® T E PRODUC OBSOLET CEMENT A L P ED RE D N t E M M O rt Center a NO REC ical Suppo il.com/tsc n h c e T r u w.inters contact o RSIL or ww 1-888-INTE September 2004 HA-2500/883 Precision High Slew Rate Operational Amplifier Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HA-2500/883 is a monolithic operational amplifier which is optimized to deliver excellent slew rate, bandwidth, and settling time specifications. The outstanding dynamic features of this internally compensated device are complemented with low offset voltage and offset current. • High Slew Rate . . . . . . . . . . . . . . . . . . . . . . .25V/µs (Min) 30V/µs (Typ) This dielectrically isolated amplifier is ideally suited for applications such as data acquisition, RF, video, and pulse conditioning circuits. Guaranteed slew rates of ±25V/µs minimum make it an excellent component in fast, accurate data acquisition and pulse amplification designs. To insure compliance, all devices are 100% tested for AC performance characteristics over the full temperature limits. • Wide Power Bandwidth . . . . . . . . . . . . . . . 350kHz (Min) • High Input Impedance . . . . . . . . . . . . . . . . . 25MΩ (Min) 50MΩ (Typ) • Low Offset Current . . . . . . . . . . . . . . . . . . . 25nA (Max) 10nA (Typ) • Low Quiescent Current . . . . . . . . . . . . . . . . . 6mA (Max) A typical 12MHz gain bandwidth product and 500kHz full power bandwidth make this device well suited to RF and video applications. With guaranteed offset voltages of 5mV plus external offset adjust flexibility and low offset current, this amplifier is particularly useful in signal conditioning designs. • Fast Settling Time (0.1% of 10V Step) . . . . 330ns (Typ) • High Gain Bandwidth Product . . . . . . . . . 12MHz (Typ) • Internally Compensated For Unity Gain Stability Applications Part Number Information • Data Acquisition Systems PART NUMBER • RF Amplifiers • Video Amplifiers HA2-2500/883 TEMP. RANGE (oC) -55 to 125 PACKAGE 8 Pin Can PKG. NO. T8.C • Signal Generators • Pulse Amplification Pinout HA-2500/883 (METAL CAN) TOP VIEW COMP 8 BAL 1 + 2 -IN +IN V+ 7 6 OUT 5 3 BAL 4 V- CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002, 2004. All Rights Reserved 1 Spec Number 511002-883 FN3734.3 HA-2500/883 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . 40V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Thermal Resistance (Typical, Note 1) θJA θJC Metal Can Package . . . . . . . . . . . . . . . . . 160oC/W 75oC/W Package Power Dissipation Limit at 75oC for TJ ≤ 175oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Package Power Dissipation Derating Factor Above 75oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3mW/oC Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . 175oC Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300oC Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V VINCM ≤ 1/2 (V+ - V-) RL ≥ 2kΩ CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω , RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified. PARAMETER Input Offset Voltage Input Bias Current SYMBOL VIO +IB -IB Input Offset Current Common Mode Range IIO +CMR -CMR Large Signal Voltage Gain +AVOL -AVOL Common Mode Rejection Ratio +CMRR -CMRR CONDITIONS VCM = 0V VCM = 0V, +RS = 100kΩ, -RS = 100Ω VCM = 0V, +RS = 100Ω, -RS = 100kΩ VCM = 0V,+RS = 100kΩ, -RS = 100kΩ V+ = 5V, V- = -25V V+ = 25V, V- = -5V VOUT = 0V and +10V, RL = 2kΩ VOUT = 0V and -10V, RL = 2kΩ ∆VCM = +10V, V+ = +5V, V- = -25V, VOUT = -10V ∆VCM = -10V, V+ = +25V, V- = -5V, VOUT = +10V GROUP A SUBGROUPS TEMP (oC) MIN MAX UNITS 1 25 -5 5 mV 2, 3 125, -55 -8 8 mV 1 25 -200 200 nA 2, 3 125, -55 -400 400 nA 1 25 -200 200 nA 2, 3 125, -55 -400 400 nA 1 25 -25 25 nA 2, 3 125, -55 -50 50 nA 1 25 +10 - V 2, 3 125, -55 +10 - V 1 25 - -10 V 2, 3 125, -55 - -10 V 4 25 20 - kV/V 5, 6 125, -55 15 - kV/V 4 25 20 - kV/V 5, 6 125, -55 15 - kV/V 1 25 80 - dB 2, 3 125, -55 80 - dB 1 25 80 - dB 2, 3 125, -55 80 - dB Spec Number 2 511002-883 HA-2500/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω , RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified. PARAMETER Output Voltage Swing SYMBOL +VOUT -VOUT Output Current +IOUT -IOUT Quiescent Power Supply Current +ICC -ICC Power Supply Rejection Ratio +PSRR -PSRR Offset Voltage Adjustment +VIOAdj -VIOAdj CONDITIONS GROUP A SUBGROUPS TEMP (oC) MIN MAX UNITS 4 25 10 - V 5, 6 125, -55 10 - V 4 25 - -10 V 5, 6 125, -55 - -10 V 4 25 10 - mA 5, 6 125, -55 7.5 - mA 4 25 - -10 mA 5, 6 125, -55 - -7.5 mA 1 25 - 6 mA 2, 3 125, -55 - 6.5 mA 1 25 -6 - mA 2, 3 125, -55 -6.5 - mA 1 25 80 - dB 2, 3 125, -55 80 - dB 1 25 80 - dB 2, 3 125, -55 80 - dB 1 25 VIO-1 - mV 2, 3 125, -55 VIO-1 - mV 1 25 VIO+1 - mV 2, 3 125, -55 VIO+1 - mV RL = 2kΩ RL = 2kΩ VOUT = -10V VOUT = +10V VOUT = 0V, IOUT = 0mA VOUT = 0V, IOUT = 0mA ∆VSUP = 10V, V+ = +20V, V- = -15V, V+ = +10V, V- = -15V ∆VSUP = 10V, V+ = +15V, V- = -20V, V+ = +15V, V- = -10V Note 2 Note 2 NOTE: 2. Offset adjustment range is [VIO (Measured) ±1mV] minimum referred to output. This test is for functionality only to assure adjustment through 0V. TABLE 2. ECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified. PARAMETER Slew Rate SYMBOL CONDITIONS GROUP A SUBGROUPS TEMP (oC) MIN MAX UNITS +SR VOUT = -5V to +5V, 25% ≤ +SR ≤ 75% 7 25 25 - V/µs 8A, 8B 125, -55 20 - V/µs 7 25 25 - V/µs 8A, 8B 125, -55 20 - V/µs -SR VOUT = +5V to -5V, 75% ≥ -SR ≥ 25% Spec Number 3 511002-883 HA-2500/883 TABLE 2. ECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified. PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUPS TEMP (oC) MIN MAX UNITS tr VOUT = 0 to +200mV, 10% ≤ tr ≤ 90% 7 25 - 50 ns 8A, 8B 125, -55 - 60 ns 7 25 - 50 ns 8A, 8B 125, -55 - 60 ns 7 25 - 40 % 8A, 8B 125, -55 - 50 % 7 25 - 40 % 8A, 8B 125, -55 - 50 % Rise and Fall Time tf Overshoot +OS -OS VOUT = 0 to -200mV, 10% ≤ tf ≤ 90% VOUT = 0 to +200mV VOUT = 0 to -200mV TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, Unless Otherwise Specified. PARAMETER Differential Input Resistance SYMBOL RIN CONDITIONS VCM = 0V Full Power Bandwidth FPBW VPEAK = 10V Minimum Closed Loop Stable Gain CLSG RL = 2kΩ, CL = 50pF Quiescent Power Consumption PC VOUT = 0V, IOUT = 0mA NOTES TEMP (oC) MIN MAX UNITS 3 25 25 - MΩ 3, 4 25 350 - kHz 3 -55 to 125 1 - V/V 3, 5 -55 to 125 - 195 mW NOTES: 3. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 4. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK). 5. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.) TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 6), 2, 3, 4, 5, 6, 7, 8A, 8B Group A Test Requirements 1, 2, 3, 4, 5, 6, 7, 8A, 8B Groups C and D Endpoints 1 NOTE: 6. PDA applies to Subgroup 1 only. Spec Number 4 511002-883 HA-2500/883 Die Characteristics WORST CASE CURRENT DENSITY: DIE DIMENSIONS: 0.3 x 105A/cm2 57 x 65 x 19 milss 1450 x 1650 x 483µm SUBSTRATE POTENTIAL (Powered Up): METALLIZATION: Unbiased Type: Al, 1% Cu Thickness: 16kÅ ± 2kÅ TRANSISTOR COUNT: HA-2500/883: 40 GLASSIVATION: PROCESS: Bipolar Dielectric Isolation Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kÅ ± 2kÅ Nitride Thickness: 3.5kÅ ± 1.5kÅ Metallization Mask Layout HA-2500/883 +IN BAL -IN COMP V- V+ BAL OUT Spec Number 5 511002-883 HA-2500/883 Burn-In Circuits HA2-2500/883 METAL CAN V+ C3 C1 D1 8 1 7 + 2 6 5 3 4 R1 V- C2 D2 NOTES: R1 = 1MΩ, ±5%, 1/4W (Min) C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min) C3 = 0.01µF/Socket (10%) D1 = D2 = 1N4002 or Equivalent/Board |(V+) - (V-)| = 30V Spec Number 6 511002-883 HA-2500/883 Metal Can Packages (Can) T8.C MIL-STD-1835 MACY1-X8 (A1) REFERENCE PLANE A 8 LEAD METAL CAN PACKAGE e1 L L2 L1 INCHES ØD2 A A k1 Øe ØD ØD1 2 N 1 β Øb1 Øb F α k C L BASE AND SEATING PLANE Q BASE METAL Øb1 LEAD FINISH Øb2 SECTION A-A NOTES: 1. (All leads) Øb applies between L1 and L2. Øb1 applies between L2 and 0.500 from the reference plane. Diameter is uncontrolled in L1 and beyond 0.500 from the reference plane. MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.165 0.185 4.19 4.70 - Øb 0.016 0.019 0.41 0.48 1 Øb1 0.016 0.021 0.41 0.53 1 Øb2 0.016 0.024 0.41 0.61 - ØD 0.335 0.375 8.51 9.40 - ØD1 0.305 0.335 7.75 8.51 - ØD2 0.110 0.160 2.79 4.06 - e 0.200 BSC 5.08 BSC - e1 0.100 BSC 2.54 BSC - F - 0.040 - 1.02 - k 0.027 0.034 0.69 0.86 - k1 0.027 0.045 0.69 1.14 2 L 0.500 0.750 12.70 19.05 1 L1 - 0.050 - 1.27 1 L2 0.250 - 6.35 - 1 Q 0.010 0.045 0.25 1.14 - α 45o BSC 45o BSC 3 β 45o BSC 45o BSC 3 N 8 8 4 2. Measured from maximum diameter of the product. Rev. 0 5/18/94 3. α is the basic spacing from the centerline of the tab to terminal 1 and β is the basic spacing of each lead or lead position (N -1 places) from α, looking at the bottom of the package. 4. N is the maximum number of terminal positions. 5. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 6. Controlling dimension: INCH. All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com Spec Number 7 511002-883