IRFL210, SiHFL210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Surface mount Available in tape and reel Dynamic dV/dt rating Repetitive avalanche rated Fast switching Available Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. SOT-223 D G G D S S N-Channel MOSFET Marking code: FC ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free and Halogen-free SiHFL210-GE3 SiHFL210TR-GE3 a Lead (Pb)-free IRFL210PbF IRFL210TRPbF a SiHFL210-E3 SiHFL210T-E3 a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 VGS at 10 V Continuous Drain Current TC = 25 °C TC = 100 °C Pulsed Drain Current a ID IDM UNIT V 0.96 0.6 A 7.7 Linear Derating Factor 0.025 Linear Derating Factor (PCB Mount) e 0.017 W/°C Single Pulse Avalanche Energy b EAS 50 Repetitive Avalanche Current a IAR 0.96 A Repetitive Avalanche Energy a EAR 0.31 mJ Maximum Power Dissipation Maximum Power Dissipation (PCB TC = 25 °C Mount) e TA = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range for 10 s Soldering Recommendations (Peak Temperature) d Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 81 mH, RG = 25 , IAS = 0.96 A (see fig. 12). c. ISD 3.3 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S14-1685-Rev. E, 18-Aug-14 PD 3.1 2.0 dV/dt 5.0 TJ, Tstg -55 to +150 300 mJ W V/ns °C Document Number: 91193 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFL210, SiHFL210 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient (PCB Mount) a PARAMETER RthJA - - 40 Maximum Junction-to-Case (Drain) RthJC - - 60 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 μA 200 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.30 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance Forward Transconductance μA - - 1.5 gfs VDS = 50 V, ID = 0.58 A 0.51 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 140 - - 53 - - 15 - - - 8.2 - - 1.8 RDS(on) ID = 0.58 A b VGS = 10 V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss pF Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 4.5 Turn-On Delay Time td(on) - 8.2 - tr - 17 - - 14 - - 8.9 - - 4.0 - - 6.0 - - - 0.96 S - - 7.7 TJ = 25 °C, IS = 0.96 A, VGS = 0 V b - - 2.0 V - 150 310 ns - 0.60 1.4 μC Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance td(off) VGS = 10 V ID = 3.3 A, VDS = 160 V, see fig. 6 and 13 b VDD = 100 V, ID = 3.3 A, Rg = 24 , RD = 30 , see fig. 10 b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S14-1685-Rev. E, 18-Aug-14 Document Number: 91193 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFL210, SiHFL210 www.vishay.com Vishay Siliconix 101 VGS ID, Drain Current (A) Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 100 10-1 4.5 V 20 µs Pulse Width TC = 25 °C 100 10-1 101 VDS, Drain-to-Source Voltage (V) 91193_01 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.5 ID = 3.3 A 3.0 VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 91193_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C 0 Fig. 4 - Normalized On-Resistance vs. Temperature 300 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 100 250 4.5 V 10-1 Capacitance (pF) ID, Drain Current (A) Top 100 Coss 100 Crss 0 101 100 VDS, Drain-to-Source Voltage (V) 91193_02 Ciss 150 50 20 µs Pulse Width TC = 150 °C 10-1 200 VDS, Drain-to-Source Voltage (V) 91193_05 Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 150 °C 25 °C 10-1 10-2 20 µs Pulse Width VDS = 50 V 4 91193_03 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S14-1685-Rev. E, 18-Aug-14 VGS, Gate-to-Source Voltage (V) ID, Drain Current (A) 20 100 101 ID = 3.3 A VDS = 160 V 16 VDS = 100 V VDS = 40 V 12 8 4 For test circuit see figure 13 0 10 0 91193_06 2 4 6 8 10 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91193 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFL210, SiHFL210 www.vishay.com Vishay Siliconix 1.0 ID, Drain Current (A) ISD, Reverse Drain Current (A) 101 150 °C 100 25 °C 0.6 0.4 0.2 VGS = 0 V 10-1 0.4 0.8 1.2 1.6 0.0 2.0 25 VSD, Source-to-Drain Voltage (V) 91193_07 102 50 100 125 150 Fig. 9 - Maximum Drain Current vs. Case Temperature RD VDS Operation in this area limited by RDS(on) 5 75 TC, Case Temperature (°C) 91193_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID, Drain Current (A) 0.8 VGS 2 D.U.T. Rg + - VDD 10 5 10 V 100 µs 2 1 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1 ms Fig. 10a - Switching Time Test Circuit 5 TC = 25 °C TJ = 150 °C Single Pulse 2 0.1 1 2 5 10 ms VDS 10 5 2 102 2 5 90 % 103 VDS, Drain-to-Source Voltage (V) 91193_08 Fig. 8 - Maximum Safe Operating Area 10 % VGS td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 102 0 - 0.5 10 1 0.2 0.1 0.05 0.02 PDM 0.01 Single Pulse (Thermal Response) t1 0.1 10-2 10-5 91193_11 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-4 10-3 10-2 0.1 1 10 102 103 t1, Rectangular Pulse Duration (S) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S14-1685-Rev. E, 18-Aug-14 Document Number: 91193 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFL210, SiHFL210 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T Rg + - I AS V DD VDS 10 V 0.01 Ω tp IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12a - Unclamped Inductive Test Circuit EAS, Single Pulse Energy (mJ) 120 ID 0.43 A 0.61 A Bottom 0.90 A Top 100 80 60 40 20 0 VDD = 50 V 25 91193_12C 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform S14-1685-Rev. E, 18-Aug-14 Fig. 13b - Gate Charge Test Circuit Document Number: 91193 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFL210, SiHFL210 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91193. S14-1685-Rev. E, 18-Aug-14 Document Number: 91193 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-223 (HIGH VOLTAGE) B D A 3 0.08 (0.003) B1 C 0.10 (0.004) M C B M A 4 3 H E 0.20 (0.008) M C A M L1 1 2 3 4xL 3xB e θ 0.10 (0.004) M C B M e1 4xC MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 0.033 B 0.65 0.85 0.026 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 e 2.30 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 L 0.91 - 0.036 L1 θ 0.061 BSC - 0.146 0.0905 BSC 0.287 0.0024 BSC 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. Document Number: 91363 Revision: 15-Sep-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000