Si4559ADY Vishay Siliconix N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.5 6 nC 8 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • CCFL Inverter D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G2 G1 Top View Ordering Information: Si4559ADY-T1-E3 (Lead (Pb)-free) Si4559ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 60 - 60 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) 5.3 - 3.9 TC = 70 °C 4.3 - 3.2 ID 4.3 TA = 70 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH TC = 70 °C TA = 25 °C 1.7b, c 20 - 1.7b, c - 25 IAS 11 15 EAS 6.1 11 3.1 3.4 2 2.2 b, c 2b, c IS PD 2 TA = 70 °C 1.3b, c TJ, Tstg Operating Junction and Storage Temperature Range - 2.4b, c - 25 - 2.8 TC = 25 °C Maximum Power Dissipation - 3.0b, c b, c 2.6 ISM Pulsed Source-Drain Current b, c 3.4 20 IDM Pulsed Drain Current (10 µs Pulse Width) Source Drain Current Diode Current V ± 20 TC = 25 °C TA = 25 °C Unit A mJ W 1.3b, c - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter P-Channel Symbol Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 55 62.5 53 62.5 Maximum Junction-to-Foot (Drain) Steady State RthJF 33 40 30 37 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel. Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 1 Si4559ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA N-Ch 60 VGS = 0 V, ID = - 250 µA P-Ch - 60 ID = 250 µA N-Ch 55 ID = - 250 µA P-Ch - 50 ID = 250 µA N-Ch -6 4 On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb IDSS ID(on) RDS(on) gfs mV ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 1 3 VDS = VGS, ID = - 250 µA P-Ch -1 -3 VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current V N-Ch 100 P-Ch - 100 N-Ch 1 VDS = - 60 V, VGS = 0 V P-Ch -1 VDS = 60 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 60 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS ≥ 5 V, VGS = 10 V N-Ch 20 VDS ≤ - 5 V, VGS = - 10 V P-Ch - 25 VGS = 10 V, ID = 4.3 A N-Ch 0.046 0.058 VGS = - 10 V, ID = - 3.1 A P-Ch 0.1 0.120 VGS = 4.5 V, ID = 3.9 A N-Ch 0.059 0.072 VGS = - 4.5 V, ID = - 0.2 A P-Ch 0.126 0.150 VDS = 15 V, ID = 4.3 A N-Ch 15 VDS = - 15 V, ID = - 3.1 A P-Ch 8.5 V nA µA A Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 4.3 A Total Gate Charge Gate-Source Charge Qg VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A 665 P-Ch 650 N-Ch 75 P-Ch 95 N-Ch 40 P-Ch 60 N-Ch 13 20 22 P-Ch 14.5 6 9 12 P-Ch 8 N-Ch 2.3 P-Ch 2.2 N-Ch 2.6 P-Ch 3.7 Qgs Gate-Drain Charge Qgd Gate Resistance Rg f = 1 MHz pF N-Ch N-Channel VDS = 30 V, VGS = 4.5 V, ID = 4.3 A P-Channel VDS = - 30 V, VGS = - 4.5 V, ID = - 3.1 A www.vishay.com 2 N-Ch N-Ch 2 3 P-Ch 14 20 nC Ω Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 Si4559ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time P-Channel VDD = - 30 V, RL = 12.5 Ω ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω N-Channel VDD = 30 V, RL = 8.8 Ω ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω tf P-Channel VDD = - 30 V, RL = 12.5 Ω ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time N-Channel VDD = 30 V, RL = 8.8 Ω ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω N-Ch 15 25 P-Ch 30 45 N-Ch 65 100 P-Ch 70 105 N-Ch 15 25 P-Ch 40 60 N-Ch 10 15 P-Ch 30 45 N-Ch 10 15 15 P-Ch 10 N-Ch 15 25 P-Ch 13 20 N-Ch 20 30 P-Ch 35 55 N-Ch 10 15 P-Ch 30 45 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM VSD N-Ch 2.6 P-Ch - 2.8 N-Ch 20 P-Ch A - 25 IS = 1.7 A N-Ch 0.8 1.2 IS = - 2 A P-Ch - 0.8 - 1.2 N-Ch 30 60 P-Ch 30 50 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C N-Ch 32 50 P-Ch 35 60 Reverse Recovery Fall Time ta P-Channel IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 25 P-Ch 16 Reverse Recovery Rise Time tb N-Ch 5 P-Ch 14 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 3 Si4559ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 VGS = 10 thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 18 14 12 10 8 6 4 4 3 2 TC = 125 °C 1 25 °C 3V 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 55 °C 0 0.0 2.