Si4564DY Vishay Siliconix N- and P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0175 at VGS = 10 V 10 0.020 at VGS = 4.5 V 9.2 0.021 at VGS = - 10 V - 9.2 0.028 at VGS = - 4.5 V - 7.4 9.8 21.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook PCs D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G2 G1 Top View Ordering Information: Si4564DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 40 - 40 Gate-Source Voltage VGS ± 16 ± 20 TC = 25 °C 10 - 9.2 TC = 70 °C 8 - 7.4 Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID 8.0 TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current TC = 25 °C TA = 25 °C Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH TC = 70 °C TA = 25 °C - 5.8b, c - 40 - 2.6 ISM 1.6b, c 40 - 1.6b, c - 40 IAS 10 - 20 EAS 5 20 3.1 3.2 2 2.1 b, c 2b, c IS PD TA = 70 °C 2 1.28b, c TJ, Tstg Operating Junction and Storage Temperature Range - 7.2b, c b, c 2.6 TC = 25 °C Maximum Power Dissipation V b, c 6.2 40 Unit A mJ W 1.28b, c - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter P-Channel Symbol Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 50 62.5 47 62.5 Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 29 38 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel). Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 www.vishay.com 1 Si4564DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 40 VGS = 0 V, ID = - 250 µA P-Ch - 40 ID = 250 µA N-Ch V 40 ID = - 250 µA P-Ch - 34 ID = 250 µA N-Ch - 4.1 5.0 mV/°C ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 0.8 2.0 VDS = VGS, ID = - 250 µA P-Ch - 1.2 - 2.5 VDS = 0 V, VGS = ± 16 V N-Ch ± 100 VDS = 0 V, VGS = ± 20 V P-Ch ± 100 VDS = 40 V, VGS = 0 V N-Ch 1 VDS = - 40 V, VGS = 0 V P-Ch -1 VDS = 40 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 40 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS = 5 V, VGS = 10 V N-Ch 20 VDS = - 5 V, VGS = - 10 V P-Ch - 20 VGS = 10 V, ID = 8 A N-Ch 0.0145 0.0175 VGS = - 10 V, ID = - 8 A P-Ch 0.0175 0.021 VGS = 4.5 V, ID = 5 A N-Ch 0.017 0.020 VGS = - 4.5 V, ID = - 5 A P-Ch 0.0232 0.028 VDS = 15 V, ID = 8 A N-Ch 27 VDS = - 15 V, ID = - 8 A P-Ch 25 V nA µA A Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Crss Qg N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz 855 P-Ch 2000 N-Ch 120 P-Ch 240 N-Ch 48 P-Ch 202 pF VDS = 20 V, VGS = 10 V, ID = 10 A N-Ch 20.5 31 VDS = - 20 V, VGS = - 10 V, ID = - 10 A P-Ch 41.5 63 N-Ch 9.8 15 P-Ch 21.7 33 N-Ch 2.6 P-Ch 5.6 N-Channel VDS = 20 V, VGS = 4.5 V, ID = 10 A N-Ch 2.6 P-Ch 9.8 Qgs Gate-Drain Charge Qgd P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A Gate Resistance Rg f = 1 MHz www.vishay.com 2 N-Ch N-Ch 0.3 1.5 3.0 P-Ch 1.3 6.4 12.8 nC Ω Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 Si4564DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω N-Channel VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time N-Channel VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω N-Ch 7 14 P-Ch 9 18 N-Ch 10 20 P-Ch 9 18 N-Ch 18 36 P-Ch 50 90 N-Ch 9 18 P-Ch 14 28 N-Ch 11 22 75 P-Ch 42 N-Ch 15 30 P-Ch 40 70 N-Ch 23 46 P-Ch 40 70 N-Ch 13 26 P-Ch 15 30 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM VSD N-Ch 2.6 P-Ch - 2.6 N-Ch 40 P-Ch A - 40 IS = 2 A N-Ch 0.74 1.2 IS = - 2 A P-Ch - 0.77 - 1.2 N-Ch 17 34 P-Ch 30 60 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C N-Ch 10 20 P-Ch 26 52 Reverse Recovery Fall Time ta P-Channel IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 10 P-Ch 15 Reverse Recovery Rise Time tb N-Ch 7 P-Ch 15 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 www.vishay.com 3 Si4564DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 40 V GS = 10 V thru 4 V 8 V GS = 3 V I D - Drain Current (A) I D - Drain Current (A) 32 24 16 6 T C = 25 °C 4 2 8 T C = 125 °C V GS = 2 V 0.5 1.0 1.5 2.0 T C = - 55 °C 0 0.0 2.5 0.6 1.2 1.8 2.4 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.025 1200 0.022 960 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 0.019 V GS = 4.5 V 0.016 V GS = 10 V 3.0 Ciss 720 480 0.013 240 0.010 0 Coss Crss 0 10 20 30 40 50 0 8 ID - Drain Current (A) 16 2.0 ID = 10 A ID = 8 A 8 V GS = 10 V V DS = 10 V 6 V DS = 20 V V DS = 30 V 4 2 (Normalized) 1.7 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 40 Capacitance 10 1.4 V GS = 4.5 V 1.1 0.8 4.4 8.8 13.2 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 32 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0 0.0 24 17.6 22.0 0.5 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 Si4564DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 ID = 8 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.08 0.06 0.04 T J = 125 °C 0.02 T J = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 0.2 48 0 36 Power (W) VGS(th) Variance (V) 60 - 0.6 - 50 ID = 5 mA ID = 250 μA - 25 0 25 50 75 4 5 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 0.4 - 0.4 3 V GS - Gate-to-Source Voltage (V) V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage - 0.2 2 24 12 100 125 0 0.001 150 0.01 0.1 1 T J - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 I D - Drain Current (A) 10 Limited by R DS(on)* 1 ms 1 10 ms 100 ms 0.1 1s 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 www.vishay.com 5 Si4564DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 11.0 I D - Drain Current (A) 8.8 6.6 4.4 2.2 0.0 0 25 50 75 100 125 150 T C - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.8 0.6 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 T C - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 Si4564DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 120 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 www.vishay.com 7 Si4564DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 10 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 6 TC = 25 °C 4 3V 8 0 TC = - 55 °C 0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.035 3100 0.031 2480 0.027 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = 125 °C 2 VGS = 4.5 V 0.023 Ciss 1860 1240 VGS = 10 V 0.019 5 Coss 620 Crss 0.015 0 0 8 16 24 32 40 0 8 ID - Drain Current (A) 16 32 40 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 10 A ID = 8 A 1.6 8 VGS = 10 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 24 VDS = 10 V 6 VDS = 20 V 4 VDS = 30 V 2 1.4 VGS = 4.5 V 1.2 1.0 0.8 0 0 9 18 27 Qg - Total Gate Charge Gate Charge www.vishay.com 8 36 45 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 Si4564DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 ID = 8 A 0.08 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.0 0.06 TJ = 125 °C 0.04 0.02 TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 0.8 40 ID = 250 μA Power (W) VGS(th) - Variance (V) 0.5 ID = 5 mA 0.2 30 20 - 0.1 10 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Junction Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1s TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 www.vishay.com 9 Si4564DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 11.0 ID - Drain Current (A) 8.8 6.6 4.4 2.2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.6 0.3 0.8 0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 Si4564DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 Single Pulse 3. TJM - TA = PDMZthJA (t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65922. Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 www.vishay.com 11 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000