IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012) Straight Lead Option (Order as IRFU9012, SiHFU9012) Available Repetitive Avalanche Ratings RoHS* COMPLIANT Dynamic dV/dt Rating Simple Drive Requirements Ease of Paralleling DESCRIPTION S DPAK (TO-252) • • • • • • D S D P-Channel MOSFET The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt capability. The Power MOSFET transistors also feature all of the well established advantages of MOSFET’S such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The DPAK (TO-252) surface mount package brings the advantages of Power MOSFET’s to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9012, SiHFR9012 is provided on 16 mm tape. The straight lead option IRFU9012, SiHFU9012 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products. ORDERING INFORMATION Package Lead (Pb)-free SnPb DPAK (TO-252) IRFR9012PbF SiHFR9012-E3 IRFR9012 SiHFR9012 DPAK (TO-252) IRFR9012TRPbFa SiHFR9012T-E3a IRFR9012TRa SiHFR9012Ta DPAK (TO-252) IRFR9012TRLPbFa SiHFR9012TL-E3a IRFR9012TRLa SiHFR9012TLa IPAK (TO-251) IRFU9012PbF SiHFU9012-E3 IRFU9012 SiHFU9012 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current SYMBOL VDS VGS VGS at - 10 V TC = 25 °C TC = 100 °C Currenta ID IDM Pulsed Drain Linear Derating Factor EAS Single Pulse Avalanche Energyb IAR Repetitive Avalanche Currenta EAR Repetitive Avalanche Energya PD Maximum Power Dissipation TC = 25 °C dV/dt Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range TJ, Tstg for 10 s Soldering Recommendations (Peak Temperature)d Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. VDD = - 25 V, starting TJ = 25 °C, L = 9.7 mH, RG = 25 Ω, peak IL = - 5.3 A. c. ISD ≤ - 5.3 A, dI/dt ≤ - 80 A/µs, VDD ≤ 40 V, TJ ≤ 150 °C, suggested RG = 24 Ω. d. 0.063" (1.6 mm) from case. LIMIT - 50 ± 20 - 4.5 - 2.8 - 18 0.20 240 - 5.3 2.5 25 5.8 - 55 to + 150 300 UNIT V A W/°C mJ A mJ W V/ns °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91377 S09-0373-Rev. A, 09-Mar-09 www.vishay.com 1 IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. Maximum Junction-to-Ambient RthJA Case-to-Sink RthCS RthJC Maximum Junction-to-Case (Drain)a TYP. MAX. - - 110 - 1.7 - - - 5.0 UNIT °C/W Note a. Mounting pad must cover heatsink surface area. SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = - 250 µA - 50 - - V Static Drain-Source Breakdown Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage Gate-Source Threshold Voltage IGSS VGS = ± 20 V - - ± 500 nA Zero Gate Voltage Drain Current IDSS VDS = max. rating, VGS = 0 V - - - 250 VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C - - - 1000 - 0.5 0.7 Ω VDS ≤ - 50 V, IDS = - 2.8 A 1.1 1.7 - S VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 9 - 240 - - 160 - Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VGS = - 10 V ID = - 2.8 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) - 30 - - 6.1 9.1 - 2.0 3.0 - 3.9 5.9 - 6.1 9.2 - 47 71 - 13 20 - 35 59 - 4.5 - - 7.5 - - - - 5.3 S - - - 18 TJ = 25 °C, IS = - 5.3 A, VGS = 0 Vb - - - 5.5 ID = - 4.7 A, VDS = 0.8 x max. rating, see fig. 16 VGS = - 10 V (Independent operating temperature) VDD = - 25 V, ID = - 4.7 A, RG = 24 Ω, RD = 5.6 Ω, see fig. 15 (Independent operating temperature) tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact. pF nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = - 4,7 A, dI/dt = 100 A/µsb V 33 75 160 ns 0.090 0.22 0.52 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91377 S09-0373-Rev. A, 09-Mar-09 IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 4 - Maximum Safe Operating Area Fig. 2 - Typical Transfer Characteristics Fig. 5 - Typical Transconductance vs. Drain Current Fig. 3 - Typical Saturation Characteristics Fig. 6 - Typical Source-Drain Diode Forward Voltage Document Number: 91377 S09-0373-Rev. A, 09-Mar-09 www.vishay.com 3 IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Fig. 7 - Breakdown Voltage vs. Temperature Fig. 8 - Normalized On-Resistance vs. Temperature www.vishay.com 4 Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91377 S09-0373-Rev. A, 09-Mar-09 IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Fig. 11 - Typical On-Resistance vs. Drain Current Fig. 13 - Maximum Avalanche vs. Starting Junction Temperature L Vary tp to obtain required IL VDS D.U.T. RG + V DD - 10 V 0.05 Ω tp IL Fig. 13b - Unclamped Inductive Test Circuit IAS VDS IL VDD Fig. 12 - Maximum Drain Current vs. Case Temperature tp VDS Fig. 13c - Unclamped Inductive Waveforms Document Number: 91377 S09-0373-Rev. A, 09-Mar-09 www.vishay.com 5 IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration td(on) td(off) tf tr VGS QG - 10 V 10 % QGS QGD VG 90 % VDS Charge Fig. 15a - Switching Time Waveforms Fig. 16a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. RD VDS VGS RG 50 kΩ 12 V 0.2 µF 0.3 µF D.U.T. - +VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % D.U.T. + VDS VGS - 3 mA IG ID Current sampling resistors Fig. 15b - Switching Time Test Circuit www.vishay.com 6 Fig. 16b - Gate Charge Test Circuit Document Number: 91377 S09-0373-Rev. A, 09-Mar-09 IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % * ISD VGS = - 5 V for logic level and - 3 V drive devices Fig. 17 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91377. Document Number: 91377 S09-0373-Rev. A, 09-Mar-09 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000