Si4564DY Datasheet

Si4564DY
Vishay Siliconix
N- and P-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
40
P-Channel
- 40
ID (A)a Qg (Typ.)
RDS(on) (Ω)
0.0175 at VGS = 10 V
10
0.020 at VGS = 4.5 V
9.2
0.021 at VGS = - 10 V
- 9.2
0.028 at VGS = - 4.5 V
- 7.4
9.8
21.7
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PCs
D1
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S2
G2
G1
Top View
Ordering Information: Si4564DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
D2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
40
- 40
Gate-Source Voltage
VGS
± 16
± 20
TC = 25 °C
10
- 9.2
TC = 70 °C
8
- 7.4
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
ID
8.0
TA = 70 °C
IDM
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
TC = 70 °C
TA = 25 °C
- 5.8b, c
- 40
- 2.6
ISM
1.6b, c
40
- 1.6b, c
- 40
IAS
10
- 20
EAS
5
20
3.1
3.2
2
2.1
b, c
2b, c
IS
PD
TA = 70 °C
2
1.28b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
- 7.2b, c
b, c
2.6
TC = 25 °C
Maximum Power Dissipation
V
b, c
6.2
40
Unit
A
mJ
W
1.28b, c
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
P-Channel
Symbol
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambientb, d
t ≤ 10 s
RthJA
50
62.5
47
62.5
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30
40
29
38
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
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1
Si4564DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
N-Ch
40
VGS = 0 V, ID = - 250 µA
P-Ch
- 40
ID = 250 µA
N-Ch
V
40
ID = - 250 µA
P-Ch
- 34
ID = 250 µA
N-Ch
- 4.1
5.0
mV/°C
ID = - 250 µA
P-Ch
VDS = VGS, ID = 250 µA
N-Ch
0.8
2.0
VDS = VGS, ID = - 250 µA
P-Ch
- 1.2
- 2.5
VDS = 0 V, VGS = ± 16 V
N-Ch
± 100
VDS = 0 V, VGS = ± 20 V
P-Ch
± 100
VDS = 40 V, VGS = 0 V
N-Ch
1
VDS = - 40 V, VGS = 0 V
P-Ch
-1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
N-Ch
10
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
P-Ch
- 10
VDS = 5 V, VGS = 10 V
N-Ch
20
VDS = - 5 V, VGS = - 10 V
P-Ch
- 20
VGS = 10 V, ID = 8 A
N-Ch
0.0145 0.0175
VGS = - 10 V, ID = - 8 A
P-Ch
0.0175
0.021
VGS = 4.5 V, ID = 5 A
N-Ch
0.017
0.020
VGS = - 4.5 V, ID = - 5 A
P-Ch
0.0232
0.028
VDS = 15 V, ID = 8 A
N-Ch
27
VDS = - 15 V, ID = - 8 A
P-Ch
25
V
nA
µA
A
Ω
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Crss
Qg
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz
855
P-Ch
2000
N-Ch
120
P-Ch
240
N-Ch
48
P-Ch
202
pF
VDS = 20 V, VGS = 10 V, ID = 10 A
N-Ch
20.5
31
VDS = - 20 V, VGS = - 10 V, ID = - 10 A
P-Ch
41.5
63
N-Ch
9.8
15
P-Ch
21.7
33
N-Ch
2.6
P-Ch
5.6
N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 10 A
N-Ch
2.6
P-Ch
9.8
Qgs
Gate-Drain Charge
Qgd
P-Channel
VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A
Gate Resistance
Rg
f = 1 MHz
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2
N-Ch
N-Ch
0.3
1.5
3.0
P-Ch
1.3
6.4
12.8
nC
Ω
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
Si4564DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Dynamica
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
Fall Time
P-Channel
VDD = - 20 V, RL = 2 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
N-Channel
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tf
P-Channel
VDD = - 20 V, RL = 2 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
IS
TC = 25 °C
td(off)
Turn-Off Delay Time
N-Channel
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
N-Ch
7
14
P-Ch
9
18
N-Ch
10
20
P-Ch
9
18
N-Ch
18
36
P-Ch
50
90
N-Ch
9
18
P-Ch
14
28
N-Ch
11
22
75
P-Ch
42
N-Ch
15
30
P-Ch
40
70
N-Ch
23
46
P-Ch
40
70
N-Ch
13
26
P-Ch
15
30
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
ISM
VSD
N-Ch
2.6
P-Ch
- 2.6
N-Ch
40
P-Ch
A
- 40
IS = 2 A
N-Ch
0.74
1.2
IS = - 2 A
P-Ch
- 0.77
- 1.2
N-Ch
17
34
P-Ch
30
60
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
N-Channel
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
N-Ch
10
20
P-Ch
26
52
Reverse Recovery Fall Time
ta
P-Channel
IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C
N-Ch
10
P-Ch
15
Reverse Recovery Rise Time
tb
N-Ch
7
P-Ch
15
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
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Si4564DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
40
V GS = 10 V thru 4 V
8
V GS = 3 V
I D - Drain Current (A)
