FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET tm Features General Description Q1: Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V. Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Applications Q2: Level shifting N-Channel Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA P-Channel Max rDS(on) = 8Ω at VGS = -4.5V, ID = -150mA Power Supply Converter Circuits Max rDS(on) = 12Ω at VGS = -2.5V, ID = -125mA Load/Power Switching Cell Phones, Pagers Max rDS(on) = 15Ω at VGS = -1.8V, ID = -100mA ESD protection diode (note 3) RoHS Compliant 6 5 4 1 S2 4 3 D2 G2 5 2 G1 6 1 S1 D1 2 3 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID Q1 20 -Continuous (Note 1a) -Pulsed Power Dissipation (Steady State) PD TJ, TSTG (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Q2 -20 Units V ±12 ±8 V 200 -150 1000 -1000 625 446 -55 to 150 mA mW °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 200 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 280 °C/W Package Marking and Ordering Information Device Marking F Device FDY4001CZ ©2006 Fairchild Semiconductor Corporation FDY4001CZ Rev. B Package SC89-6 1 Reel Size 7” Tape Width 8mm Quantity 3000units www.fairchildsemi.com FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET August 2006 Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ID = -250µA, VGS = 0V Q1 Q2 20 -20 ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 16V, VDS =0V VDS = -16V, VDS =0V Q1 Q2 1 -3 µA IGSS Gate-Body Leakage VGS = ±12V, VDS = 0V VGS = ±4.5V, VDS = 0V VGS = ±8V, VDS = 0V Q1 Q1 Q2 ±10 ±1 ±10 µA 1.5 -1.5 V V 14 -15 mV/°C On Characteristics (note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA VGS = VDS, ID = -250µA Q1 Q2 0.6 -0.65 -1.0 ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 2.8 -3 rDS(on) gFS Drain to Source On Resistance Forward Transconductance VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 175mA VGS = 1.8V, ID = 150mA VGS = 1.5V, ID = 20mA VGS = 4.5V, ID = 200mA,TJ = 125°C mV/°C Q1 5 7 9 10 7 VGS = -4.5V, ID = --150mA VGS = -2.5V, ID = -125mA VGS = -1.8V, ID = -100mA VGS = -1.5V, ID = -30mA VGS = -4.5V, ID = -150mA,TJ =125°C Q2 8 12 15 20 12 VDS = 5V, ID = 200mA VDS = -5V, ID = -150mA Q1 Q2 1.1 0.7 S Q1 VDS = 10V, VGS = 0V, f = 1MHz Q1 Q2 60 100 pF Q1 Q2 20 30 pF Q1 Q2 10 15 pF Q1 VDD= 10V, ID = 1A, VGS= 4.5V, Rg = 6Ω Q1 Q2 6 6 12 12 ns Q1 Q2 8 13 16 23 ns Q2 VDD= -10V, ID = -0.5A, VGS= -4.5V, Rg = 6Ω Q1 Q2 8 8 16 16 ns Q1 Q2 2.4 1 4.8 2 ns Q1 Q2 0.8 1.0 1.1 1.4 nC Q1 Q2 0.16 0.2 nC Q1 Q2 0.26 0.3 nC Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Q2 VDS = -10V, VGS = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge Q1 VDS= 10V, ID = 200mA, VGS= 4.5V Q2 VDS= -10V, ID = -150mA, VGS= -4.5V 2 FDY4001CZ Rev. B www.fairchildsemi.com FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unlessotherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.7 -0.8 1.2 -1.2 V Q1 Q2 12 11 ns Q1 Q2 3 2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Volt- VGS = 0V, IS = 150mA (Note 2) age VGS = 0V, IS = -150mA (Note 2) trr Reverse Recovery Time Qrr Reverse Recovery Charge Q1 IF = 200mA, di/dt = 100A/µs Q2 IF = -150mA, di/dt = 100A/µs Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. b) 280°C/W when mounted on a minimum pad of 2 oz copper a) 200°C/W when mounted on a 1 in2 pad of 2 oz copper Scale 1:1 on letter size paper 2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 3 FDY4001CZ Rev. B www.fairchildsemi.com FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = 4.5V 3.5V 3.0V 0.8 R D S(O N ), N O R M A LIZED DR AIN -SO UR CE ON -RESISTANC E ID , DRAIN CURRENT (A) 1 2.5V 2.0V 0.6 1.8V 0.4 0.2 1.5V 0 0 0.25 0.5 0.75 3.4 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 1 VGS = 1.8V 2.0V 2.5V 4.5V 0 0.2 0.4 VDS, DRAIN-SOURCE VOLTAGE (V) 1 1 ID = 200mA VGS = 4.5V R DS(ON), ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.8 Figure 2. Normalized on-Resistance vs. Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 ID = 100mA 0.9 0.8 0.7 0.6 o TA = 125 C 0.5 0.4 o TA = 25 C 0.3 0.2 -25 0 25 50 75 100 125 150 1 2 TJ, JUNCTION TEMPERATURE (oC) 3 5 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized on-Resistance vs. Temperature. Figure 4. On-Resistance vs. Gate-to-Source Votlage. 