SUP40N10-30 Datasheet

SUP40N10-30
Vishay Siliconix
N-Channel 100-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
100
rDS(on) (Ω)
ID (A)
0.030 at VGS = 10 V
40
0.034 at VGS = 6 V
37.5
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
Available
RoHS*
COMPLIANT
TO-220AB
D
G
G D S
Top View
S
Ordering Information: SUP40N10-30
SUP40N10-30-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energya
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
Operating Junction and Storage Temperature Range
ID
Unit
V
40
23
IDM
75
IAS
35
EAS
61
A
mJ
b
PD
107
3.75
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB
Mountc
Free Air
Junction-to-Case (Drain)
RthJA
RthJC
40
62.5
°C/W
1.4
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72135
S-71662-Rev. C, 06-Aug-07
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SUP40N10-30
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
V(BR)DSS
VGS = 0 V, ID = 250 µA
100
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VDS = 0 V, VGS = ± 20 V
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
± 100
VDS = 80 V, VGS = 0 V
1
VDS = 80 V, VGS = 0 V, TJ = 125 °C
50
VDS = 80 V, VGS = 0 V, TJ = 175 °C
250
VDS ≥ 5 V, VGS = 10 V
ID(on)
Drain-Source On-State Resistancea
4
rDS(on)
75
0.024
0.030
VGS = 6 V, ID = 10 A
0.026
0.034
VGS = 10 V, ID = 15 A, TJ = 125 °C
Forward Transconductance
gfs
VDS = 15 V, ID = 15 A
nA
µA
A
VGS = 10 V, ID = 15 A
0.054
VGS = 10 V, ID = 15 A, TJ = 175 °C
a
V
Ω
0.067
10
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
c
2400
VGS = 0 V, VDS = 25 V, f = 1 MHz
90
35
Gate-Source Charge
Qgs
Gate-Drain Chargec
Qgd
9
Rg
1.7
Gate Resistance
Turn-On Delay Time
c
Rise Timec
Turn-Off Delay Timec
Fall Timec
VDS = 50 V, VGS = 10 V, ID = 40 A
td(on)
tr
td(off)
pF
270
VDD = 50 V, RL = 1.25 Ω
ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω
tf
60
nC
11
Ω
11
20
12
20
30
45
12
20
ns
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
40
Pulsed Current
ISM
75
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 30 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 30 A, di/dt = 100 A/µs
A
1.0
1.5
V
60
100
ns
5
8
A
0.15
0.4
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72135
S-71662-Rev. C, 06-Aug-07
SUP40N10-30
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
75
75
VGS = 10 thru 6 V
60
I D - Drain Current (A)
I D - Drain Current (A)
60
45
5V
30
15
45
30
TC = 125 °C
15
25 °C
4V
- 55 °C
0
0
0
2
4
6
8
10
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.08
100
TC = - 55 °C
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
80
25 °C
60
125 °C
40
20
0.04
VGS = 6 V
VGS = 10 V
0.02
0.00
0
0
15
30
45
60
0
75
15
30
45
60
75
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
20
3000
V GS - Gate-to-Source Voltage (V)
Ciss
2400
C - Capacitance (pF)
0.06
1800
1200
600
Crss
Coss
VDS = 50 V
ID = 40 A
16
12
8
4
0
0
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 72135
S-71662-Rev. C, 06-Aug-07
100
0
10
20
30
40
50
60
70
Qg - Total Gate Charge (nC)
Gate Charge
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SUP40N10-30
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
2.5
VGS = 10 V
ID = 15 A
I S - Source Current (A)
r DS(on) - On-Resistance
(Normalized)
2.0
1.5
1.0
TJ = 150 °C
10
TJ = 25 °C
0.5
0.0
- 50 - 25
0
25
50
75
100
125
150
1
0
175
0.3
0.6
0.9
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
130
1000
Drain-Source Breakdown Voltage (V)
ID = 10 mA
I Dav (A)
100
IAV (A) at TA = 25 °C
10
1
IAV (A) at TA = 150 °C
0.1
0.00001
0.0001
0.001
0.01
0.1
tin (Sec)
Avalanche Current vs. Time
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1
125
120
115
110
105
100
95
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain-Source Breakdown Voltage
vs. Junction Temperature
Document Number: 72135
S-71662-Rev. C, 06-Aug-07
SUP40N10-30
Vishay Siliconix
THERMAL RATINGS
1000
50
Limited
by rDS(on)
40
I D - Drain Current (A)
I D - Drain Current (A)
100
30
20
10 µs
100 µs
10
1 ms
10 ms
1
10
0
0
25
50
75
100
125
150
0.1
0.1
175
TC - Ambient Temperature (°C)
DC, 100 ms
TC = 25 °C
Single Pulse
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72135.
Document Number: 72135
S-71662-Rev. C, 06-Aug-07
www.vishay.com
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Disclaimer
All product specifications and data are subject to change without notice.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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