IRF9Z30, SiHF9Z30 Datasheet

IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
- 50
RDS(on) ()
VGS = - 10 V
0.14
Qg (Max.) (nC)
39
Qgs (nC)
10
Qgd (nC)
15
Configuration
Single
S
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
TO-220AB
DESCRIPTION
G
G
D
P-Channel Versatility
Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
Excellent Temperature Stability
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The p-channel power MOSFET’s are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common n-channel Power MOSFET’s such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.
P-channel power MOSFETs are intended for use in power
stages where complementary symmetry with n-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF9Z30PbF
SiHF9Z30-E3
IRF9Z30
SiHF9Z30
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 50
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
Inductive Current, Clamped
Unclamped Inductive Current (Avalanche Current)
Maximum Power Dissipation
TC = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
V
- 18
- 11
A
- 60
0.59
L = 100 μH
UNIT
W/°C
ILM
- 60
A
IL
- 3.1
A
PD
74
W
TJ, Tstg
- 55 to + 150
300c
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25 
c. 0.063" (1.6 mm) from case.
S12-3048-Rev. A, 24-Dec-12
Document Number: 91459
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
80
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = - 250 μA
- 50
-
-
V
VGS(th)
VDS = VGS, ID = - 250 μA
- 2.0
-
- 4.0
V
nA
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
VGS = ± 20 V
-
-
± 500
VDS = max. rating, VGS = 0 V
-
-
- 250
VDS = max. rating x 0.8, VGS = 0 V,
TJ =125 °C
-
-
- 1000
-
0.093
0.14

3.1
4.7
-
S
-
900
-
-
570
-
-
140
-
-
26
39
-
6.9
10
-
9.7
15
IGSS
IDSS
RDS(on)
gfs
VGS = - 10 V
ID = - 9.3 Ab
VDS = 2 x VGS, IDS = - 9
Ab
μA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 9
VGS = - 10 V
ID = - 18 A, VDS = - 0.8
max. rating. see fig. 17
VDD = - 25 V, ID = - 18 A,
Rg = 13 , RD = 1.3, see fig. 16
(MOSFET switching times are
essentially independent of operating
temperature)
pF
nC
-
12
18
-
110
170
-
21
32
-
64
96
-
-
- 18
-
-
- 60
-
-
- 6.3
V
54
120
250
ns
0.20
0.47
1.1
μC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
MOSFET symbol
showing the 
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 18 A, VGS = 0 Vb
TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/μsb
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width  300 μs; duty cycle  2 %.
S12-3048-Rev. A, 24-Dec-12
Document Number: 91459
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
25
- 10 V
-8V
15
-7V
10
VGS = - 5 V
- ID, Drain Current (A)
20
- ID, Drain Current (A)
80 μs Pulse Test
80 μs Pulse Test
20
- 10 V
15
-8V
10
-7V
VGS = - 5 V
5
5
-5V
-4V
0
0
5
10
15
20
-5V
-4V
0
25
0
- VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
102
- ID, Drain Current (A)
- ID, Drain Current (A)
Operation in this Area Limited
by RDS(on)
5
10
5
2
1
5
TJ = 150 °C
TJ = 25 °C
2
102
SiHF9Z30
5
SiHF9Z32
SiHF9Z32
10
4
6
8
- VGS, Gate-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
S12-3048-Rev. A, 24-Dec-12
10
1 μs
5
10 μs
TC = 25 °C
TJ = 150 °C
Single Pulse
1
2
10 μs
100 μs
SiHF9Z30
2
2
0.1
0
5
103
2
2
4
Fig. 3 - Typical Saturation Characteristics
80 µs Pulse Test
VDS = 2 x VGS
5
3
2
1
- VDS, Drain-to-Source Voltage (V)
1
2
DC
5
10
2
5
102
- VDS, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
Document Number: 91459
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z30, SiHF9Z30
www.vishay.com
10
Vishay Siliconix
1.25
VDS, Drain-to-Source Breakdown
Voltage (Normalized)
80 μs Pulse Test
VDS = 2 x VGS
gfs, Transconductance (S)
8
6
TJ = 25 ° C
4
TJ = 150 °C
2
4
12
8
20
15
1.15
1.05
0.95
0.85
0.75
- 60 - 40 - 20 0
0
0
- ISD, Reverse Drain Current (A)
102
5
2
TJ = 150 °C
5
2
1
TJ = 25 °C
2
0.1
0
2
4
6
8
10
- VSD, Source-to-Drain Voltage (V)
Fig. 6 - Typical Source-Drain Diode Forward Voltage
S12-3048-Rev. A, 24-Dec-12
Fig. 7 - Breakdown Voltage vs. Temperature
RDS(on), Drain-to-Source On Resistance
(Normalized)
Fig. 5 - Typical Transconductance vs. Drain Current
5
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
- ID, Drain Current (A)
10
ID = 1 mA
3.0
ID = - 18 A
VGS = - 10 V
2.4
1.8
1.2
0.6
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 8 - Normalized On-Resistance vs. Temperature
Document Number: 91459
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
1600
Capacitance (pF)
RDS(on), Drain to Source on Resistance
2000
1200
Ciss
Coss
800
400
Crss
0
2.0
80 μs Pulse Test
1.6
1.2
VGS = - 10 V
0.8
0.4
VGS = - 20 V
0.0
1
2
10
5
5
2
102
0
12
36
48
60
- ID, Drain Current (A)
- VDS, Drain-to-Source Voltage (V)
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
20
20
ID = - 18 A
- ID, Drain Current (A)
- VGS, Gate-to-Source Voltage (V)
24
16
VDS = - 40 V
12
8
4
16
SiHF9Z30
12
SiHF9Z32
8
4
For test circuit
see figure 17
0
25
0
0
10
20
30
40
50
50
75
100
125
150
TC, Case Temperature (°C)
Qg, Total Gate Charge (nC)
Fig. 12 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage

S12-3048-Rev. A, 24-Dec-12
Document Number: 91459
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z30, SiHF9Z30
www.vishay.com
Vary tp to obtain
required peak IL
Vishay Siliconix
L
VDSS
DUT
tp
VGS = - 10 V
VDD
VDD
IL
+
EC
0.05 Ω
IL
VDD = 0 5 8 VDS
tp
VDS
EC = 0 75 BVDS
Fig. 13b - Unclamped Inductive Load Test Waveforms
Fig. 13a - Unclamped Inductive Test Circuit
Thermal Response (ZthJC)
10
1
0 = 0.5
0.2
PDM
0.1
0.05
0.02
0.1
t1
Single Pulse
(Thermal Response)
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
0.01
10-2
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
- VDS
(Isolated
supply)
Current
regulator
RD
12 V
battery
Same type
as D.U.T
50 kΩ
0.2 μF
0.3 μF
Vary IP to obtain
required peak IL
VGS = - 10 V
D.U.T
RG
+
D
PS
G
D.U.T
- 1.5 mA
S
tp
+ VDS
IG
Current
sampling
resistor
Fig. 15 - Switching Time Test Circuit
ID
Current
sampling
resistor
Fig. 16 - Gate Charge Test Circuit









Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91459.
S12-3048-Rev. A, 24-Dec-12
Document Number: 91459
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000