1 1.5 o I S , REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 0.6 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 0.6 -50 3.5V 3.0V 25 C TA = -55oC 1.2 125oC 0.9 0.6 0.3 0 0.5 0.1 o TA = 125 C 0.01 o 25 C o -55 C 0.001 0.0001 1 1.5 2 2.5 3 0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Source to Drain Diode Forward Voltage vs. Source Current and Temperature. 4 FDY4001CZ Rev. B VGS = 0V www.fairchildsemi.com FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET Typical Characteristics Q1 (N-Channel) 100 ID = 600mA f = 1MHz VGS = 0 V 90 4 80 10V VDS = 5V 3 CA PA CITA NC E (pF) V GS , GATE-SOURCE VOLTAGE (V) 5 15V 2 70 Ciss 60 50 40 Coss 30 20 1 Crss 10 0 0 0 0.2 0.4 0.6 0.8 0 1 4 Figure 7. Gate Charge Characteristics. 16 20 P(pk), PEAK TRANSIENT POW ER (W) 30 RDS(ON) LIMIT 1 1ms 10ms VGS = 4.5V SINGLE PULSE RθJA = 280oC/W 0.1 100ms 10s 1s DC TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 280°C/W TA = 25°C 25 20 15 10 5 0 0.0001 100 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 12 Figure 8. Capacitance vs. Drain to source voltage. 10 ID , DRAIN CURRENT (A) 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation. 1 D=0.5 0.2 0.1 0.05 0.02 0.01 RθJA(t) = r(t) * RθJA RθJA =280 °C/W P(pk) 0.1 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 5 FDY4001CZ Rev. B www.fairchildsemi.com FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET Typical Characteristics Q1 (N-Channel) 1 5 VGS=-1.5V -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS= -4.5V 0.8 -3.5V -3.0V 0.6 -2.0V 0.4 -1.8V 0.2 -1.5V 0 0.5 1 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 2 -2.0V -2.5V -3.0V 1 0 2 Figure 1. On-Region Characteristics. -3.5V -4.5V 0.2 0.4 0.6 -ID, DRAIN CURRENT (A) 0.8 1 Figure 2. Normalized on-Resistance vs. Drain Current and Gate Voltage. 1.6 2 ID = -0.15A VGS = -4.5V ID = -0.075A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -1.8V 3 0 0 1.4 1.2 1 0.8 0.6 1.75 1.5 1.25 TA = 125oC 1 0.75 o TA = 25 C 0.5 0.25 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. Normalized on-Resistance vs. Temperature. 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs. Gate-to-Source Voltage. 1 1 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 4 0.8 0.6 0.4 o TA = 125 C -55oC 0.2 25oC 0 VGS = 0V 0.1 0.01 TA = 125oC 25oC 0.001 -55oC 0.0001 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0 Figure 5. Transfer Characteristics. 1.4 Figure 6. Source to Drain Diode Forward Voltage vs. Source Current and Temperature. 6 FDY4001CZ Rev. B 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) www.fairchildsemi.com FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET Typical Characteristics Q2 (P-Channel) 10 150 f = 1 MHz VGS = 0 V 125 8 VDS = -5V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) ID = -0.15A -15V 6 -10V 4 100 2 Ciss 75 50 Coss 25 Crss 0 0 0 0.5 1 1.5 Qg, GATE CHARGE (nC) 2 0 2.5 Figure 7. Gate Charge Characteristics. 20 10 P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs. Drain to source voltage. 10 100µs 1 RDS(ON) LIMIT 0.1 1ms 10ms 100ms 1s 10s DC VGS = -4.5V SINGLE PULSE RθJA = 280oC/W TA = 25oC 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE °C/W RθJA = 280癈 /W TA = 25癈 °C 8 6 4 2 0 0.0001 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIEN THERMAL RESISTANCE 4 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA(t) = r(t) * R θJA RθJA =280°C 癈 /W 0.2 0.1 P(pk) 0.1 0.05 t1 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b.Transient thermal response will change depending on the circuit board design. 7 FDY4001CZ Rev. B www.fairchildsemi.com FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET Typical Characteristics Q2 (P-Channel) 1.70 1.50 6 0.50 0.30 0.15 0.50 4 1.70 1.55 1.20 BSC 1 1.25 1.80 3 (0.20) 0.30 0.50 0.55 LAND PATTERN RECOMMENDATION 1.00 0.60 0.56 0.18 0.10 SEE DETAIL A 0.35 BSC 0.20 BSC 0.10 0.00 DETAIL A SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. 8 FDY4001CZ Rev. B www.fairchildsemi.com FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20