SUM110N04-05H Vishay Siliconix N-Channel 40-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0053 at VGS = 10 V 110 95 • TrenchFET® Power MOSFET • 175 °C Junction Temperature • High Threshold Voltage at High Temperature RoHS COMPLIANT D TO-263 G G D S S Top View N-Channel MOSFET Ordering Information: SUM110N04-05H-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID IDM Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TA = 25 °Cc Operating Junction and Storage Temperature Range V 110 70 300 IAR 50 EAR 125 PD Unit 150b 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 1 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case PCB Mountc °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). Document Number: 73131 S-80274-Rev. B, 11-Feb-08 www.vishay.com 1 SUM110N04-05H Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 40 VGS(th) VDS = VGS, ID = 250 µA 3.4 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. 3.8 5.0 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125 °C 50 VDS = 40 V, VGS = 0 V, TJ = 175 °C 250 ID(on) VDS = 5 V, VGS = 10 V 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs µA 0.0053 0.008 VGS = 10 V, ID = 30 A, TJ = 175 °C 0.0106 20 nA A 0.0044 VGS = 10 V, ID = 30 A, TJ = 125 °C VDS = 15 V, ID = 15 A V 50 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time c td(on) c td(off) Rise Timec Turn-Off Delay Time tr Fall Timec 6700 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 600 320 95 VDS = 20 V, VGS = 10 V, ID = 50 A 37 f = 1.0 MHz 1.7 nC 21 VDD = 20 V, RL = 0.4 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω tf Ω 20 30 95 145 50 75 12 20 ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 100 Pulsed Current ISM 300 Forward Voltagea VSD IF = 30 A, VGS = 0 V 0.90 1.50 V trr IF = 30 A, di/dt = 100 A/µs 40 60 ns Continuous Current Reverse Recovery Time A Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73131 S-80274-Rev. B, 11-Feb-08 SUM110N04-05H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 250 VGS = 10 thru 8 V 200 7V I D - Drain Current (A) I D - Drain Current (A) 200 150 100 6V 50 150 100 TC = 125 °C 50 25 °C 5V - 55 °C 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 160 0.010 TC = - 55 °C 25 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 140 120 125 °C 100 80 60 40 0.008 0.006 VGS = 10 V 0.004 0.002 20 0 0.000 0 10 20 30 40 50 60 0 20 40 I D - Drain Current (A) 80 100 I D - Drain Current (A) Transconductance On-Resistance vs. Drain Current 8400 20 VGS - Gate-to-Source Voltage (V) Ciss 6300 C - Capacitance (pF) 60 4200 2100 Coss VDS = 20 V ID = 50 A 16 12 8 4 Crss 0 0 0 5 10 15 20 25 30 35 40 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 73131 S-80274-Rev. B, 11-Feb-08 200 www.vishay.com 3 SUM110N04-05H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 VGS = 10 V ID = 30 A I S - Source Current (A) (Normalized) rDS(on) - On-Resistance 1.7 1.4 1.1 TJ = 150 °C 10 TJ = 25 °C 0.8 1 - 25 0 25 50 75 100 125 150 175 0 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1000 54 100 51 IAV (A) at TJ = 25 °C 10 1 0.00001 0.0001 0.001 ID = 1 mA 48 45 IAV (A) at TJ = 150 °C 0.1 www.vishay.com 4 0.3 On-Resistance vs. Junction Temperature V(BR)DSS (V) I Dav (A) 0.5 - 50 0.01 0.1 1 42 - 50 - 25 0 25 50 75 100 125 tin (s) TJ - Junction Temperature (°C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 150 175 Document Number: 73131 S-80274-Rev. B, 11-Feb-08 SUM110N04-05H Vishay Siliconix THERMAL RATINGS 1000 125 10 µs 100 I D - Drain Current (A) I D - Drain Current (A) 100 75 50 25 100 µs 10 Limited by rDS(on)* 0 25 50 75 100 125 150 0.1 TC = 25 °C Single Pulse 0.001 0.1 175 TA - Ambient Temperature (°C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature 10 ms, 100 ms, DC 1 0.01 0 1 ms 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73131. Document Number: 73131 S-80274-Rev. B, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1