IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 50 RDS(on) (Ω) VGS = - 10 V 0.28 Qg (Max.) (nC) 14 Qgs (nC) 6.5 Qgd (nC) 6.5 Configuration Single S • • • • • • • Surface Mountable (Order As IRFR9020/SiHFR9020) Straight Lead Option (Order As IRFU9020/SiHFU9020) Repetitive Avalanche Ratings Dynamic dV/dt Rating Simple Drive Requirements Ease of Paralleling Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION DPAK (TO-252) IPAK (TO-251) G D P-Channel MOSFET The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt. The Power MOSFET transistors also feature all of the well established advantages of MOSFET’S such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The TO-252 surface mount package brings the advantages of Power MOSFET’s to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9020/SiHFR9020 is provided on 16mm tape. The straight lead option IRFR9020/SiHFR9020 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products. ORDERING INFORMATION Package Lead (Pb)-free SnPb DPAK (TO-252) IRFR9020PbF SiHFR9020-E3 IRFR9020 SiHFR9020 DPAK (TO-252) IRFR9020TRPbFa SiHFR9020T-E3a IRFR9020TRa SiHFR9020Ta DPAK (TO-252) IRFR9020TRLPbFa SiHFR9020TL-E3a IRFR9020TRLa SiHFR9020TLa IPAK (TO-251) IRFU9020PbF SiHFU9020-E3 IRFU9020 SiHFU9020 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current SYMBOL VDS VGS VGS at - 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya ID IDM EAS IAR EAR LIMIT - 50 ± 20 - 9.9 - 6.3 - 40 0.33 440 - 9.9 4.2 UNIT V A W/°C mJ A mJ * Pb containing terminations are not RoHS compliant, exemptions may apply www.kersemi.com 1 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Maximum Power Dissipation TC = 25 °C PD Peak Diode Recovery dV/dtc dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, RG = 25 Ω, Peak IL = - 9.9 A c. ISD ≤ - 9.9 A, dI/dt ≤ -120 A/µs, VDD ≤ 40 V, TJ ≤ 150 °C. d. 0.063" (1.6 mm) from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 42 5.8 - 55 to + 150 300d UNIT W V/ns °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient RthJA Case-to-Sink RthCS - - 110 - 1.7 - Maximum Junction-to-Case (Drain) RthJC - - 3.0 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = - 250 µA - 50 - - V Static Drain-Source Breakdown Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage Gate-Source Threshold Voltage IGSS VGS = ± 20 V - - ± 500 nA Zero Gate Voltage Drain Current IDSS VDS = max. rating, VGS = 0 V - - 250 VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C - - 1000 - 0.20 0.28 Ω VDS ≤ - 50 V, IDS = - 5.7 A 2.3 3.5 - S VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 9 - 490 - - 320 - Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VGS = - 10 V ID = 5.7 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = - 10 V ID = - 9.7 A, VDS = 0.8 x max. rating, see fig. 16 (Independent operating temperature) VDD = - 25 V, ID = - 9.7 A, RG = 18 Ω, RD = 2.4 Ω, see fig. 15 (Independent operating temperature) tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact. 70 - - 9.4 14 - 4.3 6.5 - 4.3 6.5 - 8.2 12 - 57 66 - 12 18 - 25 38 - 4.5 - - 7.5 - nC ns D nH G S www.kersemi.com 2 - pF IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - - - 9.9 S - - - 40 TJ = 25 °C, IS = - 9.9 A, VGS = 0 Vb - - - 6.3 UNIT Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = - 9,7 A, dI/dt = 100 A/µsb V 56 110 280 ns 0.17 0.34 0.85 nC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics Fig. 3 - Typical Saturation Characteristics Fig. 4 - Maximum Safe Operating Area www.kersemi.com 3 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Fig. 5 - Typical Transconductance vs. Drain Current Fig. 6 - Typical Source-Drain Diode Forward Voltage www.kersemi.com 4 Fig. 7 - Breakdown Voltage vs. Temperature Fig. 8 - Normalized On-Resistance vs. Temperature IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 11 - Typical On-Resistance vs. Drain Current Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 12 - Maximum Drain Current vs. Case Temperature www.kersemi.com 5 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Fig. 13b - Unclamped Inductive Test Circuit IAS VDS IL VDD tp VDS Fig. 13c - Unclamped Inductive Waveforms Fig. 13a - Maximum Avalanche vs. Starting Junction Temperature Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration www.kersemi.com 6 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 td(on) tr td(off) tf VGS 10 % 90 % VDS Fig. 15a - Switching Time Waveforms Fig. 15b - Switching Time Test Circuit QG - 10 V QGS QGD VG Charge Fig. 16a - Basic Gate Charge Waveform Fig. 16b - Gate Charge Test Circuit www.kersemi.com 7 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % * VGS = - 5 V for logic level and - 3 V drive devices Fig. 17 - For P-Channel www.kersemi.com 8 ISD