Si4670DY Vishay Siliconix Dual N-Channel 25-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0 8.0 8.0 8.0 5.5 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A)a 25 0.43 V at 1.0 A 2.3 • Synchronous Buck Converter • Game Machine • Notebook SO-8 S 1 /D 2 1 8 G1 2 7 D1 S2 3 6 S 1 /D 2 G2 4 5 S 1 /D 2 D2 D1 D1 Schottky Diode G1 G2 Top View Ordering Information: Si4670DY-T1-E3 (Lead (Pb)-free) Si4670DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 N-Channel MOSFET S1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Channel-1 Channel-2 Drain-Source Voltage 25 25 Gate-Source Voltage VGS ± 16 ± 16 8.0e 7 8.0e 7 7b, c 7b, c 5.6b, c 30 5.6b, c 30 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range V 2.3 2.3 1.5b, c 2.8 1.5b, c 2.8 1.8 1.8 1.8b, c 1.8b, c 1.1b, c 1.1b, c TJ, Tstg Unit A W - 55 to 150 °C THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum Junction-to-Ambientb, d t ≤ 10 s Symbol RthJA Maximum Junction-to-Foot (Drain) Steady State RthJF Channel-2 Typ. Max. Typ. Max. 57 70 57 70 36 44 36 44 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W (Channel-1 and Channel-2). e. Package limited. Document Number: 69595 S09-2109-Rev. C, 12-Oct-09 www.vishay.com 1 Si4670DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VGS = 0 V, ID = 250 µA Ch-1 25 VGS = 0 V, ID = 250 µA Ch-2 25 ΔVDS/TJ ID = 250 µA Ch-1 25 ΔVGS(th)/TJ ID = 250 µA Ch-1 - 4.7 VDS = VGS, ID = 250 µA Ch-1 1 2.2 VDS = VGS, ID = 250 µA Ch-2 1 2.2 VDS = 0 V, VGS = ± 16 V Ch-1 100 VDS = 0 V, VGS = ± 16 V Ch-2 100 VDS = 25 V, VGS = 0 V Ch-1 0.001 VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VDS = 25 V, VGS = 0 V Ch-2 VDS = 25 V, VGS = 0 V, TJ = 100 °C Ch-1 VDS = 25 V, VGS = 0 V, TJ = 100 °C Ch-2 V 0.07 mV/°C 0.5 0.025 5 V nA mA 20 VDS ≥ 5 V, VGS = 10 V Ch-1 20 VDS ≥ 5 V, VGS = 10 V Ch-2 20 VGS = 10 V, ID = 7 A Ch-1 0.019 0.023 VGS = 10 V, ID = 7 A Ch-2 0.019 0.023 VGS = 4.5 V, ID = 6.3 A Ch-1 0.023 0.028 VGS = 4.5 V, ID = 6.3 A Ch-2 0.023 0.028 VDS = 10 V, ID = 7 A Ch-1 23 VDS = 10 V, ID = 7 A Ch-2 23 Ch-1 680 Ch-2 680 Ch-1 120 Ch-2 180 Ch-1 55 Ch-2 70 VDS = 13 V, VGS = 10 V, ID = 7 A Ch-1 12 VDS = 13 V, VGS = 10 V, ID = 7 A Ch-2 12 18 Ch-1 5.5 8.5 Channel-1 VDS = 13 V, VGS = 4.5 V, ID = 7 A Ch-2 5.5 8.5 Ch-1 2 Channel-2 VDS = 13 V, VGS = 4.5 V, ID = 7 A Ch-2 2 Ch-1 1.5 Ch-2 1.5 Ch-1 2.5 Ch-2 3.2 A Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Ciss Channel-1 VDS = 13 V, VGS = 0 V, f = 1 MHz Coss Crss Qg Channel-2 VDS = 13 V, VGS = 0 V, f = 1 MHz Qgs Qgd Rg f = 1 MHz pF 18 nC Ω Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 69595 S09-2109-Rev. C, 12-Oct-09 Si4670DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Typ.a Max. Ch-1 15 25 Ch-2 15 25 Ch-1 50 75 Ch-2 50 75 Ch-1 20 30 Ch-2 20 30 Ch-1 10 15 Ch-2 10 15 Ch-1 10 15 Ch-2 10 15 Ch-1 12 20 Ch-2 12 20 Ch-1 15 25 Ch-2 15 25 Ch-1 10 15 Ch-2 10 15 Test Conditions Min. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time Channel-2 VDD = 13 V, RL = 2.3 Ω ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω Channel-1 VDD = 13 V, RL = 2.3 Ω ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω tf Channel-2 VDD = 13 V, RL = 2.3 Ω ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time Channel-1 VDD = 13 V, RL = 2.3 Ω ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM VSD Ch-1 2.3 Ch-2 2.3 Ch-1 30 Ch-2 30 IS = 5.6 A Ch-1 0.8 1.2 IS = 1 A Ch-2 0.37 0.43 Ch-1 15 30 Ch-2 15 30 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 8 16 Ch-2 8 16 Reverse Recovery Fall Time ta Channel-2 IF = 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 8.5 Ch-2 8.5 Ch-1 6.5 Ch-2 6.5 Reverse Recovery Rise Time tb A V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69595 S09-2109-Rev. C, 12-Oct-09 www.vishay.com 3 Si4670DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 10 VGS = 10 V thru 4 V 8 I D - Drain Current (A) ID - Drain Current (A) 24 18 VGS = 3 V 12 6 TC = - 55 °C 6 4 TC = 25 °C 2 TC = 125 °C 0 0.0 0.4 0.8 1.2 1.6 0 0.0 2.