SUP57N20-33 Datasheet

SUP57N20-33
Vishay Siliconix
N-Channel 200-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
200
0.033 at VGS = 10 V
57
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
Available
RoHS*
COMPLIANT
APPLICATIONS
• Isolated DC/DC converters
- Primary-Side Switch
TO-220AB
D
DRAIN connected to TAB
G
G D S
Top View
S
Ordering Information: SUP57N20-33
SUP57N20-33-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
a
L = 0.1 mH
Single Pulse Avalanche Energy
TC = 25 °C
Maximum Power Dissipationa
TA = 25 °Cc
Operating Junction and Storage Temperature Range
ID
Unit
V
57
33
IDM
140
IAS
35
EAS
61
A
mJ
b
PD
300
3.75
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
RthJA
40
RthJC
0.5
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
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SUP57N20-33
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
V(BR)DSS
VDS = 0 V, ID = 250 µA
200
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VDS = 0 V, VGS = ± 20 V
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
± 100
VDS = 160 V, VGS = 0 V
1
VDS = 160 V, VGS = 0 V, TJ = 125 °C
50
VDS = 160 V, VGS = 0 V, TJ = 175 °C
250
VDS ≥ 5 V, VGS = 10 V
ID(on)
120
VGS = 10 V, ID = 30 A
Drain-Source On-State Resistancea
4
gfs
VDS = 15 V, ID = 30 A
µA
0.033
0.069
VGS = 10 V, ID = 30 A, TJ = 175 °C
Forward Transconductancea
nA
A
0.027
VGS = 10 V, ID = 30 A, TJ = 125 °C
rDS(on)
V
Ω
0.093
25
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
Gate-Drain Charge
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
Fall Timec
tr
td(off)
5100
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
480
210
90
VDS = 100 V, VGS = 10 V, ID = 85 A
130
nC
23
34
VDD = 100 V, RL = 1.5 Ω
ID ≅ 65 A, VGEN = 10 V, RG = 2.5 Ω
tf
24
35
220
330
45
70
200
300
ns
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
65
Pulsed Current
ISM
140
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 65 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 50 A, di/dt = 100 A/µs
A
1.0
1.5
V
130
200
ns
8
12
A
0.52
1.2
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72100
S-71662-Rev. B, 06-Aug-07
SUP57N20-33
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
140
140
VGS = 10 thru 7 V
6V
120
I D - Drain Current (A)
I D - Drain Current (A)
120
100
80
60
40
100
80
60
TC = 125 °C
40
5V
20
20
25 °C
- 55 °C
4V
0
0
0
2
4
6
8
0
10
1
2
3
4
5
6
7
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
180
0.060
TC = - 55 °C
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
150
25 °C
120
125 °C
90
60
30
0
0.045
VGS = 10 V
0.030
0.015
0.000
0
20
40
60
80
100
120
0
20
40
ID - Drain Current (A)
80
100
120
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
7000
20
V GS - Gate-to-Source Voltage (V)
6000
Ciss
C - Capacitance (pF)
60
5000
4000
3000
2000
Crss
1000
Coss
0
VDS = 100 V
ID = 65 A
16
12
8
4
0
0
25
50
75
100
125
150
0
25
50
75
100
125
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
150
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SUP57N20-33
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
100
VGS = 10 V
ID = 30 A
I S - Source Current (A)
r DS(on) - On-Resistance
(Normalized)
2.5
2.0
1.5
1.0
TJ = 150 °C
TJ = 25 °C
10
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
1
0
175
0.3
0.6
0.9
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
240
1000
230
ID = 1.0 mA
V (BR)DSS (V)
I Dav (A)
100
IAV (A) at TA = 25 °C
10
220
210
200
1
190
IAV (A) at TA = 150 °C
0.1
0.00001
0.0001
0.001
0.01
0.1
t in (Sec)
Avalanche Current vs. Time
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1
180
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
SUP57N20-33
Vishay Siliconix
THERMAL RATINGS
60
1000
Limited
by rDS(on)
50
10 µs
I D - Drain Current (A)
I D - Drain Current (A)
100
40
30
20
100 µs
10
1
10
0
1 ms
10 ms, 100 ms
DC
TC = 25 °C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
TC - Ambient Temperature (°C)
VDS - Drain-to-Source Voltage (V)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72100.
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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