IRF9530, SiHF9530 Datasheet

IRF9530, SiHF9530
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
•
-100
RDS(on) ()
VGS = -10 V
0.30
Qg max. (nC)
38
Qgs (nC)
6.8
Qgd (nC)
21
Configuration
Single
S
TO-220AB
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
G
D
Dynamic dV/dt rating
Available
Repetitive avalanche rated
P-channel
Available
175 °C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
S
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness. 
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF9530PbF
Lead (Pb)-free
SiHF9530-E3
IRF9530
SnPb
SiHF9530
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-100
Gate-Source Voltage
VGS
± 20
VGS at - 10 V
Continuous Drain Current
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energy
b
UNIT
V
- 12
-8.2
A
-48
0.59
W/°C
mJ
EAS
400
Repetitive Avalanche Current a
IAR
-12
A
Repetitive Avalanche Energy a
EAR
8.8
mJ
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
Mounting Torque
for 10 s
6-32 or M3 screw
PD
88
W
dV/dt
- 5.5
V/ns
TJ, Tstg
-55 to +175
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = -25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 , IAS = -12 A (see fig. 12).
c. ISD  -12 A, dI/dt  140 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
S16-0754-Rev. C, 02-May-16
Document Number: 91076
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9530, SiHF9530
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = -250 μA
-100
-
-
V
VDS/TJ
Reference to 25 °C, ID = -1 mA
-
-0.10
-
V/°C
VGS(th)
VDS = VGS, ID = -250 μA
-2.0
-
-4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
VDS = -100 V, VGS = 0 V
-
-
-100
VDS = -80 V, VGS = 0 V, TJ = 150 °C
-
-
-500
-
-
0.30

3.7
-
-
S
ID = -7.2 A b
VGS = -10 V
VDS = -50 V, ID = -7.2
Ab
μA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
-
860
-
-
340
-
pF
-
93
-
-
-
38
-
-
6.8
-
-
21
td(on)
-
12
-
tr
-
52
-
-
31
-
-
39
-
-
4.5
-
-
7.5
-
0.4
-
3.3
-
-
-12
S
-
-
-48
TJ = 25 °C, IS = -12 A, VGS = 0 V b
-
-
-6.3
V
-
120
240
ns
-
0.46
0.92
μC
td(off)
VGS = -10 V
ID = -12 A, VDS = -80 V,
see fig. 6 and 13 b
VDD = -50 V, ID = -12 A,
Rg = 12 ,RD = 3.9, see fig. 10 b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
nC
ns
nH
G
S
Gate Input Resistance
Rg
f = 1 MHz, open drain

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current a
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the 
integral reverse
p -n junction diode
D
A
G
TJ = 25 °C, IF = -12 A, dI/dt = 100 A/μs b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
S16-0754-Rev. C, 02-May-16
Document Number: 91076
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9530, SiHF9530
www.vishay.com
Vishay Siliconix
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- ID, Drain Current (A)
Top
101
- 4.5 V
20 µs Pulse Width
TC = 25 °C
100
10-1
100
101
- VDS, Drain-to-Source Voltage (V)
91076_01
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Bottom
2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0
TJ, Junction Temperature (°C)
100
1200
Ciss
900
600
Coss
300
Crss
0
101
100
- VDS, Drain-to-Source Voltage (V)
Fig. 5 -Typical Capacitance vs. Drain-to-Source Voltage
- ID, Drain Current (A)
175 °C
20 µs Pulse Width
VDS = - 50 V
100
ID = - 12 A
16
VDS = - 80 V
VDS = - 50 V
12
VDS = - 20 V
8
4
For test circuit
see figure 13
0
4
91076_03
- VGS, Gate-to-Source Voltage (V)
20
25 °C
101
- VDS, Drain-to-Source Voltage (V)
91076_05
Fig. 2 - Typical Output Characteristics, TC = 175 °C
101
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
1500
20 µs Pulse Width
TC = 175 °C
100
10-1
20 40 60 80 100 120 140 160 180
1800
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 4.5 V
91076_02
2.5
Fig. 4 -Normalized On-Resistance vs. Temperature
Capacitance (pF)
- ID, Drain Current (A)
101
ID = - 12 A
VGS = - 10 V
91076_04
Fig. 1 -Typical Output Characteristics, TC = 25 °C
Top
3.0
5
6
7
8
9
10
- VGS, Gate-to-Source Voltage (V)
Fig. 3 -Typical Transfer Characteristics
S16-0754-Rev. C, 02-May-16
0
91076_06
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig. 6 -Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91076
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9530, SiHF9530
www.vishay.com
Vishay Siliconix
- ISD, Reverse Drain Current (A)
12
- ID, Drain Current (A)
10
175 °C
101
25 °C
100
8
6
4
2
VGS = 0 V
10-1
0
1.0
2.0
3.0
5.0
4.0
- VSD, Source-to-Drain Voltage (V)
91076_07
75
100
125
150
175
TC, Case Temperature (°C)
91076_09
Fig. 7 -Typical Source-Drain Diode Forward Voltage
Fig. 9 -Maximum Drain Current vs. Case Temperature
RD
103
VDS
Operation in this area limited
by RDS(on)
5
2
- ID, Drain Current (A)
50
25
VGS
102
D.U.T.
RG
5
10 µs
2
100 µs
+
- VDD
- 10 V
10
1 ms
5
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10 ms
2
1
Fig. 10a - Switching Time Test Circuit
5
TC = 25 °C
TJ = 175 °C
Single Pulse
2
0.1
0.1
2
5
1
2
5
10
2
td(on)
5
2
102
5
td(off) tf
tr
VGS
103
10 %
- VDS, Drain-to-Source Voltage (V)
91076_08
Fig. 8 -Maximum Safe Operating Area
90 %
VDS
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
D = 0.5
0.2
PDM
0.1
0.1
0.05
t1
Single Pulse
(Thermal Response)
0.02
0.01
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
91076_11
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0754-Rev. C, 02-May-16
Document Number: 91076
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9530, SiHF9530
www.vishay.com
Vishay Siliconix
L
Vary tp to obtain
required IAS
IAS
VDS
VDS
D.U.T
RG
+ V DD
VDD
IAS
tp
- 10 V
A
0.01 Ω
tp
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
1200
ID
- 4.9 A
- 8.5 A
Bottom - 12 A
Top
1000
800
600
400
200
0
VDD = - 25 V
25
91076_12c
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
S16-0754-Rev. C, 02-May-16
Fig. 13b - Gate Charge Test Circuit
Document Number: 91076
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9530, SiHF9530
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
+
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 -For P-Channel









Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91076.
S16-0754-Rev. C, 02-May-16
Document Number: 91076
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000