IRF9Z20, SiHF9Z20 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • -50 RDS(on) () VGS = -10 V Qg max. (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single S DESCRIPTION TO-220AB The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-channel power MOSFETs are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common N-channel power MOSFETs such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-channel power MOSFETs are intended for use in power stages where complementary symmetry with N-channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. G G D P-channel versatility Compact plastic package Fast switching Low drive current Ease of paralleling Excellent temperature stability Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S D P-Channel MOSFET ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF9Z20PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -50 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID IDM Linear Derating Factor Inductive Current, Clamped -9.7 -6.1 A -39 0.32 W/°C ILM -39 A IL -2.2 A TC = 25 °C PD 40 W TJ, Tstg -55 to +150 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) c V L = 100 μH Unclamped Inductive Current (Avalanche current) Maximum Power Dissipation UNIT for 10 s 300 °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. VDD = - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25 c. 0.063" (1.6 mm) from case. S16-0015-Rev. C, 18-Jan-16 Document Number: 90121 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z20, SiHF9Z20 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 80 Case-to-Sink, Flat, Greased Surface RthCS 1.0 - Maximum Junction-to-Case (Drain) RthJC - 3.1 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -50 - - V Static Drain-Source Breakdown Voltage VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V Gate-Source Leakage Gate-Source Threshold Voltage IGSS VGS = ± 20 V - - ± 500 nA Zero Gate Voltage Drain Current IDSS VDS = max. rating, VGS = 0 V - - -250 VDS = max. rating x 0,8, VGS = 0 V, TJ =125°C - - -1000 μA - 0.20 0.28 gfs VDS = 2 x VGS, IDS = -5.6 A b 2.3 3.5 - S Input Capacitance Ciss - 480 - Output Capacitance Coss - 320 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = -25 V, f = 1.0 MHz, see fig. 9 - 58 - Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = -5.6 A b VGS = -10 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS VGS = -10 V ID = -9.7 A, VDS = -0.8 max. rating. see fig. 17 VDD = -25 V, ID = -9.7 A, Rg = 18 , RD = 2.4, see fig. 16 (MOSFET switching times are essentially independent of operating temperature) Between lead, 6 mm (0.25") from package and center of die contact D G - 17 26 - 4.1 6.2 - 5.7 8.6 - 8.2 12 - 57 86 - 12 18 - 25 38 - 4.5 - - 7.5 - - - -9.7 - - -39 pF nC ns nH S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current a Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D G A S TJ = 25 °C, IS = - 9.7 A, VGS = 0 V b TJ = 25 °C, IF = - 9.7 A, dI/dt = 100 A/μs b - - -6.3 V 56 110 280 ns 0.17 0.34 0.85 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width 300 μs; duty cycle 2 %. S16-0015-Rev. C, 18-Jan-16 Document Number: 90121 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z20, SiHF9Z20 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS = - 10, - 8 V 103 80 µs Pulse Test Negative ID, Drain Current (A) Negative ID, Drain Current (A) 15 -7V 12 9 -6V 6 -5V 3 -4V 10 5 15 20 90121_01 100 µs 10 102 1 DC TC = 25 °C TJ = 150 °C Single Pulse 5 2 5 2 10 5 102 Negative VDS, Drain-to-Source Voltage (V) Fig. 4 - Maximum Safe Operating Area 5.0 gfs,Transconductance (S) 80 µs Pulse Test VDS < - 50 V 2 10 5 2 1 5 TJ = 150 °C 2 10 ms 2 90121_04 80 µs Pulse Test VDS = 2 x VGS 5 1 ms