I D - Drain Current (A)
32
24
16
6
T C = 25 °C
4
2
8
T C = 125 °C
V GS = 2 V
0.5
1.0
1.5
2.0
T C = - 55 °C
0
0.0
2.5
0.6
1.2
1.8
2.4
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.025
1200
0.022
960
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
0.019
V GS = 4.5 V
0.016
V GS = 10 V
3.0
Ciss
720
480
0.013
240
0.010
0
Coss
Crss
0
10
20
30
40
50
0
8
ID - Drain Current (A)
16
2.0
ID = 10 A
ID = 8 A
8
V GS = 10 V
V DS = 10 V
6
V DS = 20 V
V DS = 30 V
4
2
(Normalized)
1.7
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
40
Capacitance
10
1.4
V GS = 4.5 V
1.1
0.8
4.4
8.8
13.2
Qg - Total Gate Charge (nC)
Gate Charge
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32
V DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
0
0.0
24
17.6
22.0
0.5
- 50
- 25
0
25
50
75
100
125
150
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
Si4564DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
ID = 8 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
T J = 150 °C
1
T J = 25 °C
0.1
0.01
0.08
0.06
0.04
T J = 125 °C
0.02
T J = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
0.2
48
0
36
Power (W)
VGS(th) Variance (V)
60
- 0.6
- 50
ID = 5 mA
ID = 250 μA
- 25
0
25
50
75
4
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
0.4
- 0.4
3
V GS - Gate-to-Source Voltage (V)
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
- 0.2
2
24
12
100
125
0
0.001
150
0.01
0.1
1
T J - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
I D - Drain Current (A)
10
Limited by R DS(on)*
1 ms
1
10 ms
100 ms
0.1
1s
10 s
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
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Si4564DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
11.0
I D - Drain Current (A)
8.8
6.6
4.4
2.2
0.0
0
25
50
75
100
125
150
T C - Case Temperature (°C)
4.0
1.5
3.2
1.2
2.4
0.9
Power (W)
Power (W)
Current Derating*
1.6
0.8
0.6
0.3
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
T C - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
Si4564DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - T A = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
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Si4564DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
10
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
32
24
16
6
TC = 25 °C
4
3V
8
0
TC = - 55 °C
0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.035
3100
0.031
2480
0.027
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = 125 °C
2
VGS = 4.5 V
0.023
Ciss
1860
1240
VGS = 10 V
0.019
5
Coss
620
Crss
0.015
0
0
8
16
24
32
40
0
8
ID - Drain Current (A)
16
32
40
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
ID = 10 A
ID = 8 A
1.6
8
VGS = 10 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
24
VDS = 10 V
6
VDS = 20 V
4
VDS = 30 V
2
1.4
VGS = 4.5 V
1.2
1.0
0.8
0
0
9
18
27
Qg - Total Gate Charge
Gate Charge
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36
45
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
Si4564DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
ID = 8 A
0.08
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
0.0
0.06
TJ = 125 °C
0.04
0.02
TJ = 25 °C
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
0.8
40
ID = 250 μA
Power (W)
VGS(th) - Variance (V)
0.5
ID = 5 mA
0.2
30
20
- 0.1
10
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Junction Temperature (°C)
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
ID - Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
1s
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
10 s
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
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Si4564DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
11.0
ID - Drain Current (A)
8.8
6.6
4.4
2.2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
2.4
0.9
Power (W)
Power (W)
Current Derating*
1.6
0.6
0.3
0.8
0
0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
Si4564DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
0.02
Single Pulse
3. TJM - TA = PDMZthJA (t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65922.
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
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Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000