Si4559ADY Datasheet

Si4559ADY
Vishay Siliconix
N- and P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
60
P-Channel
- 60
ID (A)a Qg (Typ.)
RDS(on) (Ω)
0.058 at VGS = 10 V
5.3
0.072 at VGS = 4.5 V
4.7
0.120 at VGS = - 10 V
- 3.9
0.150 at VGS = - 4.5 V
- 3.5
6 nC
8 nC
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• CCFL Inverter
D1
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S2
G2
G1
Top View
Ordering Information: Si4559ADY-T1-E3 (Lead (Pb)-free)
Si4559ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
D2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
60
- 60
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
5.3
- 3.9
TC = 70 °C
4.3
- 3.2
ID
4.3
TA = 70 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
TC = 70 °C
TA = 25 °C
1.7b, c
20
- 1.7b, c
- 25
IAS
11
15
EAS
6.1
11
3.1
3.4
2
2.2
b, c
2b, c
IS
PD
2
TA = 70 °C
1.3b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
- 2.4b, c
- 25
- 2.8
TC = 25 °C
Maximum Power Dissipation
- 3.0b, c
b, c
2.6
ISM
Pulsed Source-Drain Current
b, c
3.4
20
IDM
Pulsed Drain Current (10 µs Pulse Width)
Source Drain Current Diode Current
V
± 20
TC = 25 °C
TA = 25 °C
Unit
A
mJ
W
1.3b, c
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
P-Channel
Symbol
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambientb, d
t ≤ 10 s
RthJA
55
62.5
53
62.5
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
33
40
30
37
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel.
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
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1
Si4559ADY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
N-Ch
60
VGS = 0 V, ID = - 250 µA
P-Ch
- 60
ID = 250 µA
N-Ch
55
ID = - 250 µA
P-Ch
- 50
ID = 250 µA
N-Ch
-6
4
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
IDSS
ID(on)
RDS(on)
gfs
mV
ID = - 250 µA
P-Ch
VDS = VGS, ID = 250 µA
N-Ch
1
3
VDS = VGS, ID = - 250 µA
P-Ch
-1
-3
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
Zero Gate Voltage Drain Current
V
N-Ch
100
P-Ch
- 100
N-Ch
1
VDS = - 60 V, VGS = 0 V
P-Ch
-1
VDS = 60 V, VGS = 0 V, TJ = 55 °C
N-Ch
10
VDS = - 60 V, VGS = 0 V, TJ = 55 °C
P-Ch
- 10
VDS ≥ 5 V, VGS = 10 V
N-Ch
20
VDS ≤ - 5 V, VGS = - 10 V
P-Ch
- 25
VGS = 10 V, ID = 4.3 A
N-Ch
0.046
0.058
VGS = - 10 V, ID = - 3.1 A
P-Ch
0.1
0.120
VGS = 4.5 V, ID = 3.9 A
N-Ch
0.059
0.072
VGS = - 4.5 V, ID = - 0.2 A
P-Ch
0.126
0.150
VDS = 15 V, ID = 4.3 A
N-Ch
15
VDS = - 15 V, ID = - 3.1 A
P-Ch
8.5
V
nA
µA
A
Ω
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
N-Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 4.3 A
Total Gate Charge
Gate-Source Charge
Qg
VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A
665
P-Ch
650
N-Ch
75
P-Ch
95
N-Ch
40
P-Ch
60
N-Ch
13
20
22
P-Ch
14.5
6
9
12
P-Ch
8
N-Ch
2.3
P-Ch
2.2
N-Ch
2.6
P-Ch
3.7
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
f = 1 MHz
pF
N-Ch
N-Channel
VDS = 30 V, VGS = 4.5 V, ID = 4.3 A
P-Channel
VDS = - 30 V, VGS = - 4.5 V, ID = - 3.1 A
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2
N-Ch
N-Ch
2
3
P-Ch
14
20
nC
Ω
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Si4559ADY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Dynamica
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
Fall Time
P-Channel
VDD = - 30 V, RL = 12.5 Ω
ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω
N-Channel
VDD = 30 V, RL = 8.8 Ω
ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω
tf
P-Channel
VDD = - 30 V, RL = 12.5 Ω
ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω
IS
TC = 25 °C
td(off)
Turn-Off Delay Time
N-Channel
VDD = 30 V, RL = 8.8 Ω
ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω
N-Ch
15
25
P-Ch
30
45
N-Ch
65
100
P-Ch
70
105
N-Ch
15
25
P-Ch
40
60
N-Ch
10
15
P-Ch
30
45
N-Ch
10
15
15
P-Ch
10
N-Ch
15
25
P-Ch
13
20
N-Ch
20
30
P-Ch
35
55
N-Ch
10
15
P-Ch
30
45
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
ISM
VSD
N-Ch
2.6
P-Ch
- 2.8
N-Ch
20
P-Ch
A
- 25
IS = 1.7 A
N-Ch
0.8
1.2
IS = - 2 A
P-Ch
- 0.8
- 1.2
N-Ch
30
60
P-Ch
30
50
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
N-Channel
IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C
N-Ch
32
50
P-Ch
35
60
Reverse Recovery Fall Time
ta
P-Channel
IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C
N-Ch
25
P-Ch
16
Reverse Recovery Rise Time
tb
N-Ch
5
P-Ch
14
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