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.035 900 750 Ciss 0.030 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.5 VGS = 10 V 0.025 VGS = 4.5 V 0.020 600 450 300 Coss 150 0.015 Crss 0 0 6 12 18 24 30 0 5 ID - Drain Current (A) 10 20 25 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 10 1.6 ID = 7 A ID = 7 A 8 VDS = 13 V 6 VDS = 24 V 4 2 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 VGS = 10 V, 4.5 V 1.2 1.0 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 12 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69595 S09-2109-Rev. C, 12-Oct-09 Si4670DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.08 100 R DS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 7 A TJ = 150 °C 10 TJ = 25 °C 0.06 0.04 TA = 125 °C 0.02 TA = 25 °C 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 2.0 1.8 25 ID = 250 µA Power (W) VGS(th) (V) 20 1.6 1.4 15 10 1.2 5 1.0 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 100 IDM Limited Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ID(on) Limited 1 ms 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69595 S09-2109-Rev. C, 12-Oct-09 www.vishay.com 5 Si4670DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 10 2.5 8 Power Dissipation (W) I D - Drain Current (A) Package Limited 6 4 2 2.0 1.5 1.0 0.5 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 69595 S09-2109-Rev. C, 12-Oct-09 Si4670DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 69595 S09-2109-Rev. C, 12-Oct-09 www.vishay.com 7 Si4670DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 10 VGS = 10 V thru 4 V 8 I D - Drain Current (A) ID - Drain Current (A) 24 18 VGS = 3 V 12 6 TC = - 55 °C 6 4 TC = 25 °C 2 TC = 125 °C 0 0.0 0.4 0.8 1.2 1.6 0 0.0 2.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) 2.5 3.0 Transfer Characteristics 1000 0.035 800 0.030 VGS = 10 V 0.025 VGS = 4.5 V 0.020 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics 600 400 Coss Crss 200 0.015 0 0 6 12 18 24 30 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 10 1.6 ID = 7 A ID = 7 A 8 VDS = 13 V 6 VDS = 24 V 4 2 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 VGS = 10 V, 4.5 V 1.2 1.0 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 12 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69595 S09-2109-Rev. C, 12-Oct-09 Si4670DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 7 A TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.06 0.04 TA = 125 °C 0.02 0.01 TA = 25 °C 0.00 0.001 0.0 0.2 0.4 0.6 0.8 0 1.0 2 8 10 On-Resistance vs. Gate-to-Source Voltage 10-1 2.0 1.8 10-2 ID = 250 µA I R - Reverse Current (A) VGS(th) (V) 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.6 1.4 1.2 1.0 - 50 4 VR = 25 V VR = 10 V 10-3 10-4 10-5 10-6 - 25 0 25 50 75 100 125 150 0 25 TJ - Temperature (°C) 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Reverse Current vs. Junction Temperature 100 30 IDM Limited Limited by RDS(on)* 25 I D - Drain Current (A) 10 Power (W) 20 15 10 100 µs 1 ID(on) Limited 1 ms 10 ms 100 ms 1s 10 s DC 0.1 5 TA = 25 °C Single Pulse 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 Time (s) Single Pulse Power BVDSS Limited * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69595 S09-2109-Rev. C, 12-Oct-09 www.vishay.com 9 Si4670DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 10 2.5 8 Power Dissipation (W) I D - Drain Current (A) Package Limited 6 4 2 2.0 1.5 1.0 0.5 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 69595 S09-2109-Rev. C, 12-Oct-09 Si4670DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69595. Document Number: 69595 S09-2109-Rev. C, 12-Oct-09 www.vishay.com 11 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000