SUM110P08-11L Vishay Siliconix P-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-263 S G Drain Connected to Tab G D S Top View D Ordering Information: SUM110P08-11L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 80 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TA = 25 °C - 71 ID - 23.5b, c - 13.6b, c TA = 125 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current TC = 25 °C TA = 25 °C L = 0.1 mH Single-Pulse Avalanche Energy TC = 125 °C TA = 25 °C - 110 IS - 9b, c IAS - 75 EAS 281 mJ 375 125 PD W 13.6b, c 4.5b, c TA = 125 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 120 TC = 25 °C Maximum Power Dissipation V - 110a TC = 25 °C TC = 125 °C Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) Symbol Typical Maximum t 10 s RthJA 8 11 Steady State RthJC 0.33 0.4 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 40 °C/W. Document Number: 73471 S12-3071-Rev. C, 24-Dec-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SUM110P08-11L Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 80 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = - 1 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 85 mV/°C - 5.5 -1 -3 V ± 100 nA VDS = - 80 V, VGS = 0 V -1 VDS = - 80 V, VGS = 0 V, TJ = 175 °C - 500 VDS 10 V, VGS = - 10 V - 120 µA A VGS = - 10 V, ID = - 20 A 0.0093 0.0112 VGS = - 4.5 V, ID = - 15 A 0.0120 0.0145 VDS = - 15 V, ID = - 20 A 85 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 10850 VDS = - 40 V, VGS = 0 V, f = 1 MHz 700 VDS = - 40 V, VGS = - 10 V, ID = - 110 A VDS = - 40 V, VGS = - 4.5 V, ID = - 110 A tr Rise Time td(off) Turn-Off Delay Time f = 1 MHz VDD = - 40 V, RL = 0.36 ID - 110 A, VGEN = - 10 V, Rg = 1 tf Fall Time 180 270 85 130 35 nC 42 td(on) Turn-On Delay Time pF 800 3.6 20 30 330 500 135 205 550 825 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C - 110 - 120 IS = - 20 A A - 0.8 - 1.5 Body Diode Reverse Recovery Time trr 65 100 ns Body Diode Reverse Recovery Charge Qrr 135 205 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C 43 22 V ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 73471 S12-3071-Rev. C, 24-Dec-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SUM110P08-11L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 200 VGS = 10 V thru 6 V 160 30 5V ID - (A) ID - (A) 120 80 20 25 °C 10 4V 40 TC = 125 °C - 55 °C 0 0 1 2 0 1 2 3 VDS - (V) VGS - (V) Output Characteristics Transfer Characteristics 0.025 15000 0.020 12000 4 Ciss VGS = 4.5 V 0.015 CAP - (pF) RDS - on (W ) 0 0.010 9000 Coss 6000 VGS = 10 V 0.005 3000 0.000 Crss 0 0 20 40 60 80 100 120 0 20 40 ID - (A) 80 VDS - (V) On-Resistance vs. Drain Current Capacitance 2.3 10 2.0 rDS(on) - (normalized) 8 VDS = 40 V VGS - (V) 60 6 VDS = 64 V 4 2 VGS = 10 V ID = 20 A 1.7 1.4 1.1 0.8 0 0 40 80 120 160 200 240 0.5 - 50 - 25 0 25 Qg - (nC) Gate Charge Document Number: 73471 S12-3071-Rev. C, 24-Dec-12 50 75 100 125 150 175 TJ - (°C) On-Resistance vs. Junction Temperature For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SUM110P08-11L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.06 100 0.05 TJ = 150 °C RDS - on (W ) IS - (A) ID = 20 A 25 °C 10 0.04 0.03 150 °C 0.02 0.01 25 °C 0 1 0 0.3 0.6 0.9 0 1.2 2 4 VSD - (V) Source-Drain Diode Forward Voltage 8 10 On-Resistance vs. Gate-to-Source Voltage 1.0 6000 0.8 5000 0.6 4000 Power (W) VGS(th) Variance (V) 6 VGS - (V) 0.4 ID = 1mA 0.2 2000 0.0 1000 - 0.2 - 0.4 - 50 3000 - 25 0 25 50 75 100 125 150 0 0.0001 175 0.001 0.01 TJ - (°C) 0.10 1 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Case (TC = 25 °C) 1000.0 400 Limited by r DS(on)* 350 300 10 µs 100.0 1 ms ID (A) Power (W) 100 µs 250 200 10.0 10 ms 150 100 ms, DC 1.0 100 Single Pulse Tc = 25 °C 50 0 25 50 75 100 125 150 TC Power Derating, Junction-to-Case www.vishay.com 4 175 0.1 0.1 100.0 1.0 10.0 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which rDS(on) is specified Safe Operating Area For technical questions, contact: [email protected] Document Number: 73471 S12-3071-Rev. C, 24-Dec-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SUM110P08-11L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000.0 120 100.0 Package Limited IDav - (A) ID - (A) 90 60 10.0 1.0 30 0 0.1 0 25 50 75 100 125 150 175 0.00001 0.0001 0.001 TC - (°C) Max. Avalanche and Drain Current vs. Case Temperature Normalized Effective Transient Thermal Impedance 0.01 0.1 1.0 tin - (s) Avalanche Current vs. Time 1.00 0.5 0.2 0.1 0.10 0.05 0.02 Single 0.01 0.0001 0.001 0.01 0.1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73471. Document Number: 73471 S12-3071-Rev. C, 24-Dec-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000