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Si4559ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
VGS = 10 thru 4 V
16
I D - Drain Current (A)
I D - Drain Current (A)
18
14
12
10
8
6
4
4
3
2
TC = 125 °C
1
25 °C
3V
2
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 55 °C
0
0.0
2.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.0
3.5
1000
0.080
800
C - Capacitance (pF)
R DS(on) - On-Resistance (mΩ)
0.075
0.070
0.065
VGS = 4.5 V
0.060
0.055
VGS = 10 V
0.050
Ciss
600
400
200
Coss
0.045
0
2
4
6
8
10
12
14
16
18
0
20
10
20
30
40
50
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
60
2.0
VDS = 30 V
ID = 4.3 A
1.8
8
RDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
Crss
0
0.040
6
4
VGS = 10 V
ID = 4.3 A
1.6
1.4
1.2
1.0
2
0.8
0
0
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3
6
9
12
15
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Si4559ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
R DS(on) - Drain-to-Source On-Resistance (mΩ)
20
TJ = 150 °C
I S - Source Current (A)
10
TJ = 25 °C
1
0.0
0.2
0.4
0.6
1.0
0.8
1.2
0.12
0.11
0.10
0.09
0.08
0.07
ID = 4.3 A
0.06
0.05
0.04
0
1.4
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.0
25
2.8
2.4
Power (W)
VGS(th) (V)
20
ID = 250 µA
2.6
2.2
2.0
15
10
1.8
5
1.6
1.4
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
Limited by RDS(on)*
10
I D - Drain Current (A)
100 µs
1 ms
1
10 ms
0.1
TA = 25 °C
Single Pulse
0.01
100 ms
1s
10 s
DC
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
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Si4559ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0
6
3.5
5
Power Dissipation (W)
ID - Drain Current (A)
3.0
4
3
2
2.5
2.0
1.5
1.0
1
0.5
0.0
0
25
50
75
100
125
0
150
25
50
75
100
125
150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Power Derating
Current Derating*
IC - Peak Avalanche Current (A)
100
10
TA =
1
0.000001
L . ID
BV - VDD
0.00001
0.0001
0.001
TA - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Si4559ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
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Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
25
VGS = 10 thru 5 V
20
I D - Drain Current (A)
I D - Drain Current (A)
20
15
4V
10
15
10
TC = 125 °C
5
5
3V
25 °C
- 55 °C
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
50
60
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1000
0.40
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.35
0.30
0.25
0.20
VGS = 4.5 V
VGS = 10 V
0.15
800
Ciss
600
400
0.10
200
Coss
0.05
0.00
Crss
0
0
5
10
15
20
25
0
10
20
ID - Drain Current (A)
40
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
2.2
10
VDS = 30 V
ID = 3.1 A
2.0
8
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
30
6
4
VGS = 10 V
ID = 3.1 A
1.8
1.6
1.4
1.2
1.0
2
0.8
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
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8
12
15
0.6
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.40
20
0.35
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TJ = 150 °C
TJ = 25 °C
1
0.0
0.30
0.25
ID = 3.1 A
0.20
0.15
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
6
8
10
On-Resistance vs. Gate-to-Source Voltage
0.6
50
0.4
40
ID = 250 µA
Power (W)
V GS(th) Variance (V)
Source-Drain Diode Forward Voltage
0.2
0.0
- 0.2
- 0.4
- 50
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
30
20
10
- 25
0
25
50
75
100
125
150
0
10-3
10-2
10-1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
100
IDM Limited
Limited
by R DS(on)*
I D - Drain Current (A)
10
P(t) = 0.0001
1
P(t) = 0.001
ID(on)
Limited
0.1
P(t) = 0.01
P(t) = 0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
P(t) = 1
P(t) = 10
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
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Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0
3.5
ID - Drain Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
4.5
100
IC - Peak Avalanche Current (A)
4.0
Power Dissipation (W)
3.5
3.0
2.5
2.0
1.5
1.0
10
TA =
L . ID
BV - VDD
0.5
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
1
0.000001
0.00001
0.0001
0.001
TA - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73624.
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
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11
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000