SK45GH063 $ 3 10 4! Absolute Maximum Ratings Symbol Conditions IGBT 5-" $6 3 10 4 & $6 3 910 4 &=> .88 5 :0 ; $ 3 <8 4 /8 ; 988 ; ? 18 5 $6 3 910 4 98 C $ 3 10 4 0E ; $ 3 <8 4 /< ; 988 ; ::8 ; &=>3 1 & 5 3 /88 5@ 5'- A 18 5@ 5-" B .88 5 Units $ 3 10 4 5'-" SEMITOP® 3 Values Inverse Diode IGBT Module SK45GH063 &D $6 3 908 4 &D=> &D=>3 1 &D &D"> 3 98 @ 2 $6 3 908 4 Module &=>" Preliminary Data ; $26 $ Features ! " #$% &'$ ( ) *) +! , -./0/1 Typical Applications* " &2 " *#" 5 ;! 9 , 5'- 3 5-! & 3 9 ; &-" 5'- 3 8 5! 5- 3 5-" 4 %:8 ,,, F910 4 1088 5 $ 3 10 4! Characteristics Symbol Conditions IGBT 5'- %:8 ,,, F908 min. typ. :!0 0!0 $6 3 10 4 max. .!0 5 8!90 ; $6 3 910 4 &'-" 5- 3 8 5! 5'- 3 /8 5 ; $6 3 10 4 918 $6 3 910 4 5-8 - 5'- 3 90 5 & 3 08 ;! 5'- 3 90 5 ; 9 5 $6 3 910 4 9!9 5 $6 3 104 18 G $6 3 104 2, G 1!9 1!0 $6 3 9104 2, 5- 3 10! 5'- 3 8 5 - 5'-3 8 ,,, 18 5 =' 3 11 G =' 3 11 G - =6% &'$ 5 3 /885 &3 /8; $6 3 910 4 5'-3?905 5 5 1!1 D D 8!1 D 900 :0 /0 9!: 108 10 I 9!1 I 3 9 >+ H' ; $6 3 10 4 $6 3 9104 5- Units 9 JKL GH 1 13-02-2007 DIL © by SEMIKRON SK45GH063 Characteristics Symbol Conditions Inverse Diode 5D 3 5- SEMITOP® 3 IGBT Module &D 3 /8 ;@ 5'- 3 8 5 min. $6 3 10 4 2, typ. max. Units 9!/ 9!0 5 $6 3 910 4 2, 9!1 9!:0 5 5D8 $6 3 910 4 8!<0 8!M 5 D $6 3 910 4 < 9. G $6 3 910 4 /8 / ; C 8!M I &==> H &D 3 /8 ; K 3 %088 ;KC - 53 /885 =6% > N >9 1!10 /8 9!1 JKL 1!0 SK45GH063 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Preliminary Data Features * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. ! " #$% &'$ ( ) *) +! , -./0/1 Typical Applications* " &2 " *#" GH 2 13-02-2007 DIL © by SEMIKRON SK45GH063 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 13-02-2007 DIL © by SEMIKRON SK45GH063 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 13-02-2007 DIL © by SEMIKRON SK45GH063 UL recognized file no. E 63 532 $9M " ! #! O 1 $ 9M 5 ' 13-02-2007 DIL © by SEMIKRON