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 3.5 1000 0.080 800 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 0.075 0.070 0.065 VGS = 4.5 V 0.060 0.055 VGS = 10 V 0.050 Ciss 600 400 200 Coss 0.045 0 2 4 6 8 10 12 14 16 18 0 20 10 20 30 40 50 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 60 2.0 VDS = 30 V ID = 4.3 A 1.8 8 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) Crss 0 0.040 6 4 VGS = 10 V ID = 4.3 A 1.6 1.4 1.2 1.0 2 0.8 0 0 www.vishay.com 4 3 6 9 12 15 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 Si4559ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted R DS(on) - Drain-to-Source On-Resistance (mΩ) 20 TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C 1 0.0 0.2 0.4 0.6 1.0 0.8 1.2 0.12 0.11 0.10 0.09 0.08 0.07 ID = 4.3 A 0.06 0.05 0.04 0 1.4 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 25 2.8 2.4 Power (W) VGS(th) (V) 20 ID = 250 µA 2.6 2.2 2.0 15 10 1.8 5 1.6 1.4 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 µs 1 ms 1 10 ms 0.1 TA = 25 °C Single Pulse 0.01 100 ms 1s 10 s DC 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 5 Si4559ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 6 3.5 5 Power Dissipation (W) ID - Drain Current (A) 3.0 4 3 2 2.5 2.0 1.5 1.0 1 0.5 0.0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Power Derating Current Derating* IC - Peak Avalanche Current (A) 100 10 TA = 1 0.000001 L . ID BV - VDD 0.00001 0.0001 0.001 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 Si4559ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 7 Si4559ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 25 VGS = 10 thru 5 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 15 4V 10 15 10 TC = 125 °C 5 5 3V 25 °C - 55 °C 0 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 50 60 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1000 0.40 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.35 0.30 0.25 0.20 VGS = 4.5 V VGS = 10 V 0.15 800 Ciss 600 400 0.10 200 Coss 0.05 0.00 Crss 0 0 5 10 15 20 25 0 10 20 ID - Drain Current (A) 40 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2.2 10 VDS = 30 V ID = 3.1 A 2.0 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 30 6 4 VGS = 10 V ID = 3.1 A 1.8 1.6 1.4 1.2 1.0 2 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 Si4559ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.40 20 0.35 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C TJ = 25 °C 1 0.0 0.30 0.25 ID = 3.1 A 0.20 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 6 8 10 On-Resistance vs. Gate-to-Source Voltage 0.6 50 0.4 40 ID = 250 µA Power (W) V GS(th) Variance (V) Source-Drain Diode Forward Voltage 0.2 0.0 - 0.2 - 0.4 - 50 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 30 20 10 - 25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 IDM Limited Limited by R DS(on)* I D - Drain Current (A) 10 P(t) = 0.0001 1 P(t) = 0.001 ID(on) Limited 0.1 P(t) = 0.01 P(t) = 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited P(t) = 1 P(t) = 10 DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 9 Si4559ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.5 ID - Drain Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4.5 100 IC - Peak Avalanche Current (A) 4.0 Power Dissipation (W) 3.5 3.0 2.5 2.0 1.5 1.0 10 TA = L . ID BV - VDD 0.5 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 1 0.000001 0.00001 0.0001 0.001 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 Si4559ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73624. Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 11 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000