Switching Diodes MA2J116 Silicon epitaxial planar type Unit : mm • Small S-mini type package, allowing high-density mounting • Soft recovery characteristic (trr = 100 ns) Rating Unit VR 40 V Peak reverse voltage VRM 40 V Average forward current IF(AV) 100 mA Peak forward current IFM 225 mA Non-repetitive peak forward surge current* IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Noe) 0.7 ± 0.1 + 0.1 0.16 − 0.06 Symbol Reverse voltage (DC) 1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.3 0.5 ± 0.1 ■ Features A 0.625 K 1.25 ± 0.1 For general purpose 0.4 ± 0.1 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 1H * : t=1s ■ Electrical Characteristics Ta = 25°C Parameter Symbol Reverse current (DC) Conditions Min Typ Max Unit IR1 VR = 15 V 5 nA IR2 VR = 40 V 10 nA IR3 VR = 35 V, Ta = 100°C 100 µA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 6 V, f = 1 MHz 2.0 pF Forward dynamic resistance*1 rf IF = 3 mA, f = 30 MHz 3.6 Ω trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 100 ns Reverse recovery time*2 35 V 1.0 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : YHP 4191A PF IMPEDANCE ANALYZER *2 : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA2J116 Switching Diodes IF VF IR V R 1 000 VF Ta 10 1.6 Ta = 150°C 1.4 Ta = 150°C 100°C 10 25°C − 20°C 1 1 Forward voltage VF (V) Reverse current IR (nA) Forward current IF (mA) 100 100°C 0.1 25°C 0.01 1.2 1.0 IF = 100 mA 0.8 10 mA 0.6 3 mA 0.4 0.1 0.2 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 Forward voltage VF (V) 10 20 40 IR Ta Terminal capacitance Ct (pF) 0.1 0.01 2.4 2.0 1.6 1.2 0.8 0.4 0.001 −40 0 40 80 120 160 Ambient temperature Ta (°C) 2 200 0 0 5 10 15 20 25 30 35 Reverse voltage VR (V) 0 −40 0 40 80 120 160 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 2.8 15 V 6V 1 60 Ct VR 3.2 VR = 30 V 50 Reverse voltage VR (V) 10 Reverse current IR (nA) 30 40 200