New Product Si4447ADY Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 11.8 nC APPLICATIONS SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D S • Load Switches, Adaptor Switch - Notebook PCs G Top View D Ordering Information: Si4447ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) - 5.7 ID TA = 25 °C - 5.5a, b - 4.4a, b Pulsed Drain Current IDM Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C - 3.5 - 2.1a, b IAS - 10 5 EAS TC = 25 °C 2.7 PD TA = 25 °C 2.5a, b W 1.6a, b TA = 70 °C Operating Junction and Storage Temperature Range mJ 4.2 TC = 70 °C Maximum Power Dissipation A - 20 IS TA = 25 °C L = 0.1 mH V - 7.2 TC = 70 °C TA = 70 °C Continuous Source-Drain Diode Current Unit TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter a, c Maximum Junction-to-Ambient Maximum Junction-to-Foot Symbol Typical Maximum t 10 s RthJA 40 50 Steady State RthJF 24 30 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 85 °C/W. d. Based on TC = 25 °C. Document Number: 67189 S10-2767-Rev. A, 29-Nov-10 www.vishay.com 1 New Product Si4447ADY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage V - 42 ID = - 250 µA mV/°C 4.6 VGS(th) VDS = VGS, ID = - 250 µA - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 55 °C -5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS - 10 V, VGS = - 10 V - 1.2 - 10 µA A VGS = - 10 V, ID = - 5 A 0.036 0.045 VGS = - 4.5 V, ID = - 4 A 0.050 0.062 VDS = - 10 V, ID = - 5 A 14 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time 970 VDS = - 20 V, VGS = 0 V, f = 1 MHz pF 95 VDS = - 20 V, VGS = - 10 V, ID = - 5 A VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A 25 38 11.8 18 3 VDD = - 20 V, RL = 4 ID - 5 A, VGEN = - 10 V, Rg = 1 1.0 5.5 11 7 14 12 24 30 60 tf 9 18 td(on) 44 80 td(off) tr td(off) nC 5.2 f = 1 MHz td(on) tr 120 VDD = - 20 V, RL = 4 ID - 5 A, VGEN = - 4.5 V, Rg = 1 tf 33 60 28 55 13 25 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C - 3.5 - 20 IS = - 2 A, VGS = 0 V - 0.76 - 1.2 A V Body Diode Reverse Recovery Time trr 27 50 ns Body Diode Reverse Recovery Charge Qrr 19 35 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 14 13 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67189 S10-2767-Rev. A, 29-Nov-10 New Product Si4447ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 30 V GS = 10 V thru 5 V 4 V GS = 4 V ID - Drain Current (A) ID - Drain Current (A) 24 18 12 3 2 T C = 25 °C 6 0 0.0 T C = 125 °C T C = - 55 °C 0 0.5 1.0 1.5 2.0 0 2.5 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 1600 0.08 1280 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1 V GS = 3 V V GS = 4.5 V 0.06 V GS = 10 V 0.04 0.02 5 Ciss 960 640 Coss 320 Crss 0.00 0 6 12 18 24 0 0.0 30 4.8 7.2 9.6 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 12.0 1.8 10 ID = 5 A ID = 5 A V GS = 10 V 8 V DS = 20 V 6 V DS = 10 V V DS = 30 V 4 1.5 (Normalized) RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 2.4 V GS = 4.5 V 1.2 0.9 2 0 0.0 5.1 10.2 15.3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 67189 S10-2767-Rev. A, 29-Nov-10 20.4 25.5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4447ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.20 ID = 5 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 T J = 150 °C 1 0.1 T J = 25 °C 0.12 0.08 T J = 125 °C T J = 25 °C 0.04 0.01 0.001 0.0 0.16 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 50 0.6 40 0.4 Power (W) VGS(th) Variance (V) ID = 250 μA ID = 1 mA 0.2 30 20 0 10 - 0.2 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 ID - Drain Current (A) 10 Limited by R DS(on)* 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 1s 10 s DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 67189 S10-2767-Rev. A, 29-Nov-10 New Product Si4447ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8.0 ID - Drain Current (A) 6.4 4.8 3.2 1.6 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 5 2.0 4 1.6 3 1.2 Power (W) Power (W) Current Derating* 2 0.8 0.4 1 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Foot 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67189 S10-2767-Rev. A, 29-Nov-10 www.vishay.com 5 New Product Si4447ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) 0.01 10 -4 Single Pulse 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67189. www.vishay.com 6 Document Number: 67189 S10-2767-Rev. A, 29-Nov-10 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000