SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC TO-220AB D G G D S S Top View Ordering Information: SUP40N10-30-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TA = 25 °Cc Operating Junction and Storage Temperature Range ID V 38.5 17 IDM 75 IAS 35 EAS 61 PD Unit 89 A mJ b 3.1 W TJ, Tstg - 55 to 150 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc Free Air RthJA RthJC 40 62.5 °C/W 1.4 Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 66702 S10-1049-Rev. A, 03-May-10 www.vishay.com 1 SUP40N10-30-GE3 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) 4 VDS = 80 V, VGS = 0 V, TJ = 150 °C Drain-Source On-State Resistancea RDS(on) VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 15 A 0.024 0.030 VGS = 6 V, ID = 10 A 0.026 0.034 VDS = 15 V, ID = 15 A µA A VGS = 10 V, ID = 15 A, TJ = 125 °C gfs nA 150 75 0.054 VGS = 10 V, ID = 15 A, TJ = 150 °C Forward Transconductancea V Ω 0.060 10 S b Dynamic 2400 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 90 Total Gate Chargec Qg 35 c VGS = 0 V, VDS = 25 V, f = 1 MHz 270 pF 60 Gate-Source Charge Qgs Gate-Drain Chargec Qgd 9 Rg 1.7 td(on) 11 20 12 20 30 45 12 20 Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Time tr c Fall Timec td(off) VDS = 50 V, VGS = 10 V, ID = 40 A VDD = 50 V, RL = 1.25 Ω ID ≅ 40 A, VGEN = 10 V, Rg = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 Continuous Current 11 nC Ω °Cb IS 40 Pulsed Current ISM 75 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr ns IF = 30 A, dI/dt = 100 A/µs A 1.0 1.5 V 60 100 ns 5 8 A 0.15 0.4 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 66702 S10-1049-Rev. A, 03-May-10 SUP40N10-30-GE3 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 75 75 VGS = 10 V thru 6 V 60 I D - Drain Current (A) I D - Drain Current (A) 60 45 5V 30 15 45 30 TC = 125 °C 15 25 °C 4V - 55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 0.08 100 TC = - 55 °C R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 80 25 °C 60 125 °C 40 20 0.06 0.04 VGS = 6 V VGS = 10 V 0.02 0.00 0 0 15 30 45 60 0 75 30 45 60 75 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 3000 V GS - Gate-to-Source Voltage (V) Ciss 2400 C - Capacitance (pF) 15 1800 1200 600 Coss Crss VDS = 50 V ID = 40 A 16 12 8 4 0 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 66702 S10-1049-Rev. A, 03-May-10 100 0 10 20 30 40 50 60 70 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUP40N10-30-GE3 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 VGS = 10 V ID = 15 A I S - Source Current (A) RDS(on) - On-Resistance (Normalized) 1.5 1.0 0.5 0 - 50 - 25 0 25 50 75 100 125 TJ = 150 °C 10 TJ = 25 °C 1 0 150 0.3 TJ - Junction Temperature (°C) 1.2 Source-Drain Diode Forward Voltage 1000 VDS - Drain-to-Source Breakdown Voltage (V) 125 100 I Dav (A) 0.9 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature IAV (A) at TA = 25 °C 10 1 IAV (A) at TA = 150 °C 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 0.6 1 ID = 10 mA 120 115 110 105 100 95 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Drain-Source Breakdown Voltage vs. Junction Temperature Document Number: 66702 S10-1049-Rev. A, 03-May-10 SUP40N10-30-GE3 Vishay Siliconix THERMAL RATINGS 50 100 10 μs Limited by RDS(on)* 100 μs ID - Drain Current (A) ID - Drain Current (A) 40 30 20 10 1 ms 10 ms 1 100 ms, DC 10 TA = 25 °C Single Pulse 0 - 50 - 25 0 25 50 75 0.1 0.1 150 TC - Case Temperature (°C) 1 BVDSS Limited 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66702. Document Number: 66702 S10-1049-Rev. A, 03-May-10 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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