IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • 60 RDS(on) () VGS = 5.0 V Qg max. (nC) 0.20 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single Surface mount Available in tape and reel Dynamic dV/dt rating Logic-level gate drive RDS(on) specified at VGS = 4 V and 5 V Available Fast switching Ease of paralleling Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. SOT-223 D G G D S S Marking code: LA N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free SOT-223 SiHLL014TR-GE3 IRLL014TRPbF a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDS VGS Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C a Pulsed Drain Current Linear Derating Factor Linear Derating Factor (PCB mount) e Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Maximum Power Dissipation (PCB mount) e Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d ID IDM EAS IAR EAR TC = 25 °C TA = 25 °C PD dV/dt TJ, Tstg for 10 s LIMIT 60 ± 10 2.7 1.7 22 0.025 0.017 100 2.7 0.31 3.1 2.0 4.5 -55 to +150 300 UNIT V A W/°C mJ A mJ W V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 2.7 A (see fig. 12). c. ISD 10 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S16-0015-Rev. F, 18-Jan-16 Document Number: 91319 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLL014, SiHLL014 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient (PCB mount) a PARAMETER RthJA - - 60 Maximum Junction-to-Case (Drain) RthJC - - 40 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.073 - V/°C VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 VDS = 48 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = 5.0 V ID = 1.6 A b - - 0.20 VGS = 4.0 V ID = 1.4 A b - - 0.28 gfs VDS = 25 V, ID = 1.6 A 3.2 - - VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 400 - - 170 - - 42 - - - 8.4 μA S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance tr td(off) VGS = 5.0 V ID = 10 A, VDS = 48 V, see fig. 6 and 13 b VDD = 30 V, ID = 10 A, Rg = 12 , RD = 2.8 , see fig. 10 b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact - - 3.5 - - 6.0 - 9.3 - - 110 - - 17 - - 26 - - 4.0 - - 6.0 - - - 2.7 - - 22 pF nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 2.7 A, VGS = 0 V b TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs b - - 1.6 V - 65 130 ns - 0.33 0.65 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S16-0015-Rev. F, 18-Jan-16 Document Number: 91319 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLL014, SiHLL014 www.vishay.com Vishay Siliconix VGS Top 7.5 V 5.0 V 4.0 V 3.5 V 3.0 V 2.75 V Bottom 2.5 V 100 ID, Drain Current (A) 101 10-1 2.25 V 10-2 20 µs Pulse Width TC = 25 °C 100 10-1 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 101 3.0 ID = 10 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 TJ, Junction Temperature (°C) VDS, Drain-to-Source Voltage (V) Fig. 4 - Normalized On-Resistance vs. Temperature 700 V GS Top 7.5 V 5.0 V 4.0 V 101 3.5 V 3.0 V 2.75 V Bottom 2.5 V VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 600 Capacitance (pF) ID, Drain Current (A) Fig. 1 - Typical Output Characteristics, TC = 25 °C 100 2.25 V 10-1 10-2 100 10-1 500 400 Ciss 300 Coss 200 Crss 100 20 µs Pulse Width TC = 150 °C 0 100 101 Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 10 ID, Drain Current (A) 150 °C 100 25 °C 10-2 20 µs Pulse Width VDS = 25 V 2 2.5 3 3.5 4 4.5 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S16-0015-Rev. F, 18-Jan-16 5 VGS, Gate-to-Source Voltage (V) 101 10-3 101 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 10-1 20 40 60 80 100 120 140 160 ID = 10 A 6 VDS = 48 V VDS = 30 V 6 4 2 For test circuit see figure 13 0 0 2 4 6 8 10 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91319 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLL014, SiHLL014 ISD, Reverse Drain Current (A) www.vishay.com Vishay Siliconix VDS TJ = 150 °C VGS 101 RD D.U.T. Rg 10 V TJ = 25 °C 100 + - VDD Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VGS = 0 V 10-1 0.4 0.8 1.2 1.6 2.4 2.0 VDS 90 % VSD, Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage 10 % VGS 103 td(on) 5 td(off) tf Fig. 10b - Switching Time Waveforms 2 ID, Drain Current (A) tr Operation in this area limited by RDS(on) 102 5 2 10 100 µs 5 1 ms 2 1 10 ms TC = 25 °C TJ = 150 °C Single Pulse 5 2 0.1 0.1 2 5 1 2 5 10 2 5 102 2 5 103 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 3.0 ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature S16-0015-Rev. F, 18-Jan-16 Document Number: 91319 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Thermal Response (ZthJC) 102 D = 0.50 10 0.20 0.10 0.05 1 PDM 0.02 0.01 t1 Single Pulse (Thermal Response) 10-1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 10-4 10-3 10-2 0.1 1 102 101 103 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T Rg + - I AS V DD VDS 10 V tp 0.01 Ω IAS Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Avalanche Energy (mJ) Fig. 12a - Unclamped Inductive Test Circuit 250 ID 1.2 A 1.7 A Bottom 2.7 A Top 200 150 100 50 VDD = 25 V 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current S16-0015-Rev. F, 18-Jan-16 Document Number: 91319 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG VGS 0.2 µF 12 V 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive Period P.W. D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91319. S16-0015-Rev. F, 18-Jan-16 Document Number: 91319 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-223 (HIGH VOLTAGE) B D A 3 0.08 (0.003) B1 C 0.10 (0.004) M C B M A 4 3 H E 0.20 (0.008) M C A M L1 1 2 3 4xL 3xB e θ 0.10 (0.004) M C B M e1 4xC MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 0.033 B 0.65 0.85 0.026 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 e 2.30 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 L 0.91 - 0.036 L1 θ 0.061 BSC - 0.146 0.0905 BSC 0.287 0.0024 BSC 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. 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