SUM110N05-06L Vishay Siliconix N-Channel 55-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 55 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 110 0.0085 @ VGS = 4.5 V 92 D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package Qg (Typ) 65 APPLICATIONS D Automotive and Industrial D TO-263 G G D S Top View S Ordering Information: SUM110N05-06L SUM110N05-06L—E3 (Lead (Pb)-Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipation TA = 25_C c Operating Junction and Storage Temperature Range Symbol Limit VDS 55 VGS "20 ID 63 240 IAR 60 PD V 110 IDM EAR Unit 180 158b 3.7 A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient—PCB Mountc RthJA 40 Junction-to-Case RthJC 0.95 _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72005 S-42140—Rev. B, 15-Nov-04 www.vishay.com 1 SUM110N05-06L Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 55 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 55 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta Drain-Source On-State Resistancea IDSS ID(on) rDS(on) 3 VDS = 55 V, VGS = 0 V, TJ = 125_C 50 VDS = 55 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 120 gfs VGS = 10 V, ID = 30 A 0.0047 0.006 VGS = 4.5 V, ID = 20 A 0.0066 0.0085 VGS = 10 V, ID = 30 A, TJ = 125_C VDS = 15 V, ID = 30 A nA mA m A 0.0102 VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea V W 0.0132 30 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 310 Total Gate Chargec Qg 65 Gate-Source Chargec Qgs 15 Gate-Drain Chargec Qgd 16 Turn-On Delay Timec td(on) 15 25 tr 15 25 35 55 15 25 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 3300 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 30 V,, VGS = 10 V,, ID = 110 A VDD = 30 V, RL = 0.27 W ID ^ 110 A, VGEN = 10 V, Rg = 2.5 W tf 625 pF 100 nC ns Source-drain Diode Ratings and Characteristics (Tc = 25_C)b Continuous Current IS 110 Pulsed Current ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge trr IRM(REC) Qrr A IF = 110 A, VGS = 0 V 1.0 1.5 V 70 125 ns IF = 110 A, A di/dt = 100 A/ms A/ 2.5 5 A 0.09 0.31 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72005 S-42140—Rev. B, 15-Nov-04 SUM110N05-06L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 250 VGS = 10 thru 5 V 200 I D − Drain Current (A) I D − Drain Current (A) 200 150 4V 100 50 150 100 TC = 125_C 50 25_C 2, 3 V −55_C 0 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) 2 Transconductance 4 5 6 On-Resistance vs. Drain Current 0.015 r DS(on) − On-Resistance ( W ) TC = −55_C 160 25_C 120 125_C 80 40 0 0.012 0.009 VGS = 4.5 V 0.006 VGS = 10 V 0.003 0.000 0 15 30 45 60 75 90 0 20 40 VGS − Gate-to-Source Voltage (V) 80 100 120 100 120 Gate Charge V GS − Gate-to-Source Voltage (V) 20 4000 Ciss 3000 2000 Crss 1000 60 ID − Drain Current (A) Capacitance 5000 C − Capacitance (pF) 3 VGS − Gate-to-Source Voltage (V) 200 g fs − Transconductance (S) 1 Coss 0 VGS = 30 V ID = 110 A 16 12 8 4 0 0 11 22 33 44 VDS − Drain-to-Source Voltage (V) Document Number: 72005 S-42140—Rev. B, 15-Nov-04 55 0 20 40 60 80 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM110N05-06L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A I S − Source Current (A) 2.0 rDS(on) − On-Resiistance (Normalized) Source-Drain Diode Forward Voltage 100 1.5 1.0 0.5 0.0 −50 −25 0 25 50 75 100 125 150 TJ = 150_C 1 0.2 175 TJ = 25_C 10 0.4 TJ − Junction Temperature (_C) 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 70 100 65 On-Resistance vs. Junction Temperature 10 rDS(on) − On-Resiistance (Normalized) I Dav (a) ID = 10 m A IAV (A) @ TJ = 25_C 1 IAV (A) @ TJ = 150_C 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 60 55 50 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Document Number: 72005 S-42140—Rev. B, 15-Nov-04 SUM110N05-06L Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Case Temperature Safe Operating Area 1000 120 10 ms *Limited by rDS(on) 100 I D − Drain Current (A) I D − Drain Current (A) 100 80 60 40 10 1 ms 1 20 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified TC − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 10 ms 100 ms dc TC = 25_C Single Pulse 0.1 0 1 100 ms Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72005. Document Number: 72005 S-42140—Rev. B, 15-Nov-04 www.vishay.com 5