Si4922BDY Datasheet

Si4922BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)a, e
0.016 at VGS = 10 V
8
30
0.018 at VGS = 4.5 V
8
0.024 at VGS = 2.5 V
8
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
19
D1
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
D2
G2
Top View
Ordering Information: Si4922BDY-T1-E3 (Lead (Pb)-free)
Si4922BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Limit
30
± 12
8e
8e
8b, c, e
6.6b, c
35
2.5
1.7b, c
35
15
11.2
3.1
2
2b, c
TC = 25 °C
TA = 25 °C
Pulsed Sorce-Drain Current
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
ISM
IAS
EAS
PD
1.28b, c
- 50 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Limit
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
50
30
Maximum
62.5
40
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
Document Number: 74459
S09-0704-Rev. B, 27-Apr-09
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1
Si4922BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb
RDS(on)
Forward Transconductanceb
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
gfs
tr
mV/°C
- 4.6
0.6
1.8
V
100
nA
VDS = 30 V, VGS = 0 V
1
10
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 5 A
20
0.016
VGS = 4.5 V, ID = 5 A
0.0145
0.018
VGS = 2.5 V, ID = 5 A
0.018
0.024
VDS = 15 V, ID = 5 A
30
Ω
S
2070
VDS = 15 V, VGS = 0 V, f = 1 MHz
255
pF
135
VDS = 15 V, VGS = 10 V, ID = 5 A
41
62
19
29
VDS = 15 V, VGS = 4.5 V, ID = 5 A
3.5
f = 1 MHz
1.8
3
7
14
27
41
nC
3.7
VDD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
47
tf
8
15
td(on)
13
25
tr
µA
A
0.0135
31
td(off)
Unit
V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
td(on)
td(off)
Max.
35
ID = 250 µA
Gate-Body Leakage
Gate Threshold Voltage
Typ.a
VDD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
tf
53
80
68
102
54
81
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
IS
TC = 25 °C
2.5
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
35
IS = 1.7 A
IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.77
1.2
V
32
48
ns
21
32
nC
13
19
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74459
S09-0704-Rev. B, 27-Apr-09
Si4922BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
40
TJ = 125 °C
VGS = 10 V thru 3 V
1.6
I D - Drain Current (A)
I D - Drain Current (A)
32
24
16
2V
TJ = 25 °C
1.2
0.8
0.4
8
TJ = - 55 °C
0.5
1.0
1.5
2.0
0.0
0.0
2.5
0.6
1.2
1.8
2.4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
3000
0.026
2400
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
0.022
VGS = 2.5 V
0.018
VGS = 4.5 V
0.014
3.0
Ciss
1800
1200
600
Coss
VGS = 10 V
0.010
Crss
0
0
8
16
24
32
40
0
6
I D - Drain Current (A)
12
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.7
10
ID = 5 A
ID = 5 A
1.5
VDS = 10 V
VDS = 15 V
6
VDS = 20 V
4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
18
1.3
VGS = 4.5 V
VGS = 10 V
1.1
0.9
2
0
0
9
18
27
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74459
S09-0704-Rev. B, 27-Apr-09
36
45
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4922BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
100
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 5 A
150 °C
10
25 °C
1
0.08
0.06
0.04
125 °C
0.02
25 °C
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
1
4
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
100
0.4
ID = 250 µA
0.2
80
0.0
Power (W)
VGS(th) Variance (V)
3
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
- 0.2
- 0.4
- 0.6
- 50
2
60
40
20
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
Limited by RDS(on)*
ID - Drain Current (A)
10
10 µs
100 µs
1
1 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.1
10 ms
100 ms
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74459
S09-0704-Rev. B, 27-Apr-09
Si4922BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
I D - Drain Current (A)
10
7
Package Limited
5
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
Power Dissipation (W)
Power Dissipation (W)
Current Derating*
2.4
1.6
0.9
0.6
0.3
0.8
0.0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74459
S09-0704-Rev. B, 27-Apr-09
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Si4922BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74459.
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Document Number: 74459
S09-0704-Rev. B, 27-Apr-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000