge (nC) Operation in this area limited by RDS(on) 2 10 5 100 µs 2 1 1 ms 5 TC = 25 °C TJ = 150 °C Single Pulse 2 0.1 1 8 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1.3 1.1 102 ID = 2.7 A 12 0.9 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 20 0.7 VSD, Source-to-Drain Voltage (V) 91026_07 91026_08 2 5 10 2 5 10 ms 102 2 5 103 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91026 S11-1063-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF614S, SiHF614S Vishay Siliconix RD VDS VGS 3.0 D.U.T. Rg + - VDD 2.5 ID, Drain Current (A) 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 2.0 1.5 Fig. 10a - Switching Time Test Circuit 1.0 VDS 0.5 90 % 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) 91026_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 0 − 0.5 1 0.2 0.1 0.1 PDM 0.05 0.02 0.01 Single Pulse (Thermal Response) t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 91026_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91026 S11-1063-Rev. C, 30-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF614S, SiHF614S Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T Rg + - I AS V DD VDS 10 V 0.01 Ω tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 140 ID 1.2 A 1.7 A Bottom 2.7 A Top 120 100 80 60 40 20 0 VDD = 50 V 25 91026_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91026 S11-1063-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF614S, SiHF614S Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91026. Document Number: 91026 S11-1063-Rev. C, 30-May-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 Revision: 15-Sep-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000