IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • -60 RDS(on) () VGS = -10 V 0.14 Qg max. (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S Dynamic dV/dt rating Repetitive avalanche rated Available P-channel Available 175 °C operating temperature Fast switching Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. TO-220AB G DESCRIPTION G D S Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. D P-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF9Z34PbF Lead (Pb)-free SiHF9Z34-E3 IRF9Z34 SnPb SiHF9Z34 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 VGS at -10 V Continuous Drain Current TC = 25 °C ID TC = 100 °C Pulsed Drain Current a IDM Linear Derating Factor UNIT V -18 -13 A -72 0.59 W/°C Single Pulse Avalanche Energy b EAS 370 mJ Repetitive Avalanche Current a IAR -18 A EAR 8.8 mJ PD 88 W dV/dt -4.5 V/ns TJ, Tstg -55 to +175 Repetitive Avalanche Energy a Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d Mounting Torque for 10 s 6-32 or M3 screw 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -25 V, starting TJ = 25 °C, L = 1.3 mH, Rg = 25 , IAS = -18 A (see fig. 12). c. ISD -18 A, dI/dt 170 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. S16-0754-Rev. C, 02-May-16 Document Number: 91092 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -60 - - V VDS/TJ Reference to 25 °C, ID = -1 mA - -0.060 - V/°C VGS(th) VDS = VGS, ID = 250 μA -2.0 - -4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA - -100 IDSS VDS = -60 V, VGS = 0 V - Zero Gate Voltage Drain Current VDS = -48 V, VGS = 0 V, TJ = 150 °C - - -500 - - 0.14 - S Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Drain-Source On-State Resistance RDS(on) μA ID = -11 A b VGS = -10 V gfs VDS = -25 V, ID = -11 A b 5.9 - Input Capacitance Ciss 1100 - Coss - 620 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = -25 V, f = 1.0 MHz, see fig. 5 - Output Capacitance - 100 - Total Gate Charge Qg - - 34 - - 9.9 - 16 Forward Transconductance Dynamic VGS = -10 V ID = -1 8 A, VDS = -48 V, see fig. 6 and 13 b Gate-Source Charge Qgs Gate-Drain Charge Qgd - Turn-On Delay Time td(on) - 18 - tr - 120 - - 20 - - 58 - - 4.5 - Rise Time Turn-Off Delay Time td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS Gate Input Resistance Rg VDD = -30 V, ID = -18 A, Rg = 12 , RD = 1.5, see fig. 10 b Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G - 7.5 - 0.7 - 3.9 - - -18 S - - -72 TJ = 25 °C, IS = -18 A, VGS = 0 V b - - -6.3 V - 100 200 ns - 0.28 0.52 μC S f = 1 MHz, open drain Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p -n junction diode D A G TJ = 25 °C, IF = -18 A, dI/dt = 100 A/μs b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S16-0754-Rev. C, 02-May-16 Document Number: 91092 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V - ID, Drain Current (A) Top 101 - 4.5 V 100 20 µs Pulse Width TC = 25 °C 10-1 100 101 - VDS, Drain-to-Source Voltage (V) 91092_01 Fig. 1 - Typical Output Characteristics, TC = 25 °C - ID, Drain Current (A) 102 ID = - 18 A VGS = - 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature 2000 VGS Top - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V 101 2.5 91092_04 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 1600 - 4.5 V Capacitance (pF) 102 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1200 Ciss 800 Coss 400 100 Crss 20 µs Pulse Width TC = 175 °C 100 10-1 100 - VDS, Drain-to-Source Voltage (V) 91092_02 0 101 - VDS, Drain-to-Source Voltage (V) 91092_05 Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 175 °C 101 20 µs Pulse Width VDS = - 25 V 100 - VGS, Gate-to-Source Voltage (V) - ID, Drain Current (A) 20 25 °C 101 ID = - 18 A VDS = - 48 V 16 VDS = - 30 V 12 8 4 For test circuit see figure 13 0 4 91092_03 5 6 7 8 9 - VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S16-0754-Rev. C, 02-May-16 10 0 91092_06 5 10 15 20 25 30 35 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91092 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix 101 - ID, Drain Current (A) - ISD, Reverse Drain Current (A) 20 175 °C 25 °C 100 VGS = 0 V 0.0 1.0 2.0 4.0 3.0 4 50 75 100 125 150 175 TC, Case Temperature (°C) 91092_09 Fig. 9 - Maximum Drain Current vs. Case Temperature RD 103 VDS Operation in this area limited by RDS(on) 5 - ID, Drain Current (A) 8 25 Fig. 7 - Typical Source-Drain Diode Forward Voltage VGS 2 D.U.T. RG 102 +VDD 10 µs 5 100 µs - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 2 1 ms 10 Fig. 10a - Switching Time Test Circuit 5 10 ms TC = 25 °C TJ = 175 °C Single Pulse 2 1 0.1 12 0 5.0 - VSD, Source-to-Drain Voltage (V) 91092_07 16 2 5 1 2 5 10 2 td(on) 5 102 2 5 td(off) tf tr VGS 103 10 % - VDS, Drain-to-Source Voltage (V) 91092_08 Fig. 8 - Maximum Safe Operating Area 90 % VDS Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 0.2 PDM 0.1 0.1 0.05 t1 Single Pulse (Thermal Response) 0.02 0.01 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 91092_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0754-Rev. C, 02-May-16 Document Number: 91092 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS IAS VDS VDS D.U.T RG + V DD VDD IAS tp - 10 V 0.01 Ω tp VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1200 ID - 7.3 A - 13 A Bottom - 18 A Top 1000 800 600 400 200 0 VDD = - 25 V 25 91092_12c 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform S16-0754-Rev. C, 02-May-16 Fig. 13b - Gate Charge Test Circuit Document Number: 91092 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91092. S16-0754-Rev. C, 02-May-16 Document Number: 91092 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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