IRF9Z20, SiHF9Z20 IRF9Z22, SiHF9Z22 5 1 Fig. 1 - Typical Output Characteristics Negative ID, Drain Current (A) 10 µs 2 25 Negative VDS, Drain-to-Source Voltage (V) TJ = 25 °C 4.0 TJ = 150 °C 3.0 2.0 1.0 TJ = 25 °C 0.0 0.1 0 2 4 6 8 Negative IDR, Reverse Drain Current (A) -7V 9 -6V 6 -5V 3 -4V 0 0 1 2 3 4 Negative VDS, Drain-to-Source Voltage (V) Fig. 3 - Typical Saturation Characteristics S16-0015-Rev. C, 18-Jan-16 8 12 16 20 Fig. 5 - Typical Transconductance vs. Drain Current -8V VGS = - 10 12 4 Negative ID, Drain Current (A) 90121_06 Fig. 2 - Typical Transfer Characteristics 80 µs Pulse Test 0 10 Negative VGS, Gate-to-Source Voltage (V) 90121_02 Negative ID, Drain Current (A) IRF9Z20, SiHF9Z20 IRF9Z22, SiHF9Z22 5 0.1 0 90121_03 2 102 2 0 15 Operation in this area limited by RDS(on) 5 5 102 5 2 10 TJ = 150 °C 5 TJ = 25 °C 2 1 5 2 0.1 0 90121_07 2 4 6 8 10 Negative VSD, Source-to-Drain Voltage (V) Fig. 6 - Typical Source-Drain Diode Forward Voltage Document Number: 90121 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z20, SiHF9Z20 ID = 1 mA 1.15 1.05 0.95 0.85 0.75 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 90121_08 RDS(on), Drain-to-Source On Resistance RDS(on), Drain-to-Source On Resistance (Normalized) 2.4 1.8 1.2 0.6 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgs Cgd / (Cgs + Cgd) ≈ Cds + Cgd C, Capacitance (pF) 800 600 Ciss 400 Coss 200 Crss 0 1 90121_10 2 5 10 2 5 8 4 For test circuit see figure 17 0 0 8 16 24 32 40 QG, Total Gate Charge (nC) 2.0 80 µs Pulse Test 1.6 1.2 VGS = - 10 V 0.8 0.4 VGS = - 20 V 0.0 0 8 16 24 32 40 Negative ID, Drain Current (A) Fig. 11 - Typical On-Resistance vs. Drain Current 10 8 IRF9Z20, SiHF9Z20 6 IRF9Z22, SiHF9Z22 4 2 0 102 Negative VDS, Drain-to-Source Voltage (V) Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage S16-0015-Rev. C, 18-Jan-16 VSD = - 40 V 12 90121_12 Fig. 8 - Normalized On-Resistance vs. Temperature 1000 16 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 90121_09 ID = - 9.7 A Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage ID = - 9.7 A VGS = - 10 V 0.0 - 60 - 40 - 20 0 20 90121_11 Fig. 7 - Breakdown Voltage vs. Temperature 3.0 Negative VGS, Gate-to-Source Voltage (V) 1.25 Vishay Siliconix Negative ID, Drain Current (A) BVDSS, Drain-to-Source Breakdown Voltage (Normalized) www.vishay.com 25 90121_13 50 75 100 125 150 TC, Case Temperature (°C) Fig. 12 - Maximum Drain Current vs. Case Temperature Document Number: 90121 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z20, SiHF9Z20 www.vishay.com Vishay Siliconix Fig. 13a - Unclamped Inductive Test Circuit Fig. 13b - Unclamped Inductive Load Test Waveforms Thermal Response (ZthJC) 10 D = 0.5 1 0.2 0.1 PDM 0.05 0.1 0.02 0.01 t1 Single Pulse (Thermal Response) t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 10-4 90121_05 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Fig. 15 - Switching Time Test Circuit S16-0015-Rev. C, 18-Jan-16 Fig. 16 - Gate Charge Test Circuit Document Number: 90121 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z20, SiHF9Z20 www.vishay.com Vishay Siliconix Random Failure Rate (FIT) 14 V 1010 108 18 V 106 20 V 104 60 % UCL 103 0.1 90 % UCL 99 % UCL 102 10-2 20 FIT’s 10 10-3 1 102 50 70 90121_18 90 110 130 50 150 Temperature (°C) Fig. 17 - Typical Time to Accumulated 1 % Gate Failure 90121_19 70 90 110 130 % Per 1000 Hours 16 V Time (H) 1 104 1012 10-4 150 Temperature (°C) Fig. 18 - Typical High Temperature Reverse Bias (HTRB) Failure Rate Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90121. S16-0015-Rev. C, 18-Jan-16 Document Number: 90121 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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