IRF9530, SiHF9530 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • -100 RDS(on) () VGS = -10 V 0.30 Qg max. (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S TO-220AB Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G G D Dynamic dV/dt rating Available Repetitive avalanche rated P-channel Available 175 °C operating temperature Fast switching Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION S Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. D P-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF9530PbF Lead (Pb)-free SiHF9530-E3 IRF9530 SnPb SiHF9530 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ± 20 VGS at - 10 V Continuous Drain Current TC = 25 °C TC = 100 °C Pulsed Drain Current a ID IDM Linear Derating Factor Single Pulse Avalanche Energy b UNIT V - 12 -8.2 A -48 0.59 W/°C mJ EAS 400 Repetitive Avalanche Current a IAR -12 A Repetitive Avalanche Energy a EAR 8.8 mJ Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d Mounting Torque for 10 s 6-32 or M3 screw PD 88 W dV/dt - 5.5 V/ns TJ, Tstg -55 to +175 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 , IAS = -12 A (see fig. 12). c. ISD -12 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. S16-0754-Rev. C, 02-May-16 Document Number: 91076 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9530, SiHF9530 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = -250 μA -100 - - V VDS/TJ Reference to 25 °C, ID = -1 mA - -0.10 - V/°C VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VDS = -100 V, VGS = 0 V - - -100 VDS = -80 V, VGS = 0 V, TJ = 150 °C - - -500 - - 0.30 3.7 - - S ID = -7.2 A b VGS = -10 V VDS = -50 V, ID = -7.2 Ab μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGS = 0 V, VDS = -25 V, f = 1.0 MHz, see fig. 5 - 860 - - 340 - pF - 93 - - - 38 - - 6.8 - - 21 td(on) - 12 - tr - 52 - - 31 - - 39 - - 4.5 - - 7.5 - 0.4 - 3.3 - - -12 S - - -48 TJ = 25 °C, IS = -12 A, VGS = 0 V b - - -6.3 V - 120 240 ns - 0.46 0.92 μC td(off) VGS = -10 V ID = -12 A, VDS = -80 V, see fig. 6 and 13 b VDD = -50 V, ID = -12 A, Rg = 12 ,RD = 3.9, see fig. 10 b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D nC ns nH G S Gate Input Resistance Rg f = 1 MHz, open drain Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p -n junction diode D A G TJ = 25 °C, IF = -12 A, dI/dt = 100 A/μs b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S16-0754-Rev. C, 02-May-16 Document Number: 91076 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9530, SiHF9530 www.vishay.com Vishay Siliconix VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V - ID, Drain Current (A) Top 101 - 4.5 V 20 µs Pulse Width TC = 25 °C 100 10-1 100 101 - VDS, Drain-to-Source Voltage (V) 91076_01 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Bottom 2.0 1.5 1.0 0.5 0.0 - 60- 40 - 20 0 TJ, Junction Temperature (°C) 100 1200 Ciss 900 600 Coss 300 Crss 0 101 100 - VDS, Drain-to-Source Voltage (V) Fig. 5 -Typical Capacitance vs. Drain-to-Source Voltage - ID, Drain Current (A) 175 °C 20 µs Pulse Width VDS = - 50 V 100 ID = - 12 A 16 VDS = - 80 V VDS = - 50 V 12 VDS = - 20 V 8 4 For test circuit see figure 13 0 4 91076_03 - VGS, Gate-to-Source Voltage (V) 20 25 °C 101 - VDS, Drain-to-Source Voltage (V) 91076_05 Fig. 2 - Typical Output Characteristics, TC = 175 °C 101 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 1500 20 µs Pulse Width TC = 175 °C 100 10-1 20 40 60 80 100 120 140 160 180 1800 VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V - 4.5 V - 4.5 V 91076_02 2.5 Fig. 4 -Normalized On-Resistance vs. Temperature Capacitance (pF) - ID, Drain Current (A) 101 ID = - 12 A VGS = - 10 V 91076_04 Fig. 1 -Typical Output Characteristics, TC = 25 °C Top 3.0 5 6 7 8 9 10 - VGS, Gate-to-Source Voltage (V) Fig. 3 -Typical Transfer Characteristics S16-0754-Rev. C, 02-May-16 0 91076_06 10 20 30 40 50 QG, Total Gate Charge (nC) Fig. 6 -Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91076 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9530, SiHF9530 www.vishay.com Vishay Siliconix - ISD, Reverse Drain Current (A) 12 - ID, Drain Current (A) 10 175 °C 101 25 °C 100 8 6 4 2 VGS = 0 V 10-1 0 1.0 2.0 3.0 5.0 4.0 - VSD, Source-to-Drain Voltage (V) 91076_07 75 100 125 150 175 TC, Case Temperature (°C) 91076_09 Fig. 7 -Typical Source-Drain Diode Forward Voltage Fig. 9 -Maximum Drain Current vs. Case Temperature RD 103 VDS Operation in this area limited by RDS(on) 5 2 - ID, Drain Current (A) 50 25 VGS 102 D.U.T. RG 5 10 µs 2 100 µs + - VDD - 10 V 10 1 ms 5 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 10 ms 2 1 Fig. 10a - Switching Time Test Circuit 5 TC = 25 °C TJ = 175 °C Single Pulse 2 0.1 0.1 2 5 1 2 5 10 2 td(on) 5 2 102 5 td(off) tf tr VGS 103 10 % - VDS, Drain-to-Source Voltage (V) 91076_08 Fig. 8 -Maximum Safe Operating Area 90 % VDS Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 0.2 PDM 0.1 0.1 0.05 t1 Single Pulse (Thermal Response) 0.02 0.01 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 91076_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0754-Rev. C, 02-May-16 Document Number: 91076 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9530, SiHF9530 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS IAS VDS VDS D.U.T RG + V DD VDD IAS tp - 10 V A 0.01 Ω tp VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1200 ID - 4.9 A - 8.5 A Bottom - 12 A Top 1000 800 600 400 200 0 VDD = - 25 V 25 91076_12c 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform S16-0754-Rev. C, 02-May-16 Fig. 13b - Gate Charge Test Circuit Document Number: 91076 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9530, SiHF9530 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg + • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 -For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91076. S16-0754-Rev. C, 02-May-16 Document Number: 91076 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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