IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements Qgd (nC) Configuration Single • Compliant to RoHS Directive 2002/95/EC S DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. G G D COMPLIANT S D P-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF9620PbF SiHF9620-E3 IRF9620 SiHF9620 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current Pulsed Drain VGS at - 10 V TC = 25 °C TC = 100 °C Currenta ID IDM Linear Derating Factor Maximum Power Dissipation Peak Diode Recovery TC = 25 °C dV/dtb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw UNIT V - 3.5 - 2.0 A - 14 0.32 W/°C 40 W dV/dt - 5.0 V/ns TJ, Tstg - 55 to + 150 PD 300c °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. ISD - 3.5 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C. c. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91082 S11-0512-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620, SiHF9620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 3.1 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 200 - - V VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.22 - V/°C VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 200 V, VGS = 0 V - - - 100 VDS = - 160 V, VGS = 0 V, TJ = 125 °C - - - 500 - - 1.5 1.0 - - S - 350 - - 100 - - 30 - - - 22 VDS Temperature Coefficient Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = - 1.5 Ab VGS = - 10 V VDS = - 50 V, ID = - 1.5 Ab μA Dynamic Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 pF Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 12 Gate-Drain Charge Qgd - - 10 Turn-On Delay Time td(on) - 15 - tr - 25 - - 20 - - 15 - - 4.5 - - 7.5 - - - - 3.5 - - - 14 - - - 7.0 - 300 450 ns - 1.9 2.9 μC Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance td(off) VGS = - 10 V ID = - 4.0 A, VDS = - 160 V, see fig. 11 and 18b VDD = - 100 V, ID = - 1.5 A, Rg = 50 , RD = 67, see fig. 17b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact D nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = - 3.5 A, VGS = 0 S Vb TJ = 25 °C, IF = - 3.5 A, dI/dt = 100 A/μsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 91082 S11-0512-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620, SiHF9620 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) -5 -5 80 µs Pulse Test -4 ID, Drain Current (A) ID, Drain Current (A) VGS = - 10, - 9, - 8, - 7 V -6V -3 -2 -5V -1 VGS = - 10, - 9, - 8, - 7 V -4 -3 -6V -2 -5V -1 80 µs Pulse Test -4V -4V 0 0 - 20 - 10 0 - 30 - 40 - 50 VDS, Drain-to-Source Voltage (V) 91082_01 Negative ID, Drain Current (A) ID, Drain Current (A) 102 TJ = 25 °C TJ = 125 °C -3 -2 -1 80 µs Pulse Test VDS > ID(on) x RDS(on) max. 0 -2 0 -4 -6 -8 -5 2 10 100 µs 5 1 ms 2 1 10 ms 5 TC = 25 °C TJ = 150 °C Single Pulse 2 0.1 2 1 5 10 2 5 2 102 5 103 Negative VDS, Drain-to-Source Voltage (V) 91082_04 Fig. 2 - Typical Transfer Characteristics ZthJC(t)/RthJC, Normalized Effective Transien Thermal Impedence (Per Unit) -4 Operation in this area limited by RDS(on) 5 - 10 VGS, Gate-to-Source Voltage (V) 91082_02 -3 Fig. 3 - Typical Saturation Characteristics TJ = - 55 °C -4 -2 VDS, Drain-to-Source Voltage (V) 91082_03 Fig. 1 - Typical Output Characteristics -5 -1 0 Fig. 4 - Maximum Safe Operating Area 2.0 1.0 0.5 0.2 0.1 D = 0.5 PDM 0.2 0.1 t1 0.05 0.05 t2 0.02 0.01 Single Pulse (Transient Thermal Impedence) 0.02 0.01 10-5 91082_05 Notes: 1. Duty Factor, D = t1/t2 2. Per Unit Base = RthJC = 3.12 °C/W 3. TJM - TC = PDM ZthJC(t) 2 5 10-4 2 5 10-3 2 5 10-2 2 5 0.1 2 5 1.0 2 5 10 t1, Square Wave Pulse Duration (s) Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Document Number: 91082 S11-0512-Rev. B, 21-Mar-11 www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620, SiHF9620 RDS(on), Drain-to-Source On Resistance (Normalized) Vishay Siliconix 4.0 gfs,Transconductance (S) 80 µs Pulse Test VDS > ID(on) x RDS(on) max. 3.2 TJ = - 55 °C 2.4 TJ = 25 °C TJ = 125 °C 1.6 0.8 0.0 0 -1 -2 -3 -4 -5 ID, Drain Current (A) 91082_06 2.0 1.5 1.0 0.5 0.0 - 40 40 80 120 160 TJ, Junction Temperature (°C) 500 - 10 Ciss C, Capacitance (pF) 400 -5 -2 - 1.0 0 Fig. 9 - Normalized On-Resistance vs. Temperature - 20 TJ = 150 °C TJ = 25 °C - 0.5 300 Coss 200 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd C ,C Coss = Cds + gs gd Cgs + Cgd ≈ Cgs + Cgd Crss 100 - 0.2 - 0.1 - 2.0 0 - 3.2 - 4.4 - 5.6 - 6.8 VSD, Source-to-Drain Voltage (V) 91082_07 1.25 1.15 1.05 0.95 0.85 0 40 80 120 160 TJ, Junction Temperature (°C) 91082_08 Fig. 8 - Breakdown Voltage vs. Temperature www.vishay.com 4 - 20 - 30 - 40 - 50 VDS, Drain-to-Source Voltage (V) 91082_10 Fig. 7 - Typical Source-Drain Diode Forward Voltage 0.75 - 40 - 10 0 - 8.0 Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage Negative VGS, Gate-to-Source Voltage (V) IDR, Reverse Drain Current (A) ID = - 1.0 A VGS = - 10 V 91082_09 Fig. 6 - Typical Transconductance vs. Drain Current BVDSS, Drain-to-Source Breakdown Voltage (Normalized) 2.5 91082_11 20 ID = - 3.5 A VDS = - 100 V VDS = - 60 V 16 VDS = - 40 V 12 8 4 For test circuit see figure 18 0 0 4 8 12 16 20 QG, Total Gate Charge (nC) Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91082 S11-0512-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620, SiHF9620 Vishay Siliconix L RDS(on), Drain-to-Source On Resistance (Ω) 5 Vary tp to obtain required IL RDS(on) measured with current pulse of 2.0 µs duration. Initial TJ = 25 °C. (Heating effect of 2.0 µs pulse is minimal.) 4 VGS = - 10 V V DD + D.U.T. tp EC 0.05 Ω VGS = - 10 V 3 VDS IL VDD = 0.5 VDS EC = 0.75 VDS Fig. 15 - Clamped Inductive Test Circuit 2 VGS = - 20 V 1 VDD 0 0 -4 -8 - 12 - 16 - 20 IL ID, Drain Current (A) 91082_12 tp Fig. 12 - Typical On-Resistance vs. Drain Current VDS EC Fig. 16 - Clamped Inductive Waveforms Negative ID, Drain Current (A) 3.5 3.0 2.5 RD 2.0 VDS 1.5 VGS D.U.T. RG 1.0 +VDD 0.5 - 10 V 0.0 25 50 75 100 125 150 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % TC, Case Temperature (°C) 91082_13 Fig. 13 - Maximum Drain Current vs. Case Temperature Fig. 17a - Switching Time Test Circuit 40 PD, Power Dissipation (W) 35 30 td(on) 25 VGS 20 10 % tr td(off) tf 15 10 90 % VDS 5 0 0 91082_14 20 40 60 80 100 120 140 TC, Case Temperature (°C) Fig. 14 - Power vs. Temperature Derating Curve Document Number: 91082 S11-0512-Rev. B, 21-Mar-11 Fig. 17b - Switching Time Waveforms www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620, SiHF9620 Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG - 15 V 0.2 µF 12 V 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 18a - Basic Gate Charge Waveform Fig. 18b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg + • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive Period P.W. D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Re-applied voltage Inductor current Diode recovery dV/dt VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 19 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91082. www.vishay.com 6 Document Number: 91082 S11-0512-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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