IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current Single • Low trr and Soft Diode Recovery D • Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS • Switch Mode Power Supply (SMPS) G G D • Uninterruptible Power Supply • High Speed Power Switching S • ZVS and High Frequency Circuit S • PWM Inverters N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFB17N50LPbF SiHFB17N50L-E3 IRFB17N50L SiHFB17N50L Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current Pulsed Drain VGS at 10 V TC = 25 °C TC = 100 °C Currenta ID IDM Linear Derating Factor UNIT V 16 11 A 64 1.8 W/°C mJ Single Pulse Avalanche Energyb EAS 390 Repetitive Avalanche Currenta IAR 16 A Repetitive Avalanche Energya EAR 22 mJ Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 220 W dV/dt 13 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 3.0 mH, Rg = 25 , IAS = 16 A (see fig. 12). c. ISD 16 A, dI/dt 347 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91098 S11-0514-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB17N50L, SiHFB17N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 0.56 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 μA 500 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.6 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 50 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA - 0.28 0.32 11 - - S - 2760 - - 325 - Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 9.9 Ab VGS = 10 V VDS = 50 V, ID = 9.9 Ab Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Effective Output Capacitance Coss Coss eff. Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 37 - VGS = 0 V VDS = 1.0 V , f = 1.0 MHz - 3690 - VGS = 0 V VDS = 400 V , f = 1.0 MHz - 84 - VGS = 0 V VDS = 0 V to 400 Vc - 159 - - - 130 VGS = 10 V ID = 16 A, VDS = 400 V, see fig. 6 and 13b - - 33 Gate-Drain Charge Qgd - - 59 Turn-On Delay Time td(on) - 21 - - 51 - - 50 - - 28 - - - 16 - - 64 Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 250 V, ID = 16 A, Rg = 7.5 , see fig. 10b tf pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time IS ISM VSD trr Qrr MOSFET symbol showing the integral reverse p - n junction diode A G TJ = 25 °C, IS = 16 A, VGS = 0 S Vb TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 16 A, dI/dt = 100 A/μsb TJ = 125 °C IRRM ton D - - 1.5 - 170 250 - 220 330 - 470 710 - 810 1210 - 7.3 11 V ns nC A Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 91098 S11-0514-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB17N50L, SiHFB17N50L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 10 Bottom TJ = 150 °C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) Top VGS 15 V 12 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 1 5.0 V 0.1 10 TJ = 25 °C 1 20 μs PULSE WIDTH TJ = 25 °C 0.01 0.1 0.1 1 4.0 100 10 VDS, Drain-to-Source Voltage (V) RDS(on), Drain-to-Source On Resistance (Normalized) VGS 15 V 12 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom 5.0 V Top 5.0 V 1 20 μs PULSE WIDTH TJ = 125 °C 0.1 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91098 S11-0514-Rev. B, 21-Mar-11 6.0 7.0 8.0 9.0 10.0 Fig. 3 - Typical Transfer Characteristics 100 10 5.0 VGS, Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics ID, Drain-to-Source Current (A) VDS = 50 V 20 μs PULSE WIDTH 100 3.0 ID = 16 A 2.5 2.0 1.5 1.0 0.5 VGS = 10 V 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB17N50L, SiHFB17N50L Vishay Siliconix 100 1 000 000 C, Capacitance (pF) 10 000 f = 1 MHz Shorted TJ = 150 °C ISD, Reverse Drain Current (A) VGS = 0 V, Ciss = Cgs + Cgd, Cds Crss = Cgd Coss = Cds + Cgd Ciss 1000 Coss 100 10 TJ = 25 °C 1 Crss 10 1 10 100 0.1 0.2 1000 1.3 0.9 0.6 1.6 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 20 ID = 16 A OPERATING IN THIS AREA LIMITED BY RDS(on) VDS = 400 V VDS = 250 V VDS = 100 V 16 100 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) VGS = 0 V 12 8 10 μs 10 100 μs 1 ms 1 10 ms 4 TC = 25 °C TJ = 150 °C Single Pulse 0 0 30 120 60 90 QG, Total Gate Charge (nC) 150 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 0.1 10 100 1000 10000 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91098 S11-0514-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB17N50L, SiHFB17N50L Vishay Siliconix RD VDS 20 VGS D.U.T. RG + - VDD ID, Drain Current (A) 16 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 12 Fig. 10a - Switching Time Test Circuit 8 VDS 4 90 % 0 50 25 75 100 125 150 10 % VGS TC, Case Temperature (°C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms 1 Thermal Response (ZthJC) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 t1 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91098 S11-0514-Rev. B, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB17N50L, SiHFB17N50L Vishay Siliconix VDS tp 15 V Driver L VDS D.U.T RG + A - VDD IAS 20 V tp A IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 800 ID 7A 10 A 16 A EAS, Single Pulse Avalanche Energy (mJ) TOP BOTTOM 640 480 320 160 0 25 50 75 100 150 125 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91098 S11-0514-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB17N50L, SiHFB17N50L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91098. Document Number: 91098 S11-0514-Rev. B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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