Si4472DY Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) a ID (A) 0.045 at VGS = 10 V 7.7 0.047 at VGS = 8 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 23 nC APPLICATIONS • Primary Side Switch SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4472DY-T1-E3 (Lead (Pb)-free) Si4472DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Limit 150 ± 20 7.7 6.1 5.5b, c 4.5b, c Operating Junction and Storage Temperature Range Unit V A 50 4.5 2.6b, c 20 20 5.9 3.8 3.1b, c 2b, c - 55 to 150 TJ, Tstg mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f t ≤ 10 s Maximum Junction-to-Foot (Drain) Steady State Symbol RthJA RthJF Typical 33 17 Maximum 40 21 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 °C/W. Document Number: 74283 S11-0209-Rev. C, 14-Feb-11 www.vishay.com 1 Si4472DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 150 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS /TJ VGS(th) Temperature Coefficient ΔVGS(th) /TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea a Forward Transconductance RDS(on) gfs V 172 mV/°C - 10 2.5 4.5 V ± 100 nA VDS = 150 V, VGS = 0 V 1 VDS = 150 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 10 V, VGS = 10 V 30 µA A VGS = 10 V, ID = 5 A 0.036 0.045 VGS = 8 V, ID = 5 A 0.0375 0.047 VDS = 15 V, ID = 5 A 23 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1735 VDS = 50 V, VGS = 0 V, f = 1 MHz tr pF 37 VDS = 75 V, VGS = 10 V, ID = 5 A 28.5 43 23 35 VDS = 75 V, VGS = 8 V, ID = 5 A 8 f = 1 MHz 0.85 1.3 14 21 VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 12 18 22 33 tf 6 10 td(on) 16 24 tr td(off) nC 6.5 td(on) td(off) 160 VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω tf 12 18 20 30 7 12 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 7.7 50 IS = 2.6 A IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.77 1.2 V 63 95 ns 110 165 nC 49 14 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % a. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74283 S11-0209-Rev. C, 14-Feb-11 Si4472DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.2 60 VGS = 10 V thru 7 V VGS = 6 V 0.9 I D - Drain Current (A) I D - Drain Current (A) 48 36 24 TC = 125 °C 0.6 TC = 25 °C 0.3 12 VGS = 5 V TC = - 55 °C 0 0.0 0 1 2 3 4 5 0 2 VDS - Drain-to-Source Voltage (V) 0.051 1600 C - Capacitance (pF) 2000 0.047 VGS = 8 V 0.043 VGS = 10 V Ciss 800 400 0.035 0 20 30 40 50 Coss Crss 0 60 20 ID - Drain Current (A) 40 60 80 100 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.5 10 ID = 5 A ID = 5 A VDS = 50 V VGS = 10 V 2.1 VDS = 75 V 6 VDS = 100 V 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1200 0.039 10 8 Transfer Characteristics 0.055 0 6 VGS - Gate-to-Source Voltage (V) Output Characteristics R DS(on) - On-Resistance (Ω) 4 1.7 VGS = 8 V 1.3 0.9 2 0 0 6 12 18 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74283 S11-0209-Rev. C, 14-Feb-11 24 30 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4472DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.20 I S - Source Current (A) 10 R DS(on) - Drain-to-Source On-Resistance (Ω) 100 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 ID = 5 A 0.16 0.12 TJ = 125 °C 0.08 TJ = 25 °C 0.04 0.00 0 0.2 0.4 0.6 0.8 1 0 1.2 2 VSD - Source-to-Drain Voltage (V) 10 160 Power (W) 0.5 VGS(th) (V) 8 200 1.0 ID = 5 mA - 0.5 - 1.0 - 1.5 - 50 6 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.0 4 VGS - Gate-to-Source Voltage (V) 120 80 40 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 Time (s) TJ - Temperature ( C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 1s 10 s DC 1 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified 0.1 * VGS Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74283 S11-0209-Rev. C, 14-Feb-11 Si4472DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 9 ID - Drain Current (A) 7 5 4 2 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 8.0 2.0 6.4 1.6 4.8 1.2 Power (W) Power (W) Current Derating* 3.2 0.8 0.4 1.6 0.0 0.0 0 25 50 75 100 125 150 50 75 100 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74283 S11-0209-Rev. C, 14-Feb-11 www.vishay.com 5 Si4472DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 10 1 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74283. www.vishay.com 6 Document Number: 74283 S11-0209-Rev. C, 14-Feb-11 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000