IRL640, SiHL640 Datasheet

IRL640, SiHL640
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
•
200
RDS(on) ()
VGS = 5.0 V
0.18
Qg max. (nC)
66
Qgs (nC)
9.0
Qgd (nC)
38
Configuration
Single
D
Dynamic dV/dt rating
Repetitive avalanche rated
Available
Logic-level gate drive
Available
RDS(on) specified at VGS = 4 V and 5 V
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
TO-220AB
G
DESCRIPTION
G
D
S
Third generation power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRL640PbF
Lead (Pb)-free
SiHL640-E3
IRL640
SnPb
SiHL640
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
± 10
VGS at 5.0 V
Continuous Drain Current
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
UNIT
V
17
11
A
IDM
68
1.0
W/°C
Single Pulse Avalanche Energy b
EAS
580
mJ
Repetitive Avalanche Current a
IAR
10
A
Repetitive Avalanche Energy a
EAR
13
mJ
PD
125
W
dV/dt
5.0
V/ns
TJ, Tstg
-55 to +150
Linear Derating Factor
Maximum Power Dissipation
Peak Diode Recovery dV/dt
TC = 25 °C
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
Mounting Torque
for 10 s
6-32 or M3 screw
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 3.0 mH, Rg = 25  IAS = 17 A (see fig. 12).
c. ISD  17 A, dI/dt  150 A/ms, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
S16-0763-Rev. C, 02-May-16
Document Number: 91305
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL640, SiHL640
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 μA
200
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.27
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
1.0
-
2.0
V
Gate-Source Leakage
IGSS
VGS = ± 10
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
RDS(on)
VDS = 200 V, VGS = 0 V
-
-
25
VDS = 160 V, VGS = 0 V, TJ = 125 °C
-
-
250
VGS = 5.0 V
ID = 10 A b
-
-
0.18
VGS = 4.0 V
ID = 8.5 A b
-
-
0.27
-
gfs
VDS = 50 V, ID = 10 A b
16
-
Input Capacitance
Ciss
1800
-
Coss
VGS = 0 V,
VDS = 25 V
f = 1.0 MHz, see fig. 5
-
Output Capacitance
-
400
-
-
120
-
-
-
66
Forward Transconductance
μA

S
Dynamic
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
9.0
Gate-Drain Charge
Qgd
-
-
38
Turn-On Delay Time
td(on)
-
8.0
-
tr
-
83
-
-
44
-
-
52
-
-
4.5
-
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VGS = 5.0 V
ID = 17 A, VDS = 160 V,
see fig. 6 and 13 b
VDD = 100 V, ID = 17 A
Rg = 4.6 , RD = 5.7, see fig. 10 b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
-
7.5
-
0.3
-
1.2
-
-
17
-
-
68
S
Gate Input Resistance
Rg
f = 1 MHz, open drain

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current a
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the 
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 17 A, VGS = 0 V b
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b
-
-
2.0
V
-
310
470
ns
-
3.2
4.8
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
S16-0763-Rev. C, 02-May-16
Document Number: 91305
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL640, SiHL640
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-0763-Rev. C, 02-May-16
Document Number: 91305
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL640, SiHL640
www.vishay.com
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
S16-0763-Rev. C, 02-May-16
Document Number: 91305
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL640, SiHL640
www.vishay.com
Vishay Siliconix
RD
VDS
VGS
D.U.T.
Rg
+
- VDD
5V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off)
tr
tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
Rg
D.U.T.
+
-
IAS
V DD
VDS
5V
tp
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
S16-0763-Rev. C, 02-May-16
IAS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91305
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL640, SiHL640
www.vishay.com
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
5V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
S16-0763-Rev. C, 02-May-16
Fig. 13b - Gate Charge Test Circuit
Document Number: 91305
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL640, SiHL640
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
V
- DD
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
Driver gate drive
Period
P.W.
+
D=
P.W.
Period
V GS = 10 V a
D.U.T. ISD waveform
Reverse
recovery
current
D.U.T. VDS
Body diode forward
current
dI/dt
waveform
Diode recovery
dV/dt
Re-applied
voltage
V DD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel










Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91305.
S16-0763-Rev. C, 02-May-16
Document Number: 